3388013

Information

• Patent Grant
• 3388013

• References
• Source

• Patent Number

  3,388,013

• Date Filed

  Not available

• Date Issued

  Tuesday, June 11, 1968
  56 years ago

• CPC

  • H01L29/04 - characterised by their crystalline structure
  • H01L21/223 - using diffusion into or out of a solid from or into a gaseous phase
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • Y10S117/902 - Specified orientation, shape, crystallography, or size of seed or substrate
  • Y10S438/921 - Nonselective diffusion

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 257 - Active solid-state devices