Word-line or row circuits

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G11C11/2257

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/2257Word-line or row circuits

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Write broadcast operations associated with a memory device
- Patent number 12,189,988
- Issue date Jan 7, 2025
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory devices and methods of manufacturing thereof
- Patent number 12,190,931
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Peng-Chun Liou
- G11 - INFORMATION STORAGE
Information Patent Grant
Structures for word line multiplexing in three-dimensional memory a...
- Patent number 12,176,020
- Issue date Dec 24, 2024
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- G11 - INFORMATION STORAGE
Information Patent Grant
Storing memory array operational information in non-volatile subarrays
- Patent number 12,158,826
- Issue date Dec 3, 2024
- Micron Technology, Inc.
- Christopher John Kawamura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional memory device and method
- Patent number 12,150,306
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia Yu Ling
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit including three-dimensional memory device
- Patent number 12,137,571
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory accessing with auto-precharge
- Patent number 12,136,448
- Issue date Nov 5, 2024
- Micron Technology, Inc.
- Shivam Swami
- G11 - INFORMATION STORAGE
Information Patent Grant
Word line precharging systems and methods
- Patent number 12,131,765
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- Angelo Visconti
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with content addressable memory units
- Patent number 12,131,780
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Detecting location within a network
- Patent number 12,114,225
- Issue date Oct 8, 2024
- Ivani, LLC
- John Wootton
- G01 - MEASURING TESTING
Information Patent Grant
One transistor and N memory element based memory bit-cell having st...
- Patent number 12,096,638
- Issue date Sep 17, 2024
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with compensated word line access delay
- Patent number 12,080,330
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Si Hong Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory cell access
- Patent number 12,062,389
- Issue date Aug 13, 2024
- Micron Technology, Inc.
- Umberto Di Vincenzo
- G11 - INFORMATION STORAGE
Information Patent Grant
Compute-in-memory device and method
- Patent number 12,063,786
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chieh Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array gate structures
- Patent number 12,051,750
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array including dummy regions
- Patent number 12,040,006
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Signal development caching in a memory device
- Patent number 11,989,450
- Issue date May 21, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Word line drivers for multiple-die memory devices
- Patent number 11,984,150
- Issue date May 14, 2024
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic allocation of a capacitive component in a memory device
- Patent number 11,984,187
- Issue date May 14, 2024
- Micron Technology, Inc.
- Fuad Badrieh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Local reference voltage generator for non-volatile memory
- Patent number 11,978,494
- Issue date May 7, 2024
- Infineon Technologies LLC
- Edwin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method for fabricating the same
- Patent number 11,963,363
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays, ferroelectric transistors, and methods of reading an...
- Patent number 11,955,156
- Issue date Apr 9, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile analog resistive memory cells implementing ferroelectr...
- Patent number 11,948,618
- Issue date Apr 2, 2024
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for activity-based memory maintenance operations and memory...
- Patent number 11,947,412
- Issue date Apr 2, 2024
- Dean D. Gans
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Read broadcast operations associated with a memory device
- Patent number 11,934,703
- Issue date Mar 19, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Sensing scheme for a memory with shared sense components
- Patent number 11,915,735
- Issue date Feb 27, 2024
- Micron Technology, Inc.
- Yuan He
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory operation bias and power domains
- Patent number 11,915,736
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric FET-based content addressable memory
- Patent number 11,908,505
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Lien Linus Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-element ferroelectric gain memory bit-cell having stacked and...
- Patent number 11,910,618
- Issue date Feb 20, 2024
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell biasing techniques
- Patent number 11,908,506
- Issue date Feb 20, 2024
- Micron Technology, Inc.
- Angelo Visconti
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...
- Publication number 20250022500
- Publication date Jan 16, 2025
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY CELL ACCESS
- Publication number 20250014623
- Publication date Jan 9, 2025
- Micron Technology, Inc.
- Umberto Di Vincenzo
- G11 - INFORMATION STORAGE
Information Patent Application
NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH MULTI...
- Publication number 20250014621
- Publication date Jan 9, 2025
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Application
DETECTING LOCATION WITHIN A NETWORK
- Publication number 20240430642
- Publication date Dec 26, 2024
- Ivani, LLC
- John Wootton
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240407173
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY WITH COMPENSATED WORD LINE ACCESS DELAY
- Publication number 20240395303
- Publication date Nov 28, 2024
- Micron Technology, Inc.
- Si Hong Kim
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH CONTENT ADDRESSABLE MEMORY UNITS
- Publication number 20240386957
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Array Isolation Structures
- Publication number 20240379778
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Chang Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...
- Publication number 20240379143
- Publication date Nov 14, 2024
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240381657
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia Yu Ling
- G11 - INFORMATION STORAGE
Information Patent Application
NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...
- Publication number 20240379144
- Publication date Nov 14, 2024
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Application
COMPUTE-IN-MEMORY DEVICE AND METHOD
- Publication number 20240365556
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SIGNAL DEVELOPMENT CACHING IN A MEMORY DEVICE
- Publication number 20240329885
- Publication date Oct 3, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Memory Array Including Dummy Regions
- Publication number 20240331754
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Application
READ BROADCAST OPERATIONS ASSOCIATED WITH A MEMORY DEVICE
- Publication number 20240281171
- Publication date Aug 22, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES
- Publication number 20240274184
- Publication date Aug 15, 2024
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- G11 - INFORMATION STORAGE
Information Patent Application
SENSING SCHEME FOR A MEMORY WITH SHARED SENSE COMPONENTS
- Publication number 20240274180
- Publication date Aug 15, 2024
- Micron Technology, Inc.
- Yuan He
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...
- Publication number 20240265960
- Publication date Aug 8, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR HIGH DENSITY BIT-CELL
- Publication number 20240257854
- Publication date Aug 1, 2024
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC ALLOCATION OF A CAPACITIVE COMPONENT IN A MEMORY DEVICE
- Publication number 20240257841
- Publication date Aug 1, 2024
- Micron Technology, Inc.
- Fuad Badrieh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240257856
- Publication date Aug 1, 2024
- Samsung Electronics Co., Ltd.
- Youngnam Hwang
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY
- Publication number 20240242750
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Lien Linus LU
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID FeRAM/OxRAM DATA STORAGE CIRCUIT
- Publication number 20240233794
- Publication date Jul 11, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Michele MARTEMUCCI
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE CHARGE INTEGRATION
- Publication number 20240212736
- Publication date Jun 27, 2024
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FABRICATING MEMORY DEVICE
- Publication number 20240215255
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE VOLTAGE CONTROL FOR REDUCED VOLTAGE DISTURBANCE DURING ME...
- Publication number 20240212735
- Publication date Jun 27, 2024
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR ACTIVITY-BASED MEMORY MAINTENANCE OPERATIONS AND MEMORY...
- Publication number 20240202056
- Publication date Jun 20, 2024
- Lodestar Licensing Group LLC
- Dean D. Gans
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS
- Publication number 20240161803
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine H. CHIANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND ME...
- Publication number 20240155845
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- TsuChing Yang
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID FeRAM/OxRAM DATA STORAGE CIRCUIT
- Publication number 20240135979
- Publication date Apr 25, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Michele MARTEMUCCI
- G11 - INFORMATION STORAGE

Word-line or row circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Write broadcast operations associated with a memory device

Semiconductor memory devices and methods of manufacturing thereof

Structures for word line multiplexing in three-dimensional memory a...

Storing memory array operational information in non-volatile subarrays

Three-dimensional memory device and method

Integrated circuit including three-dimensional memory device

Memory accessing with auto-precharge

Word line precharging systems and methods

Memory device with content addressable memory units

Detecting location within a network

One transistor and N memory element based memory bit-cell having st...

Memory array with compensated word line access delay

Ferroelectric memory cell access

Compute-in-memory device and method

Memory array gate structures

Memory array including dummy regions

Signal development caching in a memory device

Word line drivers for multiple-die memory devices

Dynamic allocation of a capacitive component in a memory device

Local reference voltage generator for non-volatile memory

Memory device and method for fabricating the same

Memory arrays, ferroelectric transistors, and methods of reading an...

Non-volatile analog resistive memory cells implementing ferroelectr...

Methods for activity-based memory maintenance operations and memory...

Read broadcast operations associated with a memory device

Sensing scheme for a memory with shared sense components

Ferroelectric memory operation bias and power domains

Ferroelectric FET-based content addressable memory

Multi-element ferroelectric gain memory bit-cell having stacked and...

Memory cell biasing techniques

Patents Applicationslast 30 patents

NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...

FERROELECTRIC MEMORY CELL ACCESS

NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH MULTI...

DETECTING LOCATION WITHIN A NETWORK

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

MEMORY ARRAY WITH COMPENSATED WORD LINE ACCESS DELAY

MEMORY DEVICE WITH CONTENT ADDRESSABLE MEMORY UNITS

Memory Array Isolation Structures

NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...

THREE-DIMENSIONAL MEMORY DEVICES

NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...

COMPUTE-IN-MEMORY DEVICE AND METHOD

SIGNAL DEVELOPMENT CACHING IN A MEMORY DEVICE

Memory Array Including Dummy Regions

READ BROADCAST OPERATIONS ASSOCIATED WITH A MEMORY DEVICE

WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES

SENSING SCHEME FOR A MEMORY WITH SHARED SENSE COMPONENTS

Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...

NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR HIGH DENSITY BIT-CELL

DYNAMIC ALLOCATION OF A CAPACITIVE COMPONENT IN A MEMORY DEVICE

SEMICONDUCTOR DEVICE

FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY

HYBRID FeRAM/OxRAM DATA STORAGE CIRCUIT

WORD LINE CHARGE INTEGRATION

METHOD FOR FABRICATING MEMORY DEVICE

WORD LINE VOLTAGE CONTROL FOR REDUCED VOLTAGE DISTURBANCE DURING ME...

METHODS FOR ACTIVITY-BASED MEMORY MAINTENANCE OPERATIONS AND MEMORY...

FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS

THREE-DIMENSIONAL FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND ME...

HYBRID FeRAM/OxRAM DATA STORAGE CIRCUIT