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H01L29/00
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H01L29/02Semiconductor bodies; Multistep manufacturing processes therefor
H01L29/04characterised by their crystalline structure
H01L29/045by their particular orientation of crystalline planes
H01L29/06characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions
H01L29/0603characterised by particular constructional design considerations
H01L29/0607for preventing surface leakage or controlling electric field concentration
H01L29/0611for increasing or controlling the breakdown voltage of reverse biased devices
H01L29/0615by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions
H01L29/0619with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region
H01L29/0623Buried supplementary region
H01L29/0626with a localised breakdown region
H01L29/063Reduced surface field [RESURF] pn-junction structures
H01L29/0634Multiple reduced surface field (multi-RESURF) structures
H01L29/0638for preventing surface leakage due to surface inversion layer
H01L29/0642Isolation within the component
H01L29/0646PN junctions
H01L29/0649Dielectric regions
H01L29/0653adjoining the input or output region of a field-effect device
H01L29/0657characterised by the shape of the body
H01L29/0661specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction
H01L29/0665the shape of the body defining a nanostructure
H01L29/0669Nanowires or nanotubes
H01L29/0673oriented parallel to a substrate
H01L29/0676oriented perpendicular or at an angle to a substrate
H01L29/068comprising a junction
H01L29/0684characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
H01L29/0688characterised by the particular shape of a junction between semiconductor regions
H01L29/0692Surface layout
H01L29/0696of cellular field-effect devices
H01L29/08with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L29/0804Emitter regions of bipolar transistors
H01L29/0808of lateral transistors
H01L29/0813Non-interconnected multi-emitter structures
H01L29/0817of heterojunction bipolar transistors
H01L29/0821Collector regions of bipolar transistors
H01L29/0826Pedestal collectors
H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
H01L29/0834Anode regions of thyristors or gated bipolar-mode devices
H01L29/0839Cathode regions of thyristors
H01L29/0843Source or drain regions of field-effect devices
H01L29/0847of field-effect transistors with insulated gate
H01L29/0852of DMOS transistors
H01L29/0856Source regions
H01L29/086Impurity concentration or distribution
H01L29/0865Disposition
H01L29/0869Shape
H01L29/0873Drain regions
H01L29/0878Impurity concentration or distribution
H01L29/0882Disposition
H01L29/0886Shape
H01L29/0891of field-effect transistors with Schottky gate
H01L29/0895Tunnel injectors
H01L29/10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L29/1004Base region of bipolar transistors
H01L29/1008of lateral transistors
H01L29/1012Base regions of thyristors
H01L29/1016Anode base regions of thyristors
H01L29/102Cathode base regions of thyristors
H01L29/1025Channel region of field-effect devices
H01L29/1029of field-effect transistors
H01L29/1033with insulated gate
H01L29/1037and non-planar channel
H01L29/1041with a non-uniform doping structure in the channel region surface
H01L29/1045the doping structure being parallel to the channel length
H01L29/105with vertical doping variation
H01L29/1054with a variation of the composition
H01L29/1058with PN junction gate
H01L29/1062of charge coupled devices
H01L29/1066Gate region of field-effect devices with PN junction gate
H01L29/107Substrate region of field-effect devices
H01L29/1075of field-effect transistors
H01L29/1079with insulated gate
H01L29/1083with an inactive supplementary region
H01L29/1087characterised by the contact structure of the substrate region
H01L29/1091of charge coupled devices
H01L29/1095Body region
H01L29/12characterised by the materials of which they are formed
H01L29/122Single quantum well structures
H01L29/125Quantum wire structures
H01L29/127Quantum box structures
H01L29/15Structures with periodic or quasi periodic potential variation
H01L29/151Compositional structures
H01L29/152with quantum effects only in vertical direction
H01L29/154comprising at least one long range structurally disordered material
H01L29/155Comprising only semiconductor materials
H01L29/157Doping structures
H01L29/158Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction
H01L29/16including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System in uncombined form
H01L29/1602Diamond
H01L29/1604Amorphous materials
H01L29/1606Graphene
