using ion implantation

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CPC
H01L21/046

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/046using ion implantation

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device, semiconductor device manufacturing method, in...
- Patent number 12,328,900
- Issue date Jun 10, 2025
- Kabushiki Kaisha Toshiba
- Shinichi Kimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide semiconductor field effect transistor device and manufa...
- Patent number 12,328,932
- Issue date Jun 10, 2025
- LG Electronics Inc.
- Hojung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a silicon carbide semiconductor component
- Patent number 12,324,203
- Issue date Jun 3, 2025
- Infineon Technologies AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device with efficient edge...
- Patent number 12,308,235
- Issue date May 20, 2025
- STMicroelectronics S.r.l.
- Edoardo Zanetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to increase MOSFET threshold voltage
- Patent number 12,308,237
- Issue date May 20, 2025
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device, power conversion apparatus, a...
- Patent number 12,310,076
- Issue date May 20, 2025
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOSFET device and manufacturing method thereof
- Patent number 12,310,042
- Issue date May 20, 2025
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of robust, high-performance devices
- Patent number 12,302,613
- Issue date May 13, 2025
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
And manufacture of robust, high-performance devices
- Patent number 12,302,612
- Issue date May 13, 2025
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide components and methods for producing silicon carbid...
- Patent number 12,302,619
- Issue date May 13, 2025
- Infineon Technologies AG
- Roland Rupp
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 12,295,158
- Issue date May 6, 2025
- Sumitomo Electric Industries, Ltd.
- Yu Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,288,817
- Issue date Apr 29, 2025
- Denso Corporation
- Masato Noborio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 12,278,274
- Issue date Apr 15, 2025
- Denso Corporation
- Hidemoto Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 12,266,531
- Issue date Apr 1, 2025
- Mitsubishi Electric Corporation
- Junya Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and manufacturing methods thereof
- Patent number 12,261,046
- Issue date Mar 25, 2025
- Diodes Incorporated
- Jie Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 12,262,550
- Issue date Mar 25, 2025
- Diodes Incorporated
- Ching-Wen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device
- Patent number 12,255,227
- Issue date Mar 18, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC MOSFET device and method for manufacturing the same
- Patent number 12,256,561
- Issue date Mar 18, 2025
- Shenzhen Sanrise-Tech Co., LTD
- Dajie Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,255,228
- Issue date Mar 18, 2025
- Fuji Electric Co., Ltd.
- Masanobu Iwaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source-body self-aligned method of a vertical double diffused metal...
- Patent number 12,256,559
- Issue date Mar 18, 2025
- NATIONAL YANG MING CHIAO TUNG UNIVERSITY
- Bing-Yue Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide vertical conduction MOSFET device for power applica...
- Patent number 12,255,233
- Issue date Mar 18, 2025
- STMicroelectronics S.r.l.
- Mario Giuseppe Saggio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a grid
- Patent number 12,249,630
- Issue date Mar 11, 2025
- II-VI DELAWARE, INC.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with overlapping electric fiel...
- Patent number 12,243,910
- Issue date Mar 4, 2025
- Denso Corporation
- Shinichirou Miyahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar SiC MOSFET with retrograde implanted channel
- Patent number 12,230,675
- Issue date Feb 18, 2025
- HITACHI ENERGY LTD
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,230,704
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Yasuyuki Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
JBS device with improved electrical performances, and manufacturing...
- Patent number 12,224,358
- Issue date Feb 11, 2025
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 12,218,191
- Issue date Feb 4, 2025
- Diodes Incorporated
- Ching-Wen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,218,215
- Issue date Feb 4, 2025
- TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Shunsuke Asaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped semiconductor layer forming method
- Patent number 12,217,964
- Issue date Feb 4, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Virginie Maffini Alvaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device
- Patent number 12,218,187
- Issue date Feb 4, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ASHABLE MASK FOR SiC TRENCH IMPLANT
