using magnetic or induction elements

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CPC
G11C17/02

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GPHYSICS G11Information storage G11CSTATIC STORES G11C17/00Read-only memories programmable only once Semi-permanent stores

Current Industry

G11C17/02using magnetic or induction elements

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory with one-time programmable (OTP) cells
- Patent number 12,224,024
- Issue date Feb 11, 2025
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
MJT based anti-fuses with low programming voltage
- Patent number 11,563,054
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Dimitri Houssameddine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including reversible and one-time programmabl...
- Patent number 10,431,276
- Issue date Oct 1, 2019
- Samsung Electronics Co., Ltd.
- Boyoung Seo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices including reversible and one-time programmabl...
- Patent number 10,311,928
- Issue date Jun 4, 2019
- Samsung Electronics Co., Ltd.
- Boyoung Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-time programming (OTP) magneto-resistive random access memory (...
- Patent number 10,311,930
- Issue date Jun 4, 2019
- QUALCOMM Incorporated
- Sungryul Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive reference scheme for magnetic memory applications
- Patent number 10,102,896
- Issue date Oct 16, 2018
- Headway Technologies, Inc.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
OTP cell with reversed MTJ connection
- Patent number 9,966,149
- Issue date May 8, 2018
- QUALCOMM Incorporated
- Jung Pill Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Implementation of a one time programmable memory using a MRAM stack...
- Patent number 9,805,816
- Issue date Oct 31, 2017
- Headway Technologies, Inc.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming of non-volatile memory subjected to high temperature ex...
- Patent number 9,793,003
- Issue date Oct 17, 2017
- Avalanche Technology, Inc.
- Ebrahim Abedifard
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable device with integrated heat sink
- Patent number 9,767,915
- Issue date Sep 19, 2017
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive reference scheme for magnetic memory applications
- Patent number 9,747,965
- Issue date Aug 29, 2017
- Headway Technologies, Inc.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
OTP cell with reversed MTJ connection
- Patent number 9,679,663
- Issue date Jun 13, 2017
- QUALCOMM Incorporated
- Jung Pill Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Field programming method for magnetic memory devices
- Patent number 9,349,429
- Issue date May 24, 2016
- III Holdings 1, LLC
- Krishnakumar Mani
- G11 - INFORMATION STORAGE
Information Patent Grant
Physically unclonable function based on breakdown voltage of metal-...
- Patent number 9,298,946
- Issue date Mar 29, 2016
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
OTP cell with reversed MTJ connection
- Patent number 9,245,610
- Issue date Jan 26, 2016
- QUALCOMM Incorporated
- Jung Pill Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance-based memory cells with multiple source lines
- Patent number 9,196,339
- Issue date Nov 24, 2015
- QUALCOMM Incorporated
- Xiangyu Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Error detection and correction of one-time programmable elements
- Patent number 9,183,082
- Issue date Nov 10, 2015
- QUALCOMM Incorporated
- Jung Pill Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
OTP scheme with multiple magnetic tunnel junction devices in a cell
- Patent number 9,165,631
- Issue date Oct 20, 2015
- QUALCOMM Incorporated
- Jung Pill Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Low cost programmable multi-state device
- Patent number 9,093,149
- Issue date Jul 28, 2015
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-reversible state at a bitcell having a first magnetic tunnel ju...
- Patent number 8,797,792
- Issue date Aug 5, 2014
- QUALCOMM Incorporated
- Hari M. Rao
- G11 - INFORMATION STORAGE
Information Patent Grant
Field programming method for magnetic memory devices
- Patent number 8,767,435
- Issue date Jul 1, 2014
- III Holdings 1, LLC
- Krishnakumar Mani
- G11 - INFORMATION STORAGE
Information Patent Grant
Generating a non-reversible state at a bitcell having a first magne...
- Patent number 8,547,736
- Issue date Oct 1, 2013
- QUALCOMM Incorporated
- Hari M. Rao
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable magnetic read only memory (MROM)
- Patent number 7,796,421
- Issue date Sep 14, 2010
- MagSil Corporation
- Krishnakumar Mani
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory system using MRAM-sensor
- Patent number 7,791,937
- Issue date Sep 7, 2010
- NXP B.V.
- Friso J. Jedema
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming matrix
- Patent number 7,649,770
- Issue date Jan 19, 2010
- Siemens Aktiengesellschaft
- Joachim Bangert
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory and method of reading data in the same
- Patent number 6,847,539
- Issue date Jan 25, 2005
- Fujitsu Limited
- Masaki Aoki
- G11 - INFORMATION STORAGE
Information Patent Grant
Device that makes it possible to selectively use nonvolatile memory...
- Patent number 6,785,158
- Issue date Aug 31, 2004
- Renesas Technology Corp.
- Hidenori Nagashima
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit static write--read and erase semiconductor memory
- Patent number 5,798,963
- Issue date Aug 25, 1998
- Hyundai Electronics Industries Co., Ltd.
- Adam Sempa Iga
- G11 - INFORMATION STORAGE
Information Patent Grant
Electromagnetic sensor and memory device
- Patent number 4,103,340
- Issue date Jul 25, 1978
- Minnesota Mining and Manufacturing Company
- Richard E. Fayling
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
3924248
- Patent number 3,924,248
- Issue date Dec 2, 1975
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
OPERATING METHOD OF PHYSICALLY UNCLONABLE FUNCTION MAGNETIC MEMORY...
- Publication number 20220231867
- Publication date Jul 21, 2022
- KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION(
- Kyung Jin LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MJT BASED ANTI-FUSES WITH LOW PROGRAMMING VOLTAGE
- Publication number 20200303452
- Publication date Sep 24, 2020
- International Business Machines Corporation
- Dimitri Houssameddine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING REVERSIBLE AND ONE-TIME PROGRAMMABL...
- Publication number 20190198077
- Publication date Jun 27, 2019
- Samsung Electronics Co., Ltd.
- Boyoung SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR USING REFERENCE RESISTOR IN ONE-TIME PROGR...
- Publication number 20190180173
- Publication date Jun 13, 2019
- GYRFALCON TECHNOLOGY INC.
- Chyu-Jiuh Torng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Adaptive Reference Scheme for Magnetic Memory Applications
- Publication number 20170352395
- Publication date Dec 7, 2017
- HEADWAY TECHNOLOGIES, INC.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
Adaptive Reference Scheme for Magnetic Memory Applications
- Publication number 20170186472
- Publication date Jun 29, 2017
- HEADWAY TECHNOLOGIES, INC.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
OTP CELL WITH REVERSED MTJ CONNECTION
- Publication number 20170178741
- Publication date Jun 22, 2017
- QUALCOMM Incorporated
- Jung Pill Kim
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING REVERSIBLE AND ONE-TIME PROGRAMMABL...
- Publication number 20170110171
- Publication date Apr 20, 2017
- BOYOUNG SEO
- G11 - INFORMATION STORAGE
Information Patent Application
Implementation of a One Time Programmable Memory Using a MRAM Stack...
- Publication number 20160293268
- Publication date Oct 6, 2016
- HEADWAY TECHNOLOGIES, INC.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD PROGRAMMING METHOD FOR MAGNETIC MEMORY DEVICES
- Publication number 20140313820
- Publication date Oct 23, 2014
- Krishnakumar Mani
- G11 - INFORMATION STORAGE
Information Patent Application
ERROR DETECTION AND CORRECTION OF ONE-TIME PROGRAMMABLE ELEMENTS
- Publication number 20140215294
- Publication date Jul 31, 2014
- QUALCOMM Incorporated
- Jung Pill Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
OTP SCHEME WITH MULTIPLE MAGNETIC TUNNEL JUNCTION DEVICES IN A CELL
- Publication number 20140071740
- Publication date Mar 13, 2014
- QUALCOMM Incorporated
- Jung Pill Kim
- G11 - INFORMATION STORAGE
Information Patent Application
OTP CELL WITH REVERSED MTJ CONNECTION
- Publication number 20140071741
- Publication date Mar 13, 2014
- QUALCOMM Incorporated
- Jung Pill Kim
- G11 - INFORMATION STORAGE
Information Patent Application
LOW COST PROGRAMMABLE MULTI-STATE DEVICE
- Publication number 20140063895
- Publication date Mar 6, 2014
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Application
NON-REVERSIBLE STATE AT A BITCELL HAVING A FIRST MAGNETIC TUNNEL JU...
- Publication number 20140010006
- Publication date Jan 9, 2014
- QUALCOMM Incorporated
- Hari M. Rao
- G11 - INFORMATION STORAGE
Information Patent Application
Generating a Non-Reversible State at a Bitcell Having a First Magne...
- Publication number 20120033490
- Publication date Feb 9, 2012
- QUALCOMM Incorporated
- Hari M. Rao
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH DENSITY RECONFIGURABLE SPIN TORQUE NON-VOLATILE MEMORY
- Publication number 20100091546
- Publication date Apr 15, 2010
- Seagate Technology LLC
- Hongyue Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory System Using Mram-Sensor
- Publication number 20080316801
- Publication date Dec 25, 2008
- NXP B.V.
- Friso J. Jedema
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE MAGNETIC READ ONLY MEMORY (MROM)
- Publication number 20080278996
- Publication date Nov 13, 2008
- Krishnakumar Mani
- G11 - INFORMATION STORAGE
Information Patent Application
Programming Matrix
- Publication number 20080143382
- Publication date Jun 19, 2008
- Siemens Aktiengesellschaft
- Joachim Bangert
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Read-only magnetic memory device mrom
- Publication number 20070140099
- Publication date Jun 21, 2007
- Kars-Michiel Hubert Lenssen
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric memory and method of reading data in the same
- Publication number 20040114418
- Publication date Jun 17, 2004
- FUJITSU LIMITED
- Masaki Aoki
- G11 - INFORMATION STORAGE
Information Patent Application
Device that makes it possible to selectively use nonvolatile memory...
- Publication number 20030214834
- Publication date Nov 20, 2003
- Hidenori Nagashima
- G11 - INFORMATION STORAGE

using magnetic or induction elements

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory with one-time programmable (OTP) cells

MJT based anti-fuses with low programming voltage

Semiconductor devices including reversible and one-time programmabl...

Semiconductor devices including reversible and one-time programmabl...

One-time programming (OTP) magneto-resistive random access memory (...

Adaptive reference scheme for magnetic memory applications

OTP cell with reversed MTJ connection

Implementation of a one time programmable memory using a MRAM stack...

Programming of non-volatile memory subjected to high temperature ex...

One-time programmable device with integrated heat sink

Adaptive reference scheme for magnetic memory applications

OTP cell with reversed MTJ connection

Field programming method for magnetic memory devices

Physically unclonable function based on breakdown voltage of metal-...

OTP cell with reversed MTJ connection

Resistance-based memory cells with multiple source lines

Error detection and correction of one-time programmable elements

OTP scheme with multiple magnetic tunnel junction devices in a cell

Low cost programmable multi-state device

Non-reversible state at a bitcell having a first magnetic tunnel ju...

Field programming method for magnetic memory devices

Generating a non-reversible state at a bitcell having a first magne...

Programmable magnetic read only memory (MROM)

Magnetic memory system using MRAM-sensor

Programming matrix

Ferroelectric memory and method of reading data in the same

Device that makes it possible to selectively use nonvolatile memory...

Integrated circuit static write--read and erase semiconductor memory

Electromagnetic sensor and memory device

3924248

Patents Applicationslast 30 patents

OPERATING METHOD OF PHYSICALLY UNCLONABLE FUNCTION MAGNETIC MEMORY...

MJT BASED ANTI-FUSES WITH LOW PROGRAMMING VOLTAGE

SEMICONDUCTOR DEVICES INCLUDING REVERSIBLE AND ONE-TIME PROGRAMMABL...

METHOD AND APPARATUS FOR USING REFERENCE RESISTOR IN ONE-TIME PROGR...

Adaptive Reference Scheme for Magnetic Memory Applications

Adaptive Reference Scheme for Magnetic Memory Applications

OTP CELL WITH REVERSED MTJ CONNECTION

SEMICONDUCTOR DEVICES INCLUDING REVERSIBLE AND ONE-TIME PROGRAMMABL...

Implementation of a One Time Programmable Memory Using a MRAM Stack...

FIELD PROGRAMMING METHOD FOR MAGNETIC MEMORY DEVICES

ERROR DETECTION AND CORRECTION OF ONE-TIME PROGRAMMABLE ELEMENTS

OTP SCHEME WITH MULTIPLE MAGNETIC TUNNEL JUNCTION DEVICES IN A CELL

OTP CELL WITH REVERSED MTJ CONNECTION

LOW COST PROGRAMMABLE MULTI-STATE DEVICE

NON-REVERSIBLE STATE AT A BITCELL HAVING A FIRST MAGNETIC TUNNEL JU...

Generating a Non-Reversible State at a Bitcell Having a First Magne...

HIGH DENSITY RECONFIGURABLE SPIN TORQUE NON-VOLATILE MEMORY

Magnetic Memory System Using Mram-Sensor

PROGRAMMABLE MAGNETIC READ ONLY MEMORY (MROM)

Programming Matrix

Read-only magnetic memory device mrom

Ferroelectric memory and method of reading data in the same

Device that makes it possible to selectively use nonvolatile memory...