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H01L21/28185

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/28185with a treatment

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,154,986
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with treated interfacial layer on silicon germ...
- Patent number 12,148,843
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning threshold voltage through meta stable plasma treatment
- Patent number 12,148,620
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming ion sensors
- Patent number 12,140,557
- Issue date Nov 12, 2024
- Life Technologies Corporation
- Phil Waggoner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 12,136,659
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,125,706
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with reduced defect and methods of forming same
- Patent number 12,125,892
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated dipole region for transistor
- Patent number 12,112,951
- Issue date Oct 8, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous silicon-based scavenging and sealing EOT
- Patent number 12,100,595
- Issue date Sep 24, 2024
- Applied Materials, Inc.
- Yong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in transistors and method of forming same
- Patent number 12,087,587
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,068,198
- Issue date Aug 20, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for manufacturing a trench power MOSFET
- Patent number 12,062,717
- Issue date Aug 13, 2024
- SK keyfoundry Inc.
- Hyun Kwang Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and methods thereof
- Patent number 12,040,191
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing substrate
- Patent number 12,024,777
- Issue date Jul 2, 2024
- Wonik IPS Co., Ltd.
- Dae Seong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dipole-engineered high-k gate dielectric and method forming same
- Patent number 12,020,941
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k gate dielectric and method forming same
- Patent number 12,020,991
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including transistors and a method of manufactur...
- Patent number 11,973,142
- Issue date Apr 30, 2024
- Samsung Electronics Co., Ltd.
- Sangwook Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for integrating gate dielectric layers of diff...
- Patent number 11,961,740
- Issue date Apr 16, 2024
- Shanghai Huali Integrated Circuit Corporation
- Lian Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatments to enhance material structures
- Patent number 11,961,734
- Issue date Apr 16, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatments to enhance material structures
- Patent number 11,955,332
- Issue date Apr 9, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having work function metal stack
- Patent number 11,948,800
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,948,994
- Issue date Apr 2, 2024
- Samsung Electronics Co., Ltd.
- Byounghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,935,939
- Issue date Mar 19, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,923,428
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chi Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-protective layer formed on high-K dielectric layer
- Patent number 11,923,201
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping layer for a hafnium oxide-based ferroelectric material
- Patent number 11,923,189
- Issue date Mar 5, 2024
- Lam Research Corporation
- Hyungsuk Alexander Yoon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor devices
- Patent number 11,901,421
- Issue date Feb 13, 2024
- Samsung Electronics Co., Ltd.
- Hokyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with nanosheet transistors with robust gate oxide
- Patent number 11,869,955
- Issue date Jan 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Ni Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,862,468
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240404884
- Publication date Dec 5, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE DIELECTRIC
- Publication number 20240395896
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE HAVING GATE DIELECTRIC LAYER
- Publication number 20240395564
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Ming CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE THRESHOLD VOLTAGE IMPLEMENTATION THROUGH LANTHANUM INCORPO...
- Publication number 20240387277
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Hung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387728
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CHANNEL TEMPERING
- Publication number 20240387745
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNING THRESHOLD VOLTAGE THROUGH META STABLE PLASMA TREATMENT
- Publication number 20240387178
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF FORMING SAME
- Publication number 20240379853
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379366
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DOPING HIGH-K METAL GATES FOR TUNING THRESHOLD VOLTAGES
- Publication number 20240379365
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Feng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH REDUCED DEFECT AND METHODS FORMING SAME
- Publication number 20240371964
- Publication date Nov 7, 2024
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME
- Publication number 20240363351
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND METHODS THEREOF
- Publication number 20240355625
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dipole-Engineered High-K Gate Dielectric and Method Forming Same
- Publication number 20240304449
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K Gate Dielectric and Method Forming Same
- Publication number 20240297084
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING TRANSISTORS AND A METHOD OF MANUFACTUR...
- Publication number 20240274714
- Publication date Aug 15, 2024
- Samsung Electronics Co., Ltd.
- Sangwook Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TREATMENTS TO ENHANCE MATERIAL STRUCTURES
- Publication number 20240266163
- Publication date Aug 8, 2024
- Applied Materials, Inc.
- Srinivas GANDIKOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240250144
- Publication date Jul 25, 2024
- Samsung Electronics Co., Ltd.
- Byounghoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING WORK FUNCTION METAL STACK
- Publication number 20240203738
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-PROTECTIVE LAYER FORMED ON HIGH-K DIELECTRIC LAYER
- Publication number 20240203740
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240186390
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chi PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240170341
- Publication date May 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240162307
- Publication date May 16, 2024
- Samsung Electronics Co., Ltd.
- Hokyun AN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE DIELECTRIC
- Publication number 20240154019
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR...
- Publication number 20240079472
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-YEN PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structures For Semiconductor Devices
- Publication number 20240071835
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TUNABLE THRESHOLD VOLTAGE AND METHOD FOR...
- Publication number 20240021709
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Device by Driving Hydrogen into a...
- Publication number 20230386847
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hongfa LUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20230387299
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Negative-Capacitance and Ferroelectric Field-Effect Transistor (NCF...
- Publication number 20230378310
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS

with a treatment

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gate-all-around device with trimmed channel and dipoled dielectric...

Semiconductor device and method

Semiconductor device with treated interfacial layer on silicon germ...

Tuning threshold voltage through meta stable plasma treatment

Method of forming ion sensors

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Semiconductor device and method of manufacture

Transistors with reduced defect and methods of forming same

Integrated dipole region for transistor

Amorphous silicon-based scavenging and sealing EOT

Gate structures in transistors and method of forming same

Method for manufacturing semiconductor device

Structure and method for manufacturing a trench power MOSFET

Semiconductor structures and methods thereof

Method of processing substrate

Dipole-engineered high-k gate dielectric and method forming same

High-k gate dielectric and method forming same

Integrated circuit including transistors and a method of manufactur...

Manufacturing method for integrating gate dielectric layers of diff...

Treatments to enhance material structures

Treatments to enhance material structures

Semiconductor device having work function metal stack

Semiconductor device and method of fabricating the same

Semiconductor device having buried gate structure and method for fa...

Fin field-effect transistor and method of forming the same

Self-protective layer formed on high-K dielectric layer

Capping layer for a hafnium oxide-based ferroelectric material

Semiconductor devices

Integrated circuit with nanosheet transistors with robust gate oxide

Semiconductor device and method

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

HIGH-K GATE DIELECTRIC

SEMICONDUCTOR DEVICE STRUCTURE HAVING GATE DIELECTRIC LAYER

MULTIPLE THRESHOLD VOLTAGE IMPLEMENTATION THROUGH LANTHANUM INCORPO...

SEMICONDUCTOR DEVICE AND METHOD

SILICON CHANNEL TEMPERING

TUNING THRESHOLD VOLTAGE THROUGH META STABLE PLASMA TREATMENT

FINFET DEVICE AND METHOD OF FORMING SAME

SEMICONDUCTOR DEVICES

METHODS FOR DOPING HIGH-K METAL GATES FOR TUNING THRESHOLD VOLTAGES

TRANSISTORS WITH REDUCED DEFECT AND METHODS FORMING SAME

GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME

SEMICONDUCTOR STRUCTURES AND METHODS THEREOF

Dipole-Engineered High-K Gate Dielectric and Method Forming Same

High-K Gate Dielectric and Method Forming Same

INTEGRATED CIRCUIT INCLUDING TRANSISTORS AND A METHOD OF MANUFACTUR...

TREATMENTS TO ENHANCE MATERIAL STRUCTURES

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE HAVING WORK FUNCTION METAL STACK

SELF-PROTECTIVE LAYER FORMED ON HIGH-K DIELECTRIC LAYER

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

SEMICONDUCTOR DEVICES

HIGH-K GATE DIELECTRIC

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR...

Gate Structures For Semiconductor Devices

SEMICONDUCTOR DEVICE WITH TUNABLE THRESHOLD VOLTAGE AND METHOD FOR...

Method of Forming a Semiconductor Device by Driving Hydrogen into a...

SEMICONDUCTOR DEVICE AND METHOD

Negative-Capacitance and Ferroelectric Field-Effect Transistor (NCF...