Vertical isolation by lateral overgrowth techniques

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H01L21/76272

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76272Vertical isolation by lateral overgrowth techniques

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 12,020,980
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Soon-Kang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with backside metal structures and methods of formation the...
- Patent number 11,011,409
- Issue date May 18, 2021
- Infineon Technologies AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor chip and semiconductor chip
- Patent number 11,004,876
- Issue date May 11, 2021
- OSRAM OLED GmbH
- Christoph Eichler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer over buried isolation layer
- Patent number 10,886,164
- Issue date Jan 5, 2021
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with backside metal structures and methods of formation the...
- Patent number 10,535,553
- Issue date Jan 14, 2020
- Infineon Technologies AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor chip and semiconductor chip
- Patent number 10,396,106
- Issue date Aug 27, 2019
- Osram Opto Semiconductors GmbH
- Christoph Eichler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of wafer thinning and realizing backside metal structures
- Patent number 10,325,804
- Issue date Jun 18, 2019
- Infineon Technologies AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual isolation fin and method of making
- Patent number 10,217,659
- Issue date Feb 26, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with backside metal structures and methods of formation the...
- Patent number 9,960,076
- Issue date May 1, 2018
- Infineon Technologies AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrates with buried isolation layers and methods of formation th...
- Patent number 9,875,926
- Issue date Jan 23, 2018
- Infineon Technologies AG
- Iris Moder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer over buried isolation layer
- Patent number 9,865,498
- Issue date Jan 9, 2018
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverted trapezoidal recess for epitaxial growth
- Patent number 9,583,379
- Issue date Feb 28, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 8,765,540
- Issue date Jul 1, 2014
- The Institute of Microelectronics Chinese Academy of Science
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor substrate and method for m...
- Patent number 7,332,399
- Issue date Feb 19, 2008
- Seiko Epson Corporation
- Juri Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an isolation structure for an integrated circuit...
- Patent number 6,830,988
- Issue date Dec 14, 2004
- National Semiconductor Corporation
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 6,503,799
- Issue date Jan 7, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Katsuyuki Horita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of silicon on insulator substrates
- Patent number 6,239,469
- Issue date May 29, 2001
- International Business Machines Corporation
- Ronald Jay Bolam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator devices and method for producing the same
- Patent number 6,228,691
- Issue date May 8, 2001
- Intel Corp.
- Brian Doyle
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for fabrication of silicon on insulator substrates
- Patent number 6,194,253
- Issue date Feb 27, 2001
- International Business Machines Corporation
- Ronald Jay Bolam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for formation of silicon-on-insulator (SOI) and source/drai...
- Patent number 6,174,754
- Issue date Jan 16, 2001
- Taiwan Semiconductor Manufacturing Company
- Jin-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator devices having insulating layers therein...
- Patent number 6,130,457
- Issue date Oct 10, 2000
- Samsung Electronics Co., Ltd.
- Sun-il Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor-on-insulator substrates
- Patent number 5,877,046
- Issue date Mar 2, 1999
- Samsung Electronics Co., Ltd.
- Sun-il Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for isolating a semiconductor layer on an insulator
- Patent number 5,686,343
- Issue date Nov 11, 1997
- Goldstar Electron Co. Ltd.
- Chang-Jae Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor apparatus
- Patent number 5,635,411
- Issue date Jun 3, 1997
- Rohm Co., Ltd.
- Hidemi Takasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having island forming grooves
- Patent number 5,565,697
- Issue date Oct 15, 1996
- Ricoh Company, Ltd.
- Toshifumi Asakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having active region in semiconductor layer on...
- Patent number 5,528,054
- Issue date Jun 18, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Takashi Ipposhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate with electrical contact in groove
- Patent number 5,459,346
- Issue date Oct 17, 1995
- Ricoh Co., Ltd.
- Toshifumi Asakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming single crystalline electrical isolated wells
- Patent number 5,422,299
- Issue date Jun 6, 1995
- Purdue Research Foundation
- Gerold W. Neudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming single-crystal semiconductor films
- Patent number 5,338,388
- Issue date Aug 16, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Kazuyuki Sugahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a semiconduct...
- Patent number 5,308,445
- Issue date May 3, 1994
- Rohm Co., Ltd.
- Hidemi Takasu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20240395602
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Soon-Kang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20230386895
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Soon-Kang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20230016445
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Soon-Kang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices with Backside Metal Structures and Methods of Formation The...
- Publication number 20200098617
- Publication date Mar 26, 2020
- INFINEON TECHNOLOGIES AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP
- Publication number 20190355768
- Publication date Nov 21, 2019
- Osram Opto Semiconductors GmbH
- Christoph EICHLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices with Backside Metal Structures and Methods of Formation The...
- Publication number 20180233399
- Publication date Aug 16, 2018
- INFINEON TECHNOLOGIES AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Wafer Thinning and Realizing Backside Metal Structures
- Publication number 20180144974
- Publication date May 24, 2018
- INFINEON TECHNOLOGIES AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated Semiconductor Layer Over Buried Isolation Layer
- Publication number 20180096882
- Publication date Apr 5, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices with Backside Metal Structures and Methods of Formation The...
- Publication number 20180040504
- Publication date Feb 8, 2018
- INFINEON TECHNOLOGIES AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL ISOLATION FIN AND METHOD OF MAKING
- Publication number 20170207115
- Publication date Jul 20, 2017
- International Business Machines Corporation
- CHENG-WEI CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inverted Trapezoidal Recess for Epitaxial Growth
- Publication number 20160064271
- Publication date Mar 3, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH STRAINED SILICON AND METHODS FOR FABRICATI...
- Publication number 20150076559
- Publication date Mar 19, 2015
- GLOBALFOUNDRIES, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR LAYER HAVING AT LEAST TWO DIFFEREN...
- Publication number 20140370666
- Publication date Dec 18, 2014
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Maud VINET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure and Method for Manufacturing the Same
- Publication number 20130193490
- Publication date Aug 1, 2013
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inverted Trapezoidal Recess for Epitaxial Growth
- Publication number 20120025201
- Publication date Feb 2, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Clement Hsingjen Wann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing semiconductor substrate and method for man...
- Publication number 20050255678
- Publication date Nov 17, 2005
- SEIKO EPSON CORPORATION
- Juri Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device
- Publication number 20020127841
- Publication date Sep 12, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Katsuyuki Horita
- H01 - BASIC ELECTRIC ELEMENTS

Vertical isolation by lateral overgrowth techniques

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure and forming method thereof

Devices with backside metal structures and methods of formation the...

Method for producing a semiconductor chip and semiconductor chip

Isolated semiconductor layer over buried isolation layer

Devices with backside metal structures and methods of formation the...

Method for producing a semiconductor chip and semiconductor chip

Method of wafer thinning and realizing backside metal structures

Dual isolation fin and method of making

Devices with backside metal structures and methods of formation the...

Substrates with buried isolation layers and methods of formation th...

Isolated semiconductor layer over buried isolation layer

Inverted trapezoidal recess for epitaxial growth

Semiconductor structure and method for manufacturing the same

Method for manufacturing a semiconductor substrate and method for m...

Method of forming an isolation structure for an integrated circuit...

Method of manufacturing semiconductor device

Method for fabrication of silicon on insulator substrates

Silicon-on-insulator devices and method for producing the same

Method for fabrication of silicon on insulator substrates

Methods for formation of silicon-on-insulator (SOI) and source/drai...

Semiconductor-on-insulator devices having insulating layers therein...

Methods of forming semiconductor-on-insulator substrates

Process for isolating a semiconductor layer on an insulator

Method of making semiconductor apparatus

Semiconductor structure having island forming grooves

Semiconductor device having active region in semiconductor layer on...

Semiconductor substrate with electrical contact in groove

Method of forming single crystalline electrical isolated wells

Method of forming single-crystal semiconductor films

Method of manufacturing a semiconductor device having a semiconduct...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

Devices with Backside Metal Structures and Methods of Formation The...

METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP

Devices with Backside Metal Structures and Methods of Formation The...

Method of Wafer Thinning and Realizing Backside Metal Structures

Isolated Semiconductor Layer Over Buried Isolation Layer

Devices with Backside Metal Structures and Methods of Formation The...

DUAL ISOLATION FIN AND METHOD OF MAKING

Inverted Trapezoidal Recess for Epitaxial Growth

INTEGRATED CIRCUITS WITH STRAINED SILICON AND METHODS FOR FABRICATI...

METHOD OF MAKING A SEMICONDUCTOR LAYER HAVING AT LEAST TWO DIFFEREN...

Semiconductor Structure and Method for Manufacturing the Same

Inverted Trapezoidal Recess for Epitaxial Growth

Method for manufacturing semiconductor substrate and method for man...

Method of manufacturing semiconductor device