Carbides

Industry

CPC
C30B29/36

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Current Industry

C30B29/36Carbides

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide single crystal and silicon carbide substrate
- Patent number 12,227,876
- Issue date Feb 18, 2025
- Sumitomo Electric Industries, Ltd.
- Shunsaku Ueta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of evaluating SiC substrate, method of manufacturing SiC epi...
- Patent number 12,228,523
- Issue date Feb 18, 2025
- Resonac Corporation
- Ling Guo
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC wafer and SiC epitaxial wafer
- Patent number 12,227,875
- Issue date Feb 18, 2025
- Resonac Corporation
- Shunsuke Noguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC epitaxial wafer
- Patent number 12,215,439
- Issue date Feb 4, 2025
- Resonac Corporation
- Hiromasa Suo
- C30 - CRYSTAL GROWTH
Information Patent Grant
PVT-method and device for producing single crystals in a safe manne...
- Patent number 12,209,327
- Issue date Jan 28, 2025
- PVA TePla AG
- Michael Schöler
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing semiconductor substrate and epitaxial growt...
- Patent number 12,209,328
- Issue date Jan 28, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing same
- Patent number 12,205,989
- Issue date Jan 21, 2025
- PROTERIAL, LTD.
- Tsuyoshi Miura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a composite structure comprising a thin layer...
- Patent number 12,198,983
- Issue date Jan 14, 2025
- Soitec
- Ionut Radu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC crystals with an optimal orientation of lattice planes for fiss...
- Patent number 12,195,878
- Issue date Jan 14, 2025
- SICRYSTAL GMBH
- Michael Vogel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide wafer and method for manufacturing the same
- Patent number 12,188,151
- Issue date Jan 7, 2025
- Denso Corporation
- Hiroaki Fujibayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...
- Patent number 12,188,152
- Issue date Jan 7, 2025
- Resonac Corporation
- Kensho Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of forming silicon carbide coated base substrates at multip...
- Patent number 12,180,611
- Issue date Dec 31, 2024
- Applied Materials, Inc.
- Yen Lin Leow
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC composite substrate and composite substrate for semiconductor d...
- Patent number 12,183,792
- Issue date Dec 31, 2024
- NGK Insulators, Ltd.
- Kiyoshi Matsushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Quantitative textured polycrystalline coatings
- Patent number 12,163,248
- Issue date Dec 10, 2024
- Kennametal Inc.
- Zhenyu Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for simultaneously manufacturing more than one single crysta...
- Patent number 12,157,955
- Issue date Dec 3, 2024
- SICRYSTAL GMBH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,159,781
- Issue date Dec 3, 2024
- Soitec
- Hugo Biard
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing wafers with modification lines of defined orie...
- Patent number 12,159,805
- Issue date Dec 3, 2024
- Siltectra GmbH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Silicon carbide composite wafer and manufacturing method thereof
- Patent number 12,159,855
- Issue date Dec 3, 2024
- HONG CHUANG APPLIED TECHNOLOGY CO., LTD
- Yan-Kai Zeng
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC wafer and manufacturing method for SiC wafer
- Patent number 12,139,813
- Issue date Nov 12, 2024
- Toyota Tsusho Corporation
- Masatake Nagaya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Joined body, laser oscillator, laser amplifier, and joined body man...
- Patent number 12,142,888
- Issue date Nov 12, 2024
- National Institute for Materials Science
- Hiroaki Furuse
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal and semiconductor apparatus
- Patent number 12,129,571
- Issue date Oct 29, 2024
- Mitsubishi Electric Corporation
- Hiroyuki Kinoshita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and silicon carbide semiconduct...
- Patent number 12,125,881
- Issue date Oct 22, 2024
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method and wafer
- Patent number 12,123,105
- Issue date Oct 22, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large dimension silicon carbide single crystalline materials with r...
- Patent number 12,125,701
- Issue date Oct 22, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,116,696
- Issue date Oct 15, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki Takaoka
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Manufacturing method of semi-insulating single-crystal silicon carb...
- Patent number 12,098,477
- Issue date Sep 24, 2024
- TAISIC MATERIALS CORP.
- Dai-Liang Ma
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Thermal conductivity estimation method, thermal conductivity estima...
- Patent number 12,099,026
- Issue date Sep 24, 2024
- Sumco Corporation
- Ryusuke Yokoyama
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for producing a SiC substrate via an etching step, growth st...
- Patent number 12,098,476
- Issue date Sep 24, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER
- Publication number 20250059679
- Publication date Feb 20, 2025
- Resonac Corporation
- Marusu KATADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PROCESSING CARBON-CONTAINED MONOCRYSTALLINE SUBSTRATE
- Publication number 20250059681
- Publication date Feb 20, 2025
- Disco Corporation
- Naoki MURAZAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTITATIVE TEXTURED POLYCRYSTALLINE COATINGS
- Publication number 20250051960
- Publication date Feb 13, 2025
- Kennametal Inc.
- Zhenyu Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTU...
- Publication number 20250051962
- Publication date Feb 13, 2025
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HEAT TREATMENT APPARATUS AND METHOD OF OPERATING THEREOF
- Publication number 20250046632
- Publication date Feb 6, 2025
- Rohm Co., Ltd.
- Makoto TAKAMURA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIAB...
- Publication number 20250043460
- Publication date Feb 6, 2025
- STMicroelectronics International N.V.
- Cateno Marco CAMALLERI
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC INGOT AND METHOD FOR MANUFACTURING SiC INGOT
- Publication number 20250034754
- Publication date Jan 30, 2025
- Resonac Corporation
- Hiromasa SUO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Silicon Carbide Crystal Growth Device and Quality Control Method
- Publication number 20250027227
- Publication date Jan 23, 2025
- Winsheng Material Technology Co., Ltd.
- Yun-Fu Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20250006796
- Publication date Jan 2, 2025
- Sumitomo Electric Industries, Ltd.
- Takahiro SHIIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...
- Publication number 20250006491
- Publication date Jan 2, 2025
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING HETEROEPITAXIAL WAFER
- Publication number 20240429046
- Publication date Dec 26, 2024
- Shin-Etsu Handotai Co., Ltd.
- Toshiki MATSUBARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...
- Publication number 20240413208
- Publication date Dec 12, 2024
- Rohm Co., Ltd.
- Takuji MAEKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH METHOD AND STRUCTURE OF LED EPITAXY
- Publication number 20240405159
- Publication date Dec 5, 2024
- Focus Lightings Tech (Suqian) Co., Ltd.
- Guochang LI
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20240401230
- Publication date Dec 5, 2024
- Rohm Co., Ltd.
- Keiju SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
8-INCH N-TYPE SiC SINGLE CRYSTAL SUBSTRATE
- Publication number 20240401234
- Publication date Dec 5, 2024
- Resonac Corporation
- Tomohiro SHONAI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME
- Publication number 20240401235
- Publication date Dec 5, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYS...
- Publication number 20240392476
- Publication date Nov 28, 2024
- SOITEC
- Ionut Radu
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing a Bulk SiC Single Crystal with Improved Qualit...
- Publication number 20240392471
- Publication date Nov 28, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
- Publication number 20240384432
- Publication date Nov 21, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
PVT-METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS IN A SAFE MANNE...
- Publication number 20240376633
- Publication date Nov 14, 2024
- PVA TePla AG
- Michael SCHÖLER
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SINGLE-CRYSTAL SILICON CARBIDE WAFER, SINGLE-CRYSTAL SILICON CARBID...
- Publication number 20240368806
- Publication date Nov 7, 2024
- Central Glass Company, Limited
- Tomonori UMEZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE MATERIAL
- Publication number 20240359991
- Publication date Oct 31, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Batch Mode Silicon Carbide Epitaxial Reactor
- Publication number 20240360589
- Publication date Oct 31, 2024
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...
- Publication number 20240352617
- Publication date Oct 24, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya ZWIEBACK
- C01 - INORGANIC CHEMISTRY
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL SILICON CARBIDE WAFER, AND SINGLE-CRYSTAL SILICON CA...
- Publication number 20240344237
- Publication date Oct 17, 2024
- Central Glass Company, Limited
- Tomonori UMEZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...
- Publication number 20240337044
- Publication date Oct 10, 2024
- DENSO CORPORATION
- NOBUYUKI OYA
- C30 - CRYSTAL GROWTH
Information Patent Application
SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDU...
- Publication number 20240328032
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW RESISTIVITY POLYCRYSTALLINE BASED SUBSTRATE OR WAFER
- Publication number 20240332365
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon carbide single crystal and silicon carbide substrate

