Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

H01L29/02Semiconductor bodies; Multistep manufacturing processes therefor H01L29/04characterised by their crystalline structure H01L29/045by their particular orientation of crystalline planes H01L29/06characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions H01L29/0603characterised by particular constructional design considerations H01L29/0607for preventing surface leakage or controlling electric field concentration H01L29/0611for increasing or controlling the breakdown voltage of reverse biased devices H01L29/0615by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions H01L29/0619with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region H01L29/0623Buried supplementary region H01L29/0626with a localised breakdown region H01L29/063Reduced surface field [RESURF] pn-junction structures H01L29/0634Multiple reduced surface field (multi-RESURF) structures H01L29/0638for preventing surface leakage due to surface inversion layer H01L29/0642Isolation within the component H01L29/0646PN junctions H01L29/0649Dielectric regions H01L29/0653adjoining the input or output region of a field-effect device H01L29/0657characterised by the shape of the body H01L29/0661specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction H01L29/0665the shape of the body defining a nanostructure H01L29/0669Nanowires or nanotubes H01L29/0673oriented parallel to a substrate H01L29/0676oriented perpendicular or at an angle to a substrate H01L29/068comprising a junction H01L29/0684characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions H01L29/0688characterised by the particular shape of a junction between semiconductor regions H01L29/0692Surface layout H01L29/0696of cellular field-effect devices H01L29/08with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes H01L29/0804Emitter regions of bipolar transistors H01L29/0808of lateral transistors H01L29/0813Non-interconnected multi-emitter structures H01L29/0817of heterojunction bipolar transistors H01L29/0821Collector regions of bipolar transistors H01L29/0826Pedestal collectors H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices H01L29/0834Anode regions of thyristors or gated bipolar-mode devices H01L29/0839Cathode regions of thyristors H01L29/0843Source or drain regions of field-effect devices H01L29/0847of field-effect transistors with insulated gate H01L29/0852of DMOS transistors H01L29/0856Source regions H01L29/086Impurity concentration or distribution H01L29/0865Disposition H01L29/0869Shape H01L29/0873Drain regions H01L29/0878Impurity concentration or distribution H01L29/0882Disposition H01L29/0886Shape H01L29/0891of field-effect transistors with Schottky gate H01L29/0895Tunnel injectors H01L29/10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes H01L29/1004Base region of bipolar transistors H01L29/1008of lateral transistors H01L29/1012Base regions of thyristors H01L29/1016Anode base regions of thyristors H01L29/102Cathode base regions of thyristors H01L29/1025Channel region of field-effect devices H01L29/1029of field-effect transistors H01L29/1033with insulated gate H01L29/1037and non-planar channel H01L29/1041with a non-uniform doping structure in the channel region surface H01L29/1045the doping structure being parallel to the channel length H01L29/105with vertical doping variation H01L29/1054with a variation of the composition H01L29/1058with PN junction gate H01L29/1062of charge coupled devices H01L29/1066Gate region of field-effect devices with PN junction gate H01L29/107Substrate region of field-effect devices H01L29/1075of field-effect transistors H01L29/1079with insulated gate H01L29/1083with an inactive supplementary region H01L29/1087characterised by the contact structure of the substrate region H01L29/1091of charge coupled devices H01L29/1095Body region H01L29/12characterised by the materials of which they are formed H01L29/122Single quantum well structures H01L29/125Quantum wire structures H01L29/127Quantum box structures H01L29/15Structures with periodic or quasi periodic potential variation H01L29/151Compositional structures H01L29/152with quantum effects only in vertical direction H01L29/154comprising at least one long range structurally disordered material H01L29/155Comprising only semiconductor materials H01L29/157Doping structures H01L29/158Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction H01L29/16including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System in uncombined form H01L29/1602Diamond H01L29/1604Amorphous materials H01L29/1606Graphene H01L29/1608Silicon carbide H01L29/161including two or more of the elements provided for in group H01L29/16 H01L29/165in different semiconductor regions H01L29/167further characterised by the doping material H01L29/18Selenium or tellurium only, apart from doping materials or other impurities H01L29/185Amorphous materials H01L29/20including, apart from doping materials or other impurities, only AIIIBV compounds H01L29/2003Nitride compounds H01L29/2006Amorphous materials H01L29/201including two or more compounds H01L29/205in different semiconductor regions H01L29/207further characterised by the doping material H01L29/22including, apart from doping materials or other impurities, only AIIBVI compounds H01L29/2203Cd X compounds being one element of the 6th group of the Periodic System H01L29/2206Amorphous materials H01L29/221including two or more compounds H01L29/225in different semiconductor regions H01L29/227further characterised by the doping material H01L29/24including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 H01L29/242AIBVI or AIBVII compounds H01L29/245Pb compounds H01L29/247Amorphous materials H01L29/26including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 H01L29/263Amorphous materials H01L29/267in different semiconductor regions H01L29/30characterised by physical imperfections having polished or roughened surface H01L29/32the imperfections being within the semiconductor body H01L29/34the imperfections being on the surface H01L29/36characterised by the concentration or distribution of impurities in the bulk material H01L29/365Planar doping H01L29/40Electrodes; Multistep manufacturing processes therefor H01L29/401Multistep manufacturing processes H01L29/402Field plates H01L29/404Multiple field plate structures H01L29/405Resistive arrangements H01L29/407Recessed field plates H01L29/408with an insulating layer with a particular dielectric or electrostatic property H01L29/41characterised by their shape, relative sizes or dispositions H01L29/413Nanosized electrodes H01L29/417carrying the current to be rectified, amplified or switched H01L29/41708Emitter or collector electrodes for bipolar transistors H01L29/41716Cathode or anode electrodes for thyristors H01L29/41725Source or drain electrodes for field effect devices H01L29/41733for thin film transistors with insulated gate H01L29/41741for vertical or pseudo-vertical devices H01L29/4175for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness H01L29/41758for lateral devices with structured layout for source or drain region H01L29/41766with at least part of the source or drain electrode having contact below the semiconductor surface H01L29/41775characterised by the proximity or the relative position of the source or drain electrode and the gate electrode H01L29/41783Raised source or drain electrodes self aligned with the gate H01L29/41791for transistors with a horizontal current flow in a vertical sidewall H01L29/423not carrying the current to be rectified, amplified or switched H01L29/42304Base electrodes for bipolar transistors H01L29/42308Gate electrodes for thyristors H01L29/42312Gate electrodes for field effect devices H01L29/42316for field-effect transistors H01L29/4232with insulated gate H01L29/42324Gate electrodes for transistors with a floating gate H01L29/42328with at least one additional gate other than the floating gate and the control gate H01L29/42332with the floating gate formed by two or more non connected parts H01L29/42336with one gate at least partly formed in a trench H01L29/4234Gate electrodes for transistors with charge trapping gate insulator H01L29/42344with at least one additional gate H01L29/42348with trapping site formed by at least two separated sites H01L29/42352with the gate at least partly formed in a trench H01L29/42356Disposition H01L29/4236within a trench H01L29/42364characterised by the insulating layer H01L29/42368the thickness being non-uniform H01L29/42372characterised by the conducting layer H01L29/42376characterised by the length or the sectional shape H01L29/4238characterised by the surface lay-out H01L29/42384for thin film field effect transistors H01L29/42392fully surrounding the channel H01L29/42396for charge coupled devices H01L29/43characterised by the materials of which they are formed H01L29/432Heterojunction gate for field effect devices H01L29/435Resistive materials for field effect devices H01L29/437Superconductor materials H01L29/45Ohmic electrodes H01L29/452on AIII-BV compounds H01L29/454on thin film AIII-BV compounds H01L29/456on silicon H01L29/458for thin film silicon H01L29/47Schottky barrier electrodes H01L29/475on AIII-BV compounds H01L29/49Metal-insulator-semiconductor electrodes H01L29/4908for