using multiple magnetic layers

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G11C11/15

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/15using multiple magnetic layers

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Storage element and storage apparatus
- Patent number 12,170,104
- Issue date Dec 17, 2024
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and method to enhance efficiency of memory
- Patent number 12,167,613
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hung-Chang Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element including perpendicular enhancement layers...
- Patent number 12,133,471
- Issue date Oct 29, 2024
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multiply spin-coated ultra-thick hybrid hard mask for sub 60nm MRAM...
- Patent number 12,108,679
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device including reference cell to compensate for...
- Patent number RE50133
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Artur Antonyan
Information Patent Grant
Ultralow power inference engine with external magnetic field progra...
- Patent number 12,093,812
- Issue date Sep 17, 2024
- SanDisk Technologies LLC
- Michael Grobis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
AI accelerator with MRAM, PCM, and recessed PCM bottom electrode
- Patent number 12,075,627
- Issue date Aug 27, 2024
- International Business Machines Corporation
- Ruilong Xie
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a magnetoresistive random access memory (MRAM)
- Patent number 11,968,909
- Issue date Apr 23, 2024
- Godo Kaisha IP Bridge 1
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Thickener systems for oral care compositions and a method for prepa...
- Patent number 11,910,724
- Issue date Feb 20, 2024
- ISP Investments LLC
- Philip John Oths
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical spin orbit torque devices
- Patent number RE49797
- Issue date Jan 9, 2024
- Samsung Electronics Co., Ltd.
- Vladimir Nikitin
Information Patent Grant
Asynchronous read circuit using delay sensing in magnetoresistive r...
- Patent number 11,798,607
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jack Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic domain wall displacement element, magnetic recording array...
- Patent number 11,790,967
- Issue date Oct 17, 2023
- TDK Corporation
- Shogo Yamada
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and method to enhance efficiency of memory
- Patent number 11,793,000
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hung-Chang Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
- Patent number 11,776,605
- Issue date Oct 3, 2023
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for atomic persistence in storage class memory
- Patent number 11,756,618
- Issue date Sep 12, 2023
- Ellis Robinson Giles
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic memory element incorporating dual perpendicular enhancemen...
- Patent number 11,758,822
- Issue date Sep 12, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Differential amplifier schemes for sensing memory cells
- Patent number 11,735,234
- Issue date Aug 22, 2023
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a magnetoresistive random access memory (MRAM)
- Patent number 11,737,372
- Issue date Aug 22, 2023
- Godo Kaisha IP Bridge 1
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide interface displaying electronically controllable ferromagnetism
- Patent number 11,688,539
- Issue date Jun 27, 2023
- University of Pittsburgh of the Commonwealth System of Higher Education
- Jeremy Levy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device
- Patent number 11,676,751
- Issue date Jun 13, 2023
- TDK Corporation
- Zhenyao Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory
- Patent number 11,672,181
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huang-Wen Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for resistive RAM (ReRAM) performance stabilization via dry...
- Patent number 11,637,242
- Issue date Apr 25, 2023
- Tokyo Electron Limited
- Sergey Voronin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element, magnetic memory device, and writing and r...
- Patent number 11,610,614
- Issue date Mar 21, 2023
- TOHOKU UNIVERSITY
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
- Patent number 11,475,932
- Issue date Oct 18, 2022
- Sony Group Corporation
- Yutaka Higo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element incorporating dual perpendicular enhancemen...
- Patent number 11,417,836
- Issue date Aug 16, 2022
- Avalanche Technology, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon oxynitride based encapsulation layer for magnetic tunnel ju...
- Patent number 11,411,174
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High density 3D magnetic random access memory (MRAM) cell integrati...
- Patent number 11,342,498
- Issue date May 24, 2022
- Integrated Silicon Solution (Cayman) Inc.
- Marcin Gajek
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiply spin-coated ultra-thick hybrid hard mask for sub 60nm MRAM...
- Patent number 11,329,218
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device based on multi-bit perpendicular magnetic tunnel junc...
- Patent number 11,296,276
- Issue date Apr 5, 2022
- Industry-University Cooperation Foundation Hanyang University
