using Hall-effect devices

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G11C11/18

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/18using Hall-effect devices

Industries

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive effect element
- Patent number 12,096,699
- Issue date Sep 17, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin torque device having a spin current polarized at a canting ang...
- Patent number 12,075,708
- Issue date Aug 27, 2024
- National University of Singapore
- Kaiming Cai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic logic device, circuit having magnetic logic devices, and m...
- Patent number 12,068,746
- Issue date Aug 20, 2024
- Nanyang Technological University
- Chu Keong Gerard Joseph Lim
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 12,048,251
- Issue date Jul 23, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Cryogenic magnetic device more particularly for logic component or...
- Patent number 12,046,268
- Issue date Jul 23, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Bernard Dieny
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor circuits and devices based on low-energy consumption...
- Patent number 11,996,129
- Issue date May 28, 2024
- Cornell University
- Darrell Schlom
- G11 - INFORMATION STORAGE
Information Patent Grant
Weak field stimulated skyrmion nucleation and manipulation for spin...
- Patent number 11,990,170
- Issue date May 21, 2024
- OHIO STATE INNOVATION FOUNDATION
- Binbin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Function switchable magnetic random access memory and method for ma...
- Patent number 11,972,786
- Issue date Apr 30, 2024
- Institute of Semiconductors, Chinese Academy of Sciences
- Kaiyou Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 11,968,844
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Min Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic recording array
- Patent number 11,948,615
- Issue date Apr 2, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage control of SOT-MRAM for deterministic writing
- Patent number 11,930,720
- Issue date Mar 12, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic heterojunction structure and method for controlling and ac...
- Patent number 11,922,986
- Issue date Mar 5, 2024
- SHAN DONG UNIVERSITY
- Shishen Yan
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit-torque magnetoresistive random-access memory with integr...
- Patent number 11,915,734
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Grant
Integration scheme for three terminal spin-orbit-torque (SOT) switc...
- Patent number 11,895,928
- Issue date Feb 6, 2024
- Headway Technologies, Inc.
- Jesmin Haq
- G11 - INFORMATION STORAGE
Information Patent Grant
Neuromorphic device and method of driving same
- Patent number 11,881,259
- Issue date Jan 23, 2024
- Korea Institute of Science and Technology
- Seung Heon Baek
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cro...
- Patent number 11,869,561
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque type magnetoresistance effect element, and method...
- Patent number 11,793,088
- Issue date Oct 17, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque magnetization rotational element, spin-orbit torq...
- Patent number 11,756,600
- Issue date Sep 12, 2023
- TDK Corporation
- Yohei Shiokawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Electric field switchable magnetic devices
- Patent number 11,735,242
- Issue date Aug 22, 2023
- Regents of The University of Minnesota
- Jian-Ping Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 11,730,064
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Sung Chul Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device with gate electrode
- Patent number 11,730,065
- Issue date Aug 15, 2023
- Korea Advanced Institute of Science and Technology
- Byong Guk Park
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for cryogenic hybrid technology computing and memory
- Patent number 11,717,475
- Issue date Aug 8, 2023
- SeeQC, Inc.
- Oleg A. Mukhanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device, operation method of memory device and operation meth...
- Patent number 11,721,376
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Valley spin hall effect based non-volatile memory
- Patent number 11,688,445
- Issue date Jun 27, 2023
- Purdue Research Foundation
- Sandeep Krishna Thirumala
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin current magnetization rotational element
- Patent number 11,637,237
- Issue date Apr 25, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and magnetic memory
- Patent number 11,631,804
- Issue date Apr 18, 2023
- Tohoku University
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching of perpendicularly magnetized nanomagnets with spin-orbit...
- Patent number 11,626,229
- Issue date Apr 11, 2023
- University of Rochester
- Mohammad Kazemi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory
- Patent number 11,610,617
- Issue date Mar 21, 2023
- Kioxia Corporation
- Naoharu Shimomura
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element, magnetic memory device, and writing and r...
- Patent number 11,610,614
- Issue date Mar 21, 2023
- TOHOKU UNIVERSITY
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin current magnetization rotational element
- Patent number 11,611,037
- Issue date Mar 21, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR SWITCHING MAGNETIC MOMENTS IN MAGNETIC MATERIAL USING SE...
