using MOS with ferroelectric gate insulating film

Industry

CPC
G11C11/223

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/223using MOS with ferroelectric gate insulating film

Industries

Patents Grantslast 30 patents

Information Patent Grant
Threshold voltage-programmable field effect transistor-based memory...
- Patent number 11,990,171
- Issue date May 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and method
- Patent number 11,985,830
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Cheng Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Capacitor, method of controlling the same, and transistor including...
- Patent number 11,980,023
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Jaeho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,973,119
- Issue date Apr 30, 2024
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and multiply-accumulate operation device
- Patent number 11,972,229
- Issue date Apr 30, 2024
- Sony Group Corporation
- Toshiyuki Kobayashi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Back-end active device, semiconductor device and semiconductor chip
- Patent number 11,963,365
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Grant
Physically unclonable function apparatus based on ferroelectric ele...
- Patent number 11,955,157
- Issue date Apr 9, 2024
- Industry-Academic Corporation Foundation, Yonsei University
- Seong Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays, ferroelectric transistors, and methods of reading an...
- Patent number 11,955,156
- Issue date Apr 9, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and write method
- Patent number 11,942,134
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huan-Sheng Wei
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having volatile and non-volatile memory cells
- Patent number 11,922,984
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Minhee Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory operation bias and power domains
- Patent number 11,915,736
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Front end buffer having ferroelectric field effect transistor (FeFE...
- Patent number 11,908,504
- Issue date Feb 20, 2024
- Seagate Technology LLC
- Jon D. Trantham
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric FET-based content addressable memory
- Patent number 11,908,505
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Lien Linus Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 11,903,215
- Issue date Feb 13, 2024
- Kioxia Corporation
- Kunifumi Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Double-gated ferroelectric field-effect transistor
- Patent number 11,895,846
- Issue date Feb 6, 2024
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional semiconductor memory device, operating method of...
- Patent number 11,882,705
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Yun Heub Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric field-effect transistor (FeFET) memory
- Patent number 11,881,242
- Issue date Jan 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Embedded ferroelectric memory cell
- Patent number 11,869,564
- Issue date Jan 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for implementing adaptive stochastic spiking neuron based on...
- Patent number 11,868,868
- Issue date Jan 9, 2024
- Peking University
- Ru Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-bit memory storage device
- Patent number 11,869,971
- Issue date Jan 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell and method of operating the same
- Patent number 11,862,219
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and method
- Patent number 11,856,782
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Yu Ling
- G11 - INFORMATION STORAGE
Information Patent Grant
Grid structure to reduce domain size in ferroelectric memory device
- Patent number 11,856,780
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Analog non-volatile memory device using poly ferroelectric film wit...
- Patent number 11,856,784
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,849,588
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fu-Chen Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of operating multi-bit memory storage device
- Patent number 11,848,381
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
3-dimensional memory string array of thin-film ferroelectric transi...
- Patent number 11,839,086
- Issue date Dec 5, 2023
- SUNRISE MEMORY CORPORATION
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Grant
Sidewall spacer structure to increase switching performance of ferr...
- Patent number 11,837,661
- Issue date Dec 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory with FRAM and SRAM of IC
- Patent number 11,830,550
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Embedded ferroelectric FinFET memory device
- Patent number 11,832,450
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS
- Publication number 20240161803
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine H. CHIANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240145552
- Publication date May 2, 2024
- RENESAS ELECTRONICS CORPORATION
- Tadashi YAMAGUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WI...
- Publication number 20240114691
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS
- Publication number 20240114692
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL AND METHOD OF OPERATING THE SAME
- Publication number 20240096388
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng YOUNG
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE
- Publication number 20240097032
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han LIN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY AND OPERATION METHOD THEREOF
- Publication number 20240090230
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Ling Lu
- G11 - INFORMATION STORAGE
Information Patent Application
GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE
- Publication number 20240090229
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY
- Publication number 20240071453
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240074206
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fu-Chen CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED FERROELECTRIC MEMORY CELL
- Publication number 20240071455
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRIC CIRCUIT ASSEMBLY COMPRISING A FERROELECTRIC FIELD EFFECT T...
- Publication number 20240055036
- Publication date Feb 15, 2024
- Fraunhofer Gesellschaft zur Forderung der angewandten Forschung e.V.
- Thomas Kampfe
- G11 - INFORMATION STORAGE
Information Patent Application
SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERR...
- Publication number 20240055519
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH FRAM AND SRAM OF IC
- Publication number 20240055049
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Jong CHIA
- G11 - INFORMATION STORAGE
Information Patent Application
DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240038890
- Publication date Feb 1, 2024
- Samsung Electronics Co., Ltd.
- Jinseong HEO
- G11 - INFORMATION STORAGE
Information Patent Application
MFMFET, MFMFET ARRAY, AND THE OPERATING METHOD THEREOF
- Publication number 20240038287
- Publication date Feb 1, 2024
- National Yang Ming Chiao Tung University
- Tuo-Hung HOU
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TR...
- Publication number 20240040798
- Publication date Feb 1, 2024
- Sunrise Memory Corporation
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Application
COMPUTATION APPARATUS IN MEMORY CAPABLE OF COMPUTATION OF SIGNED WE...
- Publication number 20240036827
- Publication date Feb 1, 2024
- UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY
- Seong Ook JUNG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND SYSTEM INCLUDING THE SAME
- Publication number 20240015977
- Publication date Jan 11, 2024
- Samsung Electronics Co., Ltd.
- Min Jun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOR-TYPE MEMORY DEVICE, METHOD OF MANUFACTURING NOR-TYPE MEMORY DEV...
- Publication number 20240008283
- Publication date Jan 4, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20230413571
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Ling LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY INCLUDING NEGATIVE CAPACITANCE BLOCKING OXIDE L...
- Publication number 20230413574
- Publication date Dec 21, 2023
- Korea Advanced Institute of Science and Technology
- Sanghun JEON
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR AND SEMICONDUCTOR DEVICE
- Publication number 20230411521
- Publication date Dec 21, 2023
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Yuki ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Vertically-Alternating Tiers of Insulative...
- Publication number 20230403867
- Publication date Dec 14, 2023
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE
- Publication number 20230403860
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Application
Field Effect Transistor Constructions and Methods of Programming Fi...
- Publication number 20230402082
- Publication date Dec 14, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Assemblies and Methods of Forming Ferroelectric Assem...
- Publication number 20230395690
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Albert Liao
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
- Publication number 20230386544
- Publication date Nov 30, 2023
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Hiromichi GODO
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD
- Publication number 20230389326
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Yu Ling
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20230371267
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- G11 - INFORMATION STORAGE