H01L29/1608Silicon carbide
H01L29/161including two or more of the elements provided for in group H01L29/16
H01L29/165in different semiconductor regions
H01L29/167further characterised by the doping material
H01L29/18Selenium or tellurium only, apart from doping materials or other impurities
H01L29/185Amorphous materials
H01L29/20including, apart from doping materials or other impurities, only AIIIBV compounds
H01L29/2003Nitride compounds
H01L29/2006Amorphous materials
H01L29/201including two or more compounds
H01L29/205in different semiconductor regions
H01L29/207further characterised by the doping material
H01L29/22including, apart from doping materials or other impurities, only AIIBVI compounds
H01L29/2203Cd X compounds being one element of the 6th group of the Periodic System
H01L29/2206Amorphous materials
H01L29/221including two or more compounds
H01L29/225in different semiconductor regions
H01L29/227further characterised by the doping material
H01L29/24including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
H01L29/242AIBVI or AIBVII compounds
H01L29/245Pb compounds
H01L29/247Amorphous materials
H01L29/26including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24
H01L29/263Amorphous materials
H01L29/267in different semiconductor regions
H01L29/30characterised by physical imperfections having polished or roughened surface
H01L29/32the imperfections being within the semiconductor body
H01L29/34the imperfections being on the surface
H01L29/36characterised by the concentration or distribution of impurities in the bulk material
H01L29/365Planar doping
H01L29/40Electrodes; Multistep manufacturing processes therefor
H01L29/401Multistep manufacturing processes
H01L29/402Field plates
H01L29/404Multiple field plate structures
H01L29/405Resistive arrangements
H01L29/407Recessed field plates
H01L29/408with an insulating layer with a particular dielectric or electrostatic property
H01L29/41characterised by their shape, relative sizes or dispositions
H01L29/413Nanosized electrodes
H01L29/417carrying the current to be rectified, amplified or switched
H01L29/41708Emitter or collector electrodes for bipolar transistors
H01L29/41716Cathode or anode electrodes for thyristors
H01L29/41725Source or drain electrodes for field effect devices
H01L29/41733for thin film transistors with insulated gate
H01L29/41741for vertical or pseudo-vertical devices
H01L29/4175for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness
H01L29/41758for lateral devices with structured layout for source or drain region
H01L29/41766with at least part of the source or drain electrode having contact below the semiconductor surface
H01L29/41775characterised by the proximity or the relative position of the source or drain electrode and the gate electrode
H01L29/41783Raised source or drain electrodes self aligned with the gate
H01L29/41791for transistors with a horizontal current flow in a vertical sidewall
H01L29/423not carrying the current to be rectified, amplified or switched
H01L29/42304Base electrodes for bipolar transistors
H01L29/42308Gate electrodes for thyristors
H01L29/42312Gate electrodes for field effect devices
H01L29/42316for field-effect transistors
H01L29/4232with insulated gate
H01L29/42324Gate electrodes for transistors with a floating gate
H01L29/42328with at least one additional gate other than the floating gate and the control gate
H01L29/42332with the floating gate formed by two or more non connected parts
H01L29/42336with one gate at least partly formed in a trench
H01L29/4234Gate electrodes for transistors with charge trapping gate insulator
H01L29/42344with at least one additional gate
H01L29/42348with trapping site formed by at least two separated sites
H01L29/42352with the gate at least partly formed in a trench
H01L29/42356Disposition
H01L29/4236within a trench
H01L29/42364characterised by the insulating layer
H01L29/42368the thickness being non-uniform
H01L29/42372characterised by the conducting layer
H01L29/42376characterised by the length or the sectional shape
H01L29/4238characterised by the surface lay-out
H01L29/42384for thin film field effect transistors
H01L29/42392fully surrounding the channel
H01L29/42396for charge coupled devices
H01L29/43characterised by the materials of which they are formed
H01L29/432Heterojunction gate for field effect devices
H01L29/435Resistive materials for field effect devices
H01L29/437Superconductor materials
H01L29/45Ohmic electrodes
H01L29/452on AIII-BV compounds
H01L29/454on thin film AIII-BV compounds
H01L29/456on silicon
H01L29/458for thin film silicon
H01L29/47Schottky barrier electrodes
H01L29/475on AIII-BV compounds
H01L29/49Metal-insulator-semiconductor electrodes
H01L29/4908for thin film semiconductor
H01L29/4916the conductor material next to the insulator being a silicon layer
H01L29/4925with a multiple layer structure
H01L29/4933with a silicide layer contacting the silicon layer
H01L29/4941with a barrier layer between the silicon and the metal or metal silicide upper layer
H01L29/495the conductor material next to the insulator being a simple metal
H01L29/4958with a multiple layer structure
H01L29/4966the conductor material next to the insulator being a composite material
H01L29/4975being a silicide layer
H01L29/4983with a lateral structure
H01L29/4991comprising an air gap
H01L29/51Insulating materials associated therewith
H01L29/511with a compositional variation
H01L29/512the variation being parallel to the channel plane
H01L29/513the variation being perpendicular to the channel plane
H01L29/515with cavities
H01L29/516with at least one ferroelectric layer
H01L29/517the insulating material comprising a metallic compound
H01L29/518the insulating material containing nitrogen
H01L29/66Types of semiconductor device; Multistep manufacturing processes therefor
H01L29/66007Multistep manufacturing processes
H01L29/66015of devices having a semiconductor body comprising semiconducting carbon
H01L29/66022the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
H01L29/6603Diodes
H01L29/66037the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/66045Field-effect transistors
H01L29/66053of devices having a semiconductor body comprising crystalline silicon carbide
H01L29/6606the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
H01L29/66068the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
H01L29/66083the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
H01L29/6609Diodes
H01L29/66098Breakdown diodes
H01L29/66106Zener diodes
H01L29/66113Avalanche diodes
H01L29/66121Multilayer diodes
H01L29/66128Planar diodes
H01L29/66136PN junction diodes
H01L29/66143Schottky diodes
H01L29/66151Tunnel diodes
H01L29/66159Transit time diodes
H01L29/66166Resistors with PN junction
H01L29/66174Capacitors with PN or Schottky junction
H01L29/66181Conductor-insulator-semiconductor capacitors
H01L29/66189with PN junction
H01L29/66196with an active layer made of a group 13/15 material
H01L29/66204Diodes
H01L29/66212Schottky diodes
H01L29/66219with a heterojunction
H01L29/66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/66234Bipolar junction transistors [BJT]
H01L29/66242Heterojunction transistors [HBT]
H01L29/6625Lateral transistors
H01L29/66257Schottky transistors
H01L29/66265Thin film bipolar transistors
H01L29/66272Silicon vertical transistors
H01L29/6628Inverse transistors
H01L29/66287with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate
H01L29/66295with main current going through the whole silicon substrate
H01L29/66303with multi-emitter
H01L29/6631with an active layer made of a group 13/15 material
H01L29/66318Heterojunction transistors
H01L29/66325controlled by field-effect
H01L29/66333Vertical insulated gate bipolar transistors
H01L29/6634with a recess formed by etching in the source/emitter contact region
H01L29/66348with a recessed gate
H01L29/66356Gated diodes
H01L29/66363Thyristors
H01L29/66371structurally associated with another device
H01L29/66378the other device being a controlling field-effect device
H01L29/66386Bidirectional thyristors
H01L29/66393Lateral or planar thyristors
H01L29/66401with an active layer made of a group 13/15 material
H01L29/66409Unipolar field-effect transistors
H01L29/66416Static induction transistors [SIT]
H01L29/66424Permeable base transistors [PBT]
H01L29/66431with a heterojunction interface channel or gate
H01L29/66439with a one- or zero-dimensional channel
H01L29/66446with an active layer made of a group 13/15 material
H01L29/66454Static induction transistors [SIT]
H01L29/66462with a heterojunction interface channel or gate
H01L29/66469with one- or zero-dimensional channel
H01L29/66477with an insulated gate
H01L29/66484with multiple gate, at least one gate being an insulated gate
H01L29/66492with a pocket or a lightly doped drain selectively formed at the side of the gate
H01L29/665using self aligned silicidation
H01L29/66507providing different silicide thicknesses on the gate and on source or drain
H01L29/66515using self aligned selective metal deposition simultaneously on the gate and on source or drain
H01L29/66522with an active layer made of a group 13/15 material
H01L29/6653using the removal of at least part of spacer
H01L29/66537using a self aligned punch through stopper or threshold implant under the gate region
H01L29/66545using a dummy
H01L29/66553using inside spacers, permanent or not
H01L29/6656using multiple spacer layers
H01L29/66568Lateral single gate silicon transistors
H01L29/66575where the source and drain or source and drain extensions are self-aligned to the sides of the gate
H01L29/66583with initial gate mask or masking layer complementary to the prospective gate location
H01L29/6659with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate
H01L29/66598forming drain [D] and lightly doped drain [LDD] simultaneously
H01L29/66606with final source and drain contacts formation strictly before final or dummy gate formation
H01L29/66613with a gate recessing step
H01L29/66621using etching to form a recess at the gate location
H01L29/66628recessing the gate by forming single crystalline semiconductor material at the source or drain location
H01L29/66636with source or drain recessed by etching or first recessed by etching and then refilled
H01L29/66643with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
H01L29/66651with a single crystalline channel formed on the silicon substrate after insulating device isolation
H01L29/66659with asymmetry in the channel direction
H01L29/66666Vertical transistors
H01L29/66674DMOS transistors
H01L29/66681Lateral DMOS transistors
H01L29/66689with a step of forming an insulating sidewall spacer
H01L29/66696with a step of recessing the source electrode
H01L29/66704with a step of recessing the gate electrode
H01L29/66712Vertical DMOS transistors
H01L29/66719With a step of forming an insulating sidewall spacer
H01L29/66727with a step of recessing the source electrode
H01L29/66734with a step of recessing the gate electrode
H01L29/66742Thin film unipolar transistors
H01L29/6675Amorphous silicon or polysilicon transistors
H01L29/66757Lateral single gate single channel transistors with non-inverted structure
H01L29/66765Lateral single gate single channel transistors with inverted structure
H01L29/66772Monocristalline silicon transistors on insulating substrates
H01L29/6678on sapphire substrates
H01L29/66787with a gate at the side of the channel
H01L29/66795with a horizontal current flow in a vertical sidewall of a semiconductor body
H01L29/66803with a step of doping the vertical sidewall
H01L29/6681using dummy structures having essentially the same shape as the semiconductor body
H01L29/66818the channel being thinned after patterning
H01L29/66825with a floating gate
H01L29/66833with a charge trapping gate insulator
H01L29/6684with a ferroelectric gate insulator
H01L29/66848with a Schottky gate
H01L29/66856with an active layer made of a group 13/15 material
H01L29/66863Lateral single gate transistors
H01L29/66871Processes wherein the final gate is made after the formation of the source and drain regions in the active layer
H01L29/66878Processes wherein the final gate is made before the formation
H01L29/66886Lateral transistors with two or more independent gates
H01L29/66893with a PN junction gate
H01L29/66901with a PN homojunction gate
H01L29/66909Vertical transistors
H01L29/66916with a PN heterojunction gate
H01L29/66924with an active layer made of a group 13/15 material
H01L29/66931BJT-like unipolar transistors
H01L29/66939with an active layer made of a group 13/15 material
H01L29/66946Charge transfer devices
H01L29/66954with an insulated gate
H01L29/66962with a Schottky gate
H01L29/66969of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
H01L29/66977Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects
H01L29/66984Devices using spin polarized carriers
H01L29/66992controllable only by the variation of applied heat
H01L29/68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/685Hi-Lo semiconductor devices
H01L29/70Bipolar devices
H01L29/705Double base diodes
H01L29/72Transistor-type devices
H01L29/73Bipolar junction transistors
H01L29/7302structurally associated with other devices
H01L29/7304the device being a resistive element
H01L29/7306Point contact transistors
H01L29/7308Schottky transistors
H01L29/7311Tunnel transistors
H01L29/7313Avalanche transistors
H01L29/7315Transistors with hook collector
H01L29/7317Bipolar thin film transistors
H01L29/732Vertical transistors
H01L29/7322having emitter-base and base-collector junctions leaving at the same surface of the body
H01L29/7325having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body
H01L29/7327Inverse vertical transistors
H01L29/735Lateral transistors
H01L29/737Hetero-junction transistors
H01L29/7371Vertical transistors
H01L29/7373having a two-dimensional base
H01L29/7375having an emitter comprising one or more non-monocrystalline elements of group IV
H01L29/7376Resonant tunnelling transistors
H01L29/7378comprising lattice mismatched active layers
H01L29/739controlled by field-effect
H01L29/7391Gated diode structures
H01L29/7392with PN junction gate
H01L29/7393Insulated gate bipolar mode transistors
H01L29/7394on an insulating layer or substrate
H01L29/7395Vertical transistors
H01L29/7396with a non planar surface
H01L29/7397and a gate structure lying on a slanted or vertical surface or formed in a groove
H01L29/7398with both emitter and collector contacts in the same substrate side
H01L29/74Thyristor-type devices
H01L29/7404structurally associated with at least one other device
H01L29/7408the device being a capacitor or a resistor
H01L29/7412the device being a diode
H01L29/7416the device being an antiparallel diode
H01L29/742the device being a field effect transistor
H01L29/7424having a built-in localised breakdown/breakover region
H01L29/7428having an amplifying gate structure
H01L29/7432Asymmetrical thyristors
H01L29/7436Lateral thyristors
H01L29/744Gate-turn-off devices
H01L29/745with turn-off by field effect
H01L29/7455produced by an insulated gate structure
H01L29/747Bidirectional devices
H01L29/749with turn-on by field effect
H01L29/76Unipolar devices
H01L29/7606Transistor-like structures
H01L29/7613Single electron transistors; Coulomb blockade devices
H01L29/762Charge transfer devices
H01L29/765Charge-coupled devices
H01L29/768with field effect produced by an insulated gate
H01L29/76808Input structures
H01L29/76816Output structures
H01L29/76825Structures for regeneration, refreshing, leakage compensation or the like
H01L29/76833Buried channel CCD
H01L29/76841Two-Phase CCD
H01L29/7685Three-Phase CCD
H01L29/76858Four-Phase CCD
H01L29/76866Surface Channel CCD
H01L29/76875Two-Phase CCD
H01L29/76883Three-Phase CCD
H01L29/76891Four-Phase CCD
H01L29/772Field effect transistors
H01L29/7722using static field induced regions
H01L29/7725with delta-doped channel
H01L29/7727Velocity modulation transistors
H01L29/775with one dimensional charge carrier gas channel
H01L29/778with two-dimensional charge carrier gas channel
H01L29/7781with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer
H01L29/7782with confinement of carriers by at least two heterojunctions
H01L29/7783using III-V semiconductor material
H01L29/7784with delta or planar doped donor layer
H01L29/7785with more than one donor layer
H01L29/7786with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer
H01L29/7787with wide bandgap charge-carrier supplying layer
H01L29/7788Vertical transistors
H01L29/7789the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
H01L29/78with field effect produced by an insulated gate
H01L29/7801DMOS transistors
H01L29/7802Vertical DMOS transistors
H01L29/7803structurally associated with at least one other device
H01L29/7804the other device being a pn-junction diode
H01L29/7805in antiparallel
H01L29/7806the other device being a Schottky barrier diode
H01L29/7808the other device being a breakdown diode
H01L29/7809having both source and drain contacts on the same surface
H01L29/781Inverted VDMOS transistors
H01L29/7811with an edge termination structure
H01L29/7812with a substrate comprising an insulating layer
H01L29/7813with trench gate electrode
H01L29/7815with voltage or current sensing structure
H01L29/7816Lateral DMOS transistors
H01L29/7817structurally associated with at least one other device
H01L29/7818the other device being a pn-junction diode
H01L29/7819in antiparallel
H01L29/782the other device being a Schottky barrier diode
H01L29/7821the other device being a breakdown diode
H01L29/7823with an edge termination structure
H01L29/7824with a substrate comprising an insulating layer
H01L29/7825with trench gate electrode
H01L29/7826with voltage or current sensing structure
H01L29/7827Vertical transistors
H01L29/7828without inversion channel
H01L29/783comprising a gate to body connection
H01L29/7831with multiple gate structure
H01L29/7832the structure comprising a MOS gate and at least one non-MOS gate
H01L29/7833with lightly doped drain or source extension
H01L29/7834with a non-planar structure
H01L29/7835with asymmetrical source and drain regions
H01L29/7836with a significant overlap between the lightly doped extension and the gate electrode
H01L29/7838without inversion channel
H01L29/7839with Schottky drain or source contact
H01L29/78391the gate comprising a layer which is used for its ferroelectric properties
H01L29/7841with floating body
H01L29/7842means for exerting mechanical stress on the crystal lattice of the channel region
H01L29/7843the means being an applied insulating layer
H01L29/7845the means being a conductive material
H01L29/7846the means being located in the lateral device isolation region
H01L29/7847using a memorization technique
H01L29/7848the means being located in the source/drain region
H01L29/7849the means being provided under the channel
H01L29/785having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body
H01L29/7851with the body tied to the substrate
H01L29/7853the body having a non-rectangular crossection
H01L29/7854with rounded corners
H01L29/7855with at least two independent gates
H01L29/7856with an non-uniform gate
H01L29/786Thin film transistors
H01L29/78603characterised by the insulating substrate or support
H01L29/78606with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
H01L29/78609for preventing leakage current
H01L29/78612for preventing the kink- or the snapback effect
H01L29/78615with a body contact
H01L29/78618characterised by the drain or the source properties
H01L29/78621with LDD structure or an extension or an offset region or characterised by the doping profile
H01L29/78624the source and the drain regions being asymmetrical
H01L29/78627with a significant overlap between the lightly doped drain and the gate electrode
H01L29/78633with a light shield
H01L29/78636with supplementary region or layer for improving the flatness of the device
H01L29/78639with a drain or source connected to a bulk conducting substrate
H01L29/78642Vertical transistors
H01L29/78645with multiple gate
H01L29/78648arranged on opposing sides of the channel
H01L29/78651Silicon transistors
H01L29/78654Monocrystalline silicon transistors
H01L29/78657SOS transistors
H01L29/7866Non-monocrystalline silicon transistors
H01L29/78663Amorphous silicon transistors
H01L29/78666with normal-type structure
H01L29/78669with inverted-type structure
H01L29/78672Polycrystalline or microcrystalline silicon transistor
H01L29/78675with normal-type structure
H01L29/78678with inverted-type structure
H01L29/78681having a semiconductor body comprising Alll-BV or All-BVI or AIV-BVI semiconductor materials, or Se or Te
H01L29/78684having a semiconductor body comprising semiconductor materials of the fourth group not being silicon, or alloys including an element of the group IV
H01L29/78687with a multilayer structure or superlattice structure
H01L29/7869having a semiconductor body comprising an oxide semiconductor material
H01L29/78693the semiconducting oxide being amorphous
H01L29/78696characterised by the structure of the channel
H01L29/788with floating gate
H01L29/7881Programmable transistors with only two possible levels of programmation
H01L29/7882charging by injection of carriers through a conductive insulator
H01L29/7883charging by tunnelling of carriers
H01L29/7884charging by hot carrier injection
H01L29/7885Hot carrier injection from the channel
H01L29/7886Hot carrier produced by avalanche breakdown of a PN junction
H01L29/7887Programmable transistors with more than two possible different levels of programmation
H01L29/7888Transistors programmable by two single electrons
H01L29/7889Vertical transistors
H01L29/792with charge trapping gate insulator
H01L29/7923Programmable transistors with more than two possible different levels of programmation
H01L29/7926Vertical transistors
H01L29/80with field effect produced by a PN or other rectifying junction gate
H01L29/802with heterojunction gate
H01L29/803Programmable transistors
H01L29/806with Schottky drain or source contact
H01L29/808with a PN junction gate
H01L29/8083Vertical transistors
H01L29/8086Thin film JFET's
H01L29/812with a Schottky gate
H01L29/8122Vertical transistors
H01L29/8124with multiple gate
H01L29/8126Thin film MESFET's
H01L29/8128with recessed gate
H01L29/82controllable by variation of the magnetic field applied to the device
H01L29/84controllable by variation of applied mechanical force
H01L29/86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
H01L29/8605Resistors with PN junctions
H01L29/861Diodes
H01L29/8611Planar PN junction diodes
H01L29/8613Mesa PN junction diodes
H01L29/8615Hi-lo semiconductor devices
H01L29/8616Charge trapping diodes
H01L29/8618Diodes with bulk potential barrier
H01L29/862Point contact diodes
H01L29/864Transit-time diodes
H01L29/866Zener diodes
H01L29/868PIN diodes
H01L29/87Thyristor diodes
H01L29/872Schottky diodes
H01L29/8725of the trench MOS barrier type [TMBS]
H01L29/88Tunnel-effect diodes
H01L29/882Resonant tunneling diodes
H01L29/885Esaki diodes
H01L29/92Capacitors with potential-jump barrier or surface barrier
H01L29/93Variable capacitance diodes
H01L29/94Metal-insulator-semiconductors
H01L29/945Trench capacitors