3653988

Information

• Patent Grant
• 3653988

• References
• Source

• Patent Number

  3,653,988

• Date Filed

  Not available

• Date Issued

  Tuesday, April 4, 1972
  52 years ago

• CPC

  • H01L27/0716 - in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
  • H01L21/74 - Making of localized buried regions
  • H01L21/761 - PN junctions
  • H01L21/765 - by field effect
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • Y10S148/036 - Diffusion, nonselective
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/085 - Isolated-integrated
  • Y10S438/919 - Compensation doping
  • Y10S438/921 - Nonselective diffusion

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices