with sacrificial oxide

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CPC
H01L21/28238

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/28238with sacrificial oxide

Industries

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Patents Grantslast 30 patents

Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,938
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with treated interfacial layer on silicon germ...
- Patent number 12,148,843
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching method and plasma etching apparatus
- Patent number 12,062,522
- Issue date Aug 13, 2024
- Tokyo Electron Limited
- Keiji Kitagaito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 11,996,297
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chin-Ta Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,935,939
- Issue date Mar 19, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor device and method for fabricating the same
- Patent number 11,869,953
- Issue date Jan 9, 2024
- United Microelectronics Corp.
- Sheng-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 11,864,370
- Issue date Jan 2, 2024
- SK Hynix Inc.
- Kang Yoo Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 11,764,301
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 11,728,219
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method for manufacturing the same
- Patent number 11,694,901
- Issue date Jul 4, 2023
- SHANGHAI INDUSTRIAL μTECHNOLOGY RESEARCH INSTITUTE
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with treated interfacial layer on silicon germ...
- Patent number 11,688,812
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming memory device
- Patent number 11,637,017
- Issue date Apr 25, 2023
- Powerchip Semiconductor Manufacturing Corporation
- Wen Chung Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating high-voltage (HV) transistor
- Patent number 11,488,837
- Issue date Nov 1, 2022
- United Microelectronics Corp.
- Chia-Jung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor device and method for fabricating the same
- Patent number 11,476,343
- Issue date Oct 18, 2022
- United Microelectronics Corp.
- Sheng-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate interface engineering with doped layer
- Patent number 11,456,178
- Issue date Sep 27, 2022
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including multi-tier moat isolation...
- Patent number 11,404,427
- Issue date Aug 2, 2022
- SanDisk Technologies LLC
- Yoshitaka Otsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching method and plasma etching apparatus
- Patent number 11,355,352
- Issue date Jun 7, 2022
- Tokyo Electron Limited
- Keiji Kitagaito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming metal gates
- Patent number 11,295,990
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 11,257,944
- Issue date Feb 22, 2022
- Rohm Co., Ltd.
- Shigenari Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method for manufacturing the same
- Patent number 11,217,694
- Issue date Jan 4, 2022
- SHANGHAI INDUSTRIAL μTECHNOLOGY RESEARCH INSTITUTE
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 11,189,495
- Issue date Nov 30, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yafeng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,183,579
- Issue date Nov 23, 2021
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing horizontal and vertical...
- Patent number 11,133,252
- Issue date Sep 28, 2021
- SanDisk Technologies LLC
- Koichi Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating a semiconductor device having a desaturation ch...
- Patent number 11,121,242
- Issue date Sep 14, 2021
- Infineon Technologies AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal vertical transfer gate with high-k dielectric passivation lining
- Patent number 11,121,169
- Issue date Sep 14, 2021
- OmniVision Technologies, Inc.
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 11,107,689
- Issue date Aug 31, 2021
- United Microelectronics Corp.
- Shi-You Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 11,094,826
- Issue date Aug 17, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with treated interfacial layer on silicon germ...
- Patent number 11,031,508
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 11,031,293
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 11,011,428
- Issue date May 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET DEVICE AND METHOD OF FORMING SAME
- Publication number 20240379853
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE DEVICE AND METHOD OF FABRICATING A GRAPHENE DEVICE
- Publication number 20240213351
- Publication date Jun 27, 2024
- Graphenea Semiconductor S.L.U.
- Elías Torres Alonso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF FORMING SAME
- Publication number 20230378362
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TREATED INTERFACIAL LAYER ON SILICON GERM...
- Publication number 20230282753
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yu CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DEPOSITION ON METALS USING POROUS LOW-K MATERIALS
- Publication number 20230154757
- Publication date May 18, 2023
- International Business Machines Corporation
- Krystelle Lionti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED PROCESS FOR QUBIT FABRICATION
- Publication number 20230059594
- Publication date Feb 23, 2023
- International Business Machines Corporation
- Gerald W. Gibson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20230049896
- Publication date Feb 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Dah CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230006048
- Publication date Jan 5, 2023
- United Microelectronics Corp.
- Sheng-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS
- Publication number 20220262646
- Publication date Aug 18, 2022
- TOKYO ELECTRON LIMITED
- Keiji KITAGAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220238673
- Publication date Jul 28, 2022
- United Microelectronics Corp.
- Sheng-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING HIGH-VOLTAGE (HV) TRANSISTOR
- Publication number 20220093411
- Publication date Mar 24, 2022
- United Microelectronics Corp.
- Chia-Jung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...
- Publication number 20220059670
- Publication date Feb 24, 2022
- SK hynix Inc.
- Dong-Soo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE INTERFACE ENGINEERING WITH DOPED LAYER
- Publication number 20210398814
- Publication date Dec 23, 2021
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF FORMING SAME
- Publication number 20210376150
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210343544
- Publication date Nov 4, 2021
- SHANGHAI INDUSTRIAL µTECHNOLOGY RESEARCH INSTITUTE
- Qiuxia XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TREATED INTERFACIAL LAYER ON SILICON GERM...
- Publication number 20210296507
- Publication date Sep 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yu CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20210210351
- Publication date Jul 8, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yafeng QIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL VERTICAL TRANSFER GATE WITH HIGH-K DIELECTRIC PASSIVATION LINING
- Publication number 20200411585
- Publication date Dec 31, 2020
- OMNIVISION TECHNOLOGIES, INC.
- Chiao-Ti HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...
- Publication number 20200395461
- Publication date Dec 17, 2020
- SK HYNIX INC.
- Dong-Soo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Operating a Semiconductor Device Having a Desaturation Ch...
- Publication number 20200335613
- Publication date Oct 22, 2020
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20200303208
- Publication date Sep 24, 2020
- Shanghai Industrial µ Technology Research Institute
- Qiuxia Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS
- Publication number 20200294812
- Publication date Sep 17, 2020
- TOKYO ELECTRON LIMITED
- Keiji KITAGAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TREATED INTERFACIAL LAYER ON SILICON GERM...
- Publication number 20200251598
- Publication date Aug 6, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yu CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Metal Gates
- Publication number 20200152521
- Publication date May 14, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20200144064
- Publication date May 7, 2020
- UNITED MICROELECTRONICS CORP.
- Shi-You Liu
- B08 - CLEANING
Information Patent Application
FINFET DEVICE AND METHOD OF FORMING SAME
- Publication number 20200105936
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Metal Gates
- Publication number 20190333826
- Publication date Oct 31, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH K METAL GATE STACK WITH SINGLE WORK-FUNCTION METAL
- Publication number 20190318966
- Publication date Oct 17, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Operating a Semiconductor Device Having a Desaturation Ch...
- Publication number 20190198649
- Publication date Jun 27, 2019
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20190198633
- Publication date Jun 27, 2019
- Vanguard International Semiconductor Corporation
- Shih-Chieh CHIEN
- H01 - BASIC ELECTRIC ELEMENTS

with sacrificial oxide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

FinFET device and method of forming same

Semiconductor device with treated interfacial layer on silicon germ...

Plasma etching method and plasma etching apparatus

Method of manufacturing a semiconductor device

Semiconductor device having buried gate structure and method for fa...

High voltage transistor device and method for fabricating the same

Method for fabricating semiconductor device

FinFET device and method of forming same

Method for fabricating a semiconductor device

Field-effect transistor and method for manufacturing the same

Semiconductor device with treated interfacial layer on silicon germ...

Method of forming memory device

Method for fabricating high-voltage (HV) transistor

High voltage transistor device and method for fabricating the same

Gate interface engineering with doped layer

Three-dimensional memory device including multi-tier moat isolation...

Plasma etching method and plasma etching apparatus

Methods of forming metal gates

Semiconductor device and semiconductor device manufacturing method

Field-effect transistor and method for manufacturing the same

Semiconductor structure and fabrication method thereof

Semiconductor device having buried gate structure and method for fa...

Three-dimensional memory device containing horizontal and vertical...

Method of operating a semiconductor device having a desaturation ch...

Metal vertical transfer gate with high-k dielectric passivation lining

Method for fabricating semiconductor device

FinFET device and method of forming same

Semiconductor device with treated interfacial layer on silicon germ...

Method for fabricating a semiconductor device

Method for fabricating a semiconductor device

Patents Applicationslast 30 patents

FINFET DEVICE AND METHOD OF FORMING SAME

GRAPHENE DEVICE AND METHOD OF FABRICATING A GRAPHENE DEVICE

FINFET DEVICE AND METHOD OF FORMING SAME

SEMICONDUCTOR DEVICE WITH TREATED INTERFACIAL LAYER ON SILICON GERM...

SELECTIVE DEPOSITION ON METALS USING POROUS LOW-K MATERIALS

ENHANCED PROCESS FOR QUBIT FABRICATION

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

HIGH VOLTAGE TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME

PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS

HIGH VOLTAGE TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD FOR FABRICATING HIGH-VOLTAGE (HV) TRANSISTOR

SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...

GATE INTERFACE ENGINEERING WITH DOPED LAYER

FINFET DEVICE AND METHOD OF FORMING SAME

FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH TREATED INTERFACIAL LAYER ON SILICON GERM...

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

METAL VERTICAL TRANSFER GATE WITH HIGH-K DIELECTRIC PASSIVATION LINING

SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...

Method of Operating a Semiconductor Device Having a Desaturation Ch...

FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS

SEMICONDUCTOR DEVICE WITH TREATED INTERFACIAL LAYER ON SILICON GERM...

Methods of Forming Metal Gates

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

FINFET DEVICE AND METHOD OF FORMING SAME

Methods of Forming Metal Gates

HIGH K METAL GATE STACK WITH SINGLE WORK-FUNCTION METAL

Method of Operating a Semiconductor Device Having a Desaturation Ch...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME