3826700

Information

• Patent Grant
• 3826700

• References
• Source

• Patent Number

  3,826,700

• Date Filed

  Not available

• Date Issued

  Tuesday, July 30, 1974
  50 years ago

• CPC

  • C30B33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
  • B23K28/003 - Welding in a furnace
  • Y10T428/12528 - Semiconductor component
  • Y10T428/12674 - Ge- or Si-base component
  • Y10T428/12681 - Ga-, In-, Tl- or Group VA metal-base component

• US Classifications

  • 428 - Stock material or miscellaneous articles
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 228 - Metal fusion bonding
  • 252 - Compositions
  • 257 - Active solid-state devices
  • 438 - Semiconductor device manufacturing: process