with a terraced structure

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H01S5/2238

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HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

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H01S5/2238with a terraced structure

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Optical semiconductor element and method of manufacturing the same
- Patent number 11,056,341
- Issue date Jul 6, 2021
- Sumitomo Electric Industries, Ltd.
- Takehiko Kikuchi
- G02 - OPTICS
Information Patent Grant
Semiconductor laser element
- Patent number 10,707,651
- Issue date Jul 7, 2020
- SHARP KABUSHIKI KAISHA
- Yasuo Kan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser diode and method of manufacturing laser diode
- Patent number 10,069,281
- Issue date Sep 4, 2018
- Mitsubishi Electric Corporation
- Kazuhiro Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser diode and method of manufacturing laser diode
- Patent number 9,923,336
- Issue date Mar 20, 2018
- Mitsubishi Electric Corporation
- Kazuhiro Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser, method for manufacturing semiconductor laser,...
- Patent number 7,899,102
- Issue date Mar 1, 2011
- Sony Corporation
- Toshiaki Obata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser and method of production thereof
- Patent number 6,826,216
- Issue date Nov 30, 2004
- Sony Corporation
- Jugo Mitomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser diode and fabrication process thereof
- Patent number 6,539,040
- Issue date Mar 25, 2003
- Fujitsu Quantum Devices Limited
- Chikashi Anayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser and method of manufacturing the same
- Patent number 6,501,090
- Issue date Dec 31, 2002
- Fujitsu Quantum Devices Limited
- Akira Furuya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device
- Patent number 6,118,799
- Issue date Sep 12, 2000
- Mitsui Chemicals, Inc.
- Atsushi Okubo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser with light emitting slant plane and method of m...
- Patent number 5,862,166
- Issue date Jan 19, 1999
- Fujitsu Limited
- Chikashi Anayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for forming semiconductor laser emitting light from slant plane
- Patent number 5,814,531
- Issue date Sep 29, 1998
- Fujitsu Limited
- Chikashi Anayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stepped substrate semiconductor laser for emitting light at slant p...
- Patent number 5,799,027
- Issue date Aug 25, 1998
- Fujitsu Limited
- Chikashi Anayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and its manufacture utilizing crystal orientat...
- Patent number 5,783,845
- Issue date Jul 21, 1998
- Fujitsu Limited
- Makoto Kondo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stepped substrate semiconductor laser for emitting light at slant p...
- Patent number 5,684,818
- Issue date Nov 4, 1997
- Fujitsu Limited
- Chikashi Anayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making a semiconductor device utilizing crystal orientati...
- Patent number 5,668,048
- Issue date Sep 16, 1997
- Fujitsu Limited
- Makoto Kondo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stripe laser diode having an improved efficiency for current confin...
- Patent number 5,621,748
- Issue date Apr 15, 1997
- Fujitsu Limited
- Makoto Kondo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor laser
- Patent number 5,568,500
- Issue date Oct 22, 1996
- Fujitsu Limited
- Akira Furuya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device with compound semiconductor layer
- Patent number 5,488,233
- Issue date Jan 30, 1996
- Kabushiki Kaisha Toshiba
- Masayuki Ishikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of growing epitaxial layers
- Patent number 5,476,811
- Issue date Dec 19, 1995
- Fujitsu Limited
- Toshio Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stripe laser diode having an improved efficiency for current confin...
- Patent number 5,436,194
- Issue date Jul 25, 1995
- Fujitsu Limited
- Makoto Kondo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor laser of patterned-substrate type and structure thereof
- Patent number 5,375,136
- Issue date Dec 20, 1994
- Fujitsu Limited
- Chikashi Anayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor laser of patterned-substrate...
- Patent number 5,336,635
- Issue date Aug 9, 1994
- Fujitsu Limited
- Chikashi Anayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device having substantially planar sur...
- Patent number 5,291,033
- Issue date Mar 1, 1994
- Eastman Kodak Company
- Mitsukata Morishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum wire laser
- Patent number 5,280,493
- Issue date Jan 18, 1994
- Sharp Kabushiki Kaisha
- Haruhisa Takiguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Low gloss polycarbonate/ABS blends obtained by using a hydroxy func...
- Patent number 5,236,990
- Issue date Aug 17, 1993
- General Electric Company
- Shripathy Vilasagar
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Grant
Method for the epitaxial growth of a semiconductor structure
- Patent number 5,037,776
- Issue date Aug 6, 1991
- International Business Machines Corporation
- Yvan Galeuchet
- B82 - NANO-TECHNOLOGY
Information Patent Grant
A stripe-shaped heterojunction laser with unique current confinement
- Patent number 5,010,556
- Issue date Apr 23, 1991
- Omron Tateisi Electronics Co.
- Koichi Imanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus
- Patent number 4,941,024
- Issue date Jul 10, 1990
- Sharp Kabushiki Kaisha
- Toshiro Hayakawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser having a lateral p-n junction utilizing incline...
- Patent number 4,932,033
- Issue date Jun 5, 1990
- Canon Kabushiki Kaisha
- Seiichi Miyazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a stripe-shaped heterojunction laser with u...
- Patent number 4,839,307
- Issue date Jun 13, 1989
- Omron Tateisi Electronics Co.
- Koichi Imanaka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED BURIED HETERO STRUCTURE LASER STRUCTURES AND INTERPOSER
- Publication number 20230258884
- Publication date Aug 17, 2023
- POET Technologies, Inc.
- Suresh Venkatesan
- G02 - OPTICS
Information Patent Application
OPTICAL SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200098567
- Publication date Mar 26, 2020
- Sumitomo Electric Industries, Ltd.
- Takehiko Kikuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER ELEMENT
- Publication number 20190379179
- Publication date Dec 12, 2019
- Sharp Kabushiki Kaisha
- YASUO KAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODE AND METHOD OF MANUFACTURING LASER DIODE
- Publication number 20180109077
- Publication date Apr 19, 2018
- Mitsubishi Electric Corporation
- Kazuhiro MAEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODE AND METHOD OF MANUFACTURING LASER DIODE
- Publication number 20170358902
- Publication date Dec 14, 2017
- Mitsubishi Electric Corporation
- Kazuhiro MAEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR LASER
- Publication number 20110058586
- Publication date Mar 10, 2011
- Toshiyuki Takizawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LASER, METHOD FOR MANUFACTURING SEMICONDUCTOR LASER,...
- Publication number 20090316744
- Publication date Dec 24, 2009
- SONY CORPORATION
- Toshiyuki OBATA
- B82 - NANO-TECHNOLOGY
Information Patent Application
Low voltage defect super high efficiency diode sources
- Publication number 20050152424
- Publication date Jul 14, 2005
- Viktor Borisovitch Khalfin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor laser and method of manufacturing the same
- Publication number 20020094677
- Publication date Jul 18, 2002
- FUJITSU QUANTUM DEVICES LIMITED
- Akira Furuya
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor laser and method of production thereof
- Publication number 20020080835
- Publication date Jun 27, 2002
- Jugo Mitomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laser diode and fabrication process thereof
- Publication number 20020027935
- Publication date Mar 7, 2002
- FUJITSU QUANTUM DEVICES LIMITED
- Chikashi Anayama
- B82 - NANO-TECHNOLOGY

with a terraced structure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Optical semiconductor element and method of manufacturing the same

Semiconductor laser element

Laser diode and method of manufacturing laser diode

Laser diode and method of manufacturing laser diode

Semiconductor laser, method for manufacturing semiconductor laser,...

Semiconductor laser and method of production thereof

Laser diode and fabrication process thereof

Semiconductor laser and method of manufacturing the same

Semiconductor laser device

Semiconductor laser with light emitting slant plane and method of m...

Method for forming semiconductor laser emitting light from slant plane

Stepped substrate semiconductor laser for emitting light at slant p...

Semiconductor device and its manufacture utilizing crystal orientat...

Stepped substrate semiconductor laser for emitting light at slant p...

Method of making a semiconductor device utilizing crystal orientati...

Stripe laser diode having an improved efficiency for current confin...

Semiconductor laser

Semiconductor light-emitting device with compound semiconductor layer

Method of growing epitaxial layers

Stripe laser diode having an improved efficiency for current confin...

Semiconductor laser of patterned-substrate type and structure thereof

Manufacturing method of semiconductor laser of patterned-substrate...

Semiconductor light-emitting device having substantially planar sur...

Quantum wire laser

Low gloss polycarbonate/ABS blends obtained by using a hydroxy func...

Method for the epitaxial growth of a semiconductor structure

A stripe-shaped heterojunction laser with unique current confinement

Semiconductor apparatus

Semiconductor laser having a lateral p-n junction utilizing incline...

Method of manufacturing a stripe-shaped heterojunction laser with u...

Patents Applicationslast 30 patents

SELF-ALIGNED BURIED HETERO STRUCTURE LASER STRUCTURES AND INTERPOSER

OPTICAL SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR LASER ELEMENT

LASER DIODE AND METHOD OF MANUFACTURING LASER DIODE

LASER DIODE AND METHOD OF MANUFACTURING LASER DIODE

NITRIDE SEMICONDUCTOR LASER

SEMICONDUCTOR LASER, METHOD FOR MANUFACTURING SEMICONDUCTOR LASER,...

Low voltage defect super high efficiency diode sources

Semiconductor laser and method of manufacturing the same

Semiconductor laser and method of production thereof

Laser diode and fabrication process thereof