3462321

Information

• Patent Grant
• 3462321

• References
• Source

• Patent Number

  3,462,321

• Date Filed

  Not available

• Date Issued

  Tuesday, August 19, 1969
  55 years ago

• CPC

  • H01L33/0054 - for devices with an active region comprising only group IV elements
  • C30B11/06 - at least one but not all components of the crystal composition being added
  • C30B13/08 - adding crystallising material or reactants forming it in situ to the molten zone
  • C30B19/04 - the solvent being a component of the crystal composition
  • C30B29/36 - Carbides
  • Y10S148/107 - Melt
  • Y10S148/148 - Silicon carbide

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 423 - Chemistry of inorganic compounds