with addition of doping material

Industry

CPC
C30B13/10

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B13/00Single-crystal growth by zone-melting Refining by zone-melting

Current Industry

C30B13/10with addition of doping material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
GA2O3-based single crystal substrate, and production method therefor
- Patent number 10,633,761
- Issue date Apr 28, 2020
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Synthesis and processing of novel phase of carbon (Q-carbon)
- Patent number 10,586,702
- Issue date Mar 10, 2020
- North Carolina State University
- Jagdish Narayan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Synthesis and processing of Q-carbon, graphene, and diamond
- Patent number 10,566,193
- Issue date Feb 18, 2020
- North Carolina State University
- Jagdish Narayan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Synthesis and processing of novel phase of boron nitride (Q-BN)
- Patent number 10,529,564
- Issue date Jan 7, 2020
- North Carolina State University
- Jagdish Narayan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for tailoring the dopant profile in a laser crystal using zo...
- Patent number 10,273,595
- Issue date Apr 30, 2019
- Raytheon Company
- Robert W. Byren
- C30 - CRYSTAL GROWTH
Information Patent Grant
Conversion of carbon into n-type and p-type doped diamond and struc...
- Patent number 10,196,754
- Issue date Feb 5, 2019
- North Carolina State University
- Jagdish Narayan
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for manufacturing highly pure silicon, highly pure silicon o...
- Patent number 10,167,199
- Issue date Jan 1, 2019
- Silicio Ferrosolar S.L.
- Shinji Tokumaru
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Ga2O3-based single crystal substrate, and production method therefor
- Patent number 10,161,058
- Issue date Dec 25, 2018
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for tailoring the dopant profile in a laser crystal using zo...
- Patent number 9,926,644
- Issue date Mar 27, 2018
- Raytheon Company
- Robert W. Byren
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a Ti:sapphire crystal fiber by laser-heated...
- Patent number 9,444,216
- Issue date Sep 13, 2016
- NATIONAL TAIWAN UNIVERSITY
- Kuang-Yu Hsu
- G02 - OPTICS
Information Patent Grant
Method for producing a silicon single crystal
- Patent number 9,410,262
- Issue date Aug 9, 2016
- Siltronic AG
- Josef Lobmeyer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Stabilized thallium bromide radiation detectors and methods of maki...
- Patent number 9,194,958
- Issue date Nov 24, 2015
- Lawrence Livermore National Security, LLC
- Cedric Rocha Leao
- G01 - MEASURING TESTING
Information Patent Grant
Ti: sapphire crystal fiber, manufacturing method thereof, and wide...
- Patent number 9,153,933
- Issue date Oct 6, 2015
- NATIONAL TAIWAN UNIVERSITY
- Kuang-Yu Hsu
- G02 - OPTICS
Information Patent Grant
Germanium enriched silicon material for making solar cells
- Patent number 8,758,507
- Issue date Jun 24, 2014
- Silicor Materials Inc.
- Fritz G. Kirscht
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Ti: sapphire crystal fiber, manufacturing method thereof, and wide...
- Patent number 8,625,948
- Issue date Jan 7, 2014
- NATIONAL TAIWAN UNIVERSITY
- Kuang-Yu Hsu
- G02 - OPTICS
Information Patent Grant
Process and apparatus for producing a single crystal of semiconduct...
- Patent number 8,221,550
- Issue date Jul 17, 2012
- Siltronic AG
- Wilfried von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Deep-eutectic melt growth of nitride crystals
- Patent number 8,088,220
- Issue date Jan 3, 2012
- Crystal IS, Inc.
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Grant
Germanium-enriched silicon material for making solar cells
- Patent number 7,887,633
- Issue date Feb 15, 2011
- Calisolar, Inc.
- Fritz Kirscht
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Process and apparatus for producing a single crystal of semiconduct...
- Patent number 7,655,089
- Issue date Feb 2, 2010
- Siltronic AG
- Wilfried von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Doped semiconductor wafer of float zone pulled semiconductor materi...
