using semiconductor devices

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GPHYSICS G11Information storage G11CSTATIC STORES G11C17/00Read-only memories programmable only once Semi-permanent stores

Current Industry

G11C17/08using semiconductor devices

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having voltage generator generating well poten...
- Patent number 11,838,014
- Issue date Dec 5, 2023
- Micron Technology, Inc.
- Keiichiro Minakuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory devices and systems with read-only memory featu...
- Patent number 11,769,561
- Issue date Sep 26, 2023
- Micron Technology, Inc.
- Timothy B. Cowles
- G11 - INFORMATION STORAGE
Information Patent Grant
Small-area side-capacitor read-only memory device, memory array and...
- Patent number 11,742,039
- Issue date Aug 29, 2023
- Yield Microelectronics Corp.
- Yu Ting Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Antifuse-type one time programming memory cell and cell array struc...
- Patent number 11,735,266
- Issue date Aug 22, 2023
- eMemory Technology Inc.
- Lun-Chun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable memory
- Patent number 11,651,826
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage device
- Patent number 11,600,347
- Issue date Mar 7, 2023
- Kabushiki Kaisha Toshiba
- Toshiaki Dozaka
- G11 - INFORMATION STORAGE
Information Patent Grant
OTP memory and method for making the same
- Patent number 11,545,498
- Issue date Jan 3, 2023
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Junwen Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device to suspend ROM operation and a method of operating th...
- Patent number 11,538,518
- Issue date Dec 27, 2022
- SK hynix Inc.
- Hyeon Su Nam
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Physically unclonable function circuit having lower gate-to-source/...
- Patent number 11,437,082
- Issue date Sep 6, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
One time programmable memory
- Patent number 11,276,469
- Issue date Mar 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for updating memory circuitry
- Patent number 11,037,647
- Issue date Jun 15, 2021
- Semiconductor Components Industries, LLC
- Sergi Cami Gonzalez
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device
- Patent number 10,971,237
- Issue date Apr 6, 2021
- Lapis Semiconductor Co., Ltd.
- Takashi Yamada
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
3D SRAM/ROM with several superimposed layers and reconfigurable by...
- Patent number 10,923,191
- Issue date Feb 16, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- David Coriat
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory devices and systems with read-only memory featu...
- Patent number 10,892,027
- Issue date Jan 12, 2021
- Micron Technology, Inc.
- Timothy B. Cowles
- G11 - INFORMATION STORAGE
Information Patent Grant
ROM chip manufacturing structures having shared gate electrodes
- Patent number 10,867,996
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having an electrostatic discharge protection fun...
- Patent number 10,706,901
- Issue date Jul 7, 2020
- Samsung Electronics Co., Ltd.
- Ki Ho Kong
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
ROM cell with transistor body bias control circuit
- Patent number 10,679,714
- Issue date Jun 9, 2020
- NXP B.V.
- Jainendra Singh
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus for high speed ROM cells
- Patent number 10,658,010
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit with leakage compensation
- Patent number 10,593,413
- Issue date Mar 17, 2020
- Texas Instruments Incorporated
- Stephen Keith Heinrich-Barna
- G11 - INFORMATION STORAGE
Information Patent Grant
Clock generating device, electronic circuit, integrated circuit and...
- Patent number 10,491,225
- Issue date Nov 26, 2019
- Rohm Co., Ltd.
- Isao Niwa
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory devices and systems with read-only memory featu...
- Patent number 10,446,248
- Issue date Oct 15, 2019
- Micron Technology, Inc.
- Timothy B. Cowles
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices including one-time programmable memory cells
- Patent number 10,355,004
- Issue date Jul 16, 2019
- Samsung Electronics Co., Ltd.
- Hyun-Min Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
ROM chip manufacturing structures having shared gate electrodes
- Patent number 10,325,909
- Issue date Jun 18, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Single circuit one-time programmable memory and volatile memory
- Patent number 10,297,334
- Issue date May 21, 2019
- Texas Instruments Incorporated
- Anindita Borah
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for threshold voltage modification and detection
- Patent number 10,269,441
- Issue date Apr 23, 2019
- Micron Technology, Inc.
- Daniel B. Penney
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Methods for fabricating semiconductor shielding structures
- Patent number 10,157,857
- Issue date Dec 18, 2018
- EVERSPIN TECHNOLOGIES, INC.
- De Jun Huang
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Systems and methods for threshold voltage modification and detection
- Patent number 10,127,994
- Issue date Nov 13, 2018
- Micron Technology, Inc.
- Daniel B. Penney
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor device and method for operating the same
- Patent number 10,109,362
- Issue date Oct 23, 2018
- SK Hynix Inc.
- Jeong-Tae Hwang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit with leakage compensation
- Patent number 10,062,443
- Issue date Aug 28, 2018
- Texas Instruments Incorporated
- Stephen Keith Heinrich-Barna
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time and multi-time programming using a correlated electron switch
- Patent number 10,032,487
- Issue date Jul 24, 2018
- ARM Ltd.
- Lucian Shifren
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ONE TIME PROGRAMMABLE MEMORY
- Publication number 20230282287
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- YU-DER CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
SMALL-AREA SIDE-CAPACITOR READ-ONLY MEMORY DEVICE, MEMORY ARRAY AND...
- Publication number 20230230646
- Publication date Jul 20, 2023
- YIELD MICROELECTRONICS CORP.
- YU TING HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
ANTIFUSE-TYPE ONE TIME PROGRAMMING MEMORY CELL AND CELL ARRAY STRUC...
- Publication number 20230049378
- Publication date Feb 16, 2023
- EMEMORY TECHNOLOGY INC.
- Lun-Chun CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMABLE MEMORY
- Publication number 20220199167
- Publication date Jun 23, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- YU-DER CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMABLE MEMORY
- Publication number 20210391018
- Publication date Dec 16, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- YU-DER CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE
- Publication number 20210295934
- Publication date Sep 23, 2021
- Kabushiki Kaisha Toshiba
- Toshiaki Dozaka
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICES AND SYSTEMS WITH READ-ONLY MEMORY FEATU...
- Publication number 20210098068
- Publication date Apr 1, 2021
- Micron Technology, Inc.
- Timothy B. Cowles
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND A METHOD OF OPERATING THE SAME
- Publication number 20210027831
- Publication date Jan 28, 2021
- SK HYNIX INC.
- Hyeon Su NAM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ROM CELL WITH TRANSISTOR BODY BIAS CONTROL CIRCUIT
- Publication number 20200082894
- Publication date Mar 12, 2020
- NXP B.V.
- Jainendra Singh
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM/ROM MEMORY RECONFIGURABLE BY SUBSTRATE POLARIZATION
- Publication number 20200035302
- Publication date Jan 30, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- David CORIAT
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICES AND SYSTEMS WITH READ-ONLY MEMORY FEATU...
- Publication number 20190371420
- Publication date Dec 5, 2019
- Micron Technology, Inc.
- Timothy B. Cowles
- G11 - INFORMATION STORAGE
Information Patent Application
Apparatus for High Speed ROM Cells
- Publication number 20190333919
- Publication date Oct 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICES AND SYSTEMS WITH READ-ONLY MEMORY FEATU...
- Publication number 20190325974
- Publication date Oct 24, 2019
- Micron Technology, Inc.
- Timothy B. Cowles
- G11 - INFORMATION STORAGE
Information Patent Application
ROM Chip Manufacturing Structures Having Shared Gate Electrodes
- Publication number 20190312031
- Publication date Oct 10, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR THRESHOLD VOLTAGE MODIFICATION AND DETECTION
- Publication number 20190122742
- Publication date Apr 25, 2019
- Micron Technology, Inc.
- Daniel B. Penney
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Circuit with Leakage Compensation
- Publication number 20180366205
- Publication date Dec 20, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Stephen Keith Heinrich-Barna
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR FABRICATING SEMICONDUCTOR SHIELDING STRUCTURES
- Publication number 20180182714
- Publication date Jun 28, 2018
- EVERSPIN TECHNOLOGIES, INC.
- De Jun HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROM Chip Manufacturing Structures
- Publication number 20180175026
- Publication date Jun 21, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME
- Publication number 20180108424
- Publication date Apr 19, 2018
- SK HYNIX INC.
- Jeong-Tae HWANG
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Circuit with Leakage Compensation
- Publication number 20180012668
- Publication date Jan 11, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Stephen Keith Heinrich-Barna
- G11 - INFORMATION STORAGE
Information Patent Application
SINGLE CIRCUIT ONE-TIME PROGRAMMABLE MEMORY AND VOLATILE MEMORY
- Publication number 20170337985
- Publication date Nov 23, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Anindita BORAH
- G11 - INFORMATION STORAGE
Information Patent Application
CLOCK GENERATING DEVICE, ELECTRONIC CIRCUIT, INTEGRATED CIRCUIT AND...
- Publication number 20170302285
- Publication date Oct 19, 2017
- Rohm Co., Ltd.
- Isao Niwa
- G11 - INFORMATION STORAGE
Information Patent Application
Read-Only Memory (ROM) Architecture with Selective Encoding
- Publication number 20170278582
- Publication date Sep 28, 2017
- BROADCOM CORPORATION
- Dechang SUN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT WITH LEAKAGE COMPENSATION
- Publication number 20170243659
- Publication date Aug 24, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Stephen Keith Heinrich-Barna
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT HAVING AN ELECTROSTATIC DISCHARGE PROTECTION FUN...
- Publication number 20170110170
- Publication date Apr 20, 2017
- Samsung Electronics Co., Ltd.
- KI HO KONG
- G11 - INFORMATION STORAGE
Information Patent Application
NEGATIVE HIGH VOLTAGE HOT SWITCHING CIRCUIT
- Publication number 20160365849
- Publication date Dec 15, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Gary Peter Moscaluk
- G11 - INFORMATION STORAGE
Information Patent Application
Sensing Scheme for High Speed Memory Circuits with Single Ended Sen...
- Publication number 20160336076
- Publication date Nov 17, 2016
- Synopsys, Inc.
- Sachin Taneja
- G11 - INFORMATION STORAGE
Information Patent Application
ROM Chip Manufacturing Structures
- Publication number 20160329325
- Publication date Nov 10, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
DIFFERENTIAL ONE-TIME-PROGRAMMABLE (OTP) MEMORY ARRAY
- Publication number 20160268002
- Publication date Sep 15, 2016
- QUALCOMM Incorporated
- Xiaonan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Flash Memory Device Configurable To Provide Read Only Memory Functi...
- Publication number 20160240255
- Publication date Aug 18, 2016
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G11 - INFORMATION STORAGE

