using MOS with ferroelectric gate insulating film

Industry

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G11C11/223

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/223using MOS with ferroelectric gate insulating film

Industries

Patents Grantslast 30 patents

Information Patent Grant
Domain switching devices and methods of manufacturing the same
- Patent number 12,224,346
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays, ferroelectric transistors, and methods of reading an...
- Patent number 12,223,994
- Issue date Feb 11, 2025
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array source/drain electrode structures
- Patent number 12,219,777
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Chang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reading and writing memory cells in three-dimensional FeRAM
- Patent number 12,211,537
- Issue date Jan 28, 2025
- Yangtze Memory Technologies Co., Ltd.
- Qiang Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and electronic device
- Patent number 12,205,625
- Issue date Jan 21, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Hiromichi Godo
- G11 - INFORMATION STORAGE
Information Patent Grant
Threshold voltage-programmable field effect transistor-based memory...
- Patent number 12,190,930
- Issue date Jan 7, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of manufacturing three-dimensional memory devices with cond...
- Patent number 12,171,102
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- G11 - INFORMATION STORAGE
Information Patent Grant
FeRAM MFM structure with selective electrode etch
- Patent number 12,167,611
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hsiang Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with FRAM and SRAM of IC
- Patent number 12,165,707
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including memory cells and method for manufact...
- Patent number 12,165,729
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor device and associated memory...
- Patent number 12,166,089
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,166,123
- Issue date Dec 10, 2024
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method, unit and circuit for implementing Boolean logic based on co...
- Patent number 12,166,481
- Issue date Dec 10, 2024
- ZHEJIANG LAB
- Jiani Gu
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory string array of thin-film ferroelectric tr...
- Patent number 12,160,996
- Issue date Dec 3, 2024
- SUNRISE MEMORY CORPORATION
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Grant
Embedded ferroelectric FinFET memory device
- Patent number 12,150,311
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays comprising vertically-alternating tiers of insulative...
- Patent number 12,150,318
- Issue date Nov 19, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Neural network operation device
- Patent number 12,124,945
- Issue date Oct 22, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structure and method of fabricating the same
- Patent number 12,114,506
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory bit-cell with stacked and folded planar capacitors
- Patent number 12,108,609
- Issue date Oct 1, 2024
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of forming the same
- Patent number 12,089,414
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device and method of manufacturing the same
- Patent number 12,089,416
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Compute-in-memory device and method
- Patent number 12,063,786
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chieh Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array gate structures
- Patent number 12,051,750
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array and operation method thereof
- Patent number 12,048,164
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Ling Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array including dummy regions
- Patent number 12,040,006
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with ferroelectric charge trapping layer
- Patent number 12,041,782
- Issue date Jul 16, 2024
- Imec VZW
- Jan Van Houdt
- G11 - INFORMATION STORAGE
Information Patent Grant
FeFET unit cells for neuromorphic computing
- Patent number 12,026,605
- Issue date Jul 2, 2024
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Using split word lines and switches for reducing capacitive loading...
- Patent number 12,002,499
- Issue date Jun 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell with multiple ferroelectric memory element...
- Patent number 11,996,144
- Issue date May 28, 2024
- Seagate Technology LLC
- Jon D. Trantham
- G11 - INFORMATION STORAGE
Information Patent Grant
Threshold voltage-programmable field effect transistor-based memory...
- Patent number 11,990,171
- Issue date May 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS
- Publication number 20250063736
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...
- Publication number 20250063793
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- NUO XU
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MEMORY CELLS AND METHOD FOR MANUFACT...
- Publication number 20250054522
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li CHIANG
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Arrays Comprising Vertically-Alternating Tiers of Insulative...
- Publication number 20250046358
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH
- Publication number 20250048647
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME, AND OPER...
- Publication number 20250029647
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Siyeon Cho
- G11 - INFORMATION STORAGE
Information Patent Application
SYNAPSE DEVICE INCLUDING FERROELECTRIC FIELD EFFECT TRANSISTOR AND...
- Publication number 20240428838
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- Sijung YOO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE
- Publication number 20240389345
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240389332
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array Isolation Structures
- Publication number 20240379778
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Chang Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Array Channel Regions
- Publication number 20240379847
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Chang Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS
- Publication number 20240381652
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING SEMICONDUCTO...
- Publication number 20240363176
- Publication date Oct 31, 2024
- KIOXIA Corporation
- Viktoria Diana SCHLYKOW
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20240365554
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Application
COMPUTE-IN-MEMORY DEVICE AND METHOD
- Publication number 20240365556
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Array Including Dummy Regions
- Publication number 20240331754
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD
- Publication number 20240284679
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Cheng Yang
- G11 - INFORMATION STORAGE
Information Patent Application
USING SPLIT WORD LINES AND SWITCHES FOR REDUCING CAPACITIVE LOADING...
- Publication number 20240274179
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-chen Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...
- Publication number 20240265960
- Publication date Aug 8, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY
- Publication number 20240242750
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Lien Linus LU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND WRITE METHOD
- Publication number 20240233795
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Sheng WEI
- G11 - INFORMATION STORAGE
Information Patent Application
BACK-END ACTIVE DEVICE AND LOGIC GATE
- Publication number 20240224538
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Application
THRESHOLD VOLTAGE-PROGRAMMABLE FIELD EFFECT TRANSISTOR-BASED MEMORY...
- Publication number 20240221810
- Publication date Jul 4, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND ITS OPERATING METHOD
- Publication number 20240206187
- Publication date Jun 20, 2024
- Industry-University Cooperation Foundation Hanyang University ERICA Campus
- Younghyun Kim
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MAPPING AN INPUT VECTOR TO AN OUTPUT VECTOR BY MEANS OF...
- Publication number 20240193228
- Publication date Jun 13, 2024
- ROBERT BOSCH GmbH
- Tobias Kirchner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FERROELECTRIC FIELD EFFECT TRANSISTORS BASED APPROACH FOR EUCLIDEAN...
- Publication number 20240194237
- Publication date Jun 13, 2024
- Universty of Cincinnati
- Siddharth Barve
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS
- Publication number 20240161803
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine H. CHIANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240145552
- Publication date May 2, 2024
- RENESAS ELECTRONICS CORPORATION
- Tadashi YAMAGUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WI...
- Publication number 20240114691
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS
- Publication number 20240114692
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE

using MOS with ferroelectric gate insulating film

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Domain switching devices and methods of manufacturing the same

Memory arrays, ferroelectric transistors, and methods of reading an...

Memory array source/drain electrode structures

Method for reading and writing memory cells in three-dimensional FeRAM

Semiconductor device and electronic device

Threshold voltage-programmable field effect transistor-based memory...

Methods of manufacturing three-dimensional memory devices with cond...

FeRAM MFM structure with selective electrode etch

Memory with FRAM and SRAM of IC

Semiconductor device including memory cells and method for manufact...

Method of manufacturing semiconductor device and associated memory...

Semiconductor device

Method, unit and circuit for implementing Boolean logic based on co...

Three-dimensional memory string array of thin-film ferroelectric tr...

Embedded ferroelectric FinFET memory device

Memory arrays comprising vertically-alternating tiers of insulative...

Neural network operation device

Semiconductor structure and method of fabricating the same

Memory bit-cell with stacked and folded planar capacitors

Memory device and method of forming the same

Electronic device and method of manufacturing the same

Compute-in-memory device and method

Memory array gate structures

Memory array and operation method thereof

Memory array including dummy regions

Memory device with ferroelectric charge trapping layer

FeFET unit cells for neuromorphic computing

Using split word lines and switches for reducing capacitive loading...

Non-volatile memory cell with multiple ferroelectric memory element...

Threshold voltage-programmable field effect transistor-based memory...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...

SEMICONDUCTOR DEVICE INCLUDING MEMORY CELLS AND METHOD FOR MANUFACT...

Memory Arrays Comprising Vertically-Alternating Tiers of Insulative...

FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH

NONVOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME, AND OPER...

SYNAPSE DEVICE INCLUDING FERROELECTRIC FIELD EFFECT TRANSISTOR AND...

EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE

SEMICONDUCTOR STRUCTURE

Memory Array Isolation Structures

Memory Array Channel Regions

THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING SEMICONDUCTO...

MEMORY DEVICE

COMPUTE-IN-MEMORY DEVICE AND METHOD

Memory Array Including Dummy Regions

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD

USING SPLIT WORD LINES AND SWITCHES FOR REDUCING CAPACITIVE LOADING...

Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...

FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY

MEMORY CIRCUIT AND WRITE METHOD

BACK-END ACTIVE DEVICE AND LOGIC GATE

THRESHOLD VOLTAGE-PROGRAMMABLE FIELD EFFECT TRANSISTOR-BASED MEMORY...

NON-VOLATILE MEMORY DEVICE AND ITS OPERATING METHOD

METHOD FOR MAPPING AN INPUT VECTOR TO AN OUTPUT VECTOR BY MEANS OF...

FERROELECTRIC FIELD EFFECT TRANSISTORS BASED APPROACH FOR EUCLIDEAN...

FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WI...

INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS