with Schottky diodes only

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CPC
H01L27/0766

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/0766with Schottky diodes only

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Power switch module
- Patent number 10,825,618
- Issue date Nov 3, 2020
- Cheng-Tsuen Hsu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 9,748,342
- Issue date Aug 29, 2017
- Kabushiki Kaisha Toshiba
- Tsuyoshi Oota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with a built-in-diode
- Patent number 9,412,737
- Issue date Aug 9, 2016
- Toyota Jidosha Kabushiki Kaisha
- Jun Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap semiconductor apparatus and fabrication method thereof
- Patent number 9,230,958
- Issue date Jan 5, 2016
- Fuji Electric Co., Ltd.
- Akimasa Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diodes with a guard ring formed by selective epitaxy
- Patent number 8,871,600
- Issue date Oct 28, 2014
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure to suppress parasitic current
- Patent number 7,466,004
- Issue date Dec 16, 2008
- Polar Semiconductor, Inc.
- Steven L. Kosier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanometer-scale semiconductor devices and method of making
- Patent number 6,762,094
- Issue date Jul 13, 2004
- Hewlett-Packard Development Company, L.P.
- James Stasiak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,573,582
- Issue date Jun 3, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Yasunori Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating Schottky diode and related structure
- Patent number 6,261,932
- Issue date Jul 17, 2001
- Fairchild Semiconductor Corp.
- Ronald Hulfachor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Retrograde NWell cathode Schottky transistor and fabrication process
- Patent number 5,536,966
- Issue date Jul 16, 1996
- National Semiconductor Corporation
- Murray J. Robinson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process for Schottky barrier diodes on a single poly bi...
- Patent number 5,298,437
- Issue date Mar 29, 1994
- National Semiconductor Corporation
- Brian McFarlane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making polysilicon Schottky clamped transistor and vertic...
- Patent number 5,212,102
- Issue date May 18, 1993
- National Semiconductor Corporation
- Ali A. Iranmanesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a base-coupled transistor logic
- Patent number 5,166,094
- Issue date Nov 24, 1992
- Fairchild Camera & Instrument Corp.
- Ashok K. Kapoor
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Polysilicon Schottky clamped transistor and vertical fuse devices
- Patent number 5,144,404
- Issue date Sep 1, 1992
- National Semiconductor Corporation
- Ali A. Iranmanesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a buried Schottky logic array and apparatus...
- Patent number 5,140,383
- Issue date Aug 18, 1992
- Texas Instruments Incorporated
- Francis J. Morris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried Schottky clamped transistor
- Patent number 4,982,244
- Issue date Jan 1, 1991
- National Semiconductor Corporation
- Ashok K. Kapoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor structure with high speed integral antiparallel Sc...
- Patent number 4,967,243
- Issue date Oct 30, 1990
- General Electric Company
- Bantval J. Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Base-coupled transistor logic
- Patent number 4,947,230
- Issue date Aug 7, 1990
- Fairchild Camera & Instrument Corp.
- Ashok K. Kapoor
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Integrated Schottky diode and transistor
- Patent number 4,871,686
- Issue date Oct 3, 1989
- Motorola, Inc.
- Robert B. Davies
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 4,860,065
- Issue date Aug 22, 1989
- Mitsubishi Denki Kabushiki Kaisha
- Tsunehiro Koyama
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Schottky barrier diode and method
- Patent number 4,835,580
- Issue date May 30, 1989
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Driver element for inductive loads
- Patent number 4,783,693
- Issue date Nov 8, 1988
- SGS Microelettronica S.p.A.
- Angelo Alzati
- G11 - INFORMATION STORAGE
Information Patent Grant
Schottky shunt integrated injection
- Patent number 4,629,912
- Issue date Dec 16, 1986
- Fairchild Camera and Instrument Corp.
- James M. Early
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device
- Patent number 4,525,922
- Issue date Jul 2, 1985
- Fujitsu Limited
- Tadashi Kiriseko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,443,808
- Issue date Apr 17, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Kazuo Kihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit
- Patent number 4,380,021
- Issue date Apr 12, 1983
- Hitachi, Ltd.
- Mitsuo Matsuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of integrating semiconductor components
- Patent number 4,282,538
- Issue date Aug 4, 1981
- RCA Corporation
- Howard R. Beelitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,276,556
- Issue date Jun 30, 1981
- Fujitsu Limited
- Hiromu Enomoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making Schottky barrier diode by ion implantation and imp...
- Patent number 4,260,431
- Issue date Apr 7, 1981
- Harris Corporation
- Leo R. Piotrowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integratable semi-conductor memory cell
- Patent number 4,253,034
- Issue date Feb 24, 1981
- Siemens Aktiengesellschaft
- Peter Rydval
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
POWER SWITCH MODULE
- Publication number 20180301296
- Publication date Oct 18, 2018
- Cheng-Tsuen Hsu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SCHOTTKY BARRIER DIODES WITH A GUARD RING FORMED BY SELECTIVE EPITAXY
- Publication number 20140312453
- Publication date Oct 23, 2014
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Barrier Diodes With a Guard Ring Formed by Selective Epitaxy
- Publication number 20130119505
- Publication date May 16, 2013
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode structure to suppress parasitic current
- Publication number 20070290289
- Publication date Dec 20, 2007
- Polar Semiconductor, Inc.
- Steven L. Kosier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOMETER-SCALE SEMICONDUCTOR DEVICES AND METHOD OF MAKING
- Publication number 20040061151
- Publication date Apr 1, 2004
- James Stasiak
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanometer-scale semiconductor devices and method of making
- Publication number 20040063282
- Publication date Apr 1, 2004
- James Stasiak
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device
- Publication number 20030015765
- Publication date Jan 23, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Yasunori Yamashita
- H01 - BASIC ELECTRIC ELEMENTS

with Schottky diodes only

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Power switch module

Semiconductor device and method for manufacturing the same

IGBT with a built-in-diode

Wide band gap semiconductor apparatus and fabrication method thereof

Schottky barrier diodes with a guard ring formed by selective epitaxy

Diode structure to suppress parasitic current

Nanometer-scale semiconductor devices and method of making

Semiconductor device

Method of fabricating Schottky diode and related structure

Retrograde NWell cathode Schottky transistor and fabrication process

Fabrication process for Schottky barrier diodes on a single poly bi...

Method of making polysilicon Schottky clamped transistor and vertic...

Method of fabricating a base-coupled transistor logic

Polysilicon Schottky clamped transistor and vertical fuse devices

Method for fabricating a buried Schottky logic array and apparatus...

Buried Schottky clamped transistor

Power transistor structure with high speed integral antiparallel Sc...

Base-coupled transistor logic

Integrated Schottky diode and transistor

Semiconductor integrated circuit device

Schottky barrier diode and method

Driver element for inductive loads

Schottky shunt integrated injection

Method of producing a semiconductor device

Semiconductor device

Semiconductor integrated circuit

Method of integrating semiconductor components

Semiconductor device

Method of making Schottky barrier diode by ion implantation and imp...

Integratable semi-conductor memory cell

Patents Applicationslast 30 patents

POWER SWITCH MODULE

SCHOTTKY BARRIER DIODES WITH A GUARD RING FORMED BY SELECTIVE EPITAXY

Schottky Barrier Diodes With a Guard Ring Formed by Selective Epitaxy

Diode structure to suppress parasitic current

NANOMETER-SCALE SEMICONDUCTOR DEVICES AND METHOD OF MAKING

Nanometer-scale semiconductor devices and method of making

Semiconductor device