- Publication number 20240371424
- Publication date Nov 7, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Stuart S.P. PARKIN
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...
- Publication number 20240365684
- Publication date Oct 31, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
IMPLEMENTING COMPUTING FUNCTIONS USING SKYRMIONS
- Publication number 20240258006
- Publication date Aug 1, 2024
- Brown University
- Gang Xiao
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF WRITING AND FORMING MEMORY DEVICE
- Publication number 20240215262
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Min Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT
- Publication number 20240194235
- Publication date Jun 13, 2024
- THE UNIVERSITY OF TOKYO
- Satoru Nakatsuji
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR DETECTING NETWORK OUTAGES
- Publication number 20240161802
- Publication date May 16, 2024
- T-Mobile USA, Inc.
- Shon Lonkar
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20240130247
- Publication date Apr 18, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G01 - MEASURING TESTING
Information Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
- Publication number 20240047115
- Publication date Feb 8, 2024
- University of Rochester
- Mohammad Kazemi
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...
- Publication number 20240008370
- Publication date Jan 4, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY USING SPIN CURRENT, OPERATING METHOD THEREOF, AND E...
- Publication number 20230352072
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20230292630
- Publication date Sep 14, 2023
- Samsung Electronics Co., Ltd.
- Siyeon Cho
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETOELECTRIC SPIN-ORBIT DEVICE WITH IN-PLANE AND PERPENDICULAR M...
- Publication number 20230284538
- Publication date Sep 7, 2023
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20230210017
- Publication date Jun 29, 2023
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR CIRCUITS AND DEVICES BASED ON LOW-ENERGY CONSUMPTION...
- Publication number 20230186961
- Publication date Jun 15, 2023
- Cornell University
- Darrell Schlom
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY
- Publication number 20230189663
- Publication date Jun 15, 2023
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC HETEROJUNCTION STRUCTURE AND METHOD FOR CONTROLLING AND AC...
- Publication number 20230148297
- Publication date May 11, 2023
- SHAN DONG UNIVERSITY
- Shishen Yan
- G11 - INFORMATION STORAGE
Information Patent Application
NEUROMORPHIC DEVICE AND METHOD OF DRIVING SAME
- Publication number 20230139942
- Publication date May 4, 2023
- Korea Institute of Science and Technology
- Seung Heon Baek
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN ORBIT-TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) WITH CRO...
- Publication number 20230086181
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20230071950
- Publication date Mar 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Min Lee
- G11 - INFORMATION STORAGE
Information Patent Application
DIFFERENTIALLY PROGRAMMABLE MAGNETIC TUNNEL JUNCTION DEVICE AND SYS...
- Publication number 20230065198
- Publication date Mar 2, 2023
- Intel Corporation
- Ian Alexander Young
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...
- Publication number 20230057128
- Publication date Feb 23, 2023
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH INTEGR...
- Publication number 20230050152
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC LAMINATED FILM, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY,...
- Publication number 20230028652
- Publication date Jan 26, 2023
- TOHOKU UNIVERSITY
- Yoshiaki SAITO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FUNCTION SWITCHABLE MAGNETIC RANDOM ACCESS MEMORY AND METHOD FOR MA...
- Publication number 20230011349
- Publication date Jan 12, 2023
- Institute of Semiconductors, Chinese Academy of Sciences
- Kaiyou WANG
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC LOGIC DEVICE, CIRCUIT HAVING MAGNETIC LOGIC DEVICES, AND M...
- Publication number 20220385292
- Publication date Dec 1, 2022
- Nanyang Technological University
- Chu Keong Gerard Joseph LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WEAK FIELD STIMULATED SKYRMION NUCLEATION AND MANIPULATION FOR SPIN...
- Publication number 20220366955
- Publication date Nov 17, 2022
- Ohio State Innovation Foundation
- Binbin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE UNIT AND DATA WRITING AND READING METHODS THEREOF, MEMORY A...
- Publication number 20220352460
- Publication date Nov 3, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin YANG
- G11 - INFORMATION STORAGE
Information Patent Application
WEYL SEMIMETAL MATERIAL FOR MAGNETIC TUNNEL JUNCTION
- Publication number 20220328757
- Publication date Oct 13, 2022
- Regents of the University of Minnesota
- Duarte José Pereira de Sousa
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RECORDING ARRAY
- Publication number 20220310145
- Publication date Sep 29, 2022
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMRISTOR ELEMENT, SYNAPSE ELEMENT AND NEUROMORPHIC PROCESSOR INCLU...
- Publication number 20220293157
- Publication date Sep 15, 2022
- Samsung Electronics Co., Ltd.
- Jeong-Heon PARK
- G11 - INFORMATION STORAGE

using Hall-effect devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetoresistive effect element

Spin torque device having a spin current polarized at a canting ang...

Magnetic logic device, circuit having magnetic logic devices, and m...

Magnetoresistance effect element

Cryogenic magnetic device more particularly for logic component or...

Semiconductor circuits and devices based on low-energy consumption...

Weak field stimulated skyrmion nucleation and manipulation for spin...

Function switchable magnetic random access memory and method for ma...

Memory device

Magnetic recording array

Voltage control of SOT-MRAM for deterministic writing

Magnetic heterojunction structure and method for controlling and ac...

Spin-orbit-torque magnetoresistive random-access memory with integr...

Integration scheme for three terminal spin-orbit-torque (SOT) switc...

Neuromorphic device and method of driving same

Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cro...

Spin-orbit torque type magnetoresistance effect element, and method...

Spin-orbit torque magnetization rotational element, spin-orbit torq...

Electric field switchable magnetic devices

Magnetic memory device

Magnetic device with gate electrode

System and method for cryogenic hybrid technology computing and memory

Memory device, operation method of memory device and operation meth...

Valley spin hall effect based non-volatile memory

Spin current magnetization rotational element

Magnetoresistive effect element and magnetic memory

Switching of perpendicularly magnetized nanomagnets with spin-orbit...

Magnetic memory

Magnetoresistive element, magnetic memory device, and writing and r...

Spin current magnetization rotational element

Patents Applicationslast 30 patents

METHOD FOR SWITCHING MAGNETIC MOMENTS IN MAGNETIC MATERIAL USING SE...

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...

IMPLEMENTING COMPUTING FUNCTIONS USING SKYRMIONS

METHODS OF WRITING AND FORMING MEMORY DEVICE

MAGNETIC MEMORY ELEMENT

SYSTEMS AND METHODS FOR DETECTING NETWORK OUTAGES

MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...

SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...

MAGNETIC MEMORY USING SPIN CURRENT, OPERATING METHOD THEREOF, AND E...

MAGNETIC MEMORY DEVICE AND METHOD OF OPERATING THE SAME

MAGNETOELECTRIC SPIN-ORBIT DEVICE WITH IN-PLANE AND PERPENDICULAR M...

MAGNETORESISTIVE EFFECT ELEMENT

SEMICONDUCTOR CIRCUITS AND DEVICES BASED ON LOW-ENERGY CONSUMPTION...

MAGNETIC MEMORY

MAGNETIC HETEROJUNCTION STRUCTURE AND METHOD FOR CONTROLLING AND AC...

NEUROMORPHIC DEVICE AND METHOD OF DRIVING SAME

SPIN ORBIT-TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) WITH CRO...

MEMORY DEVICE

DIFFERENTIALLY PROGRAMMABLE MAGNETIC TUNNEL JUNCTION DEVICE AND SYS...

SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH INTEGR...

MAGNETIC LAMINATED FILM, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY,...

FUNCTION SWITCHABLE MAGNETIC RANDOM ACCESS MEMORY AND METHOD FOR MA...

MAGNETIC LOGIC DEVICE, CIRCUIT HAVING MAGNETIC LOGIC DEVICES, AND M...

WEAK FIELD STIMULATED SKYRMION NUCLEATION AND MANIPULATION FOR SPIN...

STORAGE UNIT AND DATA WRITING AND READING METHODS THEREOF, MEMORY A...

WEYL SEMIMETAL MATERIAL FOR MAGNETIC TUNNEL JUNCTION

MAGNETIC RECORDING ARRAY

MEMRISTOR ELEMENT, SYNAPSE ELEMENT AND NEUROMORPHIC PROCESSOR INCLU...