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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/0465using masks

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 12,266,531
- Issue date Apr 1, 2025
- Mitsubishi Electric Corporation
- Junya Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and manufacturing methods thereof
- Patent number 12,261,046
- Issue date Mar 25, 2025
- Diodes Incorporated
- Jie Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device
- Patent number 12,255,227
- Issue date Mar 18, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC MOSFET device and method for manufacturing the same
- Patent number 12,256,561
- Issue date Mar 18, 2025
- Shenzhen Sanrise-Tech Co., LTD
- Dajie Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source-body self-aligned method of a vertical double diffused metal...
- Patent number 12,256,559
- Issue date Mar 18, 2025
- NATIONAL YANG MING CHIAO TUNG UNIVERSITY
- Bing-Yue Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide vertical conduction MOSFET device for power applica...
- Patent number 12,255,233
- Issue date Mar 18, 2025
- STMicroelectronics S.r.l.
- Mario Giuseppe Saggio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,230,704
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Yasuyuki Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,218,215
- Issue date Feb 4, 2025
- TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Shunsuke Asaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device
- Patent number 12,218,187
- Issue date Feb 4, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 12,206,028
- Issue date Jan 21, 2025
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for fabricating charge balanced (CB) trench-metal-oxide-...
- Patent number 12,191,384
- Issue date Jan 7, 2025
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and manufacturing method therefor
- Patent number 12,183,818
- Issue date Dec 31, 2024
- SOUTHEAST UNIVERSITY
- Weifeng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power converter
- Patent number 12,183,774
- Issue date Dec 31, 2024
- Mitsubishi Electric Corporation
- Shiro Hino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with sic semiconductor layer and raised portio...
- Patent number 12,142,648
- Issue date Nov 12, 2024
- Rohm Co., Ltd.
- Seiya Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC devices with shielding structure
- Patent number 12,119,377
- Issue date Oct 15, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky rectifier with surge-current ruggedness
- Patent number 12,107,173
- Issue date Oct 1, 2024
- Semiconductor Components Industries, LLC
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a silicon carbide drift zone over a sil...
- Patent number 12,107,141
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implantation mask formation
- Patent number 12,100,592
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Chao Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall dopant shielding methods and approaches for trenched semic...
- Patent number 12,094,926
- Issue date Sep 17, 2024
- Wolfspeed, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device utilzing two hard ma...
- Patent number 12,087,812
- Issue date Sep 10, 2024
- Infineon Technologies AG
- Andreas Voerckel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device and method of manufacturing the...
- Patent number 12,074,200
- Issue date Aug 27, 2024
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,068,366
- Issue date Aug 20, 2024
- Fuji Electric Co., Ltd.
- Tomohiro Moriya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating sub-micron contacts to buried well devices
- Patent number 12,040,366
- Issue date Jul 16, 2024
- The Boeing Company
- Kangmu Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, and method for manufacturing the same
- Patent number 12,034,073
- Issue date Jul 9, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, and method for manufacturing the same
- Patent number 12,009,420
- Issue date Jun 11, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench structure and manufacturing m...
- Patent number 11,929,397
- Issue date Mar 12, 2024
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET in SiC with self-aligned lateral MOS channel
- Patent number 11,923,450
- Issue date Mar 5, 2024
- II-VI ADVANCED MATERIALS, LLC
- Adolf Schoner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,901,444
- Issue date Feb 13, 2024
- Mitsubishi Electric Corporation
- Ryu Kamibaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
And manufacture of self-aligned power devices
- Patent number 11,901,432
- Issue date Feb 13, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOSFET device and manufacturing method thereof
- Patent number 11,894,440
- Issue date Feb 6, 2024
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING DEEP SUPPORT SHIELDS...
- Publication number 20250120133
- Publication date Apr 10, 2025
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE
- Publication number 20250120148
- Publication date Apr 10, 2025
- ROHM CO., LTD.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250113556
- Publication date Apr 3, 2025
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250095992
- Publication date Mar 20, 2025
- YUEZHOU SEMICONDUCTOR MANUFACTURING ELECTRONICS (SHAOXING) CORP
- Xiang LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20250089283
- Publication date Mar 13, 2025
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CONTROLLING CHANNEL LENGTH OF SIC MOSFET
- Publication number 20250048664
- Publication date Feb 6, 2025
- POWER CUBESEMI INC.
- Tai Young KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SiC SEMICONDUCTOR LAYER AND RAISED PORTIO...
- Publication number 20250031428
- Publication date Jan 23, 2025
- ROHM CO., LTD.
- Seiya NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031394
- Publication date Jan 23, 2025
- FUJI ELECTRIC CO., LTD.
- Shin MIYAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250006497
- Publication date Jan 2, 2025
- YUEZHOU SEMICONDUCTOR MANUFACTURING ELECTRONICS (SHAOXING) CORP
- Xiang LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMIC...
- Publication number 20240413197
- Publication date Dec 12, 2024
- Wolfspeed, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANTATION MASK FORMATION
- Publication number 20240379357
- Publication date Nov 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- Wei-Chao CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH LOW BARRIER HEIGHT SCHOTTKY CONTACTS
- Publication number 20240355897
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Neal Oldham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH FIELD-SHIELD CONTACTS AND BASE CONTACTS
- Publication number 20240355872
- Publication date Oct 24, 2024
- GLOBALFOUNDRIES U.S. Inc.
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20240313083
- Publication date Sep 19, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20240297247
- Publication date Sep 5, 2024
- Fuji Electric Co., Ltd.
- Akimasa KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20240297248
- Publication date Sep 5, 2024
- Fuji Electric Co., Ltd.
- Akimasa KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH AUTO ALIGNED CSL AND EDGE TERMINATION STRUCT...
- Publication number 20240297249
- Publication date Sep 5, 2024
- STMicroelectronics International N.V.
- Alfio GUARNERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR MANUFACTURING LOCALIZED ION IMPLANTS IN SILICON-CARBIDE...
- Publication number 20240297044
- Publication date Sep 5, 2024
- STMicroelectronics International N.V.
- Cateno Marco CAMALLERI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240290881
- Publication date Aug 29, 2024
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC MOSFET, SIC MOSFET PREPARATION METHOD, AND INTEGRATED CIRCUIT
- Publication number 20240274710
- Publication date Aug 15, 2024
- Huawei Digital Power Technologies Co., Ltd.
- Wentao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240266351
- Publication date Aug 8, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Mitsuo OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER MOSFET DEVICE HAVING IMPROVED PERFORMANCES AN...
- Publication number 20240258377
- Publication date Aug 1, 2024
- STMicroelectronics International N.V.
- Mario Giuseppe SAGGIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...
- Publication number 20240258424
- Publication date Aug 1, 2024
- Fuji Electric Co., Ltd.
- Yoshiyuki SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER USING SILI...
- Publication number 20240250165
- Publication date Jul 25, 2024
- Mitsubishi Electric Corporation
- Kotaro KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240234536
- Publication date Jul 11, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING SELF-ALIGNED TRENCH...
- Publication number 20240234495
- Publication date Jul 11, 2024
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED JFET DEVICE
- Publication number 20240204111
- Publication date Jun 20, 2024
- Semiconductor Components Industries, LLC
- Alexander Viktorovich BOLOTNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240204097
- Publication date Jun 20, 2024
- ROHM CO., LTD.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DE...
- Publication number 20240178269
- Publication date May 30, 2024
- Semiconductor Components Industries, LLC
- Jimmy Robert Hannes FRANCHI
- H01 - BASIC ELECTRIC ELEMENTS

