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3808674
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Information
Patent Grant
3808674
References
Source
Patent Number
3,808,674
Date Filed
Not available
Date Issued
Tuesday, May 7, 1974
50 years ago
CPC
H01G7/025 - having an inorganic dielectric
Y10S148/097 - Lattice strain and defects
Y10S148/115 - Orientation
Y10S148/15 - Silicon on sapphire SOS
Y10T29/49863 - with prestressing of part
US Classifications
117 - Single-crystal, oriented-crystal, and epitaxy growth processes
029 - Metal working
148 - Metal treatment
257 - Active solid-state devices
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