3444412

Information

• Patent Grant
• 3444412

• References
• Source

• Patent Number

  3,444,412

• Date Filed

  Not available

• Date Issued

  Tuesday, May 13, 1969
  55 years ago

• CPC

  • C23C14/24 - Vacuum evaporation
  • C23C14/0021 - Reactive sputtering or evaporation
  • C23C14/08 - Oxides
  • C23C14/085 - of iron group metals
  • C23C14/58 - After-treatment
  • C23C14/5833 - Ion beam bombardment
  • C23C14/5853 - Oxidation
  • H01B1/08 - oxides
  • H01J29/45 - exhibiting internal electric effects caused by electromagnetic radiation
  • H01J29/456 - exhibiting no discontinuities
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/08 - Preparation of the foundation plate
  • H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof
  • H01L31/102 - characterised by only one potential barrier or surface barrier

• US Classifications

  • 313 - Electric lamp and discharge devices
  • 257 - Active solid-state devices
  • 338 - Electrical resistors
  • 427 - Coating processes