with ferroelectric memory capacitor

Industry

CPC
H01L27/11502

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/11502with ferroelectric memory capacitor

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Ferroelectric device film stacks with texturing layer, and method o...
- Patent number 11,659,714
- Issue date May 23, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asynchronous circuit with majority gate or minority gate logic
- Patent number 11,658,664
- Issue date May 23, 2023
- Kepler Computing Inc.
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies and methods of forming integrated assemblies
- Patent number 11,626,488
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Srinivas Pulugurtha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level ferroelectric memory cell
- Patent number 11,621,269
- Issue date Apr 4, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Improper ferroelectric active and passive devices
- Patent number 11,581,417
- Issue date Feb 14, 2023
- Intel Corporation
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Grant
Majority logic gate with input paraelectric capacitors
- Patent number 11,539,368
- Issue date Dec 27, 2022
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Grant
Thin film structure including dielectric material layer and electro...
- Patent number 11,532,722
- Issue date Dec 20, 2022
- Samsung Electronics Co., Ltd.
- Woojin Lee
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
System-on-chip with ferroelectric random access memory and tunable...
- Patent number 11,527,542
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies and methods of forming integrated assemblies
- Patent number 11,527,623
- Issue date Dec 13, 2022
- Micron Technology, Inc.
- Aaron Michael Lowe
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric capacitor integrated with logic
- Patent number 11,522,044
- Issue date Dec 6, 2022
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Grant
Gated ferroelectric memory cells for memory cell array and methods...
- Patent number 11,515,313
- Issue date Nov 29, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric assemblies and methods of forming ferroelectric assem...
- Patent number 11,515,396
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Albert Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric components and cross point array devices including th...
- Patent number 11,502,248
- Issue date Nov 15, 2022
- SK hynix Inc.
- Jae Gil Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pillar capacitor and method of fabricating such
- Patent number 11,482,528
- Issue date Oct 25, 2022
- Kepler Computing Inc.
- Gaurav Thareja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,469,310
- Issue date Oct 11, 2022
- SK Hynix Inc.
- Wan Joo Maeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor and method of patterning such
- Patent number 11,430,861
- Issue date Aug 30, 2022
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectricity and thermal retention through in situ hydrogen pla...
- Patent number 11,424,271
- Issue date Aug 23, 2022
- University of Florida Research Foundation, Inc.
- Toshikazu Nishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having memory device and method of forming...
- Patent number 11,411,011
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell arrangement
- Patent number 11,393,832
- Issue date Jul 19, 2022
- FERROELECTRIC MEMORY GMBH
- Menno Mennenga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 11,342,343
- Issue date May 24, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies and methods of forming integrated assemblies
- Patent number 11,335,775
- Issue date May 17, 2022
- Micron Technology, Inc.
- Srinivas Pulugurtha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric-capacitor integration using novel multi-metal-level i...
- Patent number 11,322,504
- Issue date May 3, 2022
- Intel Corporation
- Uygar Avci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,296,116
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory devices with reduced edge leakage and methods...
- Patent number 11,289,511
- Issue date Mar 29, 2022
- WUXI PETABYTE TECHNOLOGIES CO, LTD.
- Yushi Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect and memory structures formed in the BEOL
- Patent number 11,282,788
- Issue date Mar 22, 2022
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells
- Patent number 11,244,951
- Issue date Feb 8, 2022
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple plate line architecture for multideck memory array
- Patent number 11,227,648
- Issue date Jan 18, 2022
- Micron Technology, Inc.
- Ferdinando Bedeschi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memories
- Patent number 11,217,661
- Issue date Jan 4, 2022
- Industrial Technology Research Institute
- Yu-De Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formulation for deposition of silicon doped hafnium oxide as ferroe...
- Patent number 11,193,206
- Issue date Dec 7, 2021
- VERSUM MATERIALS US, LLC
- Xinjian Lei
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Arrays of capacitors, methods used in forming integrated circuitry,...
- Patent number 11,195,838
- Issue date Dec 7, 2021
- Micron Technology, Inc.
- Scott L. Light
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...
- Publication number 20240172454
- Publication date May 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS
- Publication number 20240114692
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-DENSITY LOW VOLTAGE FERROELECTRIC DIFFERENTIAL MEMORY BIT-CELL...
- Publication number 20230420022
- Publication date Dec 28, 2023
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF OPERATING FERROELECTRIC (Fe) FET BASED NON-VOLATILE MEMO...
- Publication number 20230189530
- Publication date Jun 15, 2023
- Georgia Tech Research Corporation
- ASIF KHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANGANESE OR SCANDIUM DOPED FERROELECTRIC PLANAR DEVICE AND DIFFERE...
- Publication number 20230116124
- Publication date Apr 13, 2023
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230094859
- Publication date Mar 30, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Xiaoguang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED FERROELECTRIC MEMORY CELLS FOR MEMORY CELL ARRAY AND METHODS...
- Publication number 20230090306
- Publication date Mar 23, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng YOUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITOR INTEGRATED WITH LOGIC
- Publication number 20230077581
- Publication date Mar 16, 2023
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Application
THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER AND ELECTRO...
- Publication number 20230074895
- Publication date Mar 9, 2023
- Samsung Electronics Co., Ltd.
- Woojin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20230065132
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Assemblies and Methods of Forming Ferroelectric Assem...
- Publication number 20230045210
- Publication date Feb 9, 2023
- Micron Technology, Inc.
- Albert Liao
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC COMPONENTS AND CROSS POINT ARRAY DEVICES INCLUDING TH...
- Publication number 20230030038
- Publication date Feb 2, 2023
- SK HYNIX INC.
- Jae Gil LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-FERROELECTRIC THIN-FILM STRUCTURE AND ELECTRONIC DEVICE INCLUD...
- Publication number 20230022629
- Publication date Jan 26, 2023
- Samsung Electronics Co., Ltd.
- Boeun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAJORITY LOGIC GATE WITH INPUT PARAELECTRIC CAPACITORS
- Publication number 20230023797
- Publication date Jan 26, 2023
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STORAGE DEVICE, NON-VOLATILE STORAGE ELEMENT, AND MANU...
- Publication number 20230012093
- Publication date Jan 12, 2023
- TOKYO INSTITUTE OF TECHNOLOGY
- Kuniyuki KAKUSHIMA
- G11 - INFORMATION STORAGE
Information Patent Application
LAYER STRUCTURE INCLUDING DIELECTRIC LAYER, METHODS OF MANUFACTURIN...
- Publication number 20230009791
- Publication date Jan 12, 2023
- Samsung Electronics Co., Ltd.
- Yunseong LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220416055
- Publication date Dec 29, 2022
- SK HYNIX INC.
- Wan Joo MAENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING MEMORY DEVICE AND METHOD OF FORMING...
- Publication number 20220359548
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Assemblies and Methods of Forming Integrated Assemblies
- Publication number 20220352324
- Publication date Nov 3, 2022
- Micron Technology, Inc.
- Aaron Michael Lowe
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220278117
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIH-YU CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220231033
- Publication date Jul 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fu-Chen CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells
- Publication number 20220122998
- Publication date Apr 21, 2022
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION METHOD FOR MEMORY CELL
- Publication number 20220077165
- Publication date Mar 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Assemblies and Methods of Forming Integrated Assemblies
- Publication number 20220069082
- Publication date Mar 3, 2022
- Micron Technology, Inc.
- Srinivas Pulugurtha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies and Methods of Forming Integrated Assemblies
- Publication number 20220069083
- Publication date Mar 3, 2022
- Micron Technology, Inc.
- Srinivas Pulugurtha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-METAL LATERAL LAYER DEVICES WITH INTERNAL BIAS GENERATION
- Publication number 20220069131
- Publication date Mar 3, 2022
- Applied Materials, Inc.
- Milan Pesic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Arrays Of Capacitors, Methods Used In Forming Integrated Circuitry,...
- Publication number 20220059536
- Publication date Feb 24, 2022
- Micron Technology, Inc.
- Scott L. Light
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies and Methods of Forming Integrated Assemblies
- Publication number 20220037483
- Publication date Feb 3, 2022
- Micron Technology, Inc.
- Aaron Michael Lowe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC MATERIAL, METHOD OF PREPARING THE SAME, AND DEVICE COMPR...
- Publication number 20220028613
- Publication date Jan 27, 2022
- Samsung Electronics Co., Ltd.
- Taewon JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells And Methods Of Forming A Capacitor Including Current L...
- Publication number 20220028442
- Publication date Jan 27, 2022
- Micron Technology, Inc.
- Michael Mutch
- H01 - BASIC ELECTRIC ELEMENTS

with ferroelectric memory capacitor

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Ferroelectric device film stacks with texturing layer, and method o...

