Carbides

Industry

CPC
C30B29/36

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Current Industry

C30B29/36Carbides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide powder and method for manufacturing silicon carbide...
- Patent number 12,359,344
- Issue date Jul 15, 2025
- Senic Inc.
- Jong Hwi Park
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,362,173
- Issue date Jul 15, 2025
- Soitec
- Hugo Biard
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer
- Patent number 12,356,687
- Issue date Jul 8, 2025
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for evaluating crystal defects in silicon carbide single cry...
- Patent number 12,345,660
- Issue date Jul 1, 2025
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Shiga
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of preparing a silicon carbide crystal by deposition onto at...
- Patent number 12,338,544
- Issue date Jun 24, 2025
- OCI Company Ltd
- Gabok Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC volumetric shapes and methods of forming boules
- Patent number 12,330,948
- Issue date Jun 17, 2025
- Pallidus, Inc.
- Douglas M Dukes
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Mixed member of SiC and Si and production method
- Patent number 12,330,992
- Issue date Jun 17, 2025
- FUKAMI PATENT OFFICE, P.C.
- Mayumi Nakamoto
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Manufacturing device for SiC semiconductor substrate
- Patent number 12,325,930
- Issue date Jun 10, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal silicon carbide wafer, and single-crystal silicon ca...
- Patent number 12,325,934
- Issue date Jun 10, 2025
- Central Glass Company, Limited
- Tomonori Umezaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide powder, method for manufacturing silicon carbide in...
- Patent number 12,325,933
- Issue date Jun 10, 2025
- Senic Inc.
- Jong Hwi Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for CVD deposition of n-type doped silicon carbide and epita...
- Patent number 12,325,932
- Issue date Jun 10, 2025
- LPE S.P.A.
- Silvio Preti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal silicon carbide wafer, single-crystal silicon carbid...
- Patent number 12,325,935
- Issue date Jun 10, 2025
- Central Glass Company, Limited
- Tomonori Umezaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of using sic container
- Patent number 12,320,030
- Issue date Jun 3, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional, ordered, double transition metals carbides having...
- Patent number 12,322,800
- Issue date Jun 3, 2025
- Drexel University
- Michel W. Barsoum
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide wafer and method of preparing the same
- Patent number 12,320,033
- Issue date Jun 3, 2025
- SENIC INC.
- Jong Hwi Park
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating silicon carbide material by performing a firs...
- Patent number 12,319,581
- Issue date Jun 3, 2025
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide wafers and grinding method thereof
- Patent number 12,308,224
- Issue date May 20, 2025
- GlobalWafers Co., Ltd.
- Chin Chen Chiu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semi-insulating single-crystal silicon carbide bulk material and po...
- Patent number 12,297,561
- Issue date May 13, 2025
- TAISIC MATERIALS CORP.
- Dai-Liang Ma
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide ingot including screw dislocations
- Patent number 12,297,562
- Issue date May 13, 2025
- 1)MIRISE Technologies Corporation
- Isaho Kamata
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
High purity SiOC and SiC, methods compositions and applications
- Patent number 12,291,456
- Issue date May 6, 2025
- Pallidus, Inc.
- Douglas M. Dukes
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for manufacturing silicon carbide single cryst...
- Patent number 12,281,410
- Issue date Apr 22, 2025
- Central Research Institute Of Electric Power Industry
- Norihiro Hoshino
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Device for producing silicon carbide single crystals
- Patent number 12,281,407
- Issue date Apr 22, 2025
- Ebner Industrieofenbau GmbH
- Robert Ebner
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide ingot and method of fabricating the same
- Patent number 12,276,043
- Issue date Apr 15, 2025
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide wafer and semiconductor device
- Patent number 12,270,122
- Issue date Apr 8, 2025
- SENIC INC.
- Jung Woo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer, and method of manufacturing the same
- Patent number 12,266,693
- Issue date Apr 1, 2025
- Resonac Corporation
- Yoshitaka Nishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC substrate and SiC ingot
- Patent number 12,252,810
- Issue date Mar 18, 2025
- Resonac Corporation
- Masato Ito
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal wafer, and methods for manufacturing...
- Patent number 12,252,808
- Issue date Mar 18, 2025
- Denso Corporation
- Isaho Kamata
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC substrate and SiC epitaxial wafer
- Patent number 12,252,809
- Issue date Mar 18, 2025
- Resonac Corporation
- Yoshitaka Nishihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal and method for suppressing...
- Patent number 12,247,318
- Issue date Mar 11, 2025
- Shin-Etsu Chemical Co., Ltd.
- Norio Yamagata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC seed crystal for growth of a SiC ingot b...
- Patent number 12,247,319
- Issue date Mar 11, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
- Publication number 20250236989
- Publication date Jul 24, 2025
- Kabushiki Kaisha Toshiba
- Tsutomu KIYOSAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE WAFER AND METHOD OF FORMING THE SAME
- Publication number 20250223724
- Publication date Jul 10, 2025
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEED, SILICON CARBIDE CRYSTAL AND METHOD OF FABRICA...
- Publication number 20250223723
- Publication date Jul 10, 2025
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL PREPARATION DEVICES AND CRYSTAL PREPARATION METHODS
- Publication number 20250223719
- Publication date Jul 10, 2025
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE CRYSTAL BOULE AND MANUFACTURING METHOD THEREOF
- Publication number 20250223722
- Publication date Jul 10, 2025
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Carbide Epitaxial Wafer and Preparation Method Therefor
- Publication number 20250223725
- Publication date Jul 10, 2025
- BYD COMPANY LIMITED
- Yuze Guo
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE
- Publication number 20250215612
- Publication date Jul 3, 2025
- Resonac Corporation
- Yukio NAGAHATA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYST...
- Publication number 20250215613
- Publication date Jul 3, 2025
- Central Research Institute of Electric Power Industry
- Norihiro HOSHINO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE
- Publication number 20250215610
- Publication date Jul 3, 2025
- Resonac Corporation
- Koji Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20250218771
- Publication date Jul 3, 2025
- Sumitomo Electric Industries, Ltd.
- Hideyuki HISANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE
- Publication number 20250215611
- Publication date Jul 3, 2025
- Resonac Corporation
- Shunsuke NOGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, AND...
- Publication number 20250203985
- Publication date Jun 19, 2025
- Sumitomo Electric Industries, Ltd.
- Takahiro SHIIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRUCIBLE FOR PRODUCING A SIC VOLUME MONO CRYSTAL AND A METHOD FOR G...
- Publication number 20250198046
- Publication date Jun 19, 2025
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH METHODS AND DEVICES
- Publication number 20250198047
- Publication date Jun 19, 2025
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
ARRANGEMENT FOR GROWING A SIC VOLUME MONOCRYSTAL AND GROWING METHOD
- Publication number 20250198048
- Publication date Jun 19, 2025
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING SIC
- Publication number 20250187929
- Publication date Jun 12, 2025
- INDUSTRIEKERAMIK HOCHRHEIN GMBH
- Marco REINGER
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE PLATFORMS AND THE MANUFACTURE THEREOF THROUGH SILIC...
- Publication number 20250179685
- Publication date Jun 5, 2025
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP.
- Sagi Varghese Mathai
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SUBSTRATE AND SiC EPITAXIAL WAFER
- Publication number 20250179688
- Publication date Jun 5, 2025
- Resonac Corporation
- Yoshitaka NISHIHARA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
POLYCRYSTALLINE SIC FORMED BODY AND METHOD FOR PRODUCING THE SAME
- Publication number 20250171927
- Publication date May 29, 2025
- Tokai Carbon Co., Ltd.
- Takaomi SUGIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING HETEROEPITAXIAL FILM
- Publication number 20250163609
- Publication date May 22, 2025
- Shin-Etsu Handotai Co., Ltd.
- Tsuyoshi OHTSUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE
- Publication number 20250154682
- Publication date May 15, 2025
- Siltronic AG
- Brian MURPHY
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC WAFER AND SiC EPITAXIAL WAFER
- Publication number 20250154684
- Publication date May 15, 2025
- Resonac Corporation
- Shunsuke NOGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE...
- Publication number 20250146171
- Publication date May 8, 2025
- Sumitomo Electric Industries, Ltd.
- Shunsaku UETA
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL WAFER
- Publication number 20250146174
- Publication date May 8, 2025
- Resonac Corporation
- Yoshikazu UMETA
- C30 - CRYSTAL GROWTH
Information Patent Application
FAST COOLING OF REACTOR FROM HIGH TEMPERATURES
- Publication number 20250146172
- Publication date May 8, 2025
- LPE S.p.A.
- Maurilio Giuseppe Meschia
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL WAFER
- Publication number 20250146178
- Publication date May 8, 2025
- Resonac Corporation
- Yoshikazu UMETA
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL WAFER
- Publication number 20250146175
- Publication date May 8, 2025
- Resonac Corporation
- Yoshikazu UMETA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20250146177
- Publication date May 8, 2025
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250140602
- Publication date May 1, 2025
- SOITEC
- Gweltaz Gaudin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH METHOD AND GROWTH DEVICE FOR SILICON CARBIDE CRYSTAL
- Publication number 20250137166
- Publication date May 1, 2025
- CEC Compound Semiconductor Co., Ltd
- Weiming XUE
- C30 - CRYSTAL GROWTH

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon carbide powder and method for manufacturing silicon carbide...

Method for manufacturing a composite structure comprising a thin la...

SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer

Method for evaluating crystal defects in silicon carbide single cry...

Method of preparing a silicon carbide crystal by deposition onto at...

SiC volumetric shapes and methods of forming boules

Mixed member of SiC and Si and production method

Manufacturing device for SiC semiconductor substrate

Single-crystal silicon carbide wafer, and single-crystal silicon ca...

Silicon carbide powder, method for manufacturing silicon carbide in...

Method for CVD deposition of n-type doped silicon carbide and epita...

Single-crystal silicon carbide wafer, single-crystal silicon carbid...

Method of using sic container

Two-dimensional, ordered, double transition metals carbides having...

Silicon carbide wafer and method of preparing the same

Method of fabricating silicon carbide material by performing a firs...

Silicon carbide wafers and grinding method thereof

Semi-insulating single-crystal silicon carbide bulk material and po...

Silicon carbide ingot including screw dislocations

High purity SiOC and SiC, methods compositions and applications

Method and apparatus for manufacturing silicon carbide single cryst...

Device for producing silicon carbide single crystals

Silicon carbide ingot and method of fabricating the same

Silicon carbide wafer and semiconductor device

SiC epitaxial wafer, and method of manufacturing the same

SiC substrate and SiC ingot

Silicon carbide single crystal wafer, and methods for manufacturing...

SiC substrate and SiC epitaxial wafer

Method for producing SiC single crystal and method for suppressing...

Method for producing a SiC seed crystal for growth of a SiC ingot b...

Patents Applicationslast 30 patents

SILICON CARBIDE EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME

SILICON CARBIDE WAFER AND METHOD OF FORMING THE SAME

SILICON CARBIDE SEED, SILICON CARBIDE CRYSTAL AND METHOD OF FABRICA...

CRYSTAL PREPARATION DEVICES AND CRYSTAL PREPARATION METHODS

SILICON CARBIDE CRYSTAL BOULE AND MANUFACTURING METHOD THEREOF

Silicon Carbide Epitaxial Wafer and Preparation Method Therefor

SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE

METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYST...

SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, AND...

CRUCIBLE FOR PRODUCING A SIC VOLUME MONO CRYSTAL AND A METHOD FOR G...

CRYSTAL GROWTH METHODS AND DEVICES

ARRANGEMENT FOR GROWING A SIC VOLUME MONOCRYSTAL AND GROWING METHOD

METHOD AND APPARATUS FOR PRODUCING SIC

SILICON CARBIDE PLATFORMS AND THE MANUFACTURE THEREOF THROUGH SILIC...

SiC SUBSTRATE AND SiC EPITAXIAL WAFER

POLYCRYSTALLINE SIC FORMED BODY AND METHOD FOR PRODUCING THE SAME

METHOD FOR PRODUCING HETEROEPITAXIAL FILM

HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE

SiC WAFER AND SiC EPITAXIAL WAFER

SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE...

SiC EPITAXIAL WAFER

FAST COOLING OF REACTOR FROM HIGH TEMPERATURES

SiC EPITAXIAL WAFER

SiC EPITAXIAL WAFER

SILICON CARBIDE EPITAXIAL SUBSTRATE

COMPOSITE STRUCTURE AND MANUFACTURING METHOD THEREOF

GROWTH METHOD AND GROWTH DEVICE FOR SILICON CARBIDE CRYSTAL