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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/0744without components of the field effect type

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Patents Grantslast 30 patents

Information Patent Grant
Electronic device
- Patent number 11,916,059
- Issue date Feb 27, 2024
- Infineon Technologies AG
- Andre Schmenn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 11,127,733
- Issue date Sep 21, 2021
- Infineon Technologies AG
- Andre Schmenn
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Method for manufacturing an electronic device and electronic device
- Patent number 10,622,346
- Issue date Apr 14, 2020
- Infineon Technologies AG
- Andre Schmenn
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
High speed IGBT
- Patent number 8,378,427
- Issue date Feb 19, 2013
- University of Electronic Science and Technology
- Xingbi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverse mode SiGe HBT cascode device and fabrication method
- Patent number 8,212,291
- Issue date Jul 3, 2012
- Georgia Tech Research Corporation
- Tushar K. Thrivikraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having inductors and capacitors
- Patent number 7,939,909
- Issue date May 10, 2011
- Samsung Electronics Co., Ltd.
- Moon-chul Lee
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Single-chip common-drain JFET device and its applications
- Patent number 7,838,900
- Issue date Nov 23, 2010
- Richtek Technology Corp.
- Liang-Pin Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-chip common-drain JFET device and its applications
- Patent number 7,838,902
- Issue date Nov 23, 2010
- Richtek Technology Corp.
- Liang-Pin Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-chip common-drain JFET device and its applications
- Patent number 7,838,901
- Issue date Nov 23, 2010
- Richtek Technology Corp.
- Liang-Pin Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-chip common-drain JFET device and its applications
- Patent number 7,768,033
- Issue date Aug 3, 2010
- Richtek Technology Corp.
- Liang-Pin Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-chip common-drain JFET device and its applications
- Patent number 7,759,695
- Issue date Jul 20, 2010
- Richtek Technology Corp.
- Liang-Pin Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having two bipolar transistors constituting el...
- Patent number 7,714,389
- Issue date May 11, 2010
- NEC Electronics Corporation
- Masaharu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-chip common-drain JFET device and its applications
- Patent number 7,535,032
- Issue date May 19, 2009
- Richtek Technology Corp.
- Liang-Pin Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method in the fabrication of an integrated injection logic circuit
- Patent number 7,456,069
- Issue date Nov 25, 2008
- Infineon Technologies AG
- Ted Johansson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integration of three bipolar transistors in a semiconduc...
- Patent number 7,397,109
- Issue date Jul 8, 2008
- Atmel Germany GmbH
- Christoph Bromberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Redundant interconnect high current bipolar device and method of fo...
- Patent number 7,317,240
- Issue date Jan 8, 2008
- International Business Machines Corporation
- Michael D. Hulvey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor in CMOS flow
- Patent number 7,285,830
- Issue date Oct 23, 2007
- Texas Instruments Incorporated
- Amitava Chatterjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having inductors and capacitors and a fabrication method the...
- Patent number 7,169,684
- Issue date Jan 30, 2007
- Samsung Electronics Co., Ltd.
- Moon-chul Lee
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
MOS field effect transistor with reduced parasitic substrate conduc...
- Patent number 7,145,206
- Issue date Dec 5, 2006
- Micrel, Inc.
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Redundant interconnect high current bipolar device and method of fo...
- Patent number 6,998,699
- Issue date Feb 14, 2006
- International Business Machines Corporation
- Michael D. Hulvey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming lateral bipolar junction transistor in CMOS flow
- Patent number 6,987,039
- Issue date Jan 17, 2006
- Texas Instruments Incorporated
- Amitava Chatterjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar transistor
- Patent number 6,894,367
- Issue date May 17, 2005
- Infineon Technologies AG
- Peter Nelle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with reduced parasitic bipolar conduction
- Patent number 6,815,800
- Issue date Nov 9, 2004
- Micrel, Inc.
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor
- Patent number 6,734,522
- Issue date May 11, 2004
- Sharp Kabushiki Kaisha
- Yasuhiro Maruyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Redundant interconnect high current bipolar device
- Patent number 6,657,280
- Issue date Dec 2, 2003
- International Business Machines Corporation
- Michael D. Hulvey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an integrated emitter switching configuration us...
- Patent number 5,866,461
- Issue date Feb 2, 1999
- STMicroelectronics s.r.l.
- Santo Puzzolo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an IGBT and a current-regenerative d...
- Patent number 5,475,243
- Issue date Dec 12, 1995
- Fuji Electric Co., Ltd.
- Ryu Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PIN diode with a low peak-on effect
- Patent number 5,181,083
- Issue date Jan 19, 1993
- SGS-Thomson Microelectronics S.A.
- Robert Pezzani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power switch with thyristor
- Patent number 4,825,272
- Issue date Apr 25, 1989
- Siemens Aktiengesellschaft
- Erhard Lehmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PNPN integrated circuit protective device with integral resistor
- Patent number 4,631,567
- Issue date Dec 23, 1986
- Fujitsu Limited
- Masayuki Kokado
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC DEVICE
- Publication number 20220045046
- Publication date Feb 10, 2022
- INFINEON TECHNOLOGIES AG
- Andre SCHMENN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20200176438
- Publication date Jun 4, 2020
- INFINEON TECHNOLOGIES AG
- Andre SCHMENN
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
PASSIVE DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20160181242
- Publication date Jun 23, 2016
- Korea Electronics Technology Institute
- Jong Min YOOK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATCH-UP FREE VERTICAL TVS DIODE ARRAY STRUCTURE USING TRENCH ISOLA...
- Publication number 20140363930
- Publication date Dec 11, 2014
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SPEED IGBT
- Publication number 20100219446
- Publication date Sep 2, 2010
- UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY
- Xingbi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single-chip common-drain JFET device and its applications
- Publication number 20090237062
- Publication date Sep 24, 2009
- Liang-Pin Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inverse mode SiGe HBT cascode device and fabrication method
- Publication number 20090231034
- Publication date Sep 17, 2009
- Tushar K. Thrivikraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single-chip common-drain JFET device and its applications
- Publication number 20090206922
- Publication date Aug 20, 2009
- Liang-Pin Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single-chip common-drain JFET device and its applications
- Publication number 20090206921
- Publication date Aug 20, 2009
- Liang-Pin Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single-chip common-drain JFET device and its applications
- Publication number 20090201078
- Publication date Aug 13, 2009
- Liang-Pin Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single-chip common-drain JFET device and its applications
- Publication number 20090201079
- Publication date Aug 13, 2009
- Liang-Pin Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having two bipolar transistors constituting el...
- Publication number 20090108406
- Publication date Apr 30, 2009
- NEC ELECTRONICS CORPORATION
- Masaharu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMPLIFIER CIRCUIT
- Publication number 20080068088
- Publication date Mar 20, 2008
- Christoph Bromberger
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Device having inductors and capacitors
- Publication number 20070115702
- Publication date May 24, 2007
- Samsung Electronics Co., Ltd.
- Moon-chul Lee
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Redundant interconnect high current bipolar device and method of fo...
- Publication number 20060175634
- Publication date Aug 10, 2006
- International Business Machines Corporation
- Michael D. Hulvey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method in the fabrication of an integrated injection logic circuit
- Publication number 20060105517
- Publication date May 18, 2006
- Infineon Technologies AG
- Ted Johansson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming lateral bipolar junction transistor in CMOS flow
- Publication number 20060027895
- Publication date Feb 9, 2006
- Amitava Chatterjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for integration of three bipolar transistors in a semiconduc...
- Publication number 20060022306
- Publication date Feb 2, 2006
- ATMEL Germany GmbH
- Christoph Bromberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single-chip common-drain JFET device and its applications
- Publication number 20050285158
- Publication date Dec 29, 2005
- Liang-Pin Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Redundant interconnect high current bipolar device and method of fo...
- Publication number 20050189618
- Publication date Sep 1, 2005
- Michael D. Hulvey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS field effect transistor with reduced parasitic substrate conduc...
- Publication number 20050029582
- Publication date Feb 10, 2005
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar junction transistor with reduced parasitic bipolar conduction
- Publication number 20040110353
- Publication date Jun 10, 2004
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device having inductors and capacitors and a fabrication method the...
- Publication number 20030168716
- Publication date Sep 11, 2003
- Moon-Chul Lee
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Vertical bipolar transistor
- Publication number 20030155631
- Publication date Aug 21, 2003
- Peter Nelle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming lateral bipolar junction transistor in CMOS flow
- Publication number 20030062539
- Publication date Apr 3, 2003
- Amitava Chatterjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor
- Publication number 20020011609
- Publication date Jan 31, 2002
- Yasuhiro Maruyama
- H01 - BASIC ELECTRIC ELEMENTS

without components of the field effect type

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic device

Electronic device

Method for manufacturing an electronic device and electronic device

High speed IGBT

Inverse mode SiGe HBT cascode device and fabrication method

Device having inductors and capacitors

Single-chip common-drain JFET device and its applications

Single-chip common-drain JFET device and its applications

Single-chip common-drain JFET device and its applications

Single-chip common-drain JFET device and its applications

Single-chip common-drain JFET device and its applications

Semiconductor device having two bipolar transistors constituting el...

Single-chip common-drain JFET device and its applications

Method in the fabrication of an integrated injection logic circuit

Method for integration of three bipolar transistors in a semiconduc...

Redundant interconnect high current bipolar device and method of fo...

Lateral bipolar junction transistor in CMOS flow

Device having inductors and capacitors and a fabrication method the...

MOS field effect transistor with reduced parasitic substrate conduc...

Redundant interconnect high current bipolar device and method of fo...

Forming lateral bipolar junction transistor in CMOS flow

Vertical bipolar transistor

Bipolar junction transistor with reduced parasitic bipolar conduction

Transistor

Redundant interconnect high current bipolar device

Method for forming an integrated emitter switching configuration us...

Semiconductor device including an IGBT and a current-regenerative d...

PIN diode with a low peak-on effect

Semiconductor power switch with thyristor

PNPN integrated circuit protective device with integral resistor

Patents Applicationslast 30 patents

ELECTRONIC DEVICE

ELECTRONIC DEVICE

PASSIVE DEVICE AND MANUFACTURING METHOD THEREOF

LATCH-UP FREE VERTICAL TVS DIODE ARRAY STRUCTURE USING TRENCH ISOLA...

HIGH SPEED IGBT

Single-chip common-drain JFET device and its applications

Inverse mode SiGe HBT cascode device and fabrication method

Single-chip common-drain JFET device and its applications

Single-chip common-drain JFET device and its applications

Single-chip common-drain JFET device and its applications

Single-chip common-drain JFET device and its applications

Semiconductor device having two bipolar transistors constituting el...

AMPLIFIER CIRCUIT

Device having inductors and capacitors

Redundant interconnect high current bipolar device and method of fo...

Method in the fabrication of an integrated injection logic circuit

Forming lateral bipolar junction transistor in CMOS flow

Method for integration of three bipolar transistors in a semiconduc...

Single-chip common-drain JFET device and its applications

Redundant interconnect high current bipolar device and method of fo...

MOS field effect transistor with reduced parasitic substrate conduc...

Bipolar junction transistor with reduced parasitic bipolar conduction

Device having inductors and capacitors and a fabrication method the...

Vertical bipolar transistor

Forming lateral bipolar junction transistor in CMOS flow

Transistor