- Jea Gun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 11,264,565
- Issue date Mar 1, 2022
- Tohoku University
- Hiroaki Honjo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20240389354
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20240389355
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)
- Publication number 20240284804
- Publication date Aug 22, 2024
- GODO KAISHA IP BRIDGE 1
- Shinji YUASA
- B82 - NANO-TECHNOLOGY
Information Patent Application
STORAGE ELEMENT AND STORAGE APPARATUS
- Publication number 20240005975
- Publication date Jan 4, 2024
- SONY GROUP CORPORATION
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)
- Publication number 20230413685
- Publication date Dec 21, 2023
- Godo Kaisha IP Bridge 1
- Shinji YUASA
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic Memory Element Including Perpendicular Enhancement Layers...
- Publication number 20230403945
- Publication date Dec 14, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM
- Publication number 20230395112
- Publication date Dec 7, 2023
- Northwestern University
- Matthew A. Grayson
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20230380184
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20230380185
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYNCHRONOUS READ CIRCUIT USING DELAY SENSING IN MAGNETORESISTIVE R...
- Publication number 20230368829
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jack Liu
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)
- Publication number 20230363288
- Publication date Nov 9, 2023
- GODO KAISHA IP BRIDGE 1
- Shinji YUASA
- B82 - NANO-TECHNOLOGY
Information Patent Application
AI ACCELERATOR WITH INTEGRATED PCM AND MRAM
- Publication number 20230066107
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-Power Fast-Response Machine Learning Variable Image Compression
- Publication number 20220414942
- Publication date Dec 29, 2022
- Western Digital Technologies, Inc.
- Quang Le
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SILICON OXYNITRIDE BASED ENCAPSULATION LAYER FOR MAGNETIC TUNNEL JU...
- Publication number 20220384718
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...
- Publication number 20220376172
- Publication date Nov 24, 2022
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
STORAGE ELEMENT AND STORAGE APPARATUS
- Publication number 20220328084
- Publication date Oct 13, 2022
- SONY GROUP CORPORATION
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Application
FERRIMAGNETIC HEUSLER COMPOUNDS WITH HIGH SPIN POLARIZATION
- Publication number 20220262555
- Publication date Aug 18, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiply Spin-Coated Ultra-Thick Hybrid Hard Mask for Sub 60nm MRAM...
- Publication number 20220263018
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPERATING METHOD OF PHYSICALLY UNCLONABLE FUNCTION MAGNETIC MEMORY...
- Publication number 20220231867
- Publication date Jul 21, 2022
- KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION(
- Kyung Jin LEE
- G11 - INFORMATION STORAGE
Information Patent Application
DIFFERENTIAL AMPLIFIER SCHEMES FOR SENSING MEMORY CELLS
- Publication number 20220189514
- Publication date Jun 16, 2022
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)
- Publication number 20220115588
- Publication date Apr 14, 2022
- Japan Science and Technology Agency
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Application
ULTRALOW POWER INFERENCE ENGINE WITH EXTERNAL MAGNETIC FIELD PROGRA...
- Publication number 20220108158
- Publication date Apr 7, 2022
- SANDISK TECHNOLOGIES LLC
- Michael Grobis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
OXIDE INTERFACE DISPLAYING ELECTRONICALLY CONTROLLABLE FERROMAGNETISM
- Publication number 20220084731
- Publication date Mar 17, 2022
- University of Pittsburgh of the Commonwealth System of Higher Education
- Jeremy LEVY
- G11 - INFORMATION STORAGE
Information Patent Application
ASYNCHRONOUS READ CIRCUIT USING DELAY SENSING IN MAGNETORESISTIVE R...
- Publication number 20220068342
- Publication date Mar 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jack Liu
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR RESISTIVE RAM (ReRAM) PERFORMANCE STABILIZATION VIA DRY...
- Publication number 20220059765
- Publication date Feb 24, 2022
- TOKYO ELECTRON LIMITED
- Sergey Voronin
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20210202575
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A MAGNETIC RANDOM ACCESS MEMORY STORAGE ELEMENT AND MAGNETIC RANDOM...
- Publication number 20210193735
- Publication date Jun 24, 2021
- Shanghai CiYu Information Technologies Co., LTD
- YIMIN GUO
- G11 - INFORMATION STORAGE
Information Patent Application
DIFFERENTIAL AMPLIFIER SCHEMES FOR SENSING MEMORY CELLS
- Publication number 20210166736
- Publication date Jun 3, 2021
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY DEVICE, AND WRITING AND R...
- Publication number 20210158849
- Publication date May 27, 2021
- Tohoku University
- Yoshiaki Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...
- Publication number 20210159399
- Publication date May 27, 2021
- Avalanche Technology, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY

using multiple magnetic layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Storage element and storage apparatus

Circuit and method to enhance efficiency of memory

Magnetic memory element including perpendicular enhancement layers...

Multiply spin-coated ultra-thick hybrid hard mask for sub 60nm MRAM...

Resistive memory device including reference cell to compensate for...

Ultralow power inference engine with external magnetic field progra...

AI accelerator with MRAM, PCM, and recessed PCM bottom electrode

Method of manufacturing a magnetoresistive random access memory (MRAM)

Thickener systems for oral care compositions and a method for prepa...

Vertical spin orbit torque devices

Asynchronous read circuit using delay sensing in magnetoresistive r...

Magnetic domain wall displacement element, magnetic recording array...

Circuit and method to enhance efficiency of memory

Storage element and storage apparatus

System and method for atomic persistence in storage class memory

Magnetic memory element incorporating dual perpendicular enhancemen...

Differential amplifier schemes for sensing memory cells

Method of manufacturing a magnetoresistive random access memory (MRAM)

Oxide interface displaying electronically controllable ferromagnetism

Magnetic device

Magnetic random access memory

Methods for resistive RAM (ReRAM) performance stabilization via dry...

Magnetoresistive element, magnetic memory device, and writing and r...

Storage element and storage apparatus

Magnetic memory element incorporating dual perpendicular enhancemen...

Silicon oxynitride based encapsulation layer for magnetic tunnel ju...

High density 3D magnetic random access memory (MRAM) cell integrati...

Multiply spin-coated ultra-thick hybrid hard mask for sub 60nm MRAM...

Memory device based on multi-bit perpendicular magnetic tunnel junc...

Magnetoresistance effect element and magnetic memory

Patents Applicationslast 30 patents

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)

STORAGE ELEMENT AND STORAGE APPARATUS

METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)

Magnetic Memory Element Including Perpendicular Enhancement Layers...

ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

ASYNCHRONOUS READ CIRCUIT USING DELAY SENSING IN MAGNETORESISTIVE R...

METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)

AI ACCELERATOR WITH INTEGRATED PCM AND MRAM

Low-Power Fast-Response Machine Learning Variable Image Compression

SILICON OXYNITRIDE BASED ENCAPSULATION LAYER FOR MAGNETIC TUNNEL JU...

Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...

STORAGE ELEMENT AND STORAGE APPARATUS

FERRIMAGNETIC HEUSLER COMPOUNDS WITH HIGH SPIN POLARIZATION

Multiply Spin-Coated Ultra-Thick Hybrid Hard Mask for Sub 60nm MRAM...

OPERATING METHOD OF PHYSICALLY UNCLONABLE FUNCTION MAGNETIC MEMORY...

DIFFERENTIAL AMPLIFIER SCHEMES FOR SENSING MEMORY CELLS

METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)

ULTRALOW POWER INFERENCE ENGINE WITH EXTERNAL MAGNETIC FIELD PROGRA...

OXIDE INTERFACE DISPLAYING ELECTRONICALLY CONTROLLABLE FERROMAGNETISM

ASYNCHRONOUS READ CIRCUIT USING DELAY SENSING IN MAGNETORESISTIVE R...

METHODS FOR RESISTIVE RAM (ReRAM) PERFORMANCE STABILIZATION VIA DRY...

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

A MAGNETIC RANDOM ACCESS MEMORY STORAGE ELEMENT AND MAGNETIC RANDOM...

DIFFERENTIAL AMPLIFIER SCHEMES FOR SENSING MEMORY CELLS

MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY DEVICE, AND WRITING AND R...

Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...