After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,159,781
- Issue date Dec 3, 2024
- Soitec
- Hugo Biard
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing wafers with modification lines of defined orie...
- Patent number 12,159,805
- Issue date Dec 3, 2024
- Siltectra GmbH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Silicon carbide composite wafer and manufacturing method thereof
- Patent number 12,159,855
- Issue date Dec 3, 2024
- HONG CHUANG APPLIED TECHNOLOGY CO., LTD
- Yan-Kai Zeng
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for determining suitability of silicon substrates for epitaxy
- Patent number 12,152,314
- Issue date Nov 26, 2024
- GlobalWafers Co., Ltd.
- Shan-Hui Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of nonlinear optical crystals
- Patent number 12,152,316
- Issue date Nov 26, 2024
- KLA Corporation
- Yung-Ho Alex Chuang
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC wafer and manufacturing method for SiC wafer
- Patent number 12,139,813
- Issue date Nov 12, 2024
- Toyota Tsusho Corporation
- Masatake Nagaya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Joined body, laser oscillator, laser amplifier, and joined body man...
- Patent number 12,142,888
- Issue date Nov 12, 2024
- National Institute for Materials Science
- Hiroaki Furuse
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and manufacturing method of the same
- Patent number 12,142,645
- Issue date Nov 12, 2024
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of single-crystal silicon substrate
- Patent number 12,129,570
- Issue date Oct 29, 2024
- Disco Corporation
- Hayato Iga
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride single crystal substrate and method for productio...
- Patent number 12,116,697
- Issue date Oct 15, 2024
- Tokuyama Corporation
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Pseudo-substrate with improved efficiency of usage of single crysta...
- Patent number 12,112,976
- Issue date Oct 8, 2024
- Soitec
- Fabrice Letertre
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Method of fabricating nanostructures using macro pre-patterns
- Patent number 12,103,844
- Issue date Oct 1, 2024
- Korea Advanced Institute of Science and Technology
- Hee-Tae Jung
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Ga2O3-based single crystal substrate
- Patent number 12,104,276
- Issue date Oct 1, 2024
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electrostatic chucking process
- Patent number 12,100,609
- Issue date Sep 24, 2024
- Applied Materials, Inc.
- Sarah Michelle Bobek
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of semi-insulating single-crystal silicon carb...
- Patent number 12,098,477
- Issue date Sep 24, 2024
- TAISIC MATERIALS CORP.
- Dai-Liang Ma
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Apparatus for preparing a single crystal comprising a volatilizatio...
- Patent number 12,098,478
- Issue date Sep 24, 2024
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Shujie Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC substrate via an etching step, growth st...
- Patent number 12,098,476
- Issue date Sep 24, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate, laminated structure, and method fo...
- Patent number 12,091,774
- Issue date Sep 17, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing large EMI shielded GaAs and GaP infrared windows
- Patent number 12,084,791
- Issue date Sep 10, 2024
- BAE Systems Information and Electronic Systems Integration Inc.
- Peter G. Schunemann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for manufacturing silicon carbide single crystal ingot and...
- Patent number 12,071,709
- Issue date Aug 27, 2024
- Denso Corporation
- Isaho Kamata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a SiC substrate by simultaneously forming...
- Patent number 12,065,758
- Issue date Aug 20, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Indium phosphide substrate
- Patent number 12,065,759
- Issue date Aug 20, 2024
- JX Metals Corporation
- Shunsuke Oka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing substance
- Patent number 12,059,664
- Issue date Aug 13, 2024
- INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION NATIONAL INSTITUTES OF NATURA...
- Takunori Taira
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Low etch pit density, low slip line density, and low strain indium...
- Patent number 12,054,851
- Issue date Aug 6, 2024
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large diameter silicon carbide wafers
- Patent number 12,054,850
- Issue date Aug 6, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a mechanical vibrator comprising epitaxially g...
- Patent number 12,049,711
- Issue date Jul 30, 2024
- Nippon Telegraph and Telephone Corporation
- Koji Onomitsu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group-III nitride substrate
- Patent number 12,049,710
- Issue date Jul 30, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,046,469
- Issue date Jul 23, 2024
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for evaluating defect in monoclinic gallium oxide
- Patent number 12,038,388
- Issue date Jul 16, 2024
- The Industry & Academic Cooperation in Chungnam National University (IAC)
- Soon-Ku Hong
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Methods of Growing Co-Doped Cerium Calcium Lutetium-Yttrium Oxyorth...
- Publication number 20240417885
- Publication date Dec 19, 2024
- Pacific Innovations Pte. Ltd.
- Faouzi Zerrouk
- C30 - CRYSTAL GROWTH
Information Patent Application
CVD SINGLE CRYSTAL DIAMOND
- Publication number 20240417884
- Publication date Dec 19, 2024
- ELEMENT SIX TECHNOLOGIES LIMITED
- Benjamin Simon TRUSCOTT
- C30 - CRYSTAL GROWTH
Information Patent Application
SUPERLATTICE STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240410082
- Publication date Dec 12, 2024
- Nippon Telegraph and Telephone Corporation
- Ai Ikeda
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20240401229
- Publication date Dec 5, 2024
- Rohm Co., Ltd.
- Keiju SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYS...
- Publication number 20240392476
- Publication date Nov 28, 2024
- SOITEC
- Ionut Radu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURE OF A WATCH CRYSTAL
- Publication number 20240392473
- Publication date Nov 28, 2024
- Corey Albert Morrow
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing a Bulk SiC Single Crystal with Improved Qualit...
- Publication number 20240392471
- Publication date Nov 28, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20240384436
- Publication date Nov 21, 2024
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Application
LASER BEAM ASTIGMATISM EVALUATING METHOD
- Publication number 20240385431
- Publication date Nov 21, 2024
- Disco Corporation
- Atsushi MAEDA
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
METHOD FOR SCALABLE FABRICATION OF ULTRAFLAT POLYCRYSTALLINE DIAMON...
- Publication number 20240384433
- Publication date Nov 21, 2024
- The University of Hong Kong
- Zhiqin CHU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A DEVICE COMPRISING A DIAMOND CRYSTAL
- Publication number 20240384434
- Publication date Nov 21, 2024
- THALES
- Thierry DEBUISSCHERT
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL MATERIAL AND PREPARATION METHOD THEREOF
- Publication number 20240376638
- Publication date Nov 14, 2024
- Huawei Technologies Co., Ltd
- Ruoyu XU
- C01 - INORGANIC CHEMISTRY
Information Patent Application
PRODUCTION METHOD FOR SILICON MONOCRYSTAL AND PRODUCTION METHOD FOR...
- Publication number 20240368802
- Publication date Nov 7, 2024
- SUMCO CORPORATION
- Wataru SUGIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE MATERIAL
- Publication number 20240359991
- Publication date Oct 31, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SYSTEM AND METHOD FOR SELECTIVE ETCHING OF AMORPHOUS SILICON OVER E...
- Publication number 20240363374
- Publication date Oct 31, 2024
- Applied Materials, Inc.
- Mukhles SOWWAN
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GROUP-III NITRIDE SUBSTRATE
- Publication number 20240352623
- Publication date Oct 24, 2024
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
TEXTURE STRUCTURE OF SOLAR CELL AND PREPARATION METHOD THEREFOR
- Publication number 20240355942
- Publication date Oct 24, 2024
- TRINA SOLAR CO., LTD.
- Hong CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE AREA DEVICE-QUALITY DIAMOND SUBSTRATES (LADDIS)
- Publication number 20240344236
- Publication date Oct 17, 2024
- Chih Shiue YAN
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS
- Publication number 20240344239
- Publication date Oct 17, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MEASURING ETCHING AMOUNT, AND MEASUREMENT SYSTEM THEREFOR
- Publication number 20240328776
- Publication date Oct 3, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDU...
- Publication number 20240328032
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE
- Publication number 20240332021
- Publication date Oct 3, 2024
- SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
- Fen GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...
- Publication number 20240332366
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE...
- Publication number 20240318352
- Publication date Sep 26, 2024
- SiCrystal GmbH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Application
SELECTIVE DEPOSITION OF DIAMOND
- Publication number 20240318349
- Publication date Sep 26, 2024
- M7D Corporation
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
DEFECT REDUCTION IN DIAMOND
- Publication number 20240318350
- Publication date Sep 26, 2024
- M7D Corporation
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
Thermal Neutron Transmutation Doped Gallium Oxide Semiconductor
- Publication number 20240312793
- Publication date Sep 19, 2024
- Marko J. Tadjer
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL DIAMOND COMPONENT AND METHOD FOR PRODUCING
- Publication number 20240309554
- Publication date Sep 19, 2024
- Element Six Technologies Limited
- Matthew Lee MARKHAM
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GALLIUM NITRIDE SINGLE-CRYSTAL SUBSTRATE AN...
- Publication number 20240300064
- Publication date Sep 12, 2024
- KYOCERA CORPORATION
- Yuri OSUMI
- B24 - GRINDING POLISHING

After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Industry

Parent Industries

Current Industry

Sub Industries

Patents Grantslast 30 patents

Method for manufacturing a composite structure comprising a thin la...

Method for producing wafers with modification lines of defined orie...

Silicon carbide composite wafer and manufacturing method thereof

Methods for determining suitability of silicon substrates for epitaxy

Passivation of nonlinear optical crystals

SiC wafer and manufacturing method for SiC wafer

Joined body, laser oscillator, laser amplifier, and joined body man...

Silicon wafer and manufacturing method of the same

Manufacturing method of single-crystal silicon substrate

Group III nitride single crystal substrate and method for productio...

Pseudo-substrate with improved efficiency of usage of single crysta...

Silicon carbide substrate

Method of fabricating nanostructures using macro pre-patterns

Ga2O3-based single crystal substrate

Electrostatic chucking process

Manufacturing method of semi-insulating single-crystal silicon carb...

Apparatus for preparing a single crystal comprising a volatilizatio...

Method for producing a SiC substrate via an etching step, growth st...

Nitride semiconductor substrate, laminated structure, and method fo...

Method of producing large EMI shielded GaAs and GaP infrared windows

Methods for manufacturing silicon carbide single crystal ingot and...

Method for manufacturing a SiC substrate by simultaneously forming...

Indium phosphide substrate

Method of producing substance

Low etch pit density, low slip line density, and low strain indium...

Large diameter silicon carbide wafers

Method for producing a mechanical vibrator comprising epitaxially g...

Group-III nitride substrate

Manufacturing method for semiconductor silicon wafer

Method for evaluating defect in monoclinic gallium oxide

Patents Applicationslast 30 patents

Methods of Growing Co-Doped Cerium Calcium Lutetium-Yttrium Oxyorth...

CVD SINGLE CRYSTAL DIAMOND

SUPERLATTICE STRUCTURE AND MANUFACTURING METHOD THEREFOR

COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF

METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYS...

METHOD OF MANUFACTURE OF A WATCH CRYSTAL

Method for Producing a Bulk SiC Single Crystal with Improved Qualit...

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...

LASER BEAM ASTIGMATISM EVALUATING METHOD

METHOD FOR SCALABLE FABRICATION OF ULTRAFLAT POLYCRYSTALLINE DIAMON...

METHOD FOR MANUFACTURING A DEVICE COMPRISING A DIAMOND CRYSTAL

CRYSTAL MATERIAL AND PREPARATION METHOD THEREOF

PRODUCTION METHOD FOR SILICON MONOCRYSTAL AND PRODUCTION METHOD FOR...

SILICON CARBIDE MATERIAL

SYSTEM AND METHOD FOR SELECTIVE ETCHING OF AMORPHOUS SILICON OVER E...

GROUP-III NITRIDE SUBSTRATE

TEXTURE STRUCTURE OF SOLAR CELL AND PREPARATION METHOD THEREFOR

LARGE DIAMETER SILICON CARBIDE WAFERS

LARGE AREA DEVICE-QUALITY DIAMOND SUBSTRATES (LADDIS)

REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS

METHOD FOR MEASURING ETCHING AMOUNT, AND MEASUREMENT SYSTEM THEREFOR

SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDU...

METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE

POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...

METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE...

SELECTIVE DEPOSITION OF DIAMOND

DEFECT REDUCTION IN DIAMOND

Thermal Neutron Transmutation Doped Gallium Oxide Semiconductor

SINGLE CRYSTAL DIAMOND COMPONENT AND METHOD FOR PRODUCING

METHOD OF MANUFACTURING GALLIUM NITRIDE SINGLE-CRYSTAL SUBSTRATE AN...