Method of evaluating SiC substrate, method of manufacturing SiC epi...

SiC wafer and SiC epitaxial wafer

SiC epitaxial wafer

PVT-method and device for producing single crystals in a safe manne...

Method of manufacturing semiconductor substrate and epitaxial growt...

Silicon carbide epitaxial substrate and method for manufacturing same

Method for producing a composite structure comprising a thin layer...

SiC crystals with an optimal orientation of lattice planes for fiss...

Silicon carbide wafer and method for manufacturing the same

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...

Methods of forming silicon carbide coated base substrates at multip...

SiC composite substrate and composite substrate for semiconductor d...

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Quantitative textured polycrystalline coatings

Method for simultaneously manufacturing more than one single crysta...

Method for manufacturing a composite structure comprising a thin la...

Method for producing wafers with modification lines of defined orie...

Silicon carbide composite wafer and manufacturing method thereof

SiC wafer and manufacturing method for SiC wafer

Joined body, laser oscillator, laser amplifier, and joined body man...

Silicon carbide single crystal and semiconductor apparatus

Silicon carbide epitaxial substrate and silicon carbide semiconduct...

Crystal growth method and wafer

Large dimension silicon carbide single crystalline materials with r...

Silicon carbide substrate

Silicon carbide substrate

Manufacturing method of semi-insulating single-crystal silicon carb...

Thermal conductivity estimation method, thermal conductivity estima...

Method for producing a SiC substrate via an etching step, growth st...

Patents Applicationslast 30 patents

SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER

METHOD OF PROCESSING CARBON-CONTAINED MONOCRYSTALLINE SUBSTRATE

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

QUANTITATIVE TEXTURED POLYCRYSTALLINE COATINGS

METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTU...

HEAT TREATMENT APPARATUS AND METHOD OF OPERATING THEREOF

MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIAB...

SiC INGOT AND METHOD FOR MANUFACTURING SiC INGOT

Silicon Carbide Crystal Growth Device and Quality Control Method

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...

METHOD FOR PRODUCING HETEROEPITAXIAL WAFER

SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...

GROWTH METHOD AND STRUCTURE OF LED EPITAXY

COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF

8-INCH N-TYPE SiC SINGLE CRYSTAL SUBSTRATE

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYS...

Method for Producing a Bulk SiC Single Crystal with Improved Qualit...

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...

PVT-METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS IN A SAFE MANNE...

SINGLE-CRYSTAL SILICON CARBIDE WAFER, SINGLE-CRYSTAL SILICON CARBID...

SILICON CARBIDE MATERIAL

Batch Mode Silicon Carbide Epitaxial Reactor

VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...

LARGE DIAMETER SILICON CARBIDE WAFERS

SINGLE-CRYSTAL SILICON CARBIDE WAFER, AND SINGLE-CRYSTAL SILICON CA...

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...

SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDU...

LOW RESISTIVITY POLYCRYSTALLINE BASED SUBSTRATE OR WAFER