using ion implantation

Industry

CPC
H01L21/046

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/046using ion implantation

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 12,266,531
- Issue date Apr 1, 2025
- Mitsubishi Electric Corporation
- Junya Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and manufacturing methods thereof
- Patent number 12,261,046
- Issue date Mar 25, 2025
- Diodes Incorporated
- Jie Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 12,262,550
- Issue date Mar 25, 2025
- Diodes Incorporated
- Ching-Wen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device
- Patent number 12,255,227
- Issue date Mar 18, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC MOSFET device and method for manufacturing the same
- Patent number 12,256,561
- Issue date Mar 18, 2025
- Shenzhen Sanrise-Tech Co., LTD
- Dajie Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source-body self-aligned method of a vertical double diffused metal...
- Patent number 12,256,559
- Issue date Mar 18, 2025
- NATIONAL YANG MING CHIAO TUNG UNIVERSITY
- Bing-Yue Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,255,228
- Issue date Mar 18, 2025
- Fuji Electric Co., Ltd.
- Masanobu Iwaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide vertical conduction MOSFET device for power applica...
- Patent number 12,255,233
- Issue date Mar 18, 2025
- STMicroelectronics S.r.l.
- Mario Giuseppe Saggio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a grid
- Patent number 12,249,630
- Issue date Mar 11, 2025
- II-VI DELAWARE, INC.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with overlapping electric fiel...
- Patent number 12,243,910
- Issue date Mar 4, 2025
- Denso Corporation
- Shinichirou Miyahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar SiC MOSFET with retrograde implanted channel
- Patent number 12,230,675
- Issue date Feb 18, 2025
- HITACHI ENERGY LTD
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,230,704
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Yasuyuki Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
JBS device with improved electrical performances, and manufacturing...
- Patent number 12,224,358
- Issue date Feb 11, 2025
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 12,218,191
- Issue date Feb 4, 2025
- Diodes Incorporated
- Ching-Wen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,218,215
- Issue date Feb 4, 2025
- TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Shunsuke Asaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped semiconductor layer forming method
- Patent number 12,217,964
- Issue date Feb 4, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Virginie Maffini Alvaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device
- Patent number 12,218,187
- Issue date Feb 4, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing t...
- Patent number 12,211,902
- Issue date Jan 28, 2025
- Denso Corporation
- Masato Noborio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 12,206,028
- Issue date Jan 21, 2025
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,178
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for fabricating charge balanced (CB) trench-metal-oxide-...
- Patent number 12,191,384
- Issue date Jan 7, 2025
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and manufacturing method therefor
- Patent number 12,183,818
- Issue date Dec 31, 2024
- SOUTHEAST UNIVERSITY
- Weifeng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power converter
- Patent number 12,183,774
- Issue date Dec 31, 2024
- Mitsubishi Electric Corporation
- Shiro Hino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including current spread region
- Patent number 12,176,396
- Issue date Dec 24, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,166,069
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zheng-Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with sic semiconductor layer and raised portio...
- Patent number 12,142,648
- Issue date Nov 12, 2024
- Rohm Co., Ltd.
- Seiya Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC devices with shielding structure
- Patent number 12,119,377
- Issue date Oct 15, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky rectifier with surge-current ruggedness
- Patent number 12,107,173
- Issue date Oct 1, 2024
- Semiconductor Components Industries, LLC
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 12,107,123
- Issue date Oct 1, 2024
- Fuji Electric Co., Ltd.
- Takumi Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a silicon carbide drift zone over a sil...
- Patent number 12,107,141
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING DEEP SUPPORT SHIELDS...
- Publication number 20250120133
- Publication date Apr 10, 2025
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20250120147
- Publication date Apr 10, 2025
- DENSO CORPORATION
- MASATO NOBORIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE
- Publication number 20250120148
- Publication date Apr 10, 2025
- ROHM CO., LTD.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250113556
- Publication date Apr 3, 2025
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED REGIONS OF A JUNCTION TERMINATION EXTENSION FOR SEMICONDUC...
- Publication number 20250107167
- Publication date Mar 27, 2025
- NEXPERIA B.V.
- Tim Böttcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250107146
- Publication date Mar 27, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP SURFACE OF A JUNCTION TERMINATION EXTENSION FOR SEMICONDUCTOR D...
- Publication number 20250107165
- Publication date Mar 27, 2025
- NEXPERIA B.V.
- Tim Böttcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250095992
- Publication date Mar 20, 2025
- YUEZHOU SEMICONDUCTOR MANUFACTURING ELECTRONICS (SHAOXING) CORP
- Xiang LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A POWER SEMICONDUCTOR DEVICE, A POWER CONVERTER INCLUDING THE SAME...
- Publication number 20250098236
- Publication date Mar 20, 2025
- LX Semicon Co., Ltd.
- Ho Jung LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20250089283
- Publication date Mar 13, 2025
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CONTROLLING CHANNEL LENGTH OF SIC MOSFET
- Publication number 20250048664
- Publication date Feb 6, 2025
- POWER CUBESEMI INC.
- Tai Young KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) AND MET...
- Publication number 20250040197
- Publication date Jan 30, 2025
- THE RESEARCH FOUNDATION FOR THE STATE UNIVERSTIY OF NEW YORK
- Woongje SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SiC SEMICONDUCTOR LAYER AND RAISED PORTIO...
- Publication number 20250031428
- Publication date Jan 23, 2025
- ROHM CO., LTD.
- Seiya NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031394
- Publication date Jan 23, 2025
- FUJI ELECTRIC CO., LTD.
- Shin MIYAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250015203
- Publication date Jan 9, 2025
- HUBEI JIUFENGSHAN LABORATORY
- Jun YUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250006497
- Publication date Jan 2, 2025
- YUEZHOU SEMICONDUCTOR MANUFACTURING ELECTRONICS (SHAOXING) CORP
- Xiang LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMIC...
- Publication number 20240413197
- Publication date Dec 12, 2024
- Wolfspeed, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFETS WITH IMPLANTED CHARGE COMPENSATION REGIONS
- Publication number 20240387620
- Publication date Nov 21, 2024
- Wolfspeed, Inc.
- Kijeong Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANTATION MASK FORMATION
- Publication number 20240379357
- Publication date Nov 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- Wei-Chao CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS CONTROLLED DIODE AND MANUFACTURING METHOD THEREOF
- Publication number 20240363767
- Publication date Oct 31, 2024
- LEAP Semiconductor Corp.
- Kuo-Chi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH LOW BARRIER HEIGHT SCHOTTKY CONTACTS
- Publication number 20240355897
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Neal Oldham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH FIELD-SHIELD CONTACTS AND BASE CONTACTS
- Publication number 20240355872
- Publication date Oct 24, 2024
- GLOBALFOUNDRIES U.S. Inc.
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND METHOD OF MAN...
- Publication number 20240355922
- Publication date Oct 24, 2024
- Mitsubishi Electric Corporation
- Katsutoshi SUGAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20240355885
- Publication date Oct 24, 2024
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240339323
- Publication date Oct 10, 2024
- Fuji Electric Co., Ltd.
- Atsushi YOSHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20240321951
- Publication date Sep 26, 2024
- DENSO CORPORATION
- RYOTA SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH INTEGRATED TEST STRUCTURES
- Publication number 20240321651
- Publication date Sep 26, 2024
- Woflspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20240313083
- Publication date Sep 19, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...
- Publication number 20240313053
- Publication date Sep 19, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS

using ion implantation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing silicon carbide semiconductor device

Semiconductor structures and manufacturing methods thereof

Semiconductor structure and manufacturing method thereof

SiC semiconductor device

SiC MOSFET device and method for manufacturing the same

Source-body self-aligned method of a vertical double diffused metal...

Silicon carbide semiconductor device and method of manufacturing si...

Silicon carbide vertical conduction MOSFET device for power applica...

Method for manufacturing a grid

Silicon carbide semiconductor device with overlapping electric fiel...

Planar SiC MOSFET with retrograde implanted channel

Semiconductor device

JBS device with improved electrical performances, and manufacturing...

Semiconductor structure and manufacturing method thereof

Semiconductor device and method of manufacturing semiconductor device

Doped semiconductor layer forming method

SiC semiconductor device

Silicon carbide semiconductor device and method for manufacturing t...

Single sided channel mesa power junction field effect transistor

Semiconductor device

Techniques for fabricating charge balanced (CB) trench-metal-oxide-...

Power semiconductor device and manufacturing method therefor

Power converter

Semiconductor device including current spread region

Semiconductor device and manufacturing method thereof

Semiconductor device with sic semiconductor layer and raised portio...

SiC devices with shielding structure

Schottky rectifier with surge-current ruggedness

Silicon carbide semiconductor device

Semiconductor device having a silicon carbide drift zone over a sil...

Patents Applicationslast 30 patents

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING DEEP SUPPORT SHIELDS...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

SiC SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

RECESSED REGIONS OF A JUNCTION TERMINATION EXTENSION FOR SEMICONDUC...

SEMICONDUCTOR DEVICE

TOP SURFACE OF A JUNCTION TERMINATION EXTENSION FOR SEMICONDUCTOR D...

MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR

A POWER SEMICONDUCTOR DEVICE, A POWER CONVERTER INCLUDING THE SAME...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

METHOD OF CONTROLLING CHANNEL LENGTH OF SIC MOSFET

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) AND MET...

SEMICONDUCTOR DEVICE WITH SiC SEMICONDUCTOR LAYER AND RAISED PORTIO...

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

SCHOTTKY BARRIER DIODE DEVICE AND MANUFACTURING METHOD THEREFOR

MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR

SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMIC...

MOSFETS WITH IMPLANTED CHARGE COMPENSATION REGIONS

IMPLANTATION MASK FORMATION

MOS CONTROLLED DIODE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES WITH LOW BARRIER HEIGHT SCHOTTKY CONTACTS

TRANSISTORS WITH FIELD-SHIELD CONTACTS AND BASE CONTACTS

SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND METHOD OF MAN...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICES WITH INTEGRATED TEST STRUCTURES

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...