using natural radiation

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H01L21/2605

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/2605using natural radiation

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device in which a lifetime...
- Patent number 10,847,609
- Issue date Nov 24, 2020
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 10,546,919
- Issue date Jan 28, 2020
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing crystal originated particles from a crystalline...
- Patent number 10,217,638
- Issue date Feb 26, 2019
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing crystal originated particles from a crystalline...
- Patent number 9,679,774
- Issue date Jun 13, 2017
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increasing the doping efficiency during proton irradiation
- Patent number 9,536,740
- Issue date Jan 3, 2017
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depositing material into high aspect ratio structures
- Patent number 9,384,982
- Issue date Jul 5, 2016
- FEI Company
- Sang Hoon Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Processing a wafer for an electronic circuit
- Patent number 9,293,329
- Issue date Mar 22, 2016
- Isis Innovation Limited
- Peter Wilshaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 8,927,347
- Issue date Jan 6, 2015
- Rohm Co., Ltd.
- Toshio Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,766,325
- Issue date Jul 1, 2014
- Rohm Co., Ltd.
- Toshio Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of silicon wafer
- Patent number 7,563,319
- Issue date Jul 21, 2009
- Sumitomo Mitsubishi Silicon Corporation
- Shigeru Umeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for suppression of latchup in integrated circuits (ICS)
- Patent number 6,878,595
- Issue date Apr 12, 2005
- Full Circle Research, Inc.
- James P Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor substrate, and semiconductor...
- Patent number 6,869,897
- Issue date Mar 22, 2005
- Sharp Kabushiki Kaisha
- Masahiro Takenaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and design for the suppression of single event upset failure...
- Patent number 6,335,562
- Issue date Jan 1, 2002
- The United States of America as represented by the Secretary of the Navy
- Harry B. Dietrich
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20200144360
- Publication date May 7, 2020
- Fuji Electric Co., Ltd.
- Yuichi ONOZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITING MATERIAL INTO HIGH ASPECT RATIO STRUCTURES
- Publication number 20150340235
- Publication date Nov 26, 2015
- FEI Company
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20150311279
- Publication date Oct 29, 2015
- Fuji Electric Co., Ltd.
- Yuichi ONOZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Removing Crystal Originated Particles from a Crystalline...
- Publication number 20150270130
- Publication date Sep 24, 2015
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING THE DOPING EFFICIENCY DURING PROTON IRRADIATION
- Publication number 20150235853
- Publication date Aug 20, 2015
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS INTERGRATION OF GROUP III-V OR II-VI MATERIALS WITH S...
- Publication number 20140299872
- Publication date Oct 9, 2014
- Isis Innovation Limited
- Peter Wilshaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING A WAFER FOR AN ELECTRONIC CIRCUIT
- Publication number 20140291815
- Publication date Oct 2, 2014
- Isis Innovation Limited
- Peter Wilshaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20140287559
- Publication date Sep 25, 2014
- Rohm Co., Ltd.
- Toshio Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20130134478
- Publication date May 30, 2013
- Rohm Co., Ltd.
- Toshio Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
- Publication number 20110233731
- Publication date Sep 29, 2011
- Toyota Jidosha Kabushiki Kaisha
- Shinya Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of silicon wafer
- Publication number 20050229842
- Publication date Oct 20, 2005
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
TECHNIQUE FOR SUPPRESSION OF LATCHUP IN INTEGRATED CIRCUITS (ICS)
- Publication number 20040147080
- Publication date Jul 29, 2004
- Full Circle Research, Inc.
- James P. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method for semiconductor substrate, semiconductor sub...
- Publication number 20040075106
- Publication date Apr 22, 2004
- Sharp Kabushiki Kaisha
- Masahiro Takenaka
- H01 - BASIC ELECTRIC ELEMENTS

using natural radiation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device in which a lifetime...

Semiconductor device and semiconductor device manufacturing method

Method for removing crystal originated particles from a crystalline...

Method for removing crystal originated particles from a crystalline...

Increasing the doping efficiency during proton irradiation

Depositing material into high aspect ratio structures

Processing a wafer for an electronic circuit

Method for manufacturing semiconductor device

Semiconductor device

Manufacturing method of silicon wafer

Technique for suppression of latchup in integrated circuits (ICS)

Manufacturing method for semiconductor substrate, and semiconductor...

Method and design for the suppression of single event upset failure...

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

DEPOSITING MATERIAL INTO HIGH ASPECT RATIO STRUCTURES

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Method for Removing Crystal Originated Particles from a Crystalline...

INCREASING THE DOPING EFFICIENCY DURING PROTON IRRADIATION

HETEROGENEOUS INTERGRATION OF GROUP III-V OR II-VI MATERIALS WITH S...

PROCESSING A WAFER FOR AN ELECTRONIC CIRCUIT

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME

Manufacturing method of silicon wafer

TECHNIQUE FOR SUPPRESSION OF LATCHUP IN INTEGRATED CIRCUITS (ICS)

Manufacturing method for semiconductor substrate, semiconductor sub...