3493444

Information

• Patent Grant
• 3493444

• References
• Source

• Patent Number

  3,493,444

• Date Filed

  Not available

• Date Issued

  Tuesday, February 3, 1970
  55 years ago

• CPC

  • C30B25/02 - Epitaxial-layer growth
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • Y10S148/052 - Face to face deposition
  • Y10S148/148 - Silicon carbide

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment