with a particular manufacturing method of the gate insulating layers

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H01L21/823857

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/823857with a particular manufacturing method of the gate insulating layers

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for semiconductor devices and methods of forming the same
- Patent number 12,218,209
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 12,218,013
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,211,753
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for forming metal gate electrodes for transistors
- Patent number 12,205,819
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for tuning threshold voltage
- Patent number 12,205,850
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing semiconductor...
- Patent number 12,191,142
- Issue date Jan 7, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Kang You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,191,144
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yi Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ribbon or wire transistor stack with selective dipole threshold vol...
- Patent number 12,183,739
- Issue date Dec 31, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor having conformal and non-conformal gate...
- Patent number 12,170,321
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,167,594
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Chin Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate structure and methods thereof
- Patent number 12,166,104
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gates with layers for transistor threshold voltage tuning and...
- Patent number 12,154,964
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- An-Hung Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with multiple threshold voltage offerings...
- Patent number 12,142,640
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shan-Mei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost, high performance analog metal oxide semiconductor transistor
- Patent number 12,136,625
- Issue date Nov 5, 2024
- Texas Instruments Incorporated
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 12,136,659
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices and semiconductor dev...
- Patent number 12,132,051
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated dipole region for transistor
- Patent number 12,112,951
- Issue date Oct 8, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS and PMOS transistor gates with hafnium oxide layers and lantha...
- Patent number 12,107,015
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor circuits including fringeless transistors and method of...
- Patent number 12,094,944
- Issue date Sep 17, 2024
- SanDisk Technologies LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of fabricating the same
- Patent number 12,096,610
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Hee Bum Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,087,637
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple patterning gate scheme for nanosheet rule scaling
- Patent number 12,087,771
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell manufacturing
- Patent number 12,089,390
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in transistors and method of forming same
- Patent number 12,087,587
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method
- Patent number 12,074,207
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR
- Publication number 20250031445
- Publication date Jan 23, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Volume-Less Dipole Incorporation into CFET Having Common Gate
- Publication number 20250022879
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Jui Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DIPOLE REGION FOR TRANSISTOR
- Publication number 20250006499
- Publication date Jan 2, 2025
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-VT SOLUTION FOR BOTTOM AND TOP TIER DEVICE
- Publication number 20240413152
- Publication date Dec 12, 2024
- TAIWAN SEMICODUCTOR MANUFACTURING CO., LTD.
- Hsueh-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-TEMPERATURE IMPLANT FOR GATE-ALL-AROUND DEVICES
- Publication number 20240404887
- Publication date Dec 5, 2024
- Applied Materials, Inc.
- Yan ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGE OFFERINGS...
- Publication number 20240387639
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shan-Mei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHOD
- Publication number 20240387676
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATES AND METHODS OF FORMING THE SAME
- Publication number 20240387682
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- An-Hung Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE PATTERNING GATE SCHEME FOR NANOSHEET RULE SCALING
- Publication number 20240387538
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lung-Kun CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEV...
- Publication number 20240371878
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240363424
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME
- Publication number 20240363351
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...
- Publication number 20240363442
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cell Manufacturing
- Publication number 20240365526
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-THRESHOLD VOLTAGE INTEGRATION SCHEME FOR SEMICONDUCTOR DEVICES
- Publication number 20240363723
- Publication date Oct 31, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING BOTH GATE-ALL-AROUND DEVICES AND PLA...
- Publication number 20240355935
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND METHODS THEREOF
- Publication number 20240355625
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...
- Publication number 20240347606
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT
- Publication number 20240347388
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Sheng CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYERS
- Publication number 20240347538
- Publication date Oct 17, 2024
- SK HYNIX INC.
- Young Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INPUT/OUTPUT SEMICONDUCTOR DEVICES
- Publication number 20240339456
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20240332399
- Publication date Oct 3, 2024
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20240332090
- Publication date Oct 3, 2024
- Samsung Electronics Co., Ltd.
- Ju Youn KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE PROVIDING MULTIPLE THRESHOLD VOLTAGES AND METHODS OF MAKING...
- Publication number 20240332382
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yung-Hsiang Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240322013
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Patterning for Stacked Device Structure
- Publication number 20240321640
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Hua Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE TUNING USING A MULTIPLE DIPOLE LOOP PROCESS FOR C...
- Publication number 20240321646
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Ho Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FABRICATION METHODS AND STRUCTURES THEREOF
- Publication number 20240312845
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE PATTERNING FOR STACKED DEVICE STRUCTURE USING SELF-ASSEMBLED M...
- Publication number 20240312846
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che Chi Shih
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the gate insulating layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three-dimensional semiconductor device and method of fabricating th...

Contacts for semiconductor devices and methods of forming the same

Gate structures for semiconductor devices

Semiconductor device

Method and device for forming metal gate electrodes for transistors

Gate structures for tuning threshold voltage

Gate line plug structures for advanced integrated circuit structure...

Plugs for interconnect lines for advanced integrated circuit struct...

Semiconductor structure and method for manufacturing semiconductor...

Semiconductor device and manufacturing method thereof

Ribbon or wire transistor stack with selective dipole threshold vol...

Gate-all-around device with trimmed channel and dipoled dielectric...

Fin field effect transistor having conformal and non-conformal gate...

Semiconductor device and manufacturing method thereof

Gate structure and methods thereof

Metal gates with layers for transistor threshold voltage tuning and...

Semiconductor structures with multiple threshold voltage offerings...

Contact over active gate structures for advanced integrated circuit...

Low cost, high performance analog metal oxide semiconductor transistor

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Method of manufacturing semiconductor devices and semiconductor dev...

Integrated dipole region for transistor

NMOS and PMOS transistor gates with hafnium oxide layers and lantha...

Transistor circuits including fringeless transistors and method of...

Semiconductor memory device and method of fabricating the same

Semiconductor device and method of manufacture

Multiple patterning gate scheme for nanosheet rule scaling

Cell manufacturing

Gate structures in transistors and method of forming same

Gate structure and method

Patents Applicationslast 30 patents

LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR

Volume-Less Dipole Incorporation into CFET Having Common Gate

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

INTEGRATED DIPOLE REGION FOR TRANSISTOR

MULTI-VT SOLUTION FOR BOTTOM AND TOP TIER DEVICE

HIGH-TEMPERATURE IMPLANT FOR GATE-ALL-AROUND DEVICES

SEMICONDUCTOR STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGE OFFERINGS...

GATE STRUCTURE AND METHOD

METAL GATES AND METHODS OF FORMING THE SAME

MULTIPLE PATTERNING GATE SCHEME FOR NANOSHEET RULE SCALING

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEV...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME

NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...

Cell Manufacturing

MULTI-THRESHOLD VOLTAGE INTEGRATION SCHEME FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE HAVING BOTH GATE-ALL-AROUND DEVICES AND PLA...

SEMICONDUCTOR STRUCTURES AND METHODS THEREOF

Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...

SEMICONDUCTOR INTEGRATED CIRCUIT

SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYERS

INPUT/OUTPUT SEMICONDUCTOR DEVICES

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

DEVICE PROVIDING MULTIPLE THRESHOLD VOLTAGES AND METHODS OF MAKING...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Gate Patterning for Stacked Device Structure

THRESHOLD VOLTAGE TUNING USING A MULTIPLE DIPOLE LOOP PROCESS FOR C...

SEMICONDUCTOR DEVICE FABRICATION METHODS AND STRUCTURES THEREOF

GATE PATTERNING FOR STACKED DEVICE STRUCTURE USING SELF-ASSEMBLED M...