3391017

Information

• Patent Grant
• 3391017

• References
• Source

• Patent Number

  3,391,017

• Date Filed

  Not available

• Date Issued

  Tuesday, July 2, 1968
  56 years ago

• CPC

  • C01B25/06 - Hydrogen phosphides
  • C01B25/088 - containing plural metal
  • C22C1/007 - Preparing arsenides or antimonides, especially of the III-VI-compound type
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • Y10S148/072 - Heterojunctions
  • Y10S148/115 - Orientation
  • Y10S438/971 - Stoichiometric control of host substrate composition

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 423 - Chemistry of inorganic compounds
  • 438 - Semiconductor device manufacturing: process