thin film semiconductor H01L29/4916the conductor material next to the insulator being a silicon layer H01L29/4925with a multiple layer structure H01L29/4933with a silicide layer contacting the silicon layer H01L29/4941with a barrier layer between the silicon and the metal or metal silicide upper layer H01L29/495the conductor material next to the insulator being a simple metal H01L29/4958with a multiple layer structure H01L29/4966the conductor material next to the insulator being a composite material H01L29/4975being a silicide layer H01L29/4983with a lateral structure H01L29/4991comprising an air gap H01L29/51Insulating materials associated therewith H01L29/511with a compositional variation H01L29/512the variation being parallel to the channel plane H01L29/513the variation being perpendicular to the channel plane H01L29/515with cavities H01L29/516with at least one ferroelectric layer H01L29/517the insulating material comprising a metallic compound H01L29/518the insulating material containing nitrogen H01L29/66Types of semiconductor device; Multistep manufacturing processes therefor H01L29/66007Multistep manufacturing processes H01L29/66015of devices having a semiconductor body comprising semiconducting carbon H01L29/66022the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched H01L29/6603Diodes H01L29/66037the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched H01L29/66045Field-effect transistors H01L29/66053of devices having a semiconductor body comprising crystalline silicon carbide H01L29/6606the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched H01L29/66068the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched H01L29/66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials H01L29/66083the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched H01L29/6609Diodes H01L29/66098Breakdown diodes H01L29/66106Zener diodes H01L29/66113Avalanche diodes H01L29/66121Multilayer diodes H01L29/66128Planar diodes H01L29/66136PN junction diodes H01L29/66143Schottky diodes H01L29/66151Tunnel diodes H01L29/66159Transit time diodes H01L29/66166Resistors with PN junction H01L29/66174Capacitors with PN or Schottky junction H01L29/66181Conductor-insulator-semiconductor capacitors H01L29/66189with PN junction H01L29/66196with an active layer made of a group 13/15 material H01L29/66204Diodes H01L29/66212Schottky diodes H01L29/66219with a heterojunction H01L29/66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched H01L29/66234Bipolar junction transistors [BJT] H01L29/66242Heterojunction transistors [HBT] H01L29/6625Lateral transistors H01L29/66257Schottky transistors H01L29/66265Thin film bipolar transistors H01L29/66272Silicon vertical transistors H01L29/6628Inverse transistors H01L29/66287with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate H01L29/66295with main current going through the whole silicon substrate H01L29/66303with multi-emitter H01L29/6631with an active layer made of a group 13/15 material H01L29/66318Heterojunction transistors H01L29/66325controlled by field-effect H01L29/66333Vertical insulated gate bipolar transistors H01L29/6634with a recess formed by etching in the source/emitter contact region H01L29/66348with a recessed gate H01L29/66356Gated diodes H01L29/66363Thyristors H01L29/66371structurally associated with another device H01L29/66378the other device being a controlling field-effect device H01L29/66386Bidirectional thyristors H01L29/66393Lateral or planar thyristors H01L29/66401with an active layer made of a group 13/15 material H01L29/66409Unipolar field-effect transistors H01L29/66416Static induction transistors [SIT] H01L29/66424Permeable base transistors [PBT] H01L29/66431with a heterojunction interface channel or gate H01L29/66439with a one- or zero-dimensional channel H01L29/66446with an active layer made of a group 13/15 material H01L29/66454Static induction transistors [SIT] H01L29/66462with a heterojunction interface channel or gate H01L29/66469with one- or zero-dimensional channel H01L29/66477with an insulated gate H01L29/66484with multiple gate, at least one gate being an insulated gate H01L29/66492with a pocket or a lightly doped drain selectively formed at the side of the gate H01L29/665using self aligned silicidation H01L29/66507providing different silicide thicknesses on the gate and on source or drain H01L29/66515using self aligned selective metal deposition simultaneously on the gate and on source or drain H01L29/66522with an active layer made of a group 13/15 material H01L29/6653using the removal of at least part of spacer H01L29/66537using a self aligned punch through stopper or threshold implant