Zone-melting with a solvent

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CPC
C30B13/02

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B13/00Single-crystal growth by zone-melting Refining by zone-melting

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C30B13/02Zone-melting with a solvent

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Patents Grantslast 30 patents

Information Patent Grant
Method for growing silicon carbide crystal
- Patent number 9,951,439
- Issue date Apr 24, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing silicon carbide crystal
- Patent number 9,945,047
- Issue date Apr 17, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming heterogeneous single garnet based crystals for p...
- Patent number 9,506,166
- Issue date Nov 29, 2016
- Clemson University Research Foundation
- Joseph W. Kolis
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for growing GZO (ZnO:Ga) crystals
- Patent number 9,458,553
- Issue date Oct 4, 2016
- Beijing University of Technology
- Yijian Jiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Deep-eutectic melt growth of nitride crystals
- Patent number 8,088,220
- Issue date Jan 3, 2012
- Crystal IS, Inc.
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Grant
III nitride single crystal and method of manufacturing semiconducto...
- Patent number 8,008,173
- Issue date Aug 30, 2011
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
III nitride single crystal manufacturing method
- Patent number 7,534,295
- Issue date May 19, 2009
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth in solution in a float zone of crystals of a compound or an...
- Patent number 6,663,711
- Issue date Dec 16, 2003
- Commissarat a l′Energie Atomique
- Jürgen Wollweber
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing single crystal
- Patent number 5,989,337
- Issue date Nov 23, 1999
- Japan Energy Corporation
- Kenji Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diamond single crystal
- Patent number 4,927,619
- Issue date May 22, 1990
- Sumitomo Electric Industries, Ltd.
- Kazuo Tsuji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of preparing a crystalline ingot of Hg.sub.1-x.sbsb.o Cd.sub...
- Patent number 4,765,863
- Issue date Aug 23, 1988
- S.A.T. (Societe Anonyme de Telecommunications)
- Alain R. L. Durand
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing a monocrystal of a compound by crystallizing...
- Patent number 4,728,388
- Issue date Mar 1, 1988
- Commissariat a l'Energie Atomique
- Alain Fillot
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for preparing crystals of Hg1-x Cdx Te
- Patent number 4,662,980
- Issue date May 5, 1987
- Societe Anonyme de Telecommunications
- Robert Triboulet
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing a polycrystalline alloy
- Patent number 4,654,196
- Issue date Mar 31, 1987
- Commissariat a l'Energie Atomique
- Alain Fillot
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing ternary or quaternary semiconductor compounds
- Patent number 4,564,415
- Issue date Jan 14, 1986
- Commissariat a l'Energie Atomique
- Alain Fillot
- C30 - CRYSTAL GROWTH
Information Patent Grant
Anode and cathode connections for the practice of electromigration
- Patent number 4,549,912
- Issue date Oct 29, 1985
- General Electric Company
- Thomas R. Anthony
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diamond single crystals, a process of manufacturing and tools for u...
- Patent number 4,544,540
- Issue date Oct 1, 1985
- Sumitomo Electric Industries, Ltd.
- Kazuo Tsuji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Synthesis of beryl crystals
- Patent number 4,537,653
- Issue date Aug 27, 1985
- Kabushiki Kaisha Suwa Seikosha
- Katsuhiro Teraishi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Temperature gradient zone melting apparatus
- Patent number 4,523,067
- Issue date Jun 11, 1985
- Hughes Aircraft Company
- Roger H. Brown
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for the thermo-migration of liquid phases
- Patent number 4,519,850
- Issue date May 28, 1985
- BBC Brown, Boveri & Company Limited
- Petra Kluge-Weiss
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a group IIB-VIB compound semiconductor crystal
- Patent number 4,465,527
- Issue date Aug 14, 1984
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Temperature gradient zone melting process employing a buffer layer
- Patent number 4,398,974
- Issue date Aug 16, 1983
- Hughes Aircraft Company
- Kuen Chow
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making anode and cathode connections for electromigration
- Patent number 4,381,598
- Issue date May 3, 1983
- General Electric Company
- Thomas R. Anthony
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing single crystal of yttrium-iron garnet or soli...
- Patent number 4,256,531
- Issue date Mar 17, 1981
- National Institute for Researches in Inorganic Materials
- Shigeyuki Kimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Guard ring for TGZM processing
- Patent number 4,233,934
- Issue date Nov 18, 1980
- General Electric Company
- Thomas R. Anthony
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for practicing temperature gradient zone melting
- Patent number 4,224,504
- Issue date Sep 23, 1980
- General Electric Company
- Carl A. Erikson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for practising temperature gradient zone melting
- Patent number 4,221,956
- Issue date Sep 9, 1980
- General Electric Company
- John O. Fielding
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device production
- Patent number 4,190,467
- Issue date Feb 26, 1980
- Western Electric Co., Inc.
- Suei-Yuen P. Lien
- C30 - CRYSTAL GROWTH
Information Patent Grant
Promotion of surface film stability during initiation of thermal mi...
- Patent number 4,178,192
- Issue date Dec 11, 1979
- General Electric Company
- Thomas R. Anthony
- C30 - CRYSTAL GROWTH
Information Patent Grant
Migration of uniform fine lines for bodies of semiconductor materia...
- Patent number 4,171,990
- Issue date Oct 23, 1979
- General Electric Company
- Harvey E. Cline
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
A Method for Growing GZO (ZnO:Ga) Crystals
- Publication number 20160230308
- Publication date Aug 11, 2016
- Yijian Jiang
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING SILICON CARBIDE CRYSTAL
- Publication number 20150159299
- Publication date Jun 11, 2015
- SHIN-ETSU CHEMICAL CO., LTD.
- Naofumi SHINYA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING SILICON CARBIDE CRYSTAL
- Publication number 20150159297
- Publication date Jun 11, 2015
- Shin-Etsu Chemical Co., Ltd.
- Naofumi SHINYA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED S...
- Publication number 20140299047
- Publication date Oct 9, 2014
- Trustees of Dartmouth College
- Praveen Chaudhari
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED S...
- Publication number 20120252192
- Publication date Oct 4, 2012
- Trustees of Dartmouth College
- Praveen Chaudhari
- C30 - CRYSTAL GROWTH
Information Patent Application
III Nitride Single Crystal and Method of Manufacturing Semiconducto...
- Publication number 20090197398
- Publication date Aug 6, 2009
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
DEEP-EUTECTIC MELT GROWTH OF NITRIDE CRYSTALS
- Publication number 20090050050
- Publication date Feb 26, 2009
- Crystal IS, Inc.
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Application
III Nitride Single Crystal, and Manufacturing Method Therefor and S...
- Publication number 20080169532
- Publication date Jul 17, 2008
- Sumitomo Electric Industries
- Seiji Nakahata
- C30 - CRYSTAL GROWTH

Zone-melting with a solvent

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for growing silicon carbide crystal

Method for growing silicon carbide crystal

Method for forming heterogeneous single garnet based crystals for p...

Method for growing GZO (ZnO:Ga) crystals

Deep-eutectic melt growth of nitride crystals

III nitride single crystal and method of manufacturing semiconducto...

III nitride single crystal manufacturing method

Growth in solution in a float zone of crystals of a compound or an...

Method of growing single crystal

Diamond single crystal

Method of preparing a crystalline ingot of Hg.sub.1-x.sbsb.o Cd.sub...

Process for producing a monocrystal of a compound by crystallizing...

Process for preparing crystals of Hg1-x Cdx Te

Process for producing a polycrystalline alloy

Process for producing ternary or quaternary semiconductor compounds

Anode and cathode connections for the practice of electromigration

Diamond single crystals, a process of manufacturing and tools for u...

Synthesis of beryl crystals

Temperature gradient zone melting apparatus

Process for the thermo-migration of liquid phases

Method for producing a group IIB-VIB compound semiconductor crystal

Temperature gradient zone melting process employing a buffer layer

Method of making anode and cathode connections for electromigration

Process for producing single crystal of yttrium-iron garnet or soli...

Guard ring for TGZM processing

Apparatus for practicing temperature gradient zone melting

Apparatus for practising temperature gradient zone melting

Semiconductor device production

Promotion of surface film stability during initiation of thermal mi...

Migration of uniform fine lines for bodies of semiconductor materia...

Patents Applicationslast 30 patents

A Method for Growing GZO (ZnO:Ga) Crystals

METHOD FOR GROWING SILICON CARBIDE CRYSTAL

METHOD FOR GROWING SILICON CARBIDE CRYSTAL

METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED S...

METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED S...

III Nitride Single Crystal and Method of Manufacturing Semiconducto...

DEEP-EUTECTIC MELT GROWTH OF NITRIDE CRYSTALS

III Nitride Single Crystal, and Manufacturing Method Therefor and S...