Stoichiometric control of host substrate composition

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CPC
Y10S438/971

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

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Y10S438/971Stoichiometric control of host substrate composition

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Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing MTJ cell of magnetic random access memory
- Patent number 6,849,466
- Issue date Feb 1, 2005
- Hynix Semiconductor Inc.
- Seaung Suk Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming silicon containing thin films by atomic layer dep...
- Patent number 6,528,430
- Issue date Mar 4, 2003
- Samsung Electronics Co., Ltd.
- Kim Yeong Kwan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Use of Si-rich oxide film as a chemical potential barrier for contr...
- Patent number 6,274,429
- Issue date Aug 14, 2001
- Texas Instruments Incorporated
- Sudhanshu Misra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for in situ growth of p-type doped group II-VI semiconductor...
- Patent number 6,043,141
- Issue date Mar 28, 2000
- Hughes Electronics Corporation
- Owen K. Wu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the heat treatment of II-VI semiconductors
- Patent number 5,933,751
- Issue date Aug 3, 1999
- Sumitomo Electric Industries Ltd.
- Ryu Hirota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rapid process for producing a chalcopyrite semiconductor on a subst...
- Patent number 5,578,503
- Issue date Nov 26, 1996
- Siemens Aktiengesellschaft
- Franz Karg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing leakage current in an integrated circuit
- Patent number 5,416,030
- Issue date May 16, 1995
- Texas Instruments Incorporated
- Jerome L. Elkind
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V based integrated circuits having low temperature growth buffe...
- Patent number 5,411,914
- Issue date May 2, 1995
- Massachusetts Institute of Technology
- Chang-Lee Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing a HgCdTe epitaxial layer on a semiconductor subs...
- Patent number 5,399,503
- Issue date Mar 21, 1995
- Fujitsu Limited
- Tetsuo Saito
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making a through hole in multi-layer insulating films
- Patent number 5,378,652
- Issue date Jan 3, 1995
- Kabushiki Kaisha Toshiba
- Shuichi Samata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for via formation and type conversion in group II and group...
- Patent number 5,318,666
- Issue date Jun 7, 1994
- Texas Instruments Incorporated
- Jerome L. Elkind
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing an infrared detector
- Patent number 5,198,370
- Issue date Mar 30, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Yuji Ohkura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-high-speed photoconductive devices using semi-insulating layers
- Patent number 5,168,069
- Issue date Dec 1, 1992
- Massachusetts Institute of Technology
- Frank W. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing GaAs single crystal substrate using three stage...
- Patent number 5,137,847
- Issue date Aug 11, 1992
- Nippon Mining Co., Ltd.
- Haruhito Shimakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction between metal and zincblende-type III-V compound semicondu...
- Patent number 5,098,858
- Issue date Mar 24, 1992
- NEC Corporation
- Kazuyoshi Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealing method
- Patent number 5,028,296
- Issue date Jul 2, 1991
- Texas Instruments Incorporated
- John H. Tregilgas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing p-type group II-VI material
- Patent number 5,028,561
- Issue date Jul 2, 1991
- Hughes Aircraft Company
- G. Sanjiv Kamath
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making buffer layers for III-V devices using solid phase...
- Patent number 4,952,527
- Issue date Aug 28, 1990
- Massachusetts Institute of Technology
- Arthur R. Calawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of performing solution growth of ZnSe crystals
- Patent number 4,917,757
- Issue date Apr 17, 1990
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Intermetallic compound semiconductor thin film and method of manufa...
- Patent number 4,874,438
- Issue date Oct 17, 1989
- Toyo Communication Equipment Co., Ltd.
- Masahide Oshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HcCdTe epitaxially grown on crystalline support
- Patent number 4,846,926
- Issue date Jul 11, 1989
- Ford Aerospace and Communications Corporation
- Robert E. Kay
- C30 - CRYSTAL GROWTH
Information Patent Grant
Znse green light emitting diode
- Patent number 4,755,856
- Issue date Jul 5, 1988
- Jun-Ichi Nishizawa
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ZnSe green light emitting diode
- Patent number 4,725,563
- Issue date Feb 16, 1988
- Zaidan Hojim Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing titanium nitride MOS device gate electrode
- Patent number 4,570,328
- Issue date Feb 18, 1986
- Motorola, Inc.
- J. B. Price
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-temperature Hg anneal for HgCdTe
- Patent number 4,481,044
- Issue date Nov 6, 1984
- Texas Instruments Incorporated
- Herbert F. Schaake
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Manufacturing method of silicide gates and interconnects for integr...
- Patent number 4,443,930
- Issue date Apr 24, 1984
- NCR Corporation
- Thomas J. Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a detector device
- Patent number 4,411,732
- Issue date Oct 25, 1983
- U.S. Philips Corporation
- John T. M. Wotherspoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing pn junction in group II-VI compound semicon...
- Patent number 4,389,256
- Issue date Jun 21, 1983
- Nishizawa; Jun-ichi
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing semiconductor structures by epitaxial growt...
- Patent number 4,366,009
- Issue date Dec 28, 1982
- U.S. Philips Corporation
- Philippe Jarry
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semi-open liquid phase epitaxial growth system
- Patent number 4,315,477
- Issue date Feb 16, 1982
- Rockwell International Corporation
- Cheng-Chi Wang
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Method for manufacturing MTJ cell of magnetic random access memory
- Publication number 20040014246
- Publication date Jan 22, 2004
- Seaung Suk Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SILICON CONTAINING THIN FILMS BY ATOMIC LAYER DEP...
- Publication number 20020164890
- Publication date Nov 7, 2002
- Kim Yeong Kwan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Stoichiometric control of host substrate composition

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for manufacturing MTJ cell of magnetic random access memory

Method of forming silicon containing thin films by atomic layer dep...

Use of Si-rich oxide film as a chemical potential barrier for contr...

Method for in situ growth of p-type doped group II-VI semiconductor...

Method for the heat treatment of II-VI semiconductors

Rapid process for producing a chalcopyrite semiconductor on a subst...

Method of reducing leakage current in an integrated circuit

III-V based integrated circuits having low temperature growth buffe...

Method for growing a HgCdTe epitaxial layer on a semiconductor subs...

Method of making a through hole in multi-layer insulating films

Method for via formation and type conversion in group II and group...

Method for producing an infrared detector

Ultra-high-speed photoconductive devices using semi-insulating layers

Method of producing GaAs single crystal substrate using three stage...

Junction between metal and zincblende-type III-V compound semicondu...

Annealing method

Method of growing p-type group II-VI material

Method of making buffer layers for III-V devices using solid phase...

Method of performing solution growth of ZnSe crystals

Intermetallic compound semiconductor thin film and method of manufa...

HcCdTe epitaxially grown on crystalline support

Znse green light emitting diode

ZnSe green light emitting diode

Method of producing titanium nitride MOS device gate electrode

High-temperature Hg anneal for HgCdTe

Manufacturing method of silicide gates and interconnects for integr...

Method of manufacturing a detector device

Method of manufacturing pn junction in group II-VI compound semicon...

Method of manufacturing semiconductor structures by epitaxial growt...

Semi-open liquid phase epitaxial growth system

Patents Applicationslast 30 patents

Method for manufacturing MTJ cell of magnetic random access memory

METHOD OF FORMING SILICON CONTAINING THIN FILMS BY ATOMIC LAYER DEP...