with a particular manufacturing method of the gate conductors

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H01L21/823828

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823828with a particular manufacturing method of the gate conductors

Industries

Patents Grantslast 30 patents

Information Patent Grant
Structure and process of integrated circuit having latch-up suppres...
- Patent number 11,961,769
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Hsiu Hsu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Self-aligned metal gate for multigate device and method of forming...
- Patent number 11,961,763
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS FinFET structures including work-function materials having dif...
- Patent number 11,961,768
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ya-Wen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an epitaxy region
- Patent number 11,955,547
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Jen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels and manufa...
- Patent number 11,955,384
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator device with partially recessed gate
- Patent number 11,948,977
- Issue date Apr 2, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure
- Patent number 11,942,376
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,942,552
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architecture having gate contacts
- Patent number 11,935,892
- Issue date Mar 19, 2024
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and methods for generating a circuit with high density ro...
- Patent number 11,923,297
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-An Lai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
3D semiconductor device and structure with bonding
- Patent number 11,923,230
- Issue date Mar 5, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated chip and method of forming thereof
- Patent number 11,923,411
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods of fabricating electronic devices using sepa...
- Patent number 11,915,983
- Issue date Feb 27, 2024
- APPLIED NOVEL DEVICES, INC.
- Leo Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide interlayer structure for nFET and pFET
- Patent number 11,916,128
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Min Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated chip with improved latch-up immunity
- Patent number 11,908,860
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for stacked vertical transistors
- Patent number 11,908,890
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,901,411
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with memory
- Patent number 11,901,210
- Issue date Feb 13, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a FinFET by implanting a dielectric with a...
- Patent number 11,901,455
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with low threshold voltage
- Patent number 11,901,241
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact isolation in a semiconductor
- Patent number 11,901,427
- Issue date Feb 13, 2024
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Architecture design and process for manufacturing monolithically in...
- Patent number 11,901,360
- Issue date Feb 13, 2024
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and methods of fabricating such devices
- Patent number 11,894,376
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Dae-Won Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 11,894,375
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gates and methods of forming thereof
- Patent number 11,894,277
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implantations for forming source/drain regions of different transis...
- Patent number 11,895,819
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dian-Sheg Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and method of manufacture
- Patent number 11,894,425
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yun-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Different Isolation Liners for Different Type FinFETs and Associate...
- Publication number 20240136222
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzung-Yi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY
- Publication number 20240128116
- Publication date Apr 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240120398
- Publication date Apr 11, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND...
- Publication number 20240120402
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Ni YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240120203
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Standard Cell Structure
- Publication number 20240113097
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS
- Publication number 20240112942
- Publication date Apr 4, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH PERFORMANCE MOSFETS HAVING VARYING CHANNEL STRUCTURES
- Publication number 20240113119
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tetsu Ohtou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- Publication number 20240113124
- Publication date Apr 4, 2024
- SOCIONEXT INC.
- Toshio HINO
- B82 - NANO-TECHNOLOGY
Information Patent Application
TIE OFF DEVICE
- Publication number 20240105726
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Lun Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY
- Publication number 20240105490
- Publication date Mar 28, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
Footing Removal in Cut-Metal Process
- Publication number 20240096707
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHO...
- Publication number 20240096894
- Publication date Mar 21, 2024
- Samsung Electronics Co., Ltd.
- Woo Cheol SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MELT ANNEAL SOURCE AND DRAIN REGIONS
- Publication number 20240088225
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240071834
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240063221
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- Kyoungwoo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D ISOLATION OF A SEGMENTATED 3D NANOSHEET CHANNEL REGION
- Publication number 20240063220
- Publication date Feb 22, 2024
- TOKYO ELECTRON LIMITED
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING
- Publication number 20240055291
- Publication date Feb 15, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...
- Publication number 20240047461
- Publication date Feb 8, 2024
- SONY CORPORATION
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE LAYOUT
- Publication number 20240047452
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20240047556
- Publication date Feb 8, 2024
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED METAL GATE FOR MULTIGATE DEVICE AND METHOD OF FORMING...
- Publication number 20240030066
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER LAYER
- Publication number 20240021481
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Wei TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240021479
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Te TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240014042
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMORPHIZATION AND REGROWTH OF SOURCE-DRAIN REGIONS FROM THE BOTTOM-...
- Publication number 20240006489
- Publication date Jan 4, 2024
- Intel Corporation
- Aaron LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PRODUCING A 3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH...
- Publication number 20230420283
- Publication date Dec 28, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
FLIP-FLOP WITH TRANSISTORS HAVING DIFFERENT THRESHOLD VOLTAGES, SEM...
- Publication number 20230421141
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xing Chao YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20230420545
- Publication date Dec 28, 2023
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
- Publication number 20230420515
- Publication date Dec 28, 2023
- Samsung Electronics Co., Ltd.
- Sungmin KIM
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the gate conductors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Structure and process of integrated circuit having latch-up suppres...

Self-aligned metal gate for multigate device and method of forming...

CMOS FinFET structures including work-function materials having dif...

Dual metal gate structure having portions of metal gate layers in c...

Semiconductor device including an epitaxy region

Stacked semiconductor device with nanostructure channels and manufa...

Heterogeneous metal line compositions for advanced integrated circu...

Silicon on insulator device with partially recessed gate

Trench contact structures for advanced integrated circuit structure...

Method for manufacturing semiconductor structure

Method of manufacturing a semiconductor device and a semiconductor...

Self-aligned gate endcap (SAGE) architecture having gate contacts

Apparatus and methods for generating a circuit with high density ro...

3D semiconductor device and structure with bonding

Integrated chip and method of forming thereof

Structures and methods of fabricating electronic devices using sepa...

Metal oxide interlayer structure for nFET and pFET

Integrated chip with improved latch-up immunity

Isolation structure for stacked vertical transistors

Semiconductor device and method

3D semiconductor device and structure with memory

Method of manufacturing a FinFET by implanting a dielectric with a...

Integrated circuit device with low threshold voltage

Gate contact isolation in a semiconductor

Architecture design and process for manufacturing monolithically in...

Integrated circuit devices and methods of fabricating such devices

Semiconductor structure and method of forming the same

Transistor gates and methods of forming thereof

Implantations for forming source/drain regions of different transis...

Semiconductor arrangement and method of manufacture

Patents Applicationslast 30 patents

Different Isolation Liners for Different Type FinFETs and Associate...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Integrated Standard Cell Structure

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS

HIGH PERFORMANCE MOSFETS HAVING VARYING CHANNEL STRUCTURES

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

TIE OFF DEVICE

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY

Footing Removal in Cut-Metal Process

SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHO...

MELT ANNEAL SOURCE AND DRAIN REGIONS

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE

3D ISOLATION OF A SEGMENTATED 3D NANOSHEET CHANNEL REGION

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING

SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...

SEMICONDUCTOR DEVICE LAYOUT

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

SELF-ALIGNED METAL GATE FOR MULTIGATE DEVICE AND METHOD OF FORMING...

SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER LAYER

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

AMORPHIZATION AND REGROWTH OF SOURCE-DRAIN REGIONS FROM THE BOTTOM-...

METHODS FOR PRODUCING A 3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH...

FLIP-FLOP WITH TRANSISTORS HAVING DIFFERENT THRESHOLD VOLTAGES, SEM...

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE