10-Transistor Non-Volatile Static Random-Access Memory Using A Single Non-Volatile Memory Element And Method Of Operation Thereof

Abstract

A memory including an array of nvRAM cells and method of operating the same are provided. Each nvRAM cell includes a volatile charge storage circuit, and a non-volatile charge storage circuit including a solitary non-volatile memory (NVM) device, a first transistor coupled to the NVM device through which data is coupled to the volatile charge storage circuit, a second transistor coupled to the NVM device through which a compliment of the data is coupled to the volatile charge storage circuit and a third transistor through which the NVM device is coupled to a positive voltage supply line (VCCT). In one embodiment, the first transistor is coupled to a first node of the NVM device, the second transistor is coupled to a second node of the NVM device and the third transistor is coupled between the first node and VCCT. Other embodiments are also disclosed.

Description

TECHNICAL FIELD

This disclosure relates generally to semiconductor memories and more particularly to a Non-Volatile Random-Access Memory (nvRAM) including nvRAM cells having a reduced number of transistors and methods of operating the same.

BACKGROUND

Computer systems and portable electronic devices such as tablets and smart phones require large capacity, high speed volatile and non-volatile storage of data. Present types of semiconductor memory that use a combination of specialized volatile and non-volatile technologies. One type of volatile memory is static random-access memory (SRAM) which is often implemented using a bistable transistor flip-flop or latching circuit. The word “static” indicates that the memory retains its contents as long as power remains applied. “Random access” means that locations in the memory can be written to or read from in any order, regardless of the memory location that was accessed last. SRAMs offer advantages including reliability and fast reading and writing of the stored data, however the data retained in the SRAM cell is volatile. Interruption of the power supply source causes loss of the data in the SRAM cell.

A non-volatile SRAM (nvSRAM) includes an SRAM cell coupled with two or more nonvolatile memory transistors to store data written to the SRAM cell in the event of an interruption of power. The nonvolatile memory transistors may be implemented in different ways, for example using a Silicon Oxide Nitride Oxide Silicon (SONOS) transistor or a floating gate transistor in which a stored charge that modifies the transistor's voltage threshold.

One disadvantage of present nvSRAM circuits is their limited density and relatively large memory cell size, typically including 12 or more transistors per nvSRAM cell and exceeding about 100 μm² in size, limiting memory density and operating speed.

Thus, there is a need for a non-volatile latch which overcomes the shortcomings of the conventional NVL cell architecture.

SUMMARY

A memory including an array of nvRAM cells and method of operating the same are provided. Each nvRAM cell includes a volatile charge storage circuit, and a non-volatile charge storage circuit. The volatile charge storage circuit can include a cross-coupled static random access memory (SRAM) latch. The non-volatile charge storage circuit generally includes or consists of a solitary non-volatile memory (NVM) device, a first transistor coupled to the NVM device through which data is coupled to the volatile charge storage circuit, a second transistor coupled to the NVM device through which a compliment of the data is coupled to the volatile charge storage circuit and a third transistor through which the NVM device is coupled to a positive voltage supply line (VCCT).

In one embodiment, the first transistor is coupled to a first node of the NVM device, the second transistor is coupled to a second node of the NVM device and the third transistor is coupled the first node and VCCT. Other embodiments are also disclosed.

In another embodiment, the third transistor of the non-volatile charge storage circuit is coupled between VCCT and a first node of the NVM device, and the first and second transistors are couple to a second node of the NVM device.

The NVM device can include or consist of exactly one silicon-oxide-nitride-oxide-silicon (SONOS) transistor, or exactly one polysilicon floating gate transistor.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention will be understood more fully from the detailed description that follows and from the accompanying drawings and the appended claims provided below, where:

FIG. 1 is a schematic diagram of a Non-Volatile Random-Access Memory (nvRAM) cell according to an embodiment of the present disclosure;

FIG. 2 is a schematic diagram of a nvRAM cell according to another embodiment of the present disclosure;

FIG. 3 is a flow chart illustrating an embodiment of a method for the STORE operation according to the present disclosure;

FIG. 4 is a timing diagram for describing a STORE operation associated with a nvRAM cell according to an embodiment of the present disclosure;

FIG. 5 is a portion of a Non-Volatile Random-Access Memory including a clamping circuit and an nvRAM cell according to an embodiment of the present disclosure;

FIG. 6 is a portion of a Non-Volatile Random-Access Memory including a clamping circuit and an nvRAM cell according to another embodiment of the present disclosure;

FIG. 7 is a flow chart illustrating an embodiment of a method for a RECALL operation according to the present disclosure; and

FIG. 8 is a block diagram of a semiconductor memory including microcontroller and an array of nvRAM cells according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

The present disclosure is directed generally to semiconductor memories and more particularly to a memory including a volatile charge storage circuit, and a non-volatile charge storage circuit including or consisting of a solitary non-volatile memory (NVM) device, and methods of operating the same to recall non-inverted data from the non-volatile charge storage circuit for every RECALL operation.

In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be evident, however, to one skilled in the art that the present invention may be practiced without these specific details. In other instances, well-known structures, and techniques are not shown in detail or are shown in block diagram form in order to avoid unnecessarily obscuring an understanding of this description.

Reference in the description to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of the phrase “in one embodiment” in various places in the specification do not necessarily all refer to the same embodiment. The term to couple as used herein may include both to directly electrically connect two or more components or elements and to indirectly connect through one or more intervening components.

The terms “over,” “under,” “between,” and “on” as used herein refer to a relative position of one layer with respect to other layers. As such, for example, one layer deposited or disposed over or under another layer may be directly in contact with the other layer or may have one or more intervening layers. Moreover, one layer deposited or disposed between layers may be directly in contact with the layers or may have one or more intervening layers. In contrast, a first layer “on” a second layer is in contact with that second layer. Additionally, the relative position of one layer with respect to other layers is provided assuming operations deposit, modify and remove films relative to a starting substrate without consideration of the absolute orientation of the substrate.

A first embodiment of a Non-Volatile Random-Access Memory (nvRAM) cell 100 including a volatile charge storage circuit 102, and a non-volatile charge storage circuit 104 including or consisting of a solitary non-volatile memory (NVM) device 106 will now be described with reference to FIG. 1.

FIG. 1 illustrates a single nvRAM cell 100, but it should be appreciated that an nvRAM memory typically includes an array of a plurality of nvRAM cells that are integrated with other peripheral circuits described in greater detail below, onto a semiconductor chip to form the nvRAM memory. Additionally, an nvRAM cell 100 typically includes a number of transistors, capacitors, and resistors, not all of which are shown as being unnecessary for an explanation or understanding of the nvRAM cell of the present disclosure and its operation.

The NVM device 106 can be implemented using exactly one Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) transistor, a floating-gate MOS field-effect transistor (FGMOS), or a ferroelectric random access memory (FeRAM) device. The NVM device 106 can be programmed or erased by a control signal VSE coupled to a gate node of the NVM device.

Generally, a SONOS transistor includes a gate stack formed over a substrate. The SONOS transistor further includes source/drain regions formed in a well in the substrate on either side of gate stack, which define a channel region underneath gate stack. Gate stack includes an oxide tunnel dielectric layer, one or more nitride or oxynitride charge-trapping layers, a top, blocking oxide layer and a poly-silicon (poly) or metal layer which serves as a control gate. When a negative bias is applied to the gate relative to the substrate or well, charge accumulated in the channel region is injected or tunnels through tunnel dielectric layer and are trapped in the charge-trapping layers, changing the threshold voltage (V_T) necessary to turn on the SONOS transistor. Generally, an erased SONOS transistor has a zero data state with a relatively high erased threshold voltage (V_TE).

Generally, a FGMOS transistor is similar in structure to the SONOS transistor described above, differing primarily in that a FGMOS transistor includes a poly-silicon (poly) floating gate, which is capacitively coupled to a control gate of the transistor, rather than a nitride or oxynitride charge-trapping layers. Similar to the SONOS transistor described above the FGMOS transistor can be erased by applying an appropriate bias between the control gate and a well terminal to inject a charge (holes) on to the floating gate, lowering the threshold voltage V_T necessary to turn on the FGMOS transistor.

FeRAM is a non-volatile random-access memory technology similar in construction to flash memory, such as DRAM, but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is operated similar to flash memory. Erasing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the “up” or “down” orientation (depending on the polarity of the charge), thereby storing a “1” or “0”. [Would FeRAM work or should I remove this paragraph?]

Referring to FIG. 1 the non-volatile charge storage circuit 104 generally includes, in addition to the NVM device 106 a first transistor or normal program transistor 108 through which a data true node (dt) in the volatile charge storage circuit 102 is coupled to a first node or terminal of the NVM device 106, shown here as a data true node (dt1) in the non-volatile charge storage circuit 104. The normal program transistor 108 can be any suitable transistor, including a bipolar, field effect transistor (FET) or metal oxide semiconductor (MOSFET), and in the embodiment shown is a N-type FET controlled by a control signal (VNP) applied to a gate node or terminal of the normal program transistor to couple data true node (dt) in the volatile charge storage circuit 102 to the first node of the NVM device 106, data true node (dt1), to normal program the NVM device during a STORE operation.

The non-volatile charge storage circuit 102 further includes a second transistor or recall transistor 110 through which a data complement node (dc) in the volatile charge storage circuit 102 is coupled to a second node or terminal of the NVM device 106, shown here as a data complement node (dc1) in the non-volatile charge storage circuit 104. As with the normal program transistor 108, the recall transistor 110 can be any suitable transistor, and in the embodiment shown is a NFET controlled by a control signal (VRCL) applied to a gate node or terminal of the recall transistor to couple data complement node (dc) in the volatile charge storage circuit 102 to the second node of the NVM device 106, data complement node (dc1), to recall data from the NVM device to the volatile charge storage circuit during a RECALL operation.

The non-volatile charge storage circuit 104 further includes a third transistor or bulk program transistor 112 coupled between the first node of the NVM device 106, data true node (dt1) in the non-volatile charge storage circuit 104, and a positive voltage supply line (VCCT) in the non-volatile charge storage circuit. The bulk program transistor 112 can be any suitable transistor, and in the embodiment shown is a NFET controlled by a control signal (VRCL) applied to a gate node or terminal of the recall transistor to couple the first node of the NVM device 106, data true node (dt1), to VCCT during a bulk program operation.

Referring to FIG. 1 the volatile charge storage circuit 102 generally includes a cross-coupled static random access memory (SRAM) latch that has two stable states and is capable, as long as power is being provided, of receiving a bit of data from an exterior environment, retaining the bit of data, and transmitting the bit of data back to the exterior environment. If power is removed from the volatile charge storage circuit 102, the data will be lost. The volatile charge storage circuit 102 prevents loss of the bit of data by storing the bit of data in the non-volatile charge storage circuit 104, and recalling the bit of data to the volatile charge storage circuit 102 when power is restored.

The volatile charge storage circuit 102 generally includes a bitline transistor 114, a bitline complement transistor 116, a first cross coupled inverter formed by transistors 118, 120 and the second cross coupled inverter formed by transistors 122, 124. In a standby state, the circuit is idle, the wordline (WL) is not asserted and so transistors 114, 116 disconnect the volatile charge storage circuit 102 from the bitline true (BT) and bitline complement (BC).

FIG. 2 is a schematic diagram of a nvRAM cell 200 according to another embodiment of the present disclosure. As with the nvRAM cell 100 described above, the nvRAM cell 200 includes a volatile charge storage circuit 202, and a non-volatile charge storage circuit 204 including or consisting of a NVM device 206.

As with the NVM device 106 described above, the NVM device 206 can be implemented using exactly SONOS transistor, exactly one FGMOS transistor, or exactly one FeRAM device. The NVM device 206 can be programmed or erased by a control signal VSE coupled to a gate node of the NVM device.

Referring to FIG. 1 the non-volatile charge storage circuit 204 generally includes, in addition to the NVM device 206, a first transistor or normal program transistor 208 through which a data true node (dt) in the volatile charge storage circuit 202 is coupled to a first node or terminal of the NVM device, shown here as a data complement node (dc1) in the non-volatile charge storage circuit 204. The normal program transistor 208 can be any suitable transistor, including a bipolar, FET or MOSFET, and in the embodiment shown is a N-type FET controlled by a control signal (VNP) applied to a gate node or terminal of the normal program transistor to couple data true node (dt) in the volatile charge storage circuit 202 to the first node of the NVM device 206, data complement node (dc1), to normal program the NVM device during a STORE operation.

The non-volatile charge storage circuit 202 further includes a second transistor or recall transistor 210 through which a data complement node (dc) in the volatile charge storage circuit 202 is coupled to the first node or terminal of the NVM device 206, shown here as a data complement node (dc1), in the non-volatile charge storage circuit 204. As with the normal program transistor 208, the recall transistor 210 can be any suitable transistor, and in the embodiment shown is a NFET controlled by a control signal (VRCL) applied to a gate node or terminal of the recall transistor to couple data complement node (dc) in the volatile charge storage circuit 202 to the first node of the NVM device 206, data complement node (dc1), to recall data from the NVM device to the volatile charge storage circuit 202 during a RECALL operation.

The non-volatile charge storage circuit 204 further includes a third transistor or bulk program transistor 212 coupled between a second node of the NVM device 206, data true node (dt1) in the non-volatile charge storage circuit 204, and a positive voltage supply line (VCCT) in the non-volatile charge storage circuit. The bulk program transistor 212 can be any suitable transistor, and in the embodiment shown is a NFET controlled by a control signal (VRCL) applied to a gate node or terminal of the recall transistor to couple the second node of the NVM device 206, data true node (dt1), to VCCT during a bulk program operation.

Referring to FIG. 2 the volatile charge storage circuit 202 generally includes a cross-coupled SRAM latch that has two stable states and is capable, as long as power is being provided, of receiving a bit of data from an exterior environment, retaining the bit of data, and transmitting the bit of data back to the exterior environment.

The volatile charge storage circuit 202 generally includes a bitline transistor 214, a bitline complement transistor 216, a first cross coupled inverter formed by transistors 218, 220 and the second cross coupled inverter formed by transistors 222, 224. In a standby state, the circuit is idle, the wordline (WL) is not asserted and so transistors 214, 216 disconnect the volatile charge storage circuit 202 from the bitline true (BT) and bitline complement (BC).

A STORE operation for transferring or storing data from the volatile charge storage circuit of an nvRAM cell according to the embodiment of FIG. 1 or FIG. 2 to the non-volatile charge storage circuit will now be described with reference to FIGS. 3 and 4. FIG. 3 is a flow chart illustrating an embodiment of a method for the STORE operation according to the present disclosure. FIG. 4 is a timing diagram for a STORE operation associated with an nvRAM cell according to the embodiment of FIG. 1 or FIG. 2.

Referring to FIGS. 3 and 4 the STORE operation has three phases beginning with a bulk program (BP) of every nvRAM cell 100/200 in an array or selected row in the array (302). This can be accomplished by setting a control signal VSE 402 coupled to the gate node of the NVM device 106/206 to a positive high voltage and turning ON bulk program transistor 112/212 with a control signal VBP 404 while for a first predetermined period. The positive high voltage applied to the gate node of the NVM device 106/206 can be from about ______ to about ______, and in the embodiment shown is about 9.75 V, which is applied for a duration of about ______ to about ______ milliseconds (ms) or about 1 ms to bulk program (BP) the NVM device. Bulk program transistor 112/212 is turned ON by setting control signal VBP 404 to ______ (VHSPS). As shown in FIG. 4 there is a brief delay 406 of from about ______ to about ______ μs while the control signal VSE 402 coupled to the gate node of the NVM device precharges to VHSPS before rising to the full positive high voltage of about 9.75 V in the embodiment shown. [Can you quantify the duration of the delay 406? Is there any advantage to the delay? Or is it an inevitable or undesirable consequence of the circuit? If the latter, perhaps we should we delete it from the drawings/description?]

Next, every nvRAM cell 100/200 in the array or selected row in the array is bulk erased to set the NVM device 106/206 to an erased state (304). This can be accomplished by setting the control signal VSE 402 coupled to the gate node of the NVM device 106/206 to a negative high voltage for a second predetermined period while maintaining Bulk program transistor 112/212 by continuing to apply a control signal VBP 404 of VHSPS. The negative high voltage applied to the gate node of the NVM device 106/206 can be from about ______ to about ______, and in the embodiment shown is about −10.5 V, which is applied for a duration of about ______ to about ______ milliseconds (ms) or about 3 ms to bulk erase (EP) the NVM device.

Finally, nvRAM cell(s) 100/200 in the array or selected row in the array are programmed in a normal program phase during which VSE is set to series of positive high voltages to STORE data from the data true node (dt) in the volatile charge storage circuit 102/202 to the non-volatile charge storage circuit 104/204 (306).

Referring to FIG. 4, the normal program phase begins with setting the positive voltage supply line (VCCT 408) to a positive voltage while of turning OFF Bulk program transistor 112/212 by removing VHSPS from control signal VBP 404, and setting the control signal VSE 402 to a series of program pulses 410. The NVM device(s) 106/206 is then programmed by setting control signal VNP 412 coupled to the gate node of the normal program transistor 108/208 to a positive voltage. The positive voltage applied to the gate node of the normal program transistor 108/208 is the substantially equal to the positive voltage applied to the positive voltage supply line (VCCT 408), a positive inhibit voltage (VCCI) of about 1.8V in the embodiment shown. The series of program pulses 410 applied to the gate node of the NVM device 106/206 can have a peak voltage from about ______ to about ______, and in the embodiment shown is about 9.75 V, the same as for VSE 402 in the bulk program (BP) phase. The series of program pulses can include from 2 to about ______ individual program pulses, each having a pulse width and time period between pulses of from about ______ to about ______ milliseconds (ms). It is note that the pulse width and duration of time between the program pulses need not be the same. In the embodiment shown the series of program pulses includes three substantially equal program pulses 410, each having a substantially equal pulse width and duration of time between the program pulses of about 0.2 ms. Again, as shown in FIG. 4 for each 410 there is a brief delay 406 while the control signal VSE 402 coupled to the gate node of the NVM device precharges to VHSPS before rising to the full positive high voltage of about 9.75 V. Generally, the duration of this brief delay 406 is the same as for the bulk program (BP) phase. [Is this correct? Is the time delay for the program pulses the same for the bulk program?]

When data stored in the data true node (dt) of the volatile charge storage circuit 102/202 is a logical ‘0’, normal programming is achieved through the normal program transistor 108/208 being ON and the NVM device 106/206 is programmed.

When data stored in the data true node (dt) of the volatile charge storage circuit 102/202 is a logical ‘1’, normal programming will not occur since the normal program transistor 108/208 OFF, and the NVM device 106/206 remains erased.

Applying a series of program pulses 410 to the gate node of the NVM device(s) 106/206, rather than a single, continuous positive high voltage as in conventional memories, mitigates the impact of a Dynamic Write Inhibit (DWI) during a DWI time frame 414 from the data complement node (dc) in the volatile charge storage circuit 102/202, when data stored in the data true node (dt) of the volatile charge storage circuit 102/202 is a logical ‘1’.

By Dynamic Write Inhibit (DWI) it is meant is a method of selectively inhibiting the programming (STORING data to NVM devices) of non-selected nvRAM cells by applying a negative DWI voltage of from about ______ to about ______ to the complement bitlines (BC) of the nvRAM cells. When this voltage is applied to the complement bitlines (BC) of a selected nvRAM cells it can result in ______ due to gate induced drain leakage (GIDL) through the recall transistor 110/210. Applying a series of program pulses 410 to the gate node of the NVM device(s) 106/206 rather than a single, continuous positive high voltage mitigates the impact of DWI during the DWI time frame 414 by minimizing the time for which the recall transistor 110/210 is exposed to the voltage differential between the positive high voltage at a data complement node (dc1) in the isolate the non-volatile charge storage circuit 104/204 the voltage at the data complement node (dc) in the volatile charge storage circuit 102/202, thereby minimizing GIDL through the recall transistor 110/210, and mitigating the impact of a DWI during a DWI time frame 414, when data stored in the data true node (dt) of the volatile charge storage circuit 102/202 is a logical ‘1’. [Apologies but I need clarification on how DWI works in the subject application, and more importantly what the issues are and how your program pulse mitigates it.]

