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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

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G11C11/1657Word-line or row circuits

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Patents Grantslast 30 patents

Information Patent Grant
One time programmable (OTP) magnetoresistive random-access memory (...
- Patent number 12,170,105
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Midpoint sensing reference generation for STT-MRAM
- Patent number 12,165,684
- Issue date Dec 10, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. Alam
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and method to enhance efficiency of memory
- Patent number 12,167,613
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hung-Chang Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point array IHOLD read margin improvement
- Patent number 12,148,459
- Issue date Nov 19, 2024
- SanDisk Technologies LLC
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance MTJ antifuse circuitry designs and methods of operation
- Patent number 12,142,309
- Issue date Nov 12, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. Alam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tetragonal half metallic half-Heusler compounds
- Patent number 12,136,447
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Sergey Faleev
- G11 - INFORMATION STORAGE
Information Patent Grant
One transistor one magnetic tunnel junction multiple bit magnetores...
- Patent number 12,108,610
- Issue date Oct 1, 2024
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory (MRAM) with end of life margi...
- Patent number 12,094,510
- Issue date Sep 17, 2024
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory and electronic device
- Patent number 12,073,863
- Issue date Aug 27, 2024
- Huawei Technologies Co., Ltd.
- Yue Pan
- G11 - INFORMATION STORAGE
Information Patent Grant
Device-region layout for embedded flash
- Patent number 12,068,032
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih Kuang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device including merged write driver
- Patent number 12,068,015
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Gyuseong Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated device and neuromorphic device
- Patent number 12,058,872
- Issue date Aug 6, 2024
- TDK Corporation
- Shogo Yamada
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory devices and operation methods thereof including a write volt...
- Patent number 12,051,456
- Issue date Jul 30, 2024
- Samsung Electronics Co., Ltd.
- Gyuseong Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory device
- Patent number 12,051,455
- Issue date Jul 30, 2024
- Samsung Electronics Co., Ltd.
- Yong Jae Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 12,041,855
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- MingYuan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,040,005
- Issue date Jul 16, 2024
- Samsung Electronics Co., Ltd.
- Gyuseong Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 12,035,636
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, memory system, and method of manufacturing memory de...
- Patent number 12,020,737
- Issue date Jun 25, 2024
- Kioxia Corporation
- Hisanori Aikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit-torque magnetoresistive random-access memory array
- Patent number 12,020,736
- Issue date Jun 25, 2024
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic junction memory device and writing method thereof
- Patent number 12,014,763
- Issue date Jun 18, 2024
- Samsung Electronics Co., Ltd.
- Chan Kyung Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device generating optimal write voltage based on size of mem...
- Patent number 12,009,020
- Issue date Jun 11, 2024
- Samsung Electronics Co., Ltd.
- Daeshik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cell, nonvolatile memory cell array, and informa...
- Patent number 11,996,130
- Issue date May 28, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Takashi Yokoyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistorless memory cell
- Patent number 11,990,169
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Neuromorphic device
- Patent number 11,984,146
- Issue date May 14, 2024
- Korea Institute of Science and Technology
- Seung Heon Baek
- G11 - INFORMATION STORAGE
Information Patent Grant
Back pattern counter measure for solid state drives
- Patent number 11,978,490
- Issue date May 7, 2024
- Western Digital Technologies, Inc.
- Ming Jin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device
- Patent number 11,968,908
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Physically unclonable function cell and operation method of same
- Patent number 11,967,351
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Che Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,961,545
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM reference current
- Patent number 11,961,546
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM memory array yield improvement
- Patent number 11,963,456
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Dimitri Houssameddine
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20240389354
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20240389355
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20240389470
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Kilho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20240381786
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE-REGION LAYOUT FOR EMBEDDED FLASH
- Publication number 20240355393
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih Kuang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM REFERENCE CURRENT
- Publication number 20240347090
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Ope...
- Publication number 20240339144
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240324471
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- MingYuan SONG
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240315147
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTORLESS MEMORY CELL
- Publication number 20240257853
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20240237551
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Application
RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEG...
- Publication number 20240224812
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Tao Li
- G11 - INFORMATION STORAGE
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION CELL AND OPERATION METHOD OF THE SAME
- Publication number 20240212732
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Che CHUNG
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20240203472
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE
- Publication number 20240188446
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Shravana Kumar Katakam
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH PERFORMANCE PROCESSOR FOR LOW-WAY AND HIGH-LATENCY MEMORY INST...
- Publication number 20240143457
- Publication date May 2, 2024
- NeuroBlade Ltd.
- Elad SITY
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO S...
- Publication number 20240119983
- Publication date Apr 11, 2024
- Samsung Electronics Co., Ltd.
- Daeshik KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING THREE-DIMENSIONAL RACETRACK AND OPERATING M...
- Publication number 20240079040
- Publication date Mar 7, 2024
- Samsung Electronics Co., Ltd.
- Youngnam HWANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-STATE SPINTRONIC DEVICE, MEMORY CELL, MEMORY ARRAY AND READ-W...
- Publication number 20240071451
- Publication date Feb 29, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huai LIN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE CONFIGURED TO GENERATE READ CURRENT BASED ON SIZE OF...
- Publication number 20240062795
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- Daeshik KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL ARRAY WITH INCREASED SOURCE BIAS VOLTAGE
- Publication number 20240049470
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Jun Wu
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device With Source Lines in Parallel
- Publication number 20240040936
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ku-Feng Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING BITLINE SEGMENTED INTO BITLINE SEGMENTS AND RE...
- Publication number 20240013828
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-LIEN LINUS LU
- G11 - INFORMATION STORAGE
Information Patent Application
SPINTRONIC DEVICE, MEMORY CELL, MEMORY ARRAY AND READ AND WRITE CIR...
- Publication number 20240013826
- Publication date Jan 11, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Guozhong Xing
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ONE-CYCLE RECONFIGURABLE IN-MEMORY LOGIC FOR NON-VOLATILE MEMORY
- Publication number 20240005976
- Publication date Jan 4, 2024
- Arizona Board of Regents on behalf of Arizona State University
- Deliang Fan
- G11 - INFORMATION STORAGE
Information Patent Application
Back Pattern Counter Measure for Solid State Drives
- Publication number 20230410866
- Publication date Dec 21, 2023
- Western Digital Technologies, Inc.
- Ming Jin
- G11 - INFORMATION STORAGE
Information Patent Application
SECURE WEAR LEVELLING OF NON-VOLATILE MEMORY BASED ON GALOIS FIELD...
- Publication number 20230410867
- Publication date Dec 21, 2023
- SANDISK TECHNOLOGIES LLC
- Martin Hassner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) WITH END OF LIFE MARGI...
- Publication number 20230410870
- Publication date Dec 21, 2023
- NXP USA, Inc.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20230380184
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20230380185
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS

Word-line or row circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

One time programmable (OTP) magnetoresistive random-access memory (...

Midpoint sensing reference generation for STT-MRAM

Circuit and method to enhance efficiency of memory

Cross-point array IHOLD read margin improvement

Low resistance MTJ antifuse circuitry designs and methods of operation

Tetragonal half metallic half-Heusler compounds

One transistor one magnetic tunnel junction multiple bit magnetores...

Magnetoresistive random access memory (MRAM) with end of life margi...

Memory and electronic device

Device-region layout for embedded flash

Memory device including merged write driver

Integrated device and neuromorphic device

Memory devices and operation methods thereof including a write volt...

Variable resistance memory device

Magnetic device and magnetic random access memory

Semiconductor device

Magnetic device and magnetic random access memory

Memory device, memory system, and method of manufacturing memory de...

Spin-orbit-torque magnetoresistive random-access memory array

Magnetic junction memory device and writing method thereof

Memory device generating optimal write voltage based on size of mem...

Nonvolatile memory cell, nonvolatile memory cell array, and informa...

Transistorless memory cell

Neuromorphic device

Back pattern counter measure for solid state drives

Magnetic tunnel junction device

Physically unclonable function cell and operation method of same

Circuit design and layout with high embedded memory density

MRAM reference current

MRAM memory array yield improvement

Patents Applicationslast 30 patents

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

NONVOLATILE MEMORY DEVICE

MAGNETIC TUNNEL JUNCTION DEVICES

DEVICE-REGION LAYOUT FOR EMBEDDED FLASH

MRAM REFERENCE CURRENT

Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Ope...

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

TRANSISTORLESS MEMORY CELL

MAGNETIC TUNNEL JUNCTION DEVICES

RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEG...

PHYSICALLY UNCLONABLE FUNCTION CELL AND OPERATION METHOD OF THE SAME

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE

HIGH PERFORMANCE PROCESSOR FOR LOW-WAY AND HIGH-LATENCY MEMORY INST...

MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO S...

MEMORY DEVICE INCLUDING THREE-DIMENSIONAL RACETRACK AND OPERATING M...

THREE-STATE SPINTRONIC DEVICE, MEMORY CELL, MEMORY ARRAY AND READ-W...

MEMORY DEVICE CONFIGURED TO GENERATE READ CURRENT BASED ON SIZE OF...

MEMORY CELL ARRAY WITH INCREASED SOURCE BIAS VOLTAGE

Memory Device With Source Lines in Parallel

MEMORY DEVICE HAVING BITLINE SEGMENTED INTO BITLINE SEGMENTS AND RE...

SPINTRONIC DEVICE, MEMORY CELL, MEMORY ARRAY AND READ AND WRITE CIR...

ONE-CYCLE RECONFIGURABLE IN-MEMORY LOGIC FOR NON-VOLATILE MEMORY

Back Pattern Counter Measure for Solid State Drives

SECURE WEAR LEVELLING OF NON-VOLATILE MEMORY BASED ON GALOIS FIELD...

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) WITH END OF LIFE MARGI...

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY