3365627

Information

• Patent Grant
• 3365627

• References
• Source

• Patent Number

  3,365,627

• Date Filed

  Not available

• Date Issued

  Tuesday, January 23, 1968
  58 years ago

• CPC

  • H03K3/313 - by the use, as active elements, of semiconductor devices with two electrodes, one or two potential-jump barriers, and exhibiting a negative resistance characteristic
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H03D3/26 - by means of sloping amplitude/frequency characteristic of tuned or reactive circuit
  • H03D7/04 - having a partially negative resistance characteristic
  • Y10S257/914 - Polysilicon containing oxygen, nitrogen, or carbon

• US Classifications

  • 327 - Miscellaneous active electrical nonlinear devices, circuits, and systems
  • 257 - Active solid-state devices
  • 455 - Telecommunications