under the gate region H01L29/66545using a dummy H01L29/66553using inside spacers, permanent or not H01L29/6656using multiple spacer layers H01L29/66568Lateral single gate silicon transistors H01L29/66575where the source and drain or source and drain extensions are self-aligned to the sides of the gate H01L29/66583with initial gate mask or masking layer complementary to the prospective gate location H01L29/6659with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate H01L29/66598forming drain [D] and lightly doped drain [LDD] simultaneously H01L29/66606with final source and drain contacts formation strictly before final or dummy gate formation H01L29/66613with a gate recessing step H01L29/66621using etching to form a recess at the gate location H01L29/66628recessing the gate by forming single crystalline semiconductor material at the source or drain location H01L29/66636with source or drain recessed by etching or first recessed by etching and then refilled H01L29/66643with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure H01L29/66651with a single crystalline channel formed on the silicon substrate after insulating device isolation H01L29/66659with asymmetry in the channel direction H01L29/66666Vertical transistors H01L29/66674DMOS transistors H01L29/66681Lateral DMOS transistors H01L29/66689with a step of forming an insulating sidewall spacer H01L29/66696with a step of recessing the source electrode H01L29/66704with a step of recessing the gate electrode H01L29/66712Vertical DMOS transistors H01L29/66719With a step of forming an insulating sidewall spacer H01L29/66727with a step of recessing the source electrode H01L29/66734with a step of recessing the gate electrode H01L29/66742Thin film unipolar transistors H01L29/6675Amorphous silicon or polysilicon transistors H01L29/66757Lateral single gate single channel transistors with non-inverted structure H01L29/66765Lateral single gate single channel transistors with inverted structure H01L29/66772Monocristalline silicon transistors on insulating substrates H01L29/6678on sapphire substrates H01L29/66787with a gate at the side of the channel H01L29/66795with a horizontal current flow in a vertical sidewall of a semiconductor body H01L29/66803with a step of doping the vertical sidewall H01L29/6681using dummy structures having essentially the same shape as the semiconductor body H01L29/66818the channel being thinned after patterning H01L29/66825with a floating gate H01L29/66833with a charge trapping gate insulator H01L29/6684with a ferroelectric gate insulator H01L29/66848with a Schottky gate H01L29/66856with an active layer made of a group 13/15 material H01L29/66863Lateral single gate transistors H01L29/66871Processes wherein the final gate is made after the formation of the source and drain regions in the active layer H01L29/66878Processes wherein the final gate is made before the formation H01L29/66886Lateral transistors with two or more independent gates H01L29/66893with a PN junction gate H01L29/66901with a PN homojunction gate H01L29/66909Vertical transistors H01L29/66916with a PN heterojunction gate H01L29/66924with an active layer made of a group 13/15 material H01L29/66931BJT-like unipolar transistors H01L29/66939with an active layer made of a group 13/15 material H01L29/66946Charge transfer devices H01L29/66954with an insulated gate H01L29/66962with a Schottky gate H01L29/66969of devices having semiconductor bodies not comprising group 14 or group 13/15 materials H01L29/66977Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects H01L29/66984Devices using spin polarized carriers H01L29/66992controllable only by the variation of applied heat H01L29/68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched H01L29/685Hi-Lo semiconductor devices H01L29/70Bipolar devices H01L29/705Double base diodes H01L29/72Transistor-type devices H01L29/73Bipolar junction transistors H01L29/7302structurally associated with other devices H01L29/7304the device being a resistive element H01L29/7306Point contact transistors H01L29/7308Schottky transistors H01L29/7311Tunnel transistors H01L29/7313Avalanche transistors H01L29/7315Transistors with hook collector H01L29/7317Bipolar thin film transistors H01L29/732Vertical transistors H01L29/7322having emitter-base and base-collector junctions leaving at the same surface of the body H01L29/7325having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body H01L29/7327Inverse vertical transistors H01L29/735Lateral transistors H01L29/737Hetero-junction transistors H01L29/7371Vertical transistors H01L29/7373having a two-dimensional base H01L29/7375having an emitter comprising one or more non-monocrystalline elements of group IV H01L29/7376Resonant tunnelling transistors H01L29/7378comprising lattice mismatched active layers H01L29/739controlled by field-effect H01L29/7391Gated diode structures H01L29/7392with PN junction gate H01L29/7393Insulated gate bipolar mode transistors H01L29/7394on an insulating layer or substrate H01L29/7395Vertical transistors H01L29/7396with a non planar surface H01L29/7397and a gate structure lying on a slanted or vertical surface or formed in a groove H01L29/7398with both emitter and collector contacts in the same substrate side H01L29/74Thyristor-type devices H01L29/7404structurally associated with at least one other device H01L29/7408the device being a capacitor or a resistor H01L29/7412the device being a diode H01L29/7416the device being an antiparallel diode H01L29/742the device being a field effect transistor H01L29/7424having a built-in localised breakdown/breakover region H01L29/7428having an amplifying gate structure H01L29/7432Asymmetrical thyristors H01L29/7436Lateral thyristors H01L29/744Gate-turn-off devices H01L29/745with turn-off by field effect H01L29/7455produced by an insulated gate structure H01L29/747Bidirectional devices H01L29/749with turn-on by field effect H01L29/76Unipolar devices H01L29/7606Transistor-like structures H01L29/7613Single electron transistors; Coulomb blockade devices H01L29/762Charge transfer devices H01L29/765Charge-coupled devices H01L29/768with field effect produced by an insulated gate H01L29/76808Input structures H01L29/76816Output structures H01L29/76825Structures for regeneration, refreshing, leakage compensation or the like H01L29/76833Buried channel CCD H01L29/76841Two-Phase CCD H01L29/7685Three-Phase CCD H01L29/76858Four-Phase CCD H01L29/76866Surface Channel CCD H01L29/76875Two-Phase CCD H01L29/76883Three-Phase CCD H01L29/76891Four-Phase CCD H01L29/772Field effect transistors H01L29/7722using static field induced regions H01L29/7725with delta-doped channel H01L29/7727Velocity modulation transistors H01L29/775with one dimensional charge carrier gas channel H01L29/778with two-dimensional charge carrier gas channel H01L29/7781with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer H01L29/7782with confinement of carriers by at least two heterojunctions H01L29/7783using III-V semiconductor material H01L29/7784with delta or planar doped donor layer H01L29/7785with more than one donor layer H01L29/7786with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer H01L29/7787with wide bandgap charge-carrier supplying layer H01L29/7788Vertical transistors H01L29/7789the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body H01L29/78with field effect produced by an insulated gate H01L29/7801DMOS transistors H01L29/7802Vertical DMOS transistors H01L29/7803structurally associated with at least one other device H01L29/7804the other device being a pn-junction diode H01L29/7805in antiparallel H01L29/7806the other device being a Schottky barrier diode H01L29/7808the other device being a breakdown diode H01L29/7809having both source and drain contacts on the same surface H01L29/781Inverted VDMOS transistors H01L29/7811with an edge termination structure H01L29/7812with a substrate comprising an insulating layer H01L29/7813with trench gate electrode H01L29/7815with voltage or current sensing structure H01L29/7816Lateral DMOS transistors H01L29/7817structurally associated with at least one other device H01L29/7818the other device being a pn-junction diode H01L29/7819in antiparallel H01L29/782the other device being a Schottky barrier diode H01L29/7821the other device being a breakdown diode H01L29/7823with an edge termination structure H01L29/7824with a substrate comprising an insulating layer H01L29/7825with trench gate electrode H01L29/7826with voltage or current sensing structure H01L29/7827Vertical transistors H01L29/7828without inversion channel H01L29/783comprising a gate to body connection H01L29/7831with multiple gate structure H01L29/7832the structure comprising a MOS gate and at least one non-MOS gate H01L29/7833with lightly doped drain or source extension H01L29/7834with a non-planar structure H01L29/7835with asymmetrical source and drain regions H01L29/7836with a significant overlap between the lightly doped extension and the gate electrode H01L29/7838without inversion channel H01L29/7839with Schottky drain or source contact H01L29/78391the gate comprising a layer which is used for its ferroelectric properties H01L29/7841with floating body H01L29/7842means for exerting mechanical stress on the crystal lattice of the channel region H01L29/7843the means being an applied insulating layer H01L29/7845the means being a conductive material H01L29/7846the means being located in the lateral device isolation region H01L29/7847using a memorization technique H01L29/7848the means being located in the source/drain region H01L29/7849the means being provided under the channel H01L29/785having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body H01L29/7851with the body tied to the substrate H01L29/7853the body having a non-rectangular crossection H01L29/7854with rounded corners H01L29/7855with at least two independent gates H01L29/7856with an non-uniform gate H01L29/786Thin film transistors H01L29/78603characterised by the insulating substrate or support H01L29/78606with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78609for preventing leakage current H01L29/78612for preventing the kink- or the snapback effect H01L29/78615with a body contact H01L29/78618characterised by the drain or the source properties H01L29/78621with LDD structure or an extension or an offset region or characterised by the doping profile H01L29/78624the source and the drain regions being asymmetrical H01L29/78627with a significant overlap between the lightly doped drain and the gate electrode H01L29/78633with a light shield H01L29/78636with supplementary region or layer for improving the flatness of the device H01L29/78639with a drain or source connected to a bulk conducting substrate H01L29/78642Vertical transistors H01L29/78645with multiple gate H01L29/78648arranged on opposing sides of the channel H01L29/78651Silicon transistors H01L29/78654Monocrystalline silicon transistors H01L29/78657SOS transistors H01L29/7866Non-monocrystalline silicon transistors H01L29/78663Amorphous silicon transistors H01L29/78666with normal-type structure H01L29/78669with inverted-type structure H01L29/78672Polycrystalline or microcrystalline silicon transistor H01L29/78675with normal-type structure H01L29/78678with inverted-type structure H01L29/78681having a semiconductor body comprising Alll-BV or All-BVI or AIV-BVI semiconductor materials, or Se or Te H01L29/78684having a semiconductor body comprising semiconductor materials of the fourth group not being silicon, or alloys including an element of the group IV H01L29/78687with a multilayer structure or superlattice structure H01L29/7869having a semiconductor body comprising an oxide semiconductor material H01L29/78693the semiconducting oxide being amorphous H01L29/78696characterised by the structure of the channel H01L29/788with floating gate H01L29/7881Programmable transistors with only two possible levels of programmation H01L29/7882charging by injection of carriers through a conductive insulator H01L29/7883charging by tunnelling of carriers H01L29/7884charging by hot carrier injection H01L29/7885Hot carrier injection from the channel H01L29/7886Hot carrier produced by avalanche breakdown of a PN junction H01L29/7887Programmable transistors with more than two possible different levels of programmation H01L29/7888Transistors programmable by two single electrons H01L29/7889Vertical transistors H01L29/792with charge trapping gate insulator H01L29/7923Programmable transistors with more than two possible different levels of programmation H01L29/7926Vertical transistors H01L29/80with field effect produced by a PN or other rectifying junction gate H01L29/802with heterojunction gate H01L29/803Programmable transistors H01L29/806with Schottky drain or source contact H01L29/808with a PN junction gate H01L29/8083Vertical transistors H01L29/8086Thin film JFET's H01L29/812with a Schottky gate H01L29/8122Vertical transistors H01L29/8124with multiple gate H01L29/8126Thin film MESFET's H01L29/8128with recessed gate H01L29/82controllable by variation of the magnetic field applied to the device H01L29/84controllable by variation of applied mechanical force H01L29/86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched H01L29/8605Resistors with PN junctions H01L29/861Diodes H01L29/8611Planar PN junction diodes H01L29/8613Mesa PN junction diodes H01L29/8615Hi-lo semiconductor devices H01L29/8616Charge trapping diodes H01L29/8618Diodes with bulk potential barrier H01L29/862Point contact diodes H01L29/864Transit-time diodes H01L29/866Zener diodes H01L29/868PIN diodes H01L29/87Thyristor diodes H01L29/872Schottky diodes H01L29/8725of the trench MOS barrier type [TMBS] H01L29/88Tunnel-effect diodes H01L29/882Resonant tunneling diodes H01L29/885Esaki diodes H01L29/92Capacitors with potential-jump barrier or surface barrier H01L29/93Variable capacitance diodes H01L29/94Metal-insulator-semiconductors H01L29/945Trench capacitors