with bit line higher than capacitor

Industry

CPC
H01L27/10811

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/10811with bit line higher than capacitor

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,670,673
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Hyun-suk Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing thereof
- Patent number 11,563,006
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with vertical gate transistor
- Patent number 11,563,007
- Issue date Jan 24, 2023
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,469,327
- Issue date Oct 11, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,444,203
- Issue date Sep 13, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,417,768
- Issue date Aug 16, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,411,116
- Issue date Aug 9, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,398,570
- Issue date Jul 26, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,355,643
- Issue date Jun 7, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,349,031
- Issue date May 31, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method for fabricating the same
- Patent number 11,329,046
- Issue date May 10, 2022
- SK Hynix Inc.
- Kangsik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,296,228
- Issue date Apr 5, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,289,607
- Issue date Mar 29, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,289,608
- Issue date Mar 29, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional nanoribbon-based dynamic random-access memory
- Patent number 11,257,822
- Issue date Feb 22, 2022
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of capacitors, array of memory cells, methods of forming an a...
- Patent number 11,244,952
- Issue date Feb 8, 2022
- Micron Technology, Inc.
- Sameer Chhajed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming an apparatus including device structures includi...
- Patent number 11,201,154
- Issue date Dec 14, 2021
- Micron Technology, Inc.
- Song Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming an array of capacitors, methods of forming an ar...
- Patent number 11,201,207
- Issue date Dec 14, 2021
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with graphene layer and method for forming the...
- Patent number 11,189,622
- Issue date Nov 30, 2021
- NANYA TECHNOLOGY CORPORATION
- Cheng-Ling Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,164,976
- Issue date Nov 2, 2021
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure with embedded memory device and contact isolation scheme
- Patent number 11,152,355
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fan-Shuen Meng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor having improved capacitance and fabrication method...
- Patent number 11,139,368
- Issue date Oct 5, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and display device including the semiconductor...
- Patent number 11,107,930
- Issue date Aug 31, 2021
- Semiconductor Energy Laboratory Co., Ltd.
- Yasutaka Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 11,063,047
- Issue date Jul 13, 2021
- Semiconductor Energy Laboratory Co., Ltd.
- Yasuhiko Takemura
- G11 - INFORMATION STORAGE
Information Patent Grant
Column formation using sacrificial material
- Patent number 11,011,523
- Issue date May 18, 2021
- Micron Technology, Inc.
- Devesh Dadhich Shreeram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure
- Patent number 10,998,319
- Issue date May 4, 2021
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu Tsai
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays with vertical access transistors
- Patent number 10,916,548
- Issue date Feb 9, 2021
- Micron Technology, Inc.
- Scott J. Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 10,903,308
- Issue date Jan 26, 2021
- Samsung Electronics Co., Ltd.
- Hyun-suk Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacturing the same
- Patent number 10,886,406
- Issue date Jan 5, 2021
- NANYA TECHNOLOGY CORPORATION
- Chang-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing capacitor structure
- Patent number 10,872,895
- Issue date Dec 22, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240081043
- Publication date Mar 7, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Yukihiro Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED DIELECTRIC MATERIAL
- Publication number 20240064962
- Publication date Feb 22, 2024
- Micron Technology, Inc.
- David K. Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240032273
- Publication date Jan 25, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- XUANXUAN CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230413518
- Publication date Dec 21, 2023
- SK HYNIX INC.
- Seung Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230413517
- Publication date Dec 21, 2023
- SK HYNIX INC.
- Seung Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20230403840
- Publication date Dec 14, 2023
- Changxin Memory Technologies, Inc.
- Yi JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230397403
- Publication date Dec 7, 2023
- SK HYNIX INC.
- Jin Sun CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230389281
- Publication date Nov 30, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- YOUMING LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING MEMORY DEVICE HAVING PROTRUSION OF WORD LINE
- Publication number 20230389282
- Publication date Nov 30, 2023
- NANYA TECHNOLOGY CORPORATION
- JAR-MING HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20230389283
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- MENG-HAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230371234
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cha-Yu LING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20230345703
- Publication date Oct 26, 2023
- WINBOND ELECTRONICS CORP.
- Ying-Chu YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF
- Publication number 20230301064
- Publication date Sep 21, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Guangsu SHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PRODUCING THE SAME
- Publication number 20230301065
- Publication date Sep 21, 2023
- KIOXIA Corporation
- Mutsumi OKAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR STR...
- Publication number 20230292486
- Publication date Sep 14, 2023
- ChangXin Memory Technologies, Inc.
- Guangsu SHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20230292487
- Publication date Sep 14, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Songyu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE HAVING A CHANNEL LAYER WITH DIFFEREN...
- Publication number 20230284435
- Publication date Sep 7, 2023
- NANYA TECHNOLOGY CORPORATION
- SZU-YAO CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20230240063
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Chun LIOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE MEMORY DEVICE
- Publication number 20230200047
- Publication date Jun 22, 2023
- SK HYNIX INC.
- Jae Taek KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230171947
- Publication date Jun 1, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Kang YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230163216
- Publication date May 25, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND EL...
- Publication number 20230146542
- Publication date May 11, 2023
- Samsung Electronics Co., Ltd.
- Min Jae OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230143211
- Publication date May 11, 2023
- MemoRist Co., Ltd.
- CHAO-YANG CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRU...
- Publication number 20230147028
- Publication date May 11, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Kui ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230142605
- Publication date May 11, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20230133977
- Publication date May 4, 2023
- Samsung Electronics Co., Ltd.
- Se-Ho YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230128526
- Publication date Apr 27, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230123515
- Publication date Apr 20, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOBILE CASINO JACKPOT PAYMENT REPORTING SYSTEM WITH SECURE FORM REP...
- Publication number 20230112977
- Publication date Apr 13, 2023
- Everi Payments Inc.
- Adam Fong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230083158
- Publication date Mar 16, 2023
- KIOXIA Corporation
- Kenichi MATOBA
- H01 - BASIC ELECTRIC ELEMENTS

with bit line higher than capacitor

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Semiconductor structure and method for manufacturing thereof

Semiconductor structure with vertical gate transistor

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Memory device and method for fabricating the same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Three-dimensional nanoribbon-based dynamic random-access memory

Array of capacitors, array of memory cells, methods of forming an a...

Methods of forming an apparatus including device structures includi...

Methods of forming an array of capacitors, methods of forming an ar...

Semiconductor device with graphene layer and method for forming the...

Doped polar layers and semiconductor device incorporating same

Structure with embedded memory device and contact isolation scheme

Trench capacitor having improved capacitance and fabrication method...

Semiconductor device and display device including the semiconductor...

Semiconductor device and method for manufacturing semiconductor device

Column formation using sacrificial material

Memory structure

Memory arrays with vertical access transistors

Semiconductor device

Semiconductor structure and method of manufacturing the same

Method of manufacturing capacitor structure

Patents Applicationslast 30 patents

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

DOPED DIELECTRIC MATERIAL

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

METHOD FOR PREPARING MEMORY DEVICE HAVING PROTRUSION OF WORD LINE

MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME

MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PRODUCING THE SAME

SEMICONDUCTOR STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR STR...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

SEMICONDUCTOR DEVICE STRUCTURE HAVING A CHANNEL LAYER WITH DIFFEREN...

MEMORY DEVICE

MEMORY DEVICE AND METHOD OF MANUFACTURING THE MEMORY DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND EL...

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRU...

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

MOBILE CASINO JACKPOT PAYMENT REPORTING SYSTEM WITH SECURE FORM REP...

SEMICONDUCTOR DEVICE