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3537029
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Information
Patent Grant
3537029
References
Source
Patent Number
3,537,029
Date Filed
Not available
Date Issued
Tuesday, October 27, 1970
54 years ago
CPC
H01S5/32 - comprising PN junctions
H01L33/00 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof
H01S5/20 - Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis
H01S5/30 - Structure or shape of the active region Materials used for the active region
H01S5/4087 - emitting more than one wavelength
Y10S148/032 - Diffusion length
Y10S148/107 - Melt
Y10S438/956 - Making multiple wavelength emissive device
US Classifications
372 - Coherent light generators
148 - Metal treatment
257 - Active solid-state devices
313 - Electric lamp and discharge devices
438 - Semiconductor device manufacturing: process
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