using masks

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing silicon carbide semiconductor device

Semiconductor structures and manufacturing methods thereof

SiC semiconductor device

SiC MOSFET device and method for manufacturing the same

Source-body self-aligned method of a vertical double diffused metal...

Silicon carbide vertical conduction MOSFET device for power applica...

Semiconductor device

Semiconductor device and method of manufacturing semiconductor device

SiC semiconductor device

Single sided channel mesa power junction field effect transistor

Techniques for fabricating charge balanced (CB) trench-metal-oxide-...

Power semiconductor device and manufacturing method therefor

Power converter

Semiconductor device with sic semiconductor layer and raised portio...

SiC devices with shielding structure

Schottky rectifier with surge-current ruggedness

Semiconductor device having a silicon carbide drift zone over a sil...

Implantation mask formation

Sidewall dopant shielding methods and approaches for trenched semic...

Method of manufacturing a semiconductor device utilzing two hard ma...

Insulated-gate semiconductor device and method of manufacturing the...

Semiconductor device

Fabricating sub-micron contacts to buried well devices

Semiconductor device, and method for manufacturing the same

Semiconductor device, and method for manufacturing the same

Semiconductor device including trench structure and manufacturing m...

MOSFET in SiC with self-aligned lateral MOS channel

Method for manufacturing semiconductor device

And manufacture of self-aligned power devices

Silicon carbide MOSFET device and manufacturing method thereof

Patents Applicationslast 30 patents

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING DEEP SUPPORT SHIELDS...

SiC SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

METHOD OF CONTROLLING CHANNEL LENGTH OF SIC MOSFET

SEMICONDUCTOR DEVICE WITH SiC SEMICONDUCTOR LAYER AND RAISED PORTIO...

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR

SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMIC...

IMPLANTATION MASK FORMATION

SEMICONDUCTOR DEVICES WITH LOW BARRIER HEIGHT SCHOTTKY CONTACTS

TRANSISTORS WITH FIELD-SHIELD CONTACTS AND BASE CONTACTS

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

ELECTRONIC DEVICE WITH AUTO ALIGNED CSL AND EDGE TERMINATION STRUCT...

PROCESS FOR MANUFACTURING LOCALIZED ION IMPLANTS IN SILICON-CARBIDE...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SIC MOSFET, SIC MOSFET PREPARATION METHOD, AND INTEGRATED CIRCUIT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE POWER MOSFET DEVICE HAVING IMPROVED PERFORMANCES AN...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER USING SILI...

SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING SELF-ALIGNED TRENCH...

SELF-ALIGNED JFET DEVICE

SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DE...