Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof

H01L33/0004Devices characterised by their operation H01L33/0008having p-n or hi-lo junctions H01L33/0012p-i-n devices H01L33/0016having at least two p-n junctions H01L33/002having heterojunctions or graded gap H01L33/0025comprising only AIIIBV compounds H01L33/0029comprising only AIIBVI compounds H01L33/0033having Schottky barriers H01L33/0037having a MIS barrier layer H01L33/0041characterised by field-effect operation H01L33/0045the devices being superluminescent diodes H01L33/005Processes H01L33/0054for devices with an active region comprising only group IV elements H01L33/0058comprising amorphous semiconductors H01L33/0062for devices with an active region comprising only III-V compounds H01L33/0066with a substrate not being a III-V compound H01L33/007comprising nitride compounds H01L33/0075comprising nitride compounds H01L33/0079wafer bonding or at least partial removal of the growth substrate H01L33/0083for devices with an active region comprising only II-VI compounds H01L33/0087with a substrate not being a II-VI compound H01L33/0091for devices with an active region comprising only IV-VI compounds H01L33/0095Post-treatments of the devices H01L33/02characterised by the semiconductor bodies H01L33/025Physical imperfections H01L33/04with a quantum effect structure or superlattice H01L33/06within the light emitting region H01L33/08with a plurality of light emitting regions H01L33/10with a light reflecting structure H01L33/105with a resonant cavity structure H01L33/12with a stress relaxation structure H01L33/14with a carrier transport control structure H01L33/145with a current-blocking structure H01L33/16with a particular crystal structure or orientation H01L33/18within the light emitting region H01L33/20with a particular shape H01L33/22Roughened surfaces H01L33/24of the light emitting region H01L33/26Materials of the light emitting region H01L33/28containing only elements of group II and group VI of the periodic system H01L33/285characterised by the doping materials H01L33/30containing only elements of group III and group V of the periodic system H01L33/305characterised by the doping materials H01L33/32containing nitrogen H01L33/325characterised by the doping materials H01L33/34containing only elements of group IV of the periodic system H01L33/343characterised by the doping materials H01L33/346containing porous silicon H01L33/36characterised by the electrodes H01L33/38with a particular shape H01L33/382the electrode extending partially in or entirely through the semiconductor body H01L33/385the electrode extending at least partially onto a side surface of the semiconductor body H01L33/387with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer H01L33/40Materials therefor H01L33/405Reflective materials H01L33/42Transparent materials H01L33/44characterised by the coatings H01L33/46Reflective coating H01L33/465with a resonant cavity structure H01L33/48characterised by the semiconductor body packages H01L33/483Containers H01L33/486adapted for surface mounting H01L33/50Wavelength conversion elements H01L33/501characterised by the materials H01L33/502Wavelength conversion materials H01L33/504Elements with two or more wavelength conversion materials H01L33/505characterised by the shape H01L33/507the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body H01L33/508having a non-uniform spatial arrangement or non-uniform concentration H01L33/52Encapsulations H01L33/54having a particular shape H01L33/56Materials H01L33/58Optical field-shaping elements H01L33/60Reflective elements H01L33/62Arrangements for conducting electric current to or from the semiconductor body H01L33/64Heat extraction or cooling elements H01L33/641characterized by the materials H01L33/642characterized by the shape H01L33/644in intimate contact or integrated with parts of the device other than the semiconductor body H01L33/645the elements being electrically controlled H01L33/647the elements conducting electric current to or from the semiconductor body H01L33/648the elements comprising fluids