Writing or programming circuits or methods

Industry

CPC
G11C11/2275

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/2275Writing or programming circuits or methods

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Memory with FRAM and SRAM of IC
- Patent number 12,165,707
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,166,123
- Issue date Dec 10, 2024
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with write pulse trimming
- Patent number 12,165,704
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hiroki Noguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Storing memory array operational information in non-volatile subarrays
- Patent number 12,158,826
- Issue date Dec 3, 2024
- Micron Technology, Inc.
- Christopher John Kawamura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional memory string array of thin-film ferroelectric tr...
- Patent number 12,160,996
- Issue date Dec 3, 2024
- SUNRISE MEMORY CORPORATION
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory accessing with auto-precharge
- Patent number 12,136,448
- Issue date Nov 5, 2024
- Micron Technology, Inc.
- Shivam Swami
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with content addressable memory units
- Patent number 12,131,780
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
System on chip (SOC) with processor and integrated ferroelectric me...
- Patent number 12,125,513
- Issue date Oct 22, 2024
- Seagate Technology LLC
- Jon D. Trantham
- G11 - INFORMATION STORAGE
Information Patent Grant
One transistor and N memory element based memory bit-cell having st...
- Patent number 12,096,638
- Issue date Sep 17, 2024
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Grant
Write disturb mitigation for column multiplexed non-linear polar ma...
- Patent number 12,094,511
- Issue date Sep 17, 2024
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric FET nonvolatile sense-amplifier-based flip-flop
- Patent number 12,087,344
- Issue date Sep 10, 2024
- UIF (University Industry Foundation), Yonsei University
- Seong Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric devices and ferroelectric memory cells
- Patent number 12,080,329
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Albert Liao
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell sensing using two step word line enabling
- Patent number 12,073,864
- Issue date Aug 27, 2024
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Unbalanced programmed data states in memory
- Patent number 12,068,016
- Issue date Aug 20, 2024
- Micron Technology, Inc.
- Christophe Laurent
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory cell access
- Patent number 12,062,389
- Issue date Aug 13, 2024
- Micron Technology, Inc.
- Umberto Di Vincenzo
- G11 - INFORMATION STORAGE
Information Patent Grant
Compute-in-memory array and module, and data computing method
- Patent number 12,046,283
- Issue date Jul 23, 2024
- Zhejiang University
- Yi Zhao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory array and operation method thereof
- Patent number 12,048,164
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Ling Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Bank configurable power modes
- Patent number 12,045,113
- Issue date Jul 23, 2024
- Micron Technology, Inc.
- Graziano Mirichigni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Imprint recovery for memory cells
- Patent number 12,040,038
- Issue date Jul 16, 2024
- Micron Technology, Inc.
- Jonathan D. Harms
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with ferroelectric charge trapping layer
- Patent number 12,041,782
- Issue date Jul 16, 2024
- Imec VZW
- Jan Van Houdt
- G11 - INFORMATION STORAGE
Information Patent Grant
Inductive energy harvesting and signal development for a memory device
- Patent number 12,033,716
- Issue date Jul 9, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G11 - INFORMATION STORAGE
Information Patent Grant
FeFET unit cells for neuromorphic computing
- Patent number 12,026,605
- Issue date Jul 2, 2024
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Charge-mirror based sensing for ferroelectric memory
- Patent number 12,027,192
- Issue date Jul 2, 2024
- Micron Technology, Inc.
- Xinwei Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Program and operating methods of nonvolatile memory device
- Patent number 12,020,761
- Issue date Jun 25, 2024
- Samsung Electronics Co., Ltd.
- Boh-Chang Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Imprint recovery management for memory systems
- Patent number 12,019,506
- Issue date Jun 25, 2024
- Micron Technology, Inc.
- Sukneet Singh Basuta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Program and operating methods of nonvolatile memory device
- Patent number 12,009,046
- Issue date Jun 11, 2024
- Samsung Electronics Co., Ltd.
- Boh-Chang Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Device and method for performing matrix operation
- Patent number 12,009,021
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Lien Linus Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Writing method and erasing method of fusion memory
- Patent number 12,002,500
- Issue date Jun 4, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell with multiple ferroelectric memory element...
- Patent number 11,996,144
- Issue date May 28, 2024
- Seagate Technology LLC
- Jon D. Trantham
- G11 - INFORMATION STORAGE
Information Patent Grant
Preconditioning operation for a memory cell with a spontaneously-po...
- Patent number 11,996,131
- Issue date May 28, 2024
- FERROELECTRIC MEMORY GMBH
- Johannes Ocker
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SYNAPSE DEVICE INCLUDING FERROELECTRIC FIELD EFFECT TRANSISTOR AND...
- Publication number 20240428838
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
UNBALANCED PROGRAMMED DATA STATES IN MEMORY
- Publication number 20240412768
- Publication date Dec 12, 2024
- Micron Technology, Inc.
- Christophe Laurent
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...
- Publication number 20240407174
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- G11 - INFORMATION STORAGE
Information Patent Application
INDUCTIVE ENERGY HARVESTING AND SIGNAL DEVELOPMENT FOR A MEMORY DEVICE
- Publication number 20240404567
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G11 - INFORMATION STORAGE
Information Patent Application
IMPRINT RECOVERY MANAGEMENT FOR MEMORY SYSTEMS
- Publication number 20240403158
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Sukneet Singh Basuta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FERROELECTRIC DEVICES AND FERROELECTRIC MEMORY CELLS
- Publication number 20240395302
- Publication date Nov 28, 2024
- Micron Technology, Inc.
- Albert Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH CONTENT ADDRESSABLE MEMORY UNITS
- Publication number 20240386957
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING SEMICONDUCTO...
- Publication number 20240363176
- Publication date Oct 31, 2024
- KIOXIA Corporation
- Viktoria Diana SCHLYKOW
- G11 - INFORMATION STORAGE
Information Patent Application
BANK CONFIGURABLE POWER MODES
- Publication number 20240353914
- Publication date Oct 24, 2024
- Micron Technology, Inc.
- Graziano Mirichigni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SIGNAL DEVELOPMENT CACHING IN A MEMORY DEVICE
- Publication number 20240329885
- Publication date Oct 3, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DEVICES, METHODS, AND SYSTEMS FOR CALIBRATING A SENSING CAPACITOR U...
- Publication number 20240312507
- Publication date Sep 19, 2024
- Ferroelectric Memory GmbH
- Alessandro PALLUDO
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED SEMICONDUCTOR RANDOM ACCESS MEMORY STRUCTURE AND CONTROL M...
- Publication number 20240306397
- Publication date Sep 12, 2024
- Peking University
- Qianqian HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
ERROR CORRECTION MEMORY DEVICE WITH FAST DATA ACCESS
- Publication number 20240303158
- Publication date Sep 12, 2024
- Micron Technology, Inc.
- Scott E. Schaefer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DEVICE AND METHOD FOR PERFORMING MATRIX OPERATION
- Publication number 20240304230
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Lien Linus LU
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE WITH MULTI-LEVEL BIT CELL
- Publication number 20240284680
- Publication date Aug 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Zhixing Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
READ BROADCAST OPERATIONS ASSOCIATED WITH A MEMORY DEVICE
- Publication number 20240281171
- Publication date Aug 22, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...
- Publication number 20240265960
- Publication date Aug 8, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICES, METHODS, AND SYSTEMS FOR CALIBRATING A READ VOLTAGE USED F...
- Publication number 20240265959
- Publication date Aug 8, 2024
- Ferroelectric Memory GmbH
- Stefano Sivero
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR INDEPENDENT MEMORY BANK MAINTENANCE AND MEMORY DEVICES...
- Publication number 20240257858
- Publication date Aug 1, 2024
- Lodestar Licensing Group LLC
- George B. Raad
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240257856
- Publication date Aug 1, 2024
- Samsung Electronics Co., Ltd.
- Youngnam Hwang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND WRITE METHOD
- Publication number 20240233795
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Sheng WEI
- G11 - INFORMATION STORAGE
Information Patent Application
BACK-END ACTIVE DEVICE AND LOGIC GATE
- Publication number 20240224538
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Application
THRESHOLD VOLTAGE-PROGRAMMABLE FIELD EFFECT TRANSISTOR-BASED MEMORY...
- Publication number 20240221810
- Publication date Jul 4, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE VOLTAGE CONTROL FOR REDUCED VOLTAGE DISTURBANCE DURING ME...
- Publication number 20240212735
- Publication date Jun 27, 2024
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE
- Publication number 20240206189
- Publication date Jun 20, 2024
- Huawei Technologies Co., Ltd
- Wanliang Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND ITS OPERATING METHOD
- Publication number 20240206187
- Publication date Jun 20, 2024
- Industry-University Cooperation Foundation Hanyang University ERICA Campus
- Younghyun Kim
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE USING BACK-END-OF-LINE (BEOL) THIN FILM...
- Publication number 20240196625
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng YOUNG
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC FIELD EFFECT TRANSISTORS BASED APPROACH FOR EUCLIDEAN...
- Publication number 20240194237
- Publication date Jun 13, 2024
- Universty of Cincinnati
- Siddharth Barve
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DEVICES, METHODS, AND SYSTEMS FOR A MULTILEVEL MEMORY CELL
- Publication number 20240185903
- Publication date Jun 6, 2024
- Ferroelectric Memory GmbH
- Stefano SIVERO
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD-PROGRAMMABLE FERRO-DIODES FOR RECONFIGURABLE IN-MEMORY-COMPUTING
- Publication number 20240177759
- Publication date May 30, 2024
- The Trustees of the University of Pennsylvania
- Deep JARIWALA
- H01 - BASIC ELECTRIC ELEMENTS

Writing or programming circuits or methods

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory with FRAM and SRAM of IC

Semiconductor device

Memory device with write pulse trimming

Storing memory array operational information in non-volatile subarrays

Three-dimensional memory string array of thin-film ferroelectric tr...

Memory accessing with auto-precharge

Memory device with content addressable memory units

System on chip (SOC) with processor and integrated ferroelectric me...

One transistor and N memory element based memory bit-cell having st...

Write disturb mitigation for column multiplexed non-linear polar ma...

Ferroelectric FET nonvolatile sense-amplifier-based flip-flop

Ferroelectric devices and ferroelectric memory cells

Memory cell sensing using two step word line enabling

Unbalanced programmed data states in memory

Ferroelectric memory cell access

Compute-in-memory array and module, and data computing method

Memory array and operation method thereof

Bank configurable power modes

Imprint recovery for memory cells

Memory device with ferroelectric charge trapping layer

Inductive energy harvesting and signal development for a memory device

FeFET unit cells for neuromorphic computing

Charge-mirror based sensing for ferroelectric memory

Program and operating methods of nonvolatile memory device

Imprint recovery management for memory systems

Program and operating methods of nonvolatile memory device

Device and method for performing matrix operation

Writing method and erasing method of fusion memory

Non-volatile memory cell with multiple ferroelectric memory element...

Preconditioning operation for a memory cell with a spontaneously-po...

Patents Applicationslast 30 patents

SYNAPSE DEVICE INCLUDING FERROELECTRIC FIELD EFFECT TRANSISTOR AND...

UNBALANCED PROGRAMMED DATA STATES IN MEMORY

SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...

INDUCTIVE ENERGY HARVESTING AND SIGNAL DEVELOPMENT FOR A MEMORY DEVICE

IMPRINT RECOVERY MANAGEMENT FOR MEMORY SYSTEMS

FERROELECTRIC DEVICES AND FERROELECTRIC MEMORY CELLS

MEMORY DEVICE WITH CONTENT ADDRESSABLE MEMORY UNITS

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING SEMICONDUCTO...

BANK CONFIGURABLE POWER MODES

SIGNAL DEVELOPMENT CACHING IN A MEMORY DEVICE

DEVICES, METHODS, AND SYSTEMS FOR CALIBRATING A SENSING CAPACITOR U...

EMBEDDED SEMICONDUCTOR RANDOM ACCESS MEMORY STRUCTURE AND CONTROL M...

ERROR CORRECTION MEMORY DEVICE WITH FAST DATA ACCESS

DEVICE AND METHOD FOR PERFORMING MATRIX OPERATION

FERROELECTRIC MEMORY DEVICE WITH MULTI-LEVEL BIT CELL

READ BROADCAST OPERATIONS ASSOCIATED WITH A MEMORY DEVICE

Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...

DEVICES, METHODS, AND SYSTEMS FOR CALIBRATING A READ VOLTAGE USED F...

METHODS FOR INDEPENDENT MEMORY BANK MAINTENANCE AND MEMORY DEVICES...

SEMICONDUCTOR DEVICE

MEMORY CIRCUIT AND WRITE METHOD

BACK-END ACTIVE DEVICE AND LOGIC GATE

THRESHOLD VOLTAGE-PROGRAMMABLE FIELD EFFECT TRANSISTOR-BASED MEMORY...

WORD LINE VOLTAGE CONTROL FOR REDUCED VOLTAGE DISTURBANCE DURING ME...

FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE

NON-VOLATILE MEMORY DEVICE AND ITS OPERATING METHOD

FERROELECTRIC MEMORY DEVICE USING BACK-END-OF-LINE (BEOL) THIN FILM...

FERROELECTRIC FIELD EFFECT TRANSISTORS BASED APPROACH FOR EUCLIDEAN...

DEVICES, METHODS, AND SYSTEMS FOR A MULTILEVEL MEMORY CELL

FIELD-PROGRAMMABLE FERRO-DIODES FOR RECONFIGURABLE IN-MEMORY-COMPUTING