Epitaxial-layer growth

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CPC
C30B25/02

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

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C30B25/02Epitaxial-layer growth

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Growth of A-B crystals without crystal lattice curvature
- Patent number 12,168,839
- Issue date Dec 17, 2024
- Freiberger Compound Materials GMBH
- Berndt Weinert
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
- Patent number 12,132,145
- Issue date Oct 29, 2024
- Nichia Corporation
- Tomoya Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integrated epitaxy and preclean system
- Patent number 12,125,698
- Issue date Oct 22, 2024
- Applied Materials, Inc.
- Lara Hawrylchak
- B08 - CLEANING
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal substrate and method for manufacturing the same
- Patent number 12,104,279
- Issue date Oct 1, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods for forming large area single crystal diamond substrates wi...
- Patent number 12,098,475
- Issue date Sep 24, 2024
- Board of Trustees of Michigan State University
- Timothy A. Grotjohn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for manufacturing silicon carbide single crystal ingot and...
- Patent number 12,071,709
- Issue date Aug 27, 2024
- Denso Corporation
- Isaho Kamata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III nitride substrate
- Patent number 12,049,710
- Issue date Jul 30, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 12,046,471
- Issue date Jul 23, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond crystal
- Patent number 12,024,792
- Issue date Jul 2, 2024
- Orbray Co., Ltd.
- Seongwoo Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-CO-doped semiconductor substrate
- Patent number 11,990,335
- Issue date May 21, 2024
- IVWorks Co., Ltd.
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing beta-Ga2O3-based single crystal film, and crysta...
- Patent number 11,982,016
- Issue date May 14, 2024
- Tamura Corporation
- Ken Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystalline oxide semiconductor film and semiconductor device
- Patent number 11,967,618
- Issue date Apr 23, 2024
- FLOSFIA INC.
- Isao Takahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group 13 element nitride wafer with reduced variation in off-cut angle
- Patent number 11,965,268
- Issue date Apr 23, 2024
- IV WORKS CO., LTD.
- Vianney Leroux
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide crystal
- Patent number 11,952,676
- Issue date Apr 9, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing single-crystal semiconductor layer, struct...
- Patent number 11,948,795
- Issue date Apr 2, 2024
- IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Myung Mo Sung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High thermal conductivity boron arsenide for thermal management, el...
- Patent number 11,948,858
- Issue date Apr 2, 2024
- The Regents of the University of California
- Yongjie Hu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large diameter silicon carbide single crystals and apparatus and me...
- Patent number 11,905,618
- Issue date Feb 20, 2024
- II-VI ADVANCED MATERIALS, LLC
- Xueping Xu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Group 13 element nitride wafer with reduced variation in off-cut angle
- Patent number 11,891,719
- Issue date Feb 6, 2024
- IV WORKS CO., LTD.
- Vianney Leroux
- C30 - CRYSTAL GROWTH
Information Patent Grant
Advanced cooling system using throttled internal cooling passage fl...
- Patent number 11,879,688
- Issue date Jan 23, 2024
- Mainstream Engineering Corporation
- Brian P Tucker
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Chemical-vapor-deposition silicon carbide bulk having improved etch...
- Patent number 11,859,309
- Issue date Jan 2, 2024
- DS TECHNO CO., LTD.
- Hak Jun Ahn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods and devices for graphene formation on flexible substrates b...
- Patent number 11,823,895
- Issue date Nov 21, 2023
- California Institute of Technology
- Chen-Hsuan Lu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing group III nitride crystal by reacting an ox...
- Patent number 11,795,573
- Issue date Oct 24, 2023
- Osaka University
- Yusuke Mori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a metastable crystalline structure which is a 2-...
- Patent number 11,756,788
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Philipp Staudinger
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING A DEVICE COMPRISING A DIAMOND CRYSTAL
- Publication number 20240384434
- Publication date Nov 21, 2024
- THALES
- Thierry DEBUISSCHERT
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING AN EPITAXIAL STACK AND SUBSTRATE PROCESSING APPAR...
- Publication number 20240379353
- Publication date Nov 14, 2024
- ASM IP HOLDING B.V.
- Wonjong Kim
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE SUBSTRATE
- Publication number 20240352623
- Publication date Oct 24, 2024
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III ELEMENT NITRIDE SUBSTRATE AND PRODUCTION METHOD FOR GROUP...
- Publication number 20240344238
- Publication date Oct 17, 2024
- NGK Insulators, Ltd.
- Katsuhiro IMAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING COATED SUBSTRATES, COATED SUBSTRATE, AND USE T...
- Publication number 20240327309
- Publication date Oct 3, 2024
- Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
- Kevin SCHUCK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
POPULATION OF ALLOY NANOCRYSTALS, POPULATION OF CORE-SHELL NANOCRYS...
- Publication number 20240309271
- Publication date Sep 19, 2024
- ZHEJIANG UNIVERSITY
- Xiaogang PENG
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCT...
- Publication number 20240297069
- Publication date Sep 5, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
OPTICAL DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240280752
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Hua Yu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING PHOTONIC CRYSTAL AND METHOD FOR MANUFACTUR...
- Publication number 20240283220
- Publication date Aug 22, 2024
- SEIKO EPSON CORPORATION
- Yoshitomo KUMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED QUANTUM...
- Publication number 20240247407
- Publication date Jul 25, 2024
- Applied Materials, Inc.
- Michael Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL NITRIDE FERROELECTRONICS
- Publication number 20240242963
- Publication date Jul 18, 2024
- The Regents of the University of Michigan
- Zetian Mi
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH THERMAL CONDUCTIVITY BORON ARSENIDE FOR THERMAL MANAGEMENT, EL...
- Publication number 20240243034
- Publication date Jul 18, 2024
- The Regents of the University of California
- Yongjie HU
- C30 - CRYSTAL GROWTH
Information Patent Application
Vapor Deposition Apparatus and Techniques Using High Purity Polymer...
- Publication number 20240190710
- Publication date Jun 13, 2024
- Pallidus, Inc.
- Mark S. Land
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...
- Publication number 20240150931
- Publication date May 9, 2024
- II-VI ADVANCED MATERIALS, LLC
- Xueping XU
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Photoelectrode and Method for Manufacturing Same
- Publication number 20240044022
- Publication date Feb 8, 2024
- Nippon Telegraph and Telephone Corporation
- Yuya Uzumaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING P-TYPE DOPED SILICON-GERMANIUM LAYERS AND SYSTEM...
- Publication number 20240006176
- Publication date Jan 4, 2024
- ASM IP HOLDING B.V.
- Lucas Petersen Barbosa Lima
- C30 - CRYSTAL GROWTH
Information Patent Application
MULTI-LAYER STACKS OF 2D MATERIALS AND/OR OTHER LAYERS AND RELATED...
- Publication number 20230392292
- Publication date Dec 7, 2023
- The University of Chicago
- Jiwoong Park
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT AND...
- Publication number 20230374699
- Publication date Nov 23, 2023
- DENSO CORPORATION
- Isaho KAMATA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE SUBSTRATE
- Publication number 20230323563
- Publication date Oct 12, 2023
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE WITH NITRIDED INTERFACE LAYER
- Publication number 20230274934
- Publication date Aug 31, 2023
- IVWorks Co., Ltd.
- Florian TENDILLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SILICON-PHOSPHOROUS MATERIALS
- Publication number 20230243068
- Publication date Aug 3, 2023
- Applied Materials, Inc.
- Errol Antonio C Sanchez
- C30 - CRYSTAL GROWTH
Information Patent Application
QUALITY EVALUATION METHOD, MANUFACTURING SYSTEM OF SILICON FOR EVAL...
- Publication number 20230236165
- Publication date Jul 27, 2023
- Shin-Etsu Chemical Co., Ltd.
- Naruhiro HOSHINO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVIC...
- Publication number 20230167582
- Publication date Jun 1, 2023
- Pallidus, Inc.
- Douglas Dukes
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR FORMING POLYCRYSTALLINE SILICON FILM
- Publication number 20230141501
- Publication date May 11, 2023
- TOKYO ELECTRON LIMITED
- Yoshihiro TAKEZAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL WAFER, AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230055999
- Publication date Feb 23, 2023
- SHOWA DENKO K.K.
- Yoshitaka Nishihara
- C30 - CRYSTAL GROWTH
Information Patent Application
INTEGRATED CIRCUIT WITH TOPOLOGICAL SEMIMETAL INTERCONNECTS
- Publication number 20230030586
- Publication date Feb 2, 2023
- Yale University
- HyeukJin Han
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED WET CLEAN FOR EPITAXIAL GROWTH
- Publication number 20230008695
- Publication date Jan 12, 2023
- Applied Materials, Inc.
- Brian K. Kirkpatrick
- B08 - CLEANING
Information Patent Application
SILICON CARBIDE CRYSTAL
- Publication number 20230002929
- Publication date Jan 5, 2023
- GLOBALWAFERS CO., LTD.
- CHING-SHAN LIN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE, AND EPITAXIAL SUBSTRATE
- Publication number 20230005736
- Publication date Jan 5, 2023
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Kohei MIYASHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20220406597
- Publication date Dec 22, 2022
- DENSO CORPORATION
- Takashi OKAWA
- C30 - CRYSTAL GROWTH

