using variable threshold transistors

Industry

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G11C16/04

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/04using variable threshold transistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
All level coarse/fine programming of memory cells
- Patent number 12,224,012
- Issue date Feb 11, 2025
- Micron Technology, Inc.
- Lawrence Celso Miranda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices having cell over periphery structure, memory package...
- Patent number 12,224,277
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Yonghyuk Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
3D memory devices and structures with memory arrays and metal layers
- Patent number 12,225,704
- Issue date Feb 11, 2025
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device and voltage control method for semicon...
- Patent number 12,224,018
- Issue date Feb 11, 2025
- Kioxia Corporation
- Xu Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Compression-based data operations in a memory device
- Patent number 12,222,805
- Issue date Feb 11, 2025
- Micron Technology, Inc.
- David Matthew Springberg
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Data reliability for extreme temperature usage conditions in data s...
- Patent number 12,224,771
- Issue date Feb 11, 2025
- Lodestar Licensing Group LLC
- Poorna Kale
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device, memory system, and method of operating the same
- Patent number 12,224,004
- Issue date Feb 11, 2025
- Yangtze Memory Technologies Co., Ltd.
- Weijun Wan
- G11 - INFORMATION STORAGE
Information Patent Grant
Staggered active bitline sensing
- Patent number 12,224,015
- Issue date Feb 11, 2025
- Intel Corporation
- Ali Khakifirooz
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 12,223,997
- Issue date Feb 11, 2025
- Kioxia Corporation
- Toshifumi Watanabe
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory
- Patent number 12,224,010
- Issue date Feb 11, 2025
- Rohm Co., Ltd.
- Seiji Takenaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Bank design with differential bulk bias in eFuse array
- Patent number 12,217,798
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device, storage device including the same, and...
- Patent number 12,217,802
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Jooyong Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device and method of manufacturing the non-vola...
- Patent number 12,219,764
- Issue date Feb 4, 2025
- SK hynix Inc.
- In Su Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Parallelized defect detection across multiple sub-blocks in a memor...
- Patent number 12,217,799
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Paing Z. Htet
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device and programming method thereof
- Patent number 12,217,807
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Yonghyuk Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device including combined sensing node and cache...
- Patent number 12,217,804
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Yongsung Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for threshold voltage scans
- Patent number 12,217,806
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Aniello Palomba
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive frequency control for high-speed memory devices
- Patent number 12,216,529
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Jian Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of improving programming operations in 3D NAND systems
- Patent number 12,216,907
- Issue date Feb 4, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhe Luo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-gate string drivers having shared pillar structure
- Patent number 12,219,772
- Issue date Feb 4, 2025
- Akira Goda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device
- Patent number 12,211,558
- Issue date Jan 28, 2025
- Kioxia Corporation
- Yasuhiro Uchimura
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system with verify operations of odd and even word lines
- Patent number 12,211,567
- Issue date Jan 28, 2025
- Kioxia Corporation
- Kazutaka Ikegami
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 12,211,557
- Issue date Jan 28, 2025
- Kioxia Corporation
- Kyosuke Sano
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having memory chip bonded to a CMOS chi...
- Patent number 12,211,544
- Issue date Jan 28, 2025
- Kioxia Corporation
- Hiroshi Maejima
- G11 - INFORMATION STORAGE
Information Patent Grant
Ternary content addressable memory and decision generation method f...
- Patent number 12,211,550
- Issue date Jan 28, 2025
- Macronix International Co., Ltd.
- Po-Hao Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 12,211,551
- Issue date Jan 28, 2025
- Kioxia Corporation
- Natsuki Sakaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent slow-fast memory cell programming
- Patent number 12,211,552
- Issue date Jan 28, 2025
- Micron Technology, Inc.
- Lawrence Celso Miranda
- G11 - INFORMATION STORAGE
Information Patent Grant
Page buffer circuit and memory device including the same
- Patent number 12,211,559
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Yongsung Cho
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Neuromorphic circuit including spike regulator based on flash memory
- Patent number 12,210,960
- Issue date Jan 28, 2025
- Korea Institute of Science and Technology
- Joon Young Kwak
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor storage device acquiring voltage from dummy pillars
- Patent number 12,211,561
- Issue date Jan 28, 2025
- Kioxia Corporation
- Takeshi Hioka
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
DEVICE AND METHOD TO GENERATE BIAS VOLTAGES IN NON-VOLATILE MEMORY
- Publication number 20250054552
- Publication date Feb 13, 2025
- STMicroelectronics International N.V.
- Vikas RANA
- G11 - INFORMATION STORAGE
Information Patent Application
STATE-DEPENDENT FAIL BIT COUNT CRITERIA FOR MEMORY APPARATUS PROGRA...
- Publication number 20250054556
- Publication date Feb 13, 2025
- Western Digital Technologies, Inc.
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF PROGRAMMING MEMORY DEVICE AND RELATED MEMORY DEVICE
- Publication number 20250054539
- Publication date Feb 13, 2025
- Yangtze Memory Technologies Co., Ltd.
- Ying Cui
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF MEMORY DEVICE
- Publication number 20250054551
- Publication date Feb 13, 2025
- SK HYNIX INC.
- Chan Keun KWON
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM
- Publication number 20250054553
- Publication date Feb 13, 2025
- KIOXIA Corporation
- Tsukasa TOKUTOMI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE INCLUDING CHARGE PUMP FOR GENERATING VOLTAGE AND OPER...
- Publication number 20250054554
- Publication date Feb 13, 2025
- SK HYNIX INC.
- Won Jae CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
FIVE LEVEL CELL PROGRAM ALGORITHM WITH APPENDED BIT LEVEL ERASE FOR...
- Publication number 20250054555
- Publication date Feb 13, 2025
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF, THREE-DIMEN...
- Publication number 20250056798
- Publication date Feb 13, 2025
- Yangtze Memory Technologies Co., Ltd.
- Shuangshuang Wu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250054521
- Publication date Feb 13, 2025
- KIOXIA Corporation
- Masato SUGITA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE MEMORY DEVICE
- Publication number 20250056796
- Publication date Feb 13, 2025
- SK HYNIX INC.
- Won Geun CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATING METHOD FOR A MEMORY, A MEMORY AND A MEMORY SYSTEM
- Publication number 20250046383
- Publication date Feb 6, 2025
- Yangtze Memory Technologies Co., Ltd.
- Boxuan CHENG
- G11 - INFORMATION STORAGE
Information Patent Application
LOW RESISTANCE ENHANCED ASPECT RATIO CONNECTOR FOR SEMICONDUCTOR DE...
- Publication number 20250046711
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- Shyam Surthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE WITH FIRST AND SECOND SENSE AMPLIFIERS
- Publication number 20250046382
- Publication date Feb 6, 2025
- KIOXIA Corporation
- Kosuke YANAGIDAIRA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CONFIGURED TO PERFORM A CHANNEL PRECHARGE OPERATION AND METH...
- Publication number 20250046385
- Publication date Feb 6, 2025
- SK HYNIX INC.
- Hee Youl LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD
- Publication number 20250044990
- Publication date Feb 6, 2025
- KIOXIA Corporation
- Marie SIA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SERIAL INTERFACE FOR AN ACTIVE INPUT/OUTPUT EXPANDER OF A MEMORY SU...
- Publication number 20250045217
- Publication date Feb 6, 2025
- Suresh Rajgopal
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND METHOD OF PERFORMING A PROGRAMMING OPERATION
- Publication number 20250046376
- Publication date Feb 6, 2025
- Yangtze Memory Technologies Co., Ltd.
- Ying CUI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250046379
- Publication date Feb 6, 2025
- KIOXIA Corporation
- Yuki SAKAGUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES USING A DYNAMIC LATCH TO PROVIDE MULTIPLE BIAS VOLTAGES
- Publication number 20250046381
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- Koichi Kawai
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WHICH GENERATES OPERATION VOLTAGES IN PARALLEL WITH R...
- Publication number 20250046384
- Publication date Feb 6, 2025
- KIOXIA Corporation
- Akio SUGAHARA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...
- Publication number 20250048629
- Publication date Feb 6, 2025
- SK HYNIX INC.
- Won Jae CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
MANAGED NAND DATA COMPRESSION
- Publication number 20250036318
- Publication date Jan 30, 2025
- Lodestar Licensing Group, LLC
- Sebastien Andre Jean
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20250037768
- Publication date Jan 30, 2025
- Micron Technology, Inc.
- Jordan D. Greenlee
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY
- Publication number 20250040136
- Publication date Jan 30, 2025
- SK HYNIX INC.
- In Ku KANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY, OPERATION METHODS THEREOF AND MEMORY SYSTEMS
- Publication number 20250037769
- Publication date Jan 30, 2025
- Yangtze Memory Technologies Co., Ltd.
- JiaLiang Deng
- G11 - INFORMATION STORAGE
Information Patent Application
READ VOLTAGE OVERDRIVE IN READ RECOVERY
- Publication number 20250037773
- Publication date Jan 30, 2025
- Micron Technology, Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
3D NAND MEMORY WITH FAST CORRECTIVE READ
- Publication number 20250037774
- Publication date Jan 30, 2025
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRIC VERTICAL THIN FILM TRANSISTOR SELECTOR
- Publication number 20250040182
- Publication date Jan 30, 2025
- Micron Technology, Inc.
- Paolo Fantini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE INCLUDING A GERMANIUM-CONTAINING SOURCE STRUCTURE AND...
- Publication number 20250040139
- Publication date Jan 30, 2025
- SANDISK TECHNOLOGIES LLC
- Fei ZHOU
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE ERASE PULSE TO IMPROVE MEMORY CELL ENDURANCE AND ERASE TIM...
- Publication number 20250037772
- Publication date Jan 30, 2025
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE

using variable threshold transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

All level coarse/fine programming of memory cells

Memory devices having cell over periphery structure, memory package...

3D memory devices and structures with memory arrays and metal layers

Semiconductor storage device and voltage control method for semicon...

Compression-based data operations in a memory device

Data reliability for extreme temperature usage conditions in data s...

Memory device, memory system, and method of operating the same

Staggered active bitline sensing

Nonvolatile semiconductor memory device

Non-volatile memory

Bank design with differential bulk bias in eFuse array

Non-volatile memory device, storage device including the same, and...

Non-volatile memory device and method of manufacturing the non-vola...

Parallelized defect detection across multiple sub-blocks in a memor...

Non-volatile memory device and programming method thereof

Nonvolatile memory device including combined sensing node and cache...

Techniques for threshold voltage scans

Adaptive frequency control for high-speed memory devices

Method of improving programming operations in 3D NAND systems

Multi-gate string drivers having shared pillar structure

Semiconductor storage device

Memory system with verify operations of odd and even word lines

Semiconductor memory device

Semiconductor memory device having memory chip bonded to a CMOS chi...

Ternary content addressable memory and decision generation method f...

Semiconductor memory device

Concurrent slow-fast memory cell programming

Page buffer circuit and memory device including the same

Neuromorphic circuit including spike regulator based on flash memory

Semiconductor storage device acquiring voltage from dummy pillars

Patents Applicationslast 30 patents

DEVICE AND METHOD TO GENERATE BIAS VOLTAGES IN NON-VOLATILE MEMORY

STATE-DEPENDENT FAIL BIT COUNT CRITERIA FOR MEMORY APPARATUS PROGRA...

METHOD OF PROGRAMMING MEMORY DEVICE AND RELATED MEMORY DEVICE

MEMORY DEVICE AND OPERATING METHOD OF MEMORY DEVICE

MEMORY SYSTEM

MEMORY DEVICE INCLUDING CHARGE PUMP FOR GENERATING VOLTAGE AND OPER...

FIVE LEVEL CELL PROGRAM ALGORITHM WITH APPENDED BIT LEVEL ERASE FOR...

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF, THREE-DIMEN...

SEMICONDUCTOR DEVICE

MEMORY DEVICE AND METHOD OF MANUFACTURING THE MEMORY DEVICE

OPERATING METHOD FOR A MEMORY, A MEMORY AND A MEMORY SYSTEM

LOW RESISTANCE ENHANCED ASPECT RATIO CONNECTOR FOR SEMICONDUCTOR DE...

SEMICONDUCTOR MEMORY DEVICE WITH FIRST AND SECOND SENSE AMPLIFIERS

MEMORY CONFIGURED TO PERFORM A CHANNEL PRECHARGE OPERATION AND METH...

MEMORY DEVICE AND METHOD

SERIAL INTERFACE FOR AN ACTIVE INPUT/OUTPUT EXPANDER OF A MEMORY SU...

MEMORY DEVICE AND METHOD OF PERFORMING A PROGRAMMING OPERATION

SEMICONDUCTOR MEMORY DEVICE

MEMORY DEVICES USING A DYNAMIC LATCH TO PROVIDE MULTIPLE BIAS VOLTAGES

MEMORY DEVICE WHICH GENERATES OPERATION VOLTAGES IN PARALLEL WITH R...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...

MANAGED NAND DATA COMPRESSION

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

SEMICONDUCTOR MEMORY

MEMORY, OPERATION METHODS THEREOF AND MEMORY SYSTEMS

READ VOLTAGE OVERDRIVE IN READ RECOVERY

3D NAND MEMORY WITH FAST CORRECTIVE READ

ASYMMETRIC VERTICAL THIN FILM TRANSISTOR SELECTOR

MEMORY DEVICE INCLUDING A GERMANIUM-CONTAINING SOURCE STRUCTURE AND...

ADAPTIVE ERASE PULSE TO IMPROVE MEMORY CELL ENDURANCE AND ERASE TIM...