with a transverse junction stripe [TJS] structure

Industry

CPC
H01S5/2203

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Parent Industries

HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

Current Industry

H01S5/2203with a transverse junction stripe [TJS] structure

Industries

Patents Grantslast 30 patents

Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 11,728,624
- Issue date Aug 15, 2023
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 11,271,370
- Issue date Mar 8, 2022
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 10,727,647
- Issue date Jul 28, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium and nitrogen containing laser diode dazzling devices and me...
- Patent number 10,205,300
- Issue date Feb 12, 2019
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 10,193,307
- Issue date Jan 29, 2019
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 10,008,827
- Issue date Jun 26, 2018
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light emitting element
- Patent number 9,787,059
- Issue date Oct 10, 2017
- Stanley Electric Co., Ltd.
- Komei Tazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 9,270,083
- Issue date Feb 23, 2016
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 9,036,672
- Issue date May 19, 2015
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 8,731,017
- Issue date May 20, 2014
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
VCSEL system with transverse P/N junction
- Patent number 7,502,401
- Issue date Mar 10, 2009
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Jeffrey N. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device with a current non-injection region near...
- Patent number 6,888,866
- Issue date May 3, 2005
- Fuji Photo Film Co., Ltd.
- Toshiaki Kuniyasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the directed modulation of the composition or doping of...
- Patent number 5,294,564
- Issue date Mar 15, 1994
- Thomson-CSF
- Leonidas Karapiperis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making P-type compound semiconductor employing trimethylg...
- Patent number 5,173,445
- Issue date Dec 22, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Koji Ando
- C30 - CRYSTAL GROWTH
Information Patent Grant
Lateral heterojunction bipolar transistor (LHBT) and suitability th...
- Patent number 5,164,797
- Issue date Nov 17, 1992
- Xerox Corporation
- Robert L. Thornton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor laser devices
- Patent number 5,145,807
- Issue date Sep 8, 1992
- Mitsubishi Kasei Corporation
- Kenji Shimoyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multiwavelength LED and laser diode optical source
- Patent number 5,138,624
- Issue date Aug 11, 1992
- The Boeing Company
- Chi-Shain Hong
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor optical element
- Patent number 5,107,514
- Issue date Apr 21, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Katsuhiko Goto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing semiconductor devices
- Patent number 5,084,410
- Issue date Jan 28, 1992
- Kabushiki Kaisha Toshiba
- Kazuhiro Eguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor Laser
- Patent number 5,073,895
- Issue date Dec 17, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Etsuji Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic and optoelectronic laser devices utilizing light hole pr...
- Patent number 4,999,682
- Issue date Mar 12, 1991
- Regents of the University of Minnesota
- Jingming Xu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Lateral heterojunction bipolar transistor (LHBT) and suitability th...
- Patent number 4,987,468
- Issue date Jan 22, 1991
- Xerox Corporation
- Robert L. Thornton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser devices
- Patent number 4,969,151
- Issue date Nov 6, 1990
- Mitsubishi Kasei Corporation
- Kenji Shimoyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Electronic and optoelectric devices utilizing light hole properties
- Patent number 4,899,201
- Issue date Feb 6, 1990
- Regents of the University of Minnesota
- Jingming Xu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor optical amplifying element
- Patent number 4,897,845
- Issue date Jan 30, 1990
- Kokusai Denshin Denwa Kabushiki Kaisha
- Katsuyuki Utaka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transverse junction stripe laser
- Patent number 4,805,179
- Issue date Feb 14, 1989
- International Business Machines Corporation
- Christoph S. Harder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 4,791,647
- Issue date Dec 13, 1988
- NEC Corporation
- Shigeo Sugou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diode lasers
- Patent number 4,663,761
- Issue date May 5, 1987
- The General Electric Company, p.l.c.
- Joseph A. Barnard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device
- Patent number 4,630,083
- Issue date Dec 16, 1986
- Fujitsu Limited
- Shigenobu Yamakoshi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transverse junction stripe laser with steps at the end faces
- Patent number 4,592,061
- Issue date May 27, 1986
- Mitsubishi Denki Kabushiki Kaisha
- Hisao Kumabe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20230344200
- Publication date Oct 26, 2023
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20220173575
- Publication date Jun 2, 2022
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20200335945
- Publication date Oct 22, 2020
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20190115726
- Publication date Apr 18, 2019
- Acorn Technologies, Inc.
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20180062352
- Publication date Mar 1, 2018
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING ELEMENT
- Publication number 20170110851
- Publication date Apr 20, 2017
- Stanley Electric Co., Ltd
- Komei TAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20160211649
- Publication date Jul 21, 2016
- Acorn Technologies, Inc.
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tensile Strained Semiconductor Photon Emission and Detection Device...
- Publication number 20150249320
- Publication date Sep 3, 2015
- Acorn Technologies, Inc.
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tensile Strained Semiconductor Photon Emission and Detection Device...
- Publication number 20140369372
- Publication date Dec 18, 2014
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20130039664
- Publication date Feb 14, 2013
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Application
VCSEL system with transverse P/N junction
- Publication number 20070019697
- Publication date Jan 25, 2007
- Jeffrey N. Miller
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor laser device with a current non-injection region near...
- Publication number 20050164420
- Publication date Jul 28, 2005
- Fuji Photo Film Co., Ltd.
- Toshiaki Kuniyasu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor laser device with a current non-injection region near...
- Publication number 20020061044
- Publication date May 23, 2002
- Fuji Photo Film Co., Ltd.
- Toshiaki Kuniyasu
- B82 - NANO-TECHNOLOGY

with a transverse junction stripe [TJS] structure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Tensile strained semiconductor photon emission and detection device...

Tensile strained semiconductor photon emission and detection device...

Tensile strained semiconductor photon emission and detection device...

Gallium and nitrogen containing laser diode dazzling devices and me...

Tensile strained semiconductor photon emission and detection device...

Tensile strained semiconductor photon emission and detection device...

Semiconductor light emitting element

Tensile strained semiconductor photon emission and detection device...

Tensile strained semiconductor photon emission and detection device...

Tensile strained semiconductor photon emission and detection device...

VCSEL system with transverse P/N junction

Semiconductor laser device with a current non-injection region near...

Method for the directed modulation of the composition or doping of...

Method of making P-type compound semiconductor employing trimethylg...

Lateral heterojunction bipolar transistor (LHBT) and suitability th...

Method of making semiconductor laser devices

Multiwavelength LED and laser diode optical source

Semiconductor optical element

Method of manufacturing semiconductor devices

Semiconductor Laser

Electronic and optoelectronic laser devices utilizing light hole pr...

Lateral heterojunction bipolar transistor (LHBT) and suitability th...

Semiconductor laser devices

Electronic and optoelectric devices utilizing light hole properties

Semiconductor optical amplifying element

Transverse junction stripe laser

Semiconductor laser

Semiconductor diode lasers

Light-emitting semiconductor device

Transverse junction stripe laser with steps at the end faces

Patents Applicationslast 30 patents

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

SEMICONDUCTOR LIGHT EMITTING ELEMENT

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

Tensile Strained Semiconductor Photon Emission and Detection Device...

Tensile Strained Semiconductor Photon Emission and Detection Device...

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

VCSEL system with transverse P/N junction

Semiconductor laser device with a current non-injection region near...

Semiconductor laser device with a current non-injection region near...