The control signal RCL 416 coupled to the gate node of the recall transistor remains at 0V throughout the STORE operation to isolate the non-volatile charge storage circuit 104/204 of the nvRAM cell 100/200 from the data complement node (dc) in the volatile charge storage circuit 102/202.

A RECALL operation for transferring or recalling data from the non-volatile charge storage circuit of an nvRAM cell according to the embodiment of FIG. 1 or FIG. 2 to the volatile charge storage circuit will now be described with reference to FIGS. 5 through 7.

FIG. 5 is a portion of a Non-Volatile Random-Access Memory (nvRAM 500) including the nvRAM cell 100 of FIG. 1, a clamping circuit 502, and a negative supply voltage (VSS) transistor 504. Referring to FIG. 5, the clamping circuit 502, includes a first P-type transistor 506 through which the positive voltage supply line (VCCI) in the volatile charge storage circuit *** is coupled to a supply voltage (VPWR), and an N-type transistor 508 through which VCCI is coupled to VSSI. The VSS transistor 504 is coupled between negative voltage supply line (VSSI) in the volatile charge storage circuit *** and ground to ground the VSSI during a RECALL operation, limiting the current through the volatile charge storage circuit 102/202. The nvRAM 500 further includes a first VCC transistor 510 through which the positive voltage supply line (VCCT) in the non-volatile charge storage circuit *** can be coupled to VPWR, and a second VCC transistor 512 through which VCCT can be coupled to ground.

FIG. 6 is a portion of an nvRAM 600 according to another embodiment of the present disclosure including the nvRAM cell 200 of FIG. 2, a clamping circuit 602, and a negative supply voltage (VSS) transistor 604. Referring to FIG.6, the clamping circuit 602, includes a first P-type transistor 606 through which VCCI in the volatile charge storage circuit *** is coupled to VPWR, and an N-type transistor 608 through which VCCI is coupled to VSSI. The VSS transistor 604 is coupled between negative voltage supply line (VSSI) in the volatile charge storage circuit *** and ground to ground the VSSI during a RECALL operation, limiting the current through the volatile charge storage circuit 102/202. The nvRAM 600 further includes a first VCC transistor 610 through which the positive voltage supply line (VCCT) in the non-volatile charge storage circuit *** can be coupled to VPWR, and a second VCC transistor 612 through which VCCT can be coupled to ground.

FIG. 7 is a flow chart illustrating an embodiment of a method for the RECALL operation according to the present disclosure. Referring to FIGS. 5 through 7 the RECALL operation has three phases beginning with writing zeros into the volatile charge storage circuit 102/202 of one or more nvRAM cells 100/200 in an array or selected row in the array (702). Assuming at power up the data stored in the data true node (dt) of the volatile charge storage circuit 102/202 is a logical ‘1’ and the data complement node (dc) is a logical ‘0’, this can be accomplished by setting a control signal VSSIGATE coupled to a gate node of the VSS transistor 504/604 to turn ON the VSS transistor, grounding the negative voltage supply line (VSSI) and limiting the current through the volatile charge storage circuit 102/202. The clamping circuit 502/702 between VCCI and VSSI is turned on, VCCT is coupled to ground, and the normal program transistor 108/208 and the Bulk program transistor 112/212 turned ON so that the data stored in the volatile charge storage circuit 102/202 flips. That is the voltage at data complement node (dc) of the volatile charge storage circuit 102/202 goes to VCCI or a logical ‘1’, while the data true node (dt) goes to VCCI—a threshold voltage (Vtn) of the ______ transistor or a logical ‘0’.

Next, data recalled from the non-volatile charge storage circuit 104/204 of the nvRAM cell in a RECALL phase (704). This can be accomplished by setting control signal VSE to a voltage between an erased threshold voltage (Vte) and a programmed threshold voltage (Vtp) of the NVM device 106/206, such as about 0V. The recall transistor 110/210 and Bulk program transistor 112/212 of the non-volatile charge storage circuit 104/204 are turned ON and the normal program transistor 108/208 is turned OFF. VCCT is coupled to or maintained at ground potential. When the NVM device 106/206 is erased the data complement node (dc) in the volatile charge storage circuit 102/202 goes to ground (VGND) or a logical ‘1’, while the data true node (dt) goes to VCCI or a logical ‘0’.

Finally, the volatile charge storage circuit 102/202 of the nvRAM cell 100/200 is recharged in a recharge phase (706). Referring to FIGS. 5 and 6, this can be accomplished by turning OFF the clamping circuit 502/702 to unclamp VCCI and VSSI, and resetting control signal VSSIGATE coupled to the gate node of the VSS transistor 504/604 to turn OFF the VSS transistor applying VSSI to the nvRAM cell 100/200 The volatile charge storage circuit 102/202 latches the non-inverted data from the data true node (dt1) in the non-volatile charge storage circuit 104/204 and the RECALL operation is complete.

FIG. 8 is a block diagram of a semiconductor memory 800 including an array 802 of nvRAM cells 804 arranged in a number of rows 806 each sharing a common wordline (WL) and a number of columns 808 each sharing a common bitline or bitline true (BT) and a bitline complement (BC). Referring to FIG. 8, the semiconductor memory 800 further includes a micro-controller 810 to issue commands or control signals to each of the nvRAM cells 804 to execute STORE and RECALL operations as described above, and other peripheral circuits for reading from or writing to the memory array. The peripheral circuits include a row decoder 812 to convert and apply a memory address to the wordlines of nvRAM cells 804 of the array 802. When a data word is read from the semiconductor memory 800, nvRAM cells 804 coupled to a selected wordline (WL) are read out to bitlines (BT) and bitline complements (BC), and a state of those lines is detected by a sense amplifier/driver 814. The sense amplifier/driver 814 outputs data to a column decoder 816 which outputs the data word. When a data word is stored in the semiconductor memory 800, the column decoder 816 receives an input data word and applies it to the sense amplifier/driver 814 which drives the bitlines (BT) and bitline complements (BC) to store the data in the nvRAM cells 804 coupled to a selected wordline.

Thus, embodiments of semiconductor memories including and a non-volatile charge storage circuit including or consisting of a solitary NVM device and methods of operating the same have been described. Although the present disclosure has been described with reference to specific exemplary embodiments, it will be evident that various modifications and changes may be made to these embodiments without departing from the broader spirit and scope of the disclosure. Accordingly, the specification and drawings are to be regarded as an illustrative rather than a restrictive sense.

The Abstract of the Disclosure is provided to comply with 37 C.F.R. §1.72(b), requiring an abstract that will allow the reader to quickly ascertain the nature of one or more embodiments of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. In addition, in the foregoing Detailed Description, it can be seen that various features are grouped together in a single embodiment for the purpose of streamlining the disclosure. This method of disclosure is not to be interpreted as reflecting an intention that the claimed embodiments require more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive subject matter lies in less than all features of a single disclosed embodiment. Thus, the following claims are hereby incorporated into the Detailed Description, with each claim standing on its own as a separate embodiment.

Reference in the description to one embodiment or an embodiment means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the circuit or method. The appearances of the phrase one embodiment in various places in the specification do not necessarily all refer to the same embodiment.

Claims

1-20. (canceled)

21. A memory comprising: an array of non-volatile Static Random Access Memory (nvSRAM) cells, each nvSRAM cell comprising: a volatile charge storage circuit; anda non-volatile charge storage circuit comprising a non-volatile memory (NVM) element, a first transistor coupled to the NVM element through which data is coupled to the volatile charge storage circuit, a second transistor coupled to the NVM element through which a complement of the data is coupled to the volatile charge storage circuit and a third transistor through which the NVM element is coupled to a first positive voltage supply line (VCCT); anda processing element configured to issue control signals to each of the nvSRAM cells to execute a STORE operation and a RECALL operation.

22. The memory of claim 21, wherein the non-volatile charge storage circuit in each nvSRAM comprises exactly one NVM element.

23. The memory of claim 22, wherein the control signals comprise signals for normal programming in which the first transistor is ON and the second and third transistors are OFF, and a plurality of pulses are applied to a gate node of the NVM element.

24. The memory of claim 23, wherein the processing element is further configured to issue control signals for the STORE operation comprising signals for bulk programming to set the NVM element to a programmed state, and signals for bulk erasing to set the NVM element to an erased state, prior to issuing signals for normal programming.

25. The memory of claim 21, wherein the processing element is further configured to issue control signals for the RECALL operation so that data recalled out of the non-volatile charge storage circuit into the volatile charge storage circuit is non-inverted.

26. The memory of claim 25, further comprising a fourth transistor coupled between a negative voltage supply line (VSSI) in the volatile charge storage circuit and a negative voltage supply (VSS), and wherein the processing element is configured to issue control signals including a signal to the fourth transistor to electrically disconnect the VSSI from the VSS during the RECALL operation.

27. The memory of claim 26, further comprising a clamping circuit, and wherein the processing element is further configured to issue control signals including a signal to the clamping circuit to electrically couple a second positive voltage supply line (VCCI) in the volatile charge storage circuit to the VSSI during the RECALL operation.

28. The memory of claim 27, further comprising a fifth transistor coupled between VCCT in the non-volatile charge storage circuit and ground (VGND), and wherein the processing element is further configured to issue control signals including a signal to the fifth transistor to electrically couple VCCT to VGND during the RECALL operation.

29. A method comprising: turning ON a first transistor in a non-volatile charge storage circuit coupled between a non-volatile memory (NVM) element in the non-volatile charge storage circuit and a data node (dt) in a volatile charge storage circuit;turning OFF second and third transistors in the non-volatile charge storage circuit, the second transistor coupled between the NVM element and a data complement node (dc) in the volatile charge storage circuit and the third transistor coupled between the NVM element and a positive voltage supply line (VCCT); andapplying a plurality program pulses to a gate node of the NVM element to STORE data from the volatile charge storage circuit to the non-volatile charge storage circuit.

30. The method of claim 29, further comprising initial steps of bulk programming to set the NVM element to a programmed state, and bulk erasing to set the NVM element to an erased state.

31. The method of claim 29, wherein the plurality of pulses issued by the processing element each have a peak voltage of approximately 10V.

32. The method of claim 29, wherein each pulse has a pulse width substantially equal to a time between pulses.

33. The method of claim 29, wherein the NVM element comprises exactly one silicon-oxide-nitride-oxide-silicon (SONOS) transistor or exactly one polysilicon floating gate transistor.

34. A memory comprising: an array of non-volatile Static Random Access Memory (nvSRAM) cells, each nvSRAM cell comprising: a volatile charge storage circuit; anda non-volatile charge storage circuit comprising exactly one non-volatile memory (NVM) element, a first transistor through which a data true node (dt) in the volatile charge storage circuit is coupled to a first node of the NVM element, a second transistor through which a data complement node (dc) in the volatile charge storage circuit is coupled to the first node of the NVM element, and a third transistor through which a second node of the NVM element is coupled to a first positive voltage supply line (VCCT); anda processing element configured to issue control signals to each of the nvSRAM cells to execute a STORE operation and a RECALL operation.

35. The memory of claim 34, wherein the control signals comprise signals for normal programming in which the first transistor is ON and the second and third transistors are OFF, and a plurality of pulses are applied to a gate node of the NVM element.

36. The memory of claim 34, wherein the processing element is further configured to issue control signals for the STORE operation comprising signals for bulk programming to set the NVM element to a programmed state, and signals for bulk erasing to set the NVM element to an erased state, prior to issuing signals for normal programming.

37. The memory of claim 34, wherein the processing element is configured to issue control signals for a RECALL operation so that data recalled out of the non-volatile charge storage circuit into the volatile charge storage circuit is non-inverted.

38. The memory of claim 37, further comprising a fourth transistor coupled between a negative voltage supply line (VSSI) in the volatile charge storage circuit and a negative voltage supply (VSS), and wherein the processing element is configured to issue control signals including a signal to the fourth transistor to electrically disconnect the VSSI from the VSS during the RECALL operation.

39. The memory of claim 38, further comprising a clamping circuit, and wherein the processing element is further configured to issue control signals including a signal to the clamping circuit to electrically couple a second positive voltage supply line (VCCI) in the volatile charge storage circuit to the VSSI during the RECALL operation.

40. The memory of claim 39, further comprising a fifth transistor coupled between VCCT in the non-volatile charge storage circuit and ground (VGND), and wherein the processing element is further configured to issue control signals including a signal to the fifth transistor to electrically couple VCCT to VGND during the RECALL operation.