using MOS with ferroelectric gate insulating film

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Threshold voltage-programmable field effect transistor-based memory...

Three-dimensional memory device and method

Capacitor, method of controlling the same, and transistor including...

Semiconductor device and method of manufacturing the same

Semiconductor device and multiply-accumulate operation device

Back-end active device, semiconductor device and semiconductor chip

Physically unclonable function apparatus based on ferroelectric ele...

Memory arrays, ferroelectric transistors, and methods of reading an...

Memory circuit and write method

Memory device having volatile and non-volatile memory cells

Ferroelectric memory operation bias and power domains

Front end buffer having ferroelectric field effect transistor (FeFE...

Ferroelectric FET-based content addressable memory

Semiconductor memory device

Double-gated ferroelectric field-effect transistor

Three-dimensional semiconductor memory device, operating method of...

Ferroelectric field-effect transistor (FeFET) memory

Embedded ferroelectric memory cell

Method for implementing adaptive stochastic spiking neuron based on...

Multi-bit memory storage device

Memory cell and method of operating the same

Three-dimensional memory device and method

Grid structure to reduce domain size in ferroelectric memory device

Analog non-volatile memory device using poly ferroelectric film wit...

Semiconductor device and method of forming the same

Methods of operating multi-bit memory storage device

3-dimensional memory string array of thin-film ferroelectric transi...

Sidewall spacer structure to increase switching performance of ferr...

Memory with FRAM and SRAM of IC

Embedded ferroelectric FinFET memory device

Patents Applicationslast 30 patents

FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WI...

INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS

MEMORY CELL AND METHOD OF OPERATING THE SAME

METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE

MEMORY ARRAY AND OPERATION METHOD THEREOF

GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE

FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

EMBEDDED FERROELECTRIC MEMORY CELL

ELECTRIC CIRCUIT ASSEMBLY COMPRISING A FERROELECTRIC FIELD EFFECT T...

SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERR...

MEMORY WITH FRAM AND SRAM OF IC

DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME

MFMFET, MFMFET ARRAY, AND THE OPERATING METHOD THEREOF

THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TR...

COMPUTATION APPARATUS IN MEMORY CAPABLE OF COMPUTATION OF SIGNED WE...

NON-VOLATILE MEMORY DEVICE AND SYSTEM INCLUDING THE SAME

NOR-TYPE MEMORY DEVICE, METHOD OF MANUFACTURING NOR-TYPE MEMORY DEV...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

NON-VOLATILE MEMORY INCLUDING NEGATIVE CAPACITANCE BLOCKING OXIDE L...

TRANSISTOR AND SEMICONDUCTOR DEVICE

Memory Arrays Comprising Vertically-Alternating Tiers of Insulative...

EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE

Field Effect Transistor Constructions and Methods of Programming Fi...

Ferroelectric Assemblies and Methods of Forming Ferroelectric Assem...

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD

SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME