using melted materials

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H01L21/02625

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02625using melted materials

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method for producing a single crystal from semiconductor material b...
- Patent number 11,788,201
- Issue date Oct 17, 2023
- Siltronic AG
- Ludwig Altmannshofer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
- Patent number 11,784,045
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Grant
High efficiency ultraviolet light emitting diode with electron tunn...
- Patent number 11,646,395
- Issue date May 9, 2023
- Trustees of Boston University
- Yitao Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liquid phase epitaxy of III-V materials and alloys
- Patent number 11,441,234
- Issue date Sep 13, 2022
- University of Louisville Research Foundation, Inc.
- Mahendra K. Sunkara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
- Patent number 11,251,042
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Grant
Melt-growth of single-crystal alloy semiconductor structures and se...
- Patent number 11,198,951
- Issue date Dec 14, 2021
- University of Southampton
- Frederic Yannick Gardes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, gallium nitride single crystal, and method...
- Patent number 11,162,189
- Issue date Nov 2, 2021
- Dexerials Corporation
- Kazuhiro Yagihashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Paste composition and method for forming silicon germanium layer
- Patent number 10,916,423
- Issue date Feb 9, 2021
- Toyo Aluminium Kabushiki Kaisha
- Marwan Dhamrin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer made of monocrystalline silicon, and method for...
- Patent number 10,844,515
- Issue date Nov 24, 2020
- Siltronic AG
- Timo Mueller
- C30 - CRYSTAL GROWTH
Information Patent Grant
Free-standing substrate comprising polycrystalline group 13 element...
- Patent number 10,804,432
- Issue date Oct 13, 2020
- NGK Insulators, Ltd.
- Katsuhiro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Free-standing substrate comprising polycrystalline group 13 element...
- Patent number 10,734,548
- Issue date Aug 4, 2020
- NGK Insulators, Ltd.
- Katsuhiro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for manufacturing semiconductor substrate
- Patent number 10,720,327
- Issue date Jul 21, 2020
- HONG WU YES ENGINEERING TECHNOGOLOGY RESEARCH INSTITUTE CO., LTD.
- Guangwu Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
One-step growth of a dense, photoresponsive silicon film in molten...
- Patent number 10,697,080
- Issue date Jun 30, 2020
- Board of Regents of the University of Texas System
- Allen J. Bard
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Silicon-based molten composition and manufacturing method of SiC si...
- Patent number 10,662,547
- Issue date May 26, 2020
- LG Chem, Ltd.
- Chan Yeup Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for producing gallium oxide crystal
- Patent number 10,570,528
- Issue date Feb 25, 2020
- Shinshu University
- Keigo Hoshikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
High efficiency ultraviolet light emitting diode with band structur...
- Patent number 10,535,801
- Issue date Jan 14, 2020
- Trustees of Boston University
- Yitao Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor wafer
- Patent number 10,508,361
- Issue date Dec 17, 2019
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing Group III nitride semiconductor including grow...
- Patent number 10,329,687
- Issue date Jun 25, 2019
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing group-III nitride semiconductor crystal su...
- Patent number 10,309,036
- Issue date Jun 4, 2019
- Osaka University
- Yusuke Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-deposition of black silicon
- Patent number 10,276,740
- Issue date Apr 30, 2019
- The United States of America as represented by the Secretary of the Air Force
- Rajani Ayachitula
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing group-III nitride crystal, group-III nitride c...
- Patent number 10,266,965
- Issue date Apr 23, 2019
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride crystal substrate and substrate fo...
- Patent number 10,260,165
- Issue date Apr 16, 2019
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing group III nitride crystal and apparatus for p...
- Patent number 10,202,710
- Issue date Feb 12, 2019
- Osaka University
- Yusuke Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing SiC single crystal
- Patent number 10,145,025
- Issue date Dec 4, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuaki Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride crystal, group III nitride c...
- Patent number 9,834,859
- Issue date Dec 5, 2017
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor formation by lateral diffusion liquid phase epitaxy
- Patent number 9,824,892
- Issue date Nov 21, 2017
- McMaster University
- Adrian Kitai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods of growing heteroepitaxial single crystal or large grained...
- Patent number 9,722,130
- Issue date Aug 1, 2017
- Solar Tectic LLC
- Praveen Chaudhari
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing the growth of a semiconductor material
- Patent number 9,719,187
- Issue date Aug 1, 2017
- Societe Francaise de Detecteurs Infrarouges-Sofradir
- Sylvain Paltrier
- C30 - CRYSTAL GROWTH
Information Patent Grant
High efficiency ultraviolet light emitting diode with band structur...
- Patent number 9,627,580
- Issue date Apr 18, 2017
- Trustees of Boston University
- Yitao Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for fabricating a layer in semiconductor material
- Patent number 9,528,196
- Issue date Dec 27, 2016
- Soitec
- Michel Bruel
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20240030027
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF RF COMPONENTS
- Publication number 20230048614
- Publication date Feb 16, 2023
- STMicroelectronics (Tours) SAS
- Patrick HAUTTECOEUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20220130669
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A SINGLE CRYSTAL FROM SEMICONDUCTOR MATERIAL B...
- Publication number 20210222319
- Publication date Jul 22, 2021
- Siltronic AG
- Ludwig ALTMANNSHOFER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIQUID PHASE EPITAXY OF III-V MATERIALS AND ALLOYS
- Publication number 20210108330
- Publication date Apr 15, 2021
- UNIVERSITY OF LOUISVILLE RESEARCH FOUNDATION, INC.
- Mahendra K. Sunkara
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE, FUNCTIONAL...
- Publication number 20210013366
- Publication date Jan 14, 2021
- NGK Insulators, Ltd.
- Masahiro SAKAI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGH EFFICIENCY ULTRAVIOLET LIGHT EMITTING DIODE WITH ELECTRON TUNN...
- Publication number 20200287084
- Publication date Sep 10, 2020
- Trustees of Boston University
- Yitao Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS
- Publication number 20200156946
- Publication date May 21, 2020
- Chien-Min Sung
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR SUBSTRATE, GALLIUM NITRIDE SINGLE CRYSTAL, AND METHOD...
- Publication number 20190271097
- Publication date Sep 5, 2019
- DEXERIALS CORPORATION
- Kazuhiro YAGIHASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GALLIUM NITRIDE STACKED BODY
- Publication number 20190218684
- Publication date Jul 18, 2019
- DEXERIALS CORPORATION
- Makoto WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
- Publication number 20190035627
- Publication date Jan 31, 2019
- HONG WU YES ENGINEERING TECHNOGOLOGY RESEARCH INSTITUTE CO., LTD.
- GUANGWU LI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR WAFER MADE OF MONOCRYSTALLINE SILICON, AND METHOD FOR...
- Publication number 20180371639
- Publication date Dec 27, 2018
- Siltronic AG
- Timo MUELLER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER
- Publication number 20180312992
- Publication date Nov 1, 2018
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
PASTE COMPOSITION AND METHOD FOR FORMING SILICON GERMANIUM LAYER
- Publication number 20180301334
- Publication date Oct 18, 2018
- TOYO ALUMINIUM KABUSHIKI KAISHA
- Marwan Dhamrin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-BASED MOLTEN COMPOSITION AND MANUFACTURING METHOD OF SIC SI...
- Publication number 20180245235
- Publication date Aug 30, 2018
- LG CHEM, LTD.
- Chan Yeup Chung
- C30 - CRYSTAL GROWTH
Information Patent Application
GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS
- Publication number 20180044185
- Publication date Feb 15, 2018
- Chien-Min Sung
- B82 - NANO-TECHNOLOGY
Information Patent Application
APPARATUS AND METHOD FOR PRODUCING GALLIUM OXIDE CRYSTAL
- Publication number 20170306521
- Publication date Oct 26, 2017
- Shinshu University
- Keigo HOSHIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...
- Publication number 20170081780
- Publication date Mar 23, 2017
- Toyoda Gosei Co., Ltd.
- Seiji NAGAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE C...
- Publication number 20170073839
- Publication date Mar 16, 2017
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL AND APPARATUS FOR P...
- Publication number 20170073840
- Publication date Mar 16, 2017
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
CHEMICAL SENSOR ARRAYS FOR ODOR DETECTION
- Publication number 20150364340
- Publication date Dec 17, 2015
- EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Masahiro UEDA
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF FABRICATING CRYSTALLINE ISLAND ON SUBSTRATE
- Publication number 20150357192
- Publication date Dec 10, 2015
- DIFTEK LASERS, INC.
- Douglas R. DYKAAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Etching a Group III Nitride Semiconductor, Method for Pr...
- Publication number 20140363954
- Publication date Dec 11, 2014
- Shohei Kumegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING THE GROWTH OF A SEMICONDUCTOR MATERIAL
- Publication number 20140360427
- Publication date Dec 11, 2014
- Sylvain Paltrier
- C30 - CRYSTAL GROWTH
Information Patent Application
Wide Band Gap Semiconductor Wafers Grown and processed in a Microgr...
- Publication number 20140353682
- Publication date Dec 4, 2014
- MASTERSON INDUSTRIES, LLC
- William F. Seng
- C30 - CRYSTAL GROWTH
Information Patent Application
PRINTABLE INKS WITH SILICON/GERMANIUM BASED NANOPARTICLES WITH HIGH...
- Publication number 20140346436
- Publication date Nov 27, 2014
- NanoGram Corporation
- Weidong Li
- B82 - NANO-TECHNOLOGY
Information Patent Application
GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS
- Publication number 20140338962
- Publication date Nov 20, 2014
- Chien-Min Sung
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE C...
- Publication number 20140328742
- Publication date Nov 6, 2014
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND SEMICONDUCTOR WAFER
- Publication number 20140319539
- Publication date Oct 30, 2014
- TOYO TANSO CO., LTD
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Producing Crystals of Nitrides of Group 13 Elements and M...
- Publication number 20140305369
- Publication date Oct 16, 2014
- NGK Insulators, Ltd.
- Masahiro Sakai
- C30 - CRYSTAL GROWTH

using melted materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for producing a single crystal from semiconductor material b...

Formation of single crystal semiconductors using planar vapor liqui...

High efficiency ultraviolet light emitting diode with electron tunn...

Liquid phase epitaxy of III-V materials and alloys

Formation of single crystal semiconductors using planar vapor liqui...

Melt-growth of single-crystal alloy semiconductor structures and se...

Semiconductor substrate, gallium nitride single crystal, and method...

Paste composition and method for forming silicon germanium layer

Semiconductor wafer made of monocrystalline silicon, and method for...

Free-standing substrate comprising polycrystalline group 13 element...

Free-standing substrate comprising polycrystalline group 13 element...

Method and device for manufacturing semiconductor substrate

One-step growth of a dense, photoresponsive silicon film in molten...

Silicon-based molten composition and manufacturing method of SiC si...

Apparatus and method for producing gallium oxide crystal

High efficiency ultraviolet light emitting diode with band structur...

Method for manufacturing semiconductor wafer

Method for producing Group III nitride semiconductor including grow...

Method for manufacturing group-III nitride semiconductor crystal su...

Co-deposition of black silicon

Method for producing group-III nitride crystal, group-III nitride c...

Method for manufacturing nitride crystal substrate and substrate fo...

Process for producing group III nitride crystal and apparatus for p...

Method for producing SiC single crystal

Method for producing group III nitride crystal, group III nitride c...

Semiconductor formation by lateral diffusion liquid phase epitaxy

Methods of growing heteroepitaxial single crystal or large grained...

Method for producing the growth of a semiconductor material

High efficiency ultraviolet light emitting diode with band structur...

Method and device for fabricating a layer in semiconductor material

Patents Applicationslast 30 patents

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

MANUFACTURING METHOD OF RF COMPONENTS

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

METHOD FOR PRODUCING A SINGLE CRYSTAL FROM SEMICONDUCTOR MATERIAL B...

LIQUID PHASE EPITAXY OF III-V MATERIALS AND ALLOYS

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE, FUNCTIONAL...

HIGH EFFICIENCY ULTRAVIOLET LIGHT EMITTING DIODE WITH ELECTRON TUNN...

GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS

SEMICONDUCTOR SUBSTRATE, GALLIUM NITRIDE SINGLE CRYSTAL, AND METHOD...

METHOD FOR PRODUCING GALLIUM NITRIDE STACKED BODY

METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

SEMICONDUCTOR WAFER MADE OF MONOCRYSTALLINE SILICON, AND METHOD FOR...

METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER

PASTE COMPOSITION AND METHOD FOR FORMING SILICON GERMANIUM LAYER

SILICON-BASED MOLTEN COMPOSITION AND MANUFACTURING METHOD OF SIC SI...

GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS

APPARATUS AND METHOD FOR PRODUCING GALLIUM OXIDE CRYSTAL

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...

METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE C...

PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL AND APPARATUS FOR P...

CHEMICAL SENSOR ARRAYS FOR ODOR DETECTION

METHOD OF FABRICATING CRYSTALLINE ISLAND ON SUBSTRATE

Method for Etching a Group III Nitride Semiconductor, Method for Pr...

METHOD FOR PRODUCING THE GROWTH OF A SEMICONDUCTOR MATERIAL

Wide Band Gap Semiconductor Wafers Grown and processed in a Microgr...

PRINTABLE INKS WITH SILICON/GERMANIUM BASED NANOPARTICLES WITH HIGH...

GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE C...

SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND SEMICONDUCTOR WAFER

Method of Producing Crystals of Nitrides of Group 13 Elements and M...