using semiconductor devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device having voltage generator generating well poten...

Non-volatile memory devices and systems with read-only memory featu...

Small-area side-capacitor read-only memory device, memory array and...

Antifuse-type one time programming memory cell and cell array struc...

One time programmable memory

Storage device

OTP memory and method for making the same

Memory device to suspend ROM operation and a method of operating th...

Physically unclonable function circuit having lower gate-to-source/...

One time programmable memory

Systems and methods for updating memory circuitry

Semiconductor device

3D SRAM/ROM with several superimposed layers and reconfigurable by...

Non-volatile memory devices and systems with read-only memory featu...

ROM chip manufacturing structures having shared gate electrodes

Integrated circuit having an electrostatic discharge protection fun...

ROM cell with transistor body bias control circuit

Apparatus for high speed ROM cells

Memory circuit with leakage compensation

Clock generating device, electronic circuit, integrated circuit and...

Non-volatile memory devices and systems with read-only memory featu...

Memory devices including one-time programmable memory cells

ROM chip manufacturing structures having shared gate electrodes

Single circuit one-time programmable memory and volatile memory

Systems and methods for threshold voltage modification and detection

Methods for fabricating semiconductor shielding structures

Systems and methods for threshold voltage modification and detection

Semiconductor device and method for operating the same

Memory circuit with leakage compensation

One-time and multi-time programming using a correlated electron switch

Patents Applicationslast 30 patents

ONE TIME PROGRAMMABLE MEMORY

SMALL-AREA SIDE-CAPACITOR READ-ONLY MEMORY DEVICE, MEMORY ARRAY AND...

ANTIFUSE-TYPE ONE TIME PROGRAMMING MEMORY CELL AND CELL ARRAY STRUC...

ONE TIME PROGRAMMABLE MEMORY

ONE TIME PROGRAMMABLE MEMORY

STORAGE DEVICE

NON-VOLATILE MEMORY DEVICES AND SYSTEMS WITH READ-ONLY MEMORY FEATU...

MEMORY DEVICE AND A METHOD OF OPERATING THE SAME

ROM CELL WITH TRANSISTOR BODY BIAS CONTROL CIRCUIT

SRAM/ROM MEMORY RECONFIGURABLE BY SUBSTRATE POLARIZATION

NON-VOLATILE MEMORY DEVICES AND SYSTEMS WITH READ-ONLY MEMORY FEATU...

Apparatus for High Speed ROM Cells

NON-VOLATILE MEMORY DEVICES AND SYSTEMS WITH READ-ONLY MEMORY FEATU...

ROM Chip Manufacturing Structures Having Shared Gate Electrodes

SYSTEMS AND METHODS FOR THRESHOLD VOLTAGE MODIFICATION AND DETECTION

Memory Circuit with Leakage Compensation

METHODS FOR FABRICATING SEMICONDUCTOR SHIELDING STRUCTURES

ROM Chip Manufacturing Structures

SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME

Memory Circuit with Leakage Compensation

SINGLE CIRCUIT ONE-TIME PROGRAMMABLE MEMORY AND VOLATILE MEMORY

CLOCK GENERATING DEVICE, ELECTRONIC CIRCUIT, INTEGRATED CIRCUIT AND...

Read-Only Memory (ROM) Architecture with Selective Encoding

MEMORY CIRCUIT WITH LEAKAGE COMPENSATION

INTEGRATED CIRCUIT HAVING AN ELECTROSTATIC DISCHARGE PROTECTION FUN...

NEGATIVE HIGH VOLTAGE HOT SWITCHING CIRCUIT

Sensing Scheme for High Speed Memory Circuits with Single Ended Sen...

ROM Chip Manufacturing Structures

DIFFERENTIAL ONE-TIME-PROGRAMMABLE (OTP) MEMORY ARRAY

Flash Memory Device Configurable To Provide Read Only Memory Functi...