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G11C2013/0095Write using strain induced by

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Patents Grantslast 30 patents

Information Patent Grant
Phase-change memory
- Patent number 11,817,146
- Issue date Nov 14, 2023
- Rheinisch-Westfalische Technische Hochschule (RWTH) Aachen
- Shuai Wei
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory and electronic devices with reduced operational energy in ch...
- Patent number 10,311,949
- Issue date Jun 4, 2019
- Micron Technology, Inc.
- Roy E. Meade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanical forming of resistive memory devices
- Patent number 10,224,481
- Issue date Mar 5, 2019
- The Trustees of the University of Pennsylvania
- I-Wei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Data storing method of non-volatile memory device by assigning an i...
- Patent number 10,049,734
- Issue date Aug 14, 2018
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yoshikazu Katoh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices with reduced operational energy in phase change mate...
- Patent number 9,865,339
- Issue date Jan 9, 2018
- Micron Technology, Inc.
- Roy E. Meade
- G11 - INFORMATION STORAGE
Information Patent Grant
Memristor devices with a thermally-insulating cladding
- Patent number 9,716,224
- Issue date Jul 25, 2017
- Hewlett Packard Enterprise Development LP
- Gary Gibson
- G11 - INFORMATION STORAGE
Information Patent Grant
Devices and methods for controlling magnetic anisotropy with locali...
- Patent number 9,685,214
- Issue date Jun 20, 2017
- The Regents of the University of California
- Christopher S. Lynch
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile, piezoelectronic memory based on piezoresistive strain...
- Patent number 9,679,645
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Bruce G. Elmegreen
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device having resistance element
- Patent number 9,627,061
- Issue date Apr 18, 2017
- SK hynix Inc.
- Sung-Joon Yoon
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile, piezoelectronic memory based on piezoresistive strain...
- Patent number 9,251,884
- Issue date Feb 2, 2016
- International Business Machines Corporation
- Bruce G. Elmegreen
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance memory device and memory apparatus and data processing s...
- Patent number 9,214,223
- Issue date Dec 15, 2015
- SK Hynix Inc.
- Hyun Mi Hwang
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change material cell with piezoelectric or ferroelectric stre...
- Patent number 9,159,920
- Issue date Oct 13, 2015
- International Business Machines Corporation
- Catherine A. Dubourdieu
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for forming memory devices with reduced operational energy...
- Patent number 9,135,992
- Issue date Sep 15, 2015
- Micron Technology, Inc.
- Roy E. Meade
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change material cell with stress inducer liner
- Patent number 8,559,217
- Issue date Oct 15, 2013
- International Business Machines Corporation
- Catherine A. Dubourdieu
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods, structures, and devices for reducing operational energy in...
- Patent number 8,031,518
- Issue date Oct 4, 2011
- Micron Technology, Inc.
- Roy E. Meade
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PIEZOELECTRIC MEMORY
- Publication number 20240147873
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Application
Phase-change memory
- Publication number 20220215878
- Publication date Jul 7, 2022
- Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen
- Shuai WEI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY AND ELECTRONIC DEVICES WITH REDUCED OPERATIONAL ENERGY IN CH...
- Publication number 20180144796
- Publication date May 24, 2018
- Micron Technology, Inc.
- Roy E. Meade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMRISTOR DEVICES WITH A THERMALLY-INSULATING CLADDING
- Publication number 20160343938
- Publication date Nov 24, 2016
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Gary Gibson
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE, PIEZOELECTRONIC MEMORY BASED ON PIEZORESISTIVE STRAIN...
- Publication number 20160111154
- Publication date Apr 21, 2016
- International Business Machines Corporation
- Bruce G. Elmegreen
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES WITH REDUCED OPERATIONAL ENERGY IN PHASE CHANGE MATE...
- Publication number 20150380084
- Publication date Dec 31, 2015
- Micron Technology, Inc.
- Roy E. Meade
- G11 - INFORMATION STORAGE
Information Patent Application
DATA RECORDING METHOD AND NON-VOLATILE STORAGE DEVICE
- Publication number 20150364192
- Publication date Dec 17, 2015
- Panasonic Intellectual Property Management Co., Ltd.
- YUHEI YOSHIMOTO
- G11 - INFORMATION STORAGE
Information Patent Application
DATA STORING METHOD OF NON-VOLATILE MEMORY DEVICE, AND DATA WRITE C...
- Publication number 20150213890
- Publication date Jul 30, 2015
- Panasonic Intellectual Property Management Co., Ltd.
- Yoshikazu KATOH
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE MEMORY DEVICE AND MEMORY APPARATUS AND DATA PROCESSING S...
- Publication number 20140169067
- Publication date Jun 19, 2014
- SK HYNIX INC.
- Hyun Mi HWANG
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MATERIAL CELL WITH PIEZOELECTRIC OR FERROELECTRIC STRE...
- Publication number 20130309782
- Publication date Nov 21, 2013
- Centre National de la Recherche Scientifique
- Catherine A. Dubourdieu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130223139
- Publication date Aug 29, 2013
- Kimitoshi OKANO
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MATERIAL CELL WITH STRESS INDUCER LINER
- Publication number 20120147666
- Publication date Jun 14, 2012
- Centre National de la Recherche Scientifique
- Catherine A. Dubourdieu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ELEMENT HAVING ELASTICALLY DEFORMABLE ACTIVE REGION
- Publication number 20120074378
- Publication date Mar 29, 2012
- Wei Wu
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS, STRUCTURES, AND DEVICES FOR REDUCING OPERATIONAL ENERGY IN...
- Publication number 20120002465
- Publication date Jan 5, 2012
- Micron Technology, Inc.
- Roy E. Meade
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS, STRUCTURES, AND DEVICES FOR REDUCING OPERATIONAL ENERGY IN...
- Publication number 20100309714
- Publication date Dec 9, 2010
- Micron Technology, Inc.
- Roy E. Meade
- G11 - INFORMATION STORAGE

