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H01L21/823412

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823412with a particular manufacturing method of the channel structures

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Transistor and manufacturing method of the same
- Patent number 12,288,804
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including top-gate bottom-contact transistor
- Patent number 12,288,824
- Issue date Apr 29, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor device having dipole-containing gate...
- Patent number 12,288,695
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with doped structure
- Patent number 12,288,809
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer for semiconductor device
- Patent number 12,283,618
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Ting Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
String driver assemblies including two-dimensional materials, and r...
- Patent number 12,284,805
- Issue date Apr 22, 2025
- Lodestar Licensing Group LLC
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with a source/drain barrier layer and methods...
- Patent number 12,278,145
- Issue date Apr 15, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory having a continuous channel
- Patent number 12,279,420
- Issue date Apr 15, 2025
- Micron Technology, Inc.
- Luan C. Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,278,285
- Issue date Apr 15, 2025
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit
- Patent number 12,273,109
- Issue date Apr 8, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Jun Koyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming epitaxial source/drain features and semiconducto...
- Patent number 12,272,732
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple gate field-effect transistors having various gate oxide th...
- Patent number 12,266,575
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement channel 2D material integration
- Patent number 12,261,209
- Issue date Mar 25, 2025
- Tokyo Electron Limited
- Robert D. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,261,205
- Issue date Mar 25, 2025
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing semiconductor devices by etching active fi...
- Patent number 12,261,087
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Min-Chul Sun
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device with reduced loading effect
- Patent number 12,261,085
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Lun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner filler layer for multi-patterned metal gate for nanostructure...
- Patent number 12,255,100
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around devices having gate dielectric layers of varying th...
- Patent number 12,255,105
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Hsun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-Vt nanosheet devices
- Patent number 12,255,106
- Issue date Mar 18, 2025
- Interational Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,255,230
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming of inner spacer structure using semiconductor ma...
- Patent number 12,255,102
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming fin-on-nanosheet transistor stacks
- Patent number 12,255,099
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Gunho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation of nanostructures for nano-FET
- Patent number 12,255,101
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sideways vias in isolation areas to contact interior layers in stac...
- Patent number 12,255,137
- Issue date Mar 18, 2025
- Intel Corporation
- Ehren Mannebach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,255,257
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Mongsong Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method for fabricating the same
- Patent number 12,249,620
- Issue date Mar 11, 2025
- Hyundai Motor Company
- Jong Seok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with dielectric fin feature
- Patent number 12,249,621
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guan-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 12,249,544
- Issue date Mar 11, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having backside gate contact
- Patent number 12,243,823
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,237,329
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...
- Publication number 20250072052
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun Yi CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...
- Publication number 20250062190
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET
- Publication number 20250063809
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME
- Publication number 20250063778
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPECIALIZED TRANSISTORS
- Publication number 20250063791
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT GATE ISOLATION
- Publication number 20250063792
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GA...
- Publication number 20250054765
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...
- Publication number 20250056850
- Publication date Feb 13, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING...
- Publication number 20250040236
- Publication date Jan 30, 2025
- SOCIONEXT INC.
- Junji IWAHORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...
- Publication number 20250040237
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vitor A. Vulcano Rossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Formation With Staggered Gate Patterning
- Publication number 20250040184
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250040215
- Publication date Jan 30, 2025
- SAMSUNG ELECTRONICS CO,. LTD.
- Dong Hoon HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL PATTERNING AND MIDDLE-OF-LINE SELF-ALIGNED CONT...
- Publication number 20250031414
- Publication date Jan 23, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS
- Publication number 20250031446
- Publication date Jan 23, 2025
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BACKSIDE GATE CONTACT
- Publication number 20250029925
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Assemblies Having Conductive Structures Along Pillars of Semiconduc...
- Publication number 20250022955
- Publication date Jan 16, 2025
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multigate Device Having Reduced Contact Resistivity
- Publication number 20250015154
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Georgios VELLIANITIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE STRUCTURE AND METHOD
- Publication number 20250016983
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE,...
- Publication number 20250015197
- Publication date Jan 9, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20250006559
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Siao-Jing Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
- Publication number 20250006846
- Publication date Jan 2, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250006828
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- JHON JHY LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD OF MANUFACTURING TRANSISTOR
- Publication number 20250006813
- Publication date Jan 2, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USER MODEL-BASED DATA LOSS PREVENTION
- Publication number 20240430308
- Publication date Dec 26, 2024
- ARMORBLOX LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED...
- Publication number 20240421035
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Nicolas Jean Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES
- Publication number 20240421209
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING MG CONTACTS COUPLED BY MP CONTACT AND METHOD OF MANUF...
- Publication number 20240421187
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240413157
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE
- Publication number 20240413166
- Publication date Dec 12, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240404884
- Publication date Dec 5, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the channel structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Transistor and manufacturing method of the same

Semiconductor device including top-gate bottom-contact transistor

Method of forming a transistor device having dipole-containing gate...

Semiconductor device with doped structure

Inner spacer for semiconductor device

String driver assemblies including two-dimensional materials, and r...

Semiconductor devices with a source/drain barrier layer and methods...

Memory having a continuous channel

Semiconductor devices

Semiconductor integrated circuit

Method for forming epitaxial source/drain features and semiconducto...

Multiple gate field-effect transistors having various gate oxide th...

Replacement channel 2D material integration

Semiconductor device

Methods of manufacturing semiconductor devices by etching active fi...

Semiconductor device with reduced loading effect

Inner filler layer for multi-patterned metal gate for nanostructure...

Gate-all-around devices having gate dielectric layers of varying th...

Multi-Vt nanosheet devices

Semiconductor structure and method for forming the same

Methods of forming of inner spacer structure using semiconductor ma...

Methods of forming fin-on-nanosheet transistor stacks

Ion implantation of nanostructures for nano-FET

Sideways vias in isolation areas to contact interior layers in stac...

Semiconductor device

Power semiconductor device and method for fabricating the same

Semiconductor structure with dielectric fin feature

Semiconductor device, method of manufacturing the same and electron...

Semiconductor device having backside gate contact

Semiconductor device and method for fabricating the same

Patents Applicationslast 30 patents

DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...

STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...

FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET

GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME

SPECIALIZED TRANSISTORS

CONTACT GATE ISOLATION

INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GA...

NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING...

INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...

Contact Formation With Staggered Gate Patterning

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

WORK FUNCTION METAL PATTERNING AND MIDDLE-OF-LINE SELF-ALIGNED CONT...

HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS

SEMICONDUCTOR DEVICE HAVING BACKSIDE GATE CONTACT

Assemblies Having Conductive Structures Along Pillars of Semiconduc...

Multigate Device Having Reduced Contact Resistivity

MEMORY DEVICE STRUCTURE AND METHOD

METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE,...

GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

TRANSISTOR AND METHOD OF MANUFACTURING TRANSISTOR

USER MODEL-BASED DATA LOSS PREVENTION

TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED...

SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES

DEVICE HAVING MG CONTACTS COUPLED BY MP CONTACT AND METHOD OF MANUF...

SEMICONDUCTOR DEVICE AND METHOD

ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE