with AIIIBV compounds

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CPC
H01L21/246

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/246with AIIIBV compounds

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Electrode with alloy interface
- Patent number 11,557,482
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral current injection electro-optical device with well-separate...
- Patent number 10,897,121
- Issue date Jan 19, 2021
- International Business Machines Corporation
- Charles Caër
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical cavity surface emitting laser, method for fabricating vert...
- Patent number 10,847,950
- Issue date Nov 24, 2020
- Sumitomo Electric Industries, Ltd.
- Yutaka Onishi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Compound semiconductor device with quantum well structure, power su...
- Patent number 10,651,305
- Issue date May 12, 2020
- Fujitsu Limited
- Junji Kotani
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Ni:NiGe:Ge selective etch formulations and method of using same
- Patent number 10,340,150
- Issue date Jul 2, 2019
- Entegris, Inc.
- Steven Bilodeau
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Nitride semiconductor device and process of forming the same
- Patent number 10,263,094
- Issue date Apr 16, 2019
- Sumitomo Electric Industries, Ltd.
- Ken Nakata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,818,838
- Issue date Nov 14, 2017
- Sumitomo Electric Device Innovations, Inc.
- Tsutomu Komatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped zinc oxide and n-doping to reduce junction leakage
- Patent number 9,620,592
- Issue date Apr 11, 2017
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned III-V MOSFET diffusion regions and silicide-like alloy...
- Patent number 8,822,317
- Issue date Sep 2, 2014
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical contact for compound semiconductor device and method for...
- Patent number 6,858,522
- Issue date Feb 22, 2005
- Skyworks Solutions, Inc.
- Richard S. Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing III-nitride semiconductor devices
- Patent number 6,486,050
- Issue date Nov 26, 2002
- Opto Tech Corporation
- Ching-ting Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable frequency jitter generator
- Patent number 4,916,411
- Issue date Apr 10, 1990
- Hewlett-Packard Company
- Anthony Lymer
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of manufacturing metal-semiconductor contacts exhibiting hig...
- Patent number 4,307,131
- Issue date Dec 22, 1981
- Thomson-CSF
- Paul C. Moutou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a siliceous cover layer on a semiconductor elem...
- Patent number 4,075,044
- Issue date Feb 21, 1978
- S.A. Metallurgie Hoboken-Overpelt N.V.
- Hans Jager
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE
- Publication number 20220406898
- Publication date Dec 22, 2022
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- SHENGHOU LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode with Alloy Interface
- Publication number 20210104406
- Publication date Apr 8, 2021
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING OHMIC CONTACT FOR GALLIUM NITRIDE-BASED COMPOUND...
- Publication number 20200365705
- Publication date Nov 19, 2020
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- SHENGHOU LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190198655
- Publication date Jun 27, 2019
- KABUSHIKI KAISHA TOSHIBA
- Keiichi MATSUSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND PROCESS OF FORMING THE SAME
- Publication number 20180204928
- Publication date Jul 19, 2018
- Sumitomo Electric Industries, Ltd.
- Ken NAKATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NI:NIGE:GE SELECTIVE ETCH FORMULATIONS AND METHOD OF USING SAME
- Publication number 20160314990
- Publication date Oct 27, 2016
- Entegris, Inc.
- Steven BILODEAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20160293724
- Publication date Oct 6, 2016
- Tsutomu Komatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED III-V MOSFET DIFFUSION REGIONS AND SILICIDE-LIKE ALLOY...
- Publication number 20130001659
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED III-V MOSFET DIFFUSION REGIONS AND SILICIDE-LIKE ALLOY...
- Publication number 20130001657
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS

with AIIIBV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electrode with alloy interface

Lateral current injection electro-optical device with well-separate...

Vertical cavity surface emitting laser, method for fabricating vert...

Compound semiconductor device with quantum well structure, power su...

Ni:NiGe:Ge selective etch formulations and method of using same

Nitride semiconductor device and process of forming the same

Semiconductor device

Doped zinc oxide and n-doping to reduce junction leakage

Self-aligned III-V MOSFET diffusion regions and silicide-like alloy...

Electrical contact for compound semiconductor device and method for...

Method of manufacturing III-nitride semiconductor devices

Variable frequency jitter generator

Method of manufacturing metal-semiconductor contacts exhibiting hig...

Method of producing a siliceous cover layer on a semiconductor elem...

Patents Applicationslast 30 patents

GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE

Electrode with Alloy Interface

METHOD OF FORMING OHMIC CONTACT FOR GALLIUM NITRIDE-BASED COMPOUND...

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND PROCESS OF FORMING THE SAME

NI:NIGE:GE SELECTIVE ETCH FORMULATIONS AND METHOD OF USING SAME

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SELF-ALIGNED III-V MOSFET DIFFUSION REGIONS AND SILICIDE-LIKE ALLOY...

SELF-ALIGNED III-V MOSFET DIFFUSION REGIONS AND SILICIDE-LIKE ALLOY...