Write using strain induced by

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Phase-change memory

Memory and electronic devices with reduced operational energy in ch...

Mechanical forming of resistive memory devices

Data storing method of non-volatile memory device by assigning an i...

Memory devices with reduced operational energy in phase change mate...

Memristor devices with a thermally-insulating cladding

Devices and methods for controlling magnetic anisotropy with locali...

Non-volatile, piezoelectronic memory based on piezoresistive strain...

Electronic device having resistance element

Non-volatile, piezoelectronic memory based on piezoresistive strain...

Resistance memory device and memory apparatus and data processing s...

Phase change material cell with piezoelectric or ferroelectric stre...

Methods for forming memory devices with reduced operational energy...

Phase change material cell with stress inducer liner

Methods, structures, and devices for reducing operational energy in...

Patents Applicationslast 30 patents

PIEZOELECTRIC MEMORY

Phase-change memory

MEMORY AND ELECTRONIC DEVICES WITH REDUCED OPERATIONAL ENERGY IN CH...

MEMRISTOR DEVICES WITH A THERMALLY-INSULATING CLADDING

NON-VOLATILE, PIEZOELECTRONIC MEMORY BASED ON PIEZORESISTIVE STRAIN...

MEMORY DEVICES WITH REDUCED OPERATIONAL ENERGY IN PHASE CHANGE MATE...

DATA RECORDING METHOD AND NON-VOLATILE STORAGE DEVICE

DATA STORING METHOD OF NON-VOLATILE MEMORY DEVICE, AND DATA WRITE C...

RESISTANCE MEMORY DEVICE AND MEMORY APPARATUS AND DATA PROCESSING S...

PHASE CHANGE MATERIAL CELL WITH PIEZOELECTRIC OR FERROELECTRIC STRE...

SEMICONDUCTOR DEVICE

PHASE CHANGE MATERIAL CELL WITH STRESS INDUCER LINER

MEMORY ELEMENT HAVING ELASTICALLY DEFORMABLE ACTIVE REGION

METHODS, STRUCTURES, AND DEVICES FOR REDUCING OPERATIONAL ENERGY IN...

METHODS, STRUCTURES, AND DEVICES FOR REDUCING OPERATIONAL ENERGY IN...