- Patent number 7,025,827
- Issue date Apr 11, 2006
- Siltronic AG
- Rolf Knobel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating a semiconductor epitaxial wafer having doped...
- Patent number 6,776,841
- Issue date Aug 17, 2004
- Hynix Semiconductor Inc.
- Seung Ho Pyi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of producing doped semiconductors
- Patent number 6,350,315
- Issue date Feb 26, 2002
- SEH America, Inc.
- Douglas G. Anderson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods of producing doped semiconductors
- Patent number 6,171,389
- Issue date Jan 9, 2001
- SEH America, Inc.
- Douglas G. Anderson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and apparatus for producing silicon ingots having high oxyg...
- Patent number 5,089,082
- Issue date Feb 18, 1992
- Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
- Peter Dreier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for doping semiconductor rods with solid dopants
- Patent number 4,696,716
- Issue date Sep 29, 1987
- Siemens Aktiengesellschaft
- Wolfgang Keller
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for controlled doping of silicon crystals by improved float...
- Patent number 4,556,448
- Issue date Dec 3, 1985
- International Business Machines Corporation
- Kyong M. Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor devices by laser enhanced diffusion
- Patent number 4,343,832
- Issue date Aug 10, 1982
- Motorola, Inc.
- James N. Smith
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for controlled doping semiconductor material with highly vol...
- Patent number 4,270,972
- Issue date Jun 2, 1981
- Rockwell International Corporation
- Allen G. Crouse
- C30 - CRYSTAL GROWTH
Information Patent Grant
Photo-induced temperature gradient zone melting
- Patent number 4,257,824
- Issue date Mar 24, 1981
- Bell Telephone Laboratories, Incorporated
- Kenneth A. Jackson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing an InSb thin film element
- Patent number 4,177,298
- Issue date Dec 4, 1979
- Hitachi, Ltd.
- Junji Shigeta
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Method of Producing a Single-Crystal
- Publication number 20210222320
- Publication date Jul 22, 2021
- Crystal Systems Corporation
- Isamu Shindo
- C30 - CRYSTAL GROWTH
Information Patent Application
GA2O3-BASED SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR
- Publication number 20190062942
- Publication date Feb 28, 2019
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Single-Crystal Production Equipment
- Publication number 20190032242
- Publication date Jan 31, 2019
- Crystal Systems Corporation
- Isamu Shindo
- C30 - CRYSTAL GROWTH
Information Patent Application
DIRECT CONVERSION OF H-BN INTO C-BN AND STRUCTURES FOR A VARIETY OF...
- Publication number 20170037534
- Publication date Feb 9, 2017
- North Carolina State University
- Jagdish Narayan
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHESIS AND PROCESSING OF NOVEL PHASE OF BORON NITRIDE (Q-BN)
- Publication number 20170037533
- Publication date Feb 9, 2017
- North Carolina State University
- Jagdish Narayan
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHESIS AND PROCESSING OF Q-CARBON, GRAPHENE, AND DIAMOND
- Publication number 20170037530
- Publication date Feb 9, 2017
- North Carolina State University
- Jagdish Narayan
- C30 - CRYSTAL GROWTH
Information Patent Application
DIRECT CONVERSION OF CARBON INTO DIAMOND AND STRUCTURES FOR A VARIE...
- Publication number 20170037531
- Publication date Feb 9, 2017
- North Carolina State University
- Jagdish Narayan
- C30 - CRYSTAL GROWTH
Information Patent Application
CONVERSION OF CARBON INTO N-TYPE AND P-TYPE DOPED DIAMOND AND STRUC...
- Publication number 20170037532
- Publication date Feb 9, 2017
- North Carolina State University
- Jagdish Narayan
- C30 - CRYSTAL GROWTH
Information Patent Application
Ga2O3 SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR
- Publication number 20160017512
- Publication date Jan 21, 2016
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING SOLAR GRADE SILICON SINGLE CRYSTAL USING CZOCH...
- Publication number 20160002819
- Publication date Jan 7, 2016
- TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY CO., LTD
- Yanjun WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF FORMING AND ANALYZING DOPED SILICON
- Publication number 20150284873
- Publication date Oct 8, 2015
- HEMLOCK SEMICONDUCTOR CORPORATION
- Douglas Homer Kreszowski
- C30 - CRYSTAL GROWTH
Information Patent Application
GERMANIUM ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS
- Publication number 20150020729
- Publication date Jan 22, 2015
- Silicor Materials Inc.
- Fritz G. Kirscht
- C30 - CRYSTAL GROWTH
Information Patent Application
STABILIZED THALLIUM BROMIDE RADIATION DETECTORS AND METHODS OF MAKI...
- Publication number 20140097349
- Publication date Apr 10, 2014
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Cedric Rocha Leao
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR THE GROWTH OF A CRYSTALLINE SOLID, ASSOCIATED CRYSTALLI...
- Publication number 20140083351
- Publication date Mar 27, 2014
- ECOLE POLYTECHNIQUE
- Jean-Christophe Chanteloup
- C30 - CRYSTAL GROWTH
Information Patent Application
Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE...
- Publication number 20140072010
- Publication date Mar 13, 2014
- National Taiwan University
- KUANG-YU HSU
- C30 - CRYSTAL GROWTH
Information Patent Application
Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE...
- Publication number 20140060420
- Publication date Mar 6, 2014
- National Taiwan University
- KUANG-YU HSU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL
- Publication number 20140060421
- Publication date Mar 6, 2014
- Siltronic AG
- Josef Lobmeyer
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR TAILORING THE DOPANT PROFILE IN A LASER CRYSTAL USING ZO...
- Publication number 20130044779
- Publication date Feb 21, 2013
- Raytheon Company
- Robert W. BYREN
- C30 - CRYSTAL GROWTH
Information Patent Application
Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE...
- Publication number 20120051082
- Publication date Mar 1, 2012
- Kuang-Yu HSU
- C30 - CRYSTAL GROWTH
Information Patent Application
GERMANIUM ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS
- Publication number 20110126758
- Publication date Jun 2, 2011
- CALISOLAR, INC.
- Fritz G. Kirscht
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SEMICONDUCTOR SOLIDIFICATION WITH THE ADDITION OF DOPED...
- Publication number 20100171232
- Publication date Jul 8, 2010
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Florence Servant
- C30 - CRYSTAL GROWTH
Information Patent Application
Process and Apparatus for Producing a Single Crystal of Semiconduct...
- Publication number 20100158783
- Publication date Jun 24, 2010
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
GERMANIUM-ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS
- Publication number 20090308455
- Publication date Dec 17, 2009
- CALISOLAR, INC.
- Fritz Kirscht
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCT...
- Publication number 20090084669
- Publication date Apr 2, 2009
- Siltronic AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
DEEP-EUTECTIC MELT GROWTH OF NITRIDE CRYSTALS
- Publication number 20090050050
- Publication date Feb 26, 2009
- Crystal IS, Inc.
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Producing Directionally Solidified Silicon Ingots
- Publication number 20080029019
- Publication date Feb 7, 2008
- ELKEM SOLAR AS
- Christian Dethloff
- C30 - CRYSTAL GROWTH
Information Patent Application
Doped semiconductor wafer of float zone pulled semiconductor materi...
- Publication number 20030192470
- Publication date Oct 16, 2003
- Wacker Siltronic AG
- Rolf Knobel
- C30 - CRYSTAL GROWTH
Information Patent Application
Process and apparatus for producing a single crystal of semiconduct...
- Publication number 20030145781
- Publication date Aug 7, 2003
- Wacker Siltronic AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating a semiconductor epitaxial wafer having doped...
- Publication number 20030079677
- Publication date May 1, 2003
- Seung Ho Pyi
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods of producing doped semiconductors
- Publication number 20010001943
- Publication date May 31, 2001
- SEH America, Inc.
- Douglas G. Anderson
- C30 - CRYSTAL GROWTH

with addition of doping material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

GA2O3-based single crystal substrate, and production method therefor

Synthesis and processing of novel phase of carbon (Q-carbon)

Synthesis and processing of Q-carbon, graphene, and diamond

Synthesis and processing of novel phase of boron nitride (Q-BN)

Method for tailoring the dopant profile in a laser crystal using zo...

Conversion of carbon into n-type and p-type doped diamond and struc...

Method for manufacturing highly pure silicon, highly pure silicon o...

Ga2O3-based single crystal substrate, and production method therefor

Method for tailoring the dopant profile in a laser crystal using zo...

Method of manufacturing a Ti:sapphire crystal fiber by laser-heated...

Method for producing a silicon single crystal

Stabilized thallium bromide radiation detectors and methods of maki...

Ti: sapphire crystal fiber, manufacturing method thereof, and wide...

Germanium enriched silicon material for making solar cells

Ti: sapphire crystal fiber, manufacturing method thereof, and wide...

Process and apparatus for producing a single crystal of semiconduct...

Deep-eutectic melt growth of nitride crystals

Germanium-enriched silicon material for making solar cells

Process and apparatus for producing a single crystal of semiconduct...

Doped semiconductor wafer of float zone pulled semiconductor materi...

Method for fabricating a semiconductor epitaxial wafer having doped...

Methods of producing doped semiconductors

Methods of producing doped semiconductors

Process and apparatus for producing silicon ingots having high oxyg...

Apparatus for doping semiconductor rods with solid dopants

Method for controlled doping of silicon crystals by improved float...

Semiconductor devices by laser enhanced diffusion

Method for controlled doping semiconductor material with highly vol...

Photo-induced temperature gradient zone melting

Method for producing an InSb thin film element

Patents Applicationslast 30 patents

Method of Producing a Single-Crystal

GA2O3-BASED SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR

Single-Crystal Production Equipment

DIRECT CONVERSION OF H-BN INTO C-BN AND STRUCTURES FOR A VARIETY OF...

SYNTHESIS AND PROCESSING OF NOVEL PHASE OF BORON NITRIDE (Q-BN)

SYNTHESIS AND PROCESSING OF Q-CARBON, GRAPHENE, AND DIAMOND

DIRECT CONVERSION OF CARBON INTO DIAMOND AND STRUCTURES FOR A VARIE...

CONVERSION OF CARBON INTO N-TYPE AND P-TYPE DOPED DIAMOND AND STRUC...

Ga2O3 SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR

METHOD FOR PREPARING SOLAR GRADE SILICON SINGLE CRYSTAL USING CZOCH...

METHODS OF FORMING AND ANALYZING DOPED SILICON

GERMANIUM ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS

STABILIZED THALLIUM BROMIDE RADIATION DETECTORS AND METHODS OF MAKI...

PROCESS FOR THE GROWTH OF A CRYSTALLINE SOLID, ASSOCIATED CRYSTALLI...

Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE...

Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE...

METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL

METHOD FOR TAILORING THE DOPANT PROFILE IN A LASER CRYSTAL USING ZO...

Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE...

GERMANIUM ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS

METHOD FOR SEMICONDUCTOR SOLIDIFICATION WITH THE ADDITION OF DOPED...

Process and Apparatus for Producing a Single Crystal of Semiconduct...

GERMANIUM-ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS

PROCESS AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCT...

DEEP-EUTECTIC MELT GROWTH OF NITRIDE CRYSTALS

Method For Producing Directionally Solidified Silicon Ingots

Doped semiconductor wafer of float zone pulled semiconductor materi...

Process and apparatus for producing a single crystal of semiconduct...

Method for fabricating a semiconductor epitaxial wafer having doped...

Methods of producing doped semiconductors