Asynchronous circuit with majority gate or minority gate logic

Integrated assemblies and methods of forming integrated assemblies

Multi-level ferroelectric memory cell

Improper ferroelectric active and passive devices

Majority logic gate with input paraelectric capacitors

Thin film structure including dielectric material layer and electro...

System-on-chip with ferroelectric random access memory and tunable...

Integrated assemblies and methods of forming integrated assemblies

Ferroelectric capacitor integrated with logic

Gated ferroelectric memory cells for memory cell array and methods...

Ferroelectric assemblies and methods of forming ferroelectric assem...

Ferroelectric components and cross point array devices including th...

Pillar capacitor and method of fabricating such

Semiconductor device

Ferroelectric capacitor and method of patterning such

Ferroelectricity and thermal retention through in situ hydrogen pla...

Semiconductor structure having memory device and method of forming...

Memory cell arrangement

Semiconductor structure and method for manufacturing the same

Integrated assemblies and methods of forming integrated assemblies

Ferroelectric-capacitor integration using novel multi-metal-level i...

Semiconductor device and method of forming the same

Ferroelectric memory devices with reduced edge leakage and methods...

Interconnect and memory structures formed in the BEOL

Memory cells

Multiple plate line architecture for multideck memory array

Ferroelectric memories

Formulation for deposition of silicon doped hafnium oxide as ferroe...

Arrays of capacitors, methods used in forming integrated circuitry,...

Patents Applicationslast 30 patents

CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...

INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS

HIGH-DENSITY LOW VOLTAGE FERROELECTRIC DIFFERENTIAL MEMORY BIT-CELL...

METHODS OF OPERATING FERROELECTRIC (Fe) FET BASED NON-VOLATILE MEMO...

MANGANESE OR SCANDIUM DOPED FERROELECTRIC PLANAR DEVICE AND DIFFERE...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

GATED FERROELECTRIC MEMORY CELLS FOR MEMORY CELL ARRAY AND METHODS...

FERROELECTRIC CAPACITOR INTEGRATED WITH LOGIC

THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER AND ELECTRO...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Ferroelectric Assemblies and Methods of Forming Ferroelectric Assem...

FERROELECTRIC COMPONENTS AND CROSS POINT ARRAY DEVICES INCLUDING TH...

ANTI-FERROELECTRIC THIN-FILM STRUCTURE AND ELECTRONIC DEVICE INCLUD...

MAJORITY LOGIC GATE WITH INPUT PARAELECTRIC CAPACITORS

NON-VOLATILE STORAGE DEVICE, NON-VOLATILE STORAGE ELEMENT, AND MANU...

LAYER STRUCTURE INCLUDING DIELECTRIC LAYER, METHODS OF MANUFACTURIN...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE HAVING MEMORY DEVICE AND METHOD OF FORMING...

Integrated Assemblies and Methods of Forming Integrated Assemblies

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Memory Cells

INTEGRATION METHOD FOR MEMORY CELL

Integrated Assemblies and Methods of Forming Integrated Assemblies

Integrated Assemblies and Methods of Forming Integrated Assemblies

MULTI-METAL LATERAL LAYER DEVICES WITH INTERNAL BIAS GENERATION

Arrays Of Capacitors, Methods Used In Forming Integrated Circuitry,...

Integrated Assemblies and Methods of Forming Integrated Assemblies

DIELECTRIC MATERIAL, METHOD OF PREPARING THE SAME, AND DEVICE COMPR...

Memory Cells And Methods Of Forming A Capacitor Including Current L...