- Publication number 20250226224
- Publication date Jul 10, 2025
- Applied Materials, Inc.
- Ludovico MEGALINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures and Manufacturing Methods Thereof
- Publication number 20250210352
- Publication date Jun 26, 2025
- DIODES INCORPORATED
- Jie LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures and Manufacturing Methods Thereof
- Publication number 20250210353
- Publication date Jun 26, 2025
- DIODES INCORPORATED
- Jie LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures and Manufacturing Methods Thereof
- Publication number 20250210351
- Publication date Jun 26, 2025
- DIODES INCORPORATED
- Jie LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures and Manufacturing Methods Thereof
- Publication number 20250210349
- Publication date Jun 26, 2025
- DIODES INCORPORATED
- Jie LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures and Manufacturing Methods Thereof
- Publication number 20250210350
- Publication date Jun 26, 2025
- DIODES INCORPORATED
- Jie LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC EDGE TERMINATION
- Publication number 20250203960
- Publication date Jun 19, 2025
- Wolfspeed, Inc.
- Jae-Hyung Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE VERTICAL CONDUCTION MOSFET DEVICE FOR POWER APPLICA...
- Publication number 20250203977
- Publication date Jun 19, 2025
- STMicroelectronics S.r.l.
- Mario Giuseppe SAGGIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE...
- Publication number 20250185287
- Publication date Jun 5, 2025
- Fuji Electric Co., Ltd.
- Makoto UTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MANUFACTURING POWER SEMICONDUCTOR DEVICES AND POWER SEM...
- Publication number 20250183035
- Publication date Jun 5, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Alexander Viktorovich BOLOTNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE WITH OVERLAPPING ELECTRIC FIEL...
- Publication number 20250169127
- Publication date May 22, 2025
- DENSO CORPORATION
- SHINICHIROU MIYAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250169103
- Publication date May 22, 2025
- Fuji Electric Co., Ltd.
- Yasuyuki HOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TRENCH POWER SEMICONDUCTOR DEVICES WITH DEEP JFET PATTERNS
- Publication number 20250169128
- Publication date May 22, 2025
- Wolfspeed, Inc.
- Naeem Islam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT SUPPORT SHIELD STRUCTURES FOR TRENCHED SEMICONDUCTOR DEVICES...
- Publication number 20250159948
- Publication date May 15, 2025
- Wolfspeed, Inc.
- Madankumar Sampath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER FINFETS WITH ALTERNATING SHIELDING REGIONS AND ONE-PIECE CONT...
- Publication number 20250142869
- Publication date May 1, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING DEEP SUPPORT SHIELDS...
- Publication number 20250120133
- Publication date Apr 10, 2025
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20250120147
- Publication date Apr 10, 2025
- DENSO CORPORATION
- MASATO NOBORIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE
- Publication number 20250120148
- Publication date Apr 10, 2025
- ROHM CO., LTD.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250113556
- Publication date Apr 3, 2025
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED REGIONS OF A JUNCTION TERMINATION EXTENSION FOR SEMICONDUC...
- Publication number 20250107167
- Publication date Mar 27, 2025
- NEXPERIA B.V.
- Tim Böttcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP SURFACE OF A JUNCTION TERMINATION EXTENSION FOR SEMICONDUCTOR D...
- Publication number 20250107165
- Publication date Mar 27, 2025
- NEXPERIA B.V.
- Tim Böttcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250107146
- Publication date Mar 27, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250095992
- Publication date Mar 20, 2025
- YUEZHOU SEMICONDUCTOR MANUFACTURING ELECTRONICS (SHAOXING) CORP
- Xiang LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A POWER SEMICONDUCTOR DEVICE, A POWER CONVERTER INCLUDING THE SAME...
- Publication number 20250098236
- Publication date Mar 20, 2025
- LX Semicon Co., Ltd.
- Ho Jung LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20250089283
- Publication date Mar 13, 2025
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CONTROLLING CHANNEL LENGTH OF SIC MOSFET
- Publication number 20250048664
- Publication date Feb 6, 2025
- POWER CUBESEMI INC.
- Tai Young KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) AND MET...
- Publication number 20250040197
- Publication date Jan 30, 2025
- THE RESEARCH FOUNDATION FOR THE STATE UNIVERSTIY OF NEW YORK
- Woongje SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SiC SEMICONDUCTOR LAYER AND RAISED PORTIO...
- Publication number 20250031428
- Publication date Jan 23, 2025
- ROHM CO., LTD.
- Seiya NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031394
- Publication date Jan 23, 2025
- FUJI ELECTRIC CO., LTD.
- Shin MIYAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS

using ion implantation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device, semiconductor device manufacturing method, in...

Metal-oxide semiconductor field effect transistor device and manufa...

Method for producing a silicon carbide semiconductor component

Manufacturing method of a semiconductor device with efficient edge...

Ion implantation to increase MOSFET threshold voltage

Silicon carbide semiconductor device, power conversion apparatus, a...

Silicon carbide MOSFET device and manufacturing method thereof

Manufacture of robust, high-performance devices

And manufacture of robust, high-performance devices

Silicon carbide components and methods for producing silicon carbid...

Silicon carbide semiconductor device

Semiconductor device and method for manufacturing the same

Method of manufacturing silicon carbide semiconductor device

Method of manufacturing silicon carbide semiconductor device

Semiconductor structures and manufacturing methods thereof

Semiconductor structure and manufacturing method thereof

SiC semiconductor device

SiC MOSFET device and method for manufacturing the same

Silicon carbide semiconductor device and method of manufacturing si...

Source-body self-aligned method of a vertical double diffused metal...

Silicon carbide vertical conduction MOSFET device for power applica...

Method for manufacturing a grid

Silicon carbide semiconductor device with overlapping electric fiel...

Planar SiC MOSFET with retrograde implanted channel

Semiconductor device

JBS device with improved electrical performances, and manufacturing...

Semiconductor structure and manufacturing method thereof

Semiconductor device and method of manufacturing semiconductor device

Doped semiconductor layer forming method

SiC semiconductor device

Patents Applicationslast 30 patents

ASHABLE MASK FOR SiC TRENCH IMPLANT

Semiconductor Structures and Manufacturing Methods Thereof

Semiconductor Structures and Manufacturing Methods Thereof

Semiconductor Structures and Manufacturing Methods Thereof

Semiconductor Structures and Manufacturing Methods Thereof

Semiconductor Structures and Manufacturing Methods Thereof

ASYMMETRIC EDGE TERMINATION

SILICON CARBIDE VERTICAL CONDUCTION MOSFET DEVICE FOR POWER APPLICA...

METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE...

METHODS FOR MANUFACTURING POWER SEMICONDUCTOR DEVICES AND POWER SEM...

SILICON CARBIDE SEMICONDUCTOR DEVICE WITH OVERLAPPING ELECTRIC FIEL...

SEMICONDUCTOR DEVICE

GATE TRENCH POWER SEMICONDUCTOR DEVICES WITH DEEP JFET PATTERNS

SPLIT SUPPORT SHIELD STRUCTURES FOR TRENCHED SEMICONDUCTOR DEVICES...

POWER FINFETS WITH ALTERNATING SHIELDING REGIONS AND ONE-PIECE CONT...

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING DEEP SUPPORT SHIELDS...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

SiC SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

RECESSED REGIONS OF A JUNCTION TERMINATION EXTENSION FOR SEMICONDUC...

TOP SURFACE OF A JUNCTION TERMINATION EXTENSION FOR SEMICONDUCTOR D...

SEMICONDUCTOR DEVICE

MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR

A POWER SEMICONDUCTOR DEVICE, A POWER CONVERTER INCLUDING THE SAME...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

METHOD OF CONTROLLING CHANNEL LENGTH OF SIC MOSFET

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) AND MET...

SEMICONDUCTOR DEVICE WITH SiC SEMICONDUCTOR LAYER AND RAISED PORTIO...

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...