Epitaxial-layer growth

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Growth of A-B crystals without crystal lattice curvature

Optimized heteroepitaxial growth of semiconductors

Method of manufacturing nitride semiconductor light-emitting element

Integrated epitaxy and preclean system

Optimized heteroepitaxial growth of semiconductors

Nitride crystal substrate and method for manufacturing the same

Methods for forming large area single crystal diamond substrates wi...

Methods for manufacturing silicon carbide single crystal ingot and...

Group-III nitride substrate

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Diamond crystal

N-CO-doped semiconductor substrate

Method for growing beta-Ga2O3-based single crystal film, and crysta...

Crystalline oxide semiconductor film and semiconductor device

Group 13 element nitride wafer with reduced variation in off-cut angle

Silicon carbide crystal

Method for manufacturing single-crystal semiconductor layer, struct...

High thermal conductivity boron arsenide for thermal management, el...

Large diameter silicon carbide single crystals and apparatus and me...

Group 13 element nitride wafer with reduced variation in off-cut angle

Advanced cooling system using throttled internal cooling passage fl...

Chemical-vapor-deposition silicon carbide bulk having improved etch...

Methods and devices for graphene formation on flexible substrates b...

Optimized heteroepitaxial growth of semiconductors

Method of manufacturing group III nitride crystal by reacting an ox...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Method for growing a metastable crystalline structure which is a 2-...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING A DEVICE COMPRISING A DIAMOND CRYSTAL

METHOD OF FORMING AN EPITAXIAL STACK AND SUBSTRATE PROCESSING APPAR...

GROUP-III NITRIDE SUBSTRATE

GROUP III ELEMENT NITRIDE SUBSTRATE AND PRODUCTION METHOD FOR GROUP...

METHOD FOR PRODUCING COATED SUBSTRATES, COATED SUBSTRATE, AND USE T...

POPULATION OF ALLOY NANOCRYSTALS, POPULATION OF CORE-SHELL NANOCRYS...

COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCT...

OPTICAL DEVICE AND METHOD OF MANUFACTURE

METHOD FOR MANUFACTURING PHOTONIC CRYSTAL AND METHOD FOR MANUFACTUR...

INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED QUANTUM...

EPITAXIAL NITRIDE FERROELECTRONICS

HIGH THERMAL CONDUCTIVITY BORON ARSENIDE FOR THERMAL MANAGEMENT, EL...

Vapor Deposition Apparatus and Techniques Using High Purity Polymer...

LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...

Semiconductor Photoelectrode and Method for Manufacturing Same

METHOD OF FORMING P-TYPE DOPED SILICON-GERMANIUM LAYERS AND SYSTEM...

MULTI-LAYER STACKS OF 2D MATERIALS AND/OR OTHER LAYERS AND RELATED...

METHODS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT AND...

GROUP-III NITRIDE SUBSTRATE

SEMICONDUCTOR SUBSTRATE WITH NITRIDED INTERFACE LAYER

METHOD FOR FORMING SILICON-PHOSPHOROUS MATERIALS

QUALITY EVALUATION METHOD, MANUFACTURING SYSTEM OF SILICON FOR EVAL...

SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVIC...

METHOD FOR FORMING POLYCRYSTALLINE SILICON FILM

SiC EPITAXIAL WAFER, AND METHOD OF MANUFACTURING THE SAME

INTEGRATED CIRCUIT WITH TOPOLOGICAL SEMIMETAL INTERCONNECTS

INTEGRATED WET CLEAN FOR EPITAXIAL GROWTH

SILICON CARBIDE CRYSTAL

METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE, AND EPITAXIAL SUBSTRATE

METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE