V-Grooves

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Y10S148/168

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/168V-Grooves

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Patents Grantslast 30 patents

Information Patent Grant
Fabrication method for horizontal direction semiconductor PN juncti...
- Patent number 5,882,950
- Issue date Mar 16, 1999
- Korea Institute of Science and Technology
- Suk-Ki Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor with reduced projective area of source region
- Patent number 5,508,547
- Issue date Apr 16, 1996
- United Microelectronics Corp.
- Sheng-Hsing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing an LDMOS transistor having reduced dimensions,...
- Patent number 5,466,616
- Issue date Nov 14, 1995
- United Microelectronics Corp.
- Sheng-Hsing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the controlled growth of single-crystal films of silico...
- Patent number 5,363,800
- Issue date Nov 15, 1994
- The United States of America as represented by the United States National Aer...
- David J. Larkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for thinning SOI films having improved thickness uniformity
- Patent number 5,318,663
- Issue date Jun 7, 1994
- International Business Machines Corporation
- Taqi N. Buti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride polish stop for forming SOI wafers
- Patent number 5,262,346
- Issue date Nov 16, 1993
- International Business Machines Corporation
- Ahmet Bindal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an integrated circuit having active regions n...
- Patent number 5,196,378
- Issue date Mar 23, 1993
- Texas Instruments Incorporated
- Kenneth E. Bean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method therefore
- Patent number 5,145,795
- Issue date Sep 8, 1992
- Motorola, Inc.
- Paul W. Sanders
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a high density EPROM cell on a trench wall
- Patent number 5,135,879
- Issue date Aug 4, 1992
- Texas Instruments Incorporated
- William F. Richardson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,128,743
- Issue date Jul 7, 1992
- Hitachi, Ltd.
- Yoichi Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a silicon-based semiconductor optical device mount
- Patent number 5,024,966
- Issue date Jun 18, 1991
- AT&T Bell Laboratories
- Norman R. Dietrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a MOSFET with substrate source contact
- Patent number 5,023,196
- Issue date Jun 11, 1991
- Motorola Inc.
- Robert J. Johnsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving cleaving of diode arrays
- Patent number 4,997,793
- Issue date Mar 5, 1991
- Eastman Kodak Company
- Scott D. McClurg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Grooved DMOS process with varying gate dielectric thickness
- Patent number 4,914,058
- Issue date Apr 3, 1990
- Siliconix Incorporated
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the manufacture of a MESFET comprising self aligned gate
- Patent number 4,889,827
- Issue date Dec 26, 1989
- Siemens Aktiengesellschaft
- Josef Willer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making and separating semiconductor lasers
- Patent number 4,883,771
- Issue date Nov 28, 1989
- Mitsubishi Denki Kabushiki Kaisha
- Hisao Kumabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for setting the threshold voltage of a vertical power MOSFET
- Patent number 4,859,621
- Issue date Aug 22, 1989
- General Instrument Corp.
- Willem G. Einthoven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a two-dimensional electron gas semiconductor de...
- Patent number 4,849,368
- Issue date Jul 18, 1989
- Fujitsu Limited
- Yoshimi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 4,841,532
- Issue date Jun 20, 1989
- Mitsubishi Denki Kabushiki Kaisha
- Hisao Kumabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT with etch-stop
- Patent number 4,742,379
- Issue date May 3, 1988
- Fujitsu Limited
- Yoshimi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a vertical MOSFET with single surface elect...
- Patent number 4,683,643
- Issue date Aug 4, 1987
- Nippon Telegraph & Telephone Corporation
- Shigeru Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making silicon diaphragm pressure sensor
- Patent number 4,670,969
- Issue date Jun 9, 1987
- Hitachi, Ltd.
- Kazuji Yamada
- G01 - MEASURING TESTING
Information Patent Grant
Tapered groove IC isolation
- Patent number 4,635,090
- Issue date Jan 6, 1987
- Hitachi, Ltd.
- Yoichi Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor memory device having trench m...
- Patent number 4,577,395
- Issue date Mar 25, 1986
- Kabushiki Kaisha Toshiba
- Tadashi Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature layered silicon structures
- Patent number 4,523,964
- Issue date Jun 18, 1985
- Becton, Dickinson and Company
- L. Bruce Wilner
- G01 - MEASURING TESTING
Information Patent Grant
Method of producing lateral transistor separated from substrate by...
- Patent number 4,435,899
- Issue date Mar 13, 1984
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming closely spaced device regions utilizing selective...
- Patent number 4,289,550
- Issue date Sep 15, 1981
- Raytheon Company
- Wolfgang M. Feist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit
- Patent number 4,259,681
- Issue date Mar 31, 1981
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Epitaxial method of fabricating single IGFET memory cell with burie...
- Patent number 4,105,475
- Issue date Aug 8, 1978
- American Microsystems, Inc.
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming isolated regions of silicon utilizing reactive i...
- Patent number 4,104,086
- Issue date Aug 1, 1978
- International Business Machines Corporation
- James Allan Bondur
- H01 - BASIC ELECTRIC ELEMENTS

Industry

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Current Industry

Patents Grantslast 30 patents

Fabrication method for horizontal direction semiconductor PN juncti...

LDMOS transistor with reduced projective area of source region

Method of producing an LDMOS transistor having reduced dimensions,...

Process for the controlled growth of single-crystal films of silico...

Method for thinning SOI films having improved thickness uniformity

Nitride polish stop for forming SOI wafers

Method of fabricating an integrated circuit having active regions n...

Semiconductor device and method therefore

Method of fabricating a high density EPROM cell on a trench wall

Semiconductor device and method of manufacturing the same

Method of forming a silicon-based semiconductor optical device mount

Method for forming a MOSFET with substrate source contact

Method of improving cleaving of diode arrays

Grooved DMOS process with varying gate dielectric thickness

Method for the manufacture of a MESFET comprising self aligned gate

Method of making and separating semiconductor lasers

Method for setting the threshold voltage of a vertical power MOSFET

Method of producing a two-dimensional electron gas semiconductor de...

Semiconductor laser

HEMT with etch-stop

Method of manufacturing a vertical MOSFET with single surface elect...

Method of making silicon diaphragm pressure sensor

Tapered groove IC isolation

Method of manufacturing semiconductor memory device having trench m...

High temperature layered silicon structures

Method of producing lateral transistor separated from substrate by...

Method of forming closely spaced device regions utilizing selective...

Integrated circuit

Epitaxial method of fabricating single IGFET memory cell with burie...

Method for forming isolated regions of silicon utilizing reactive i...

Patents Applicationslast 30 patents