3831154

Information

• Patent Grant
• 3831154

• References
• Source

• Patent Number

  3,831,154

• Date Filed

  Not available

• Date Issued

  Tuesday, August 20, 1974
  50 years ago

• CPC

  • G11C11/22 - using ferroelectric elements
  • G11C11/39 - using thyristors or the avalanche or negative resistance type
  • G11C16/0466 - comprising cells with charge storage in an insulating layer
  • H01C7/046 - Iron oxides or ferrites
  • H01F10/06 - characterised by the coupling or physical contact with connecting or interacting conductors
  • H01L27/2472 - the switching components having a common active material layer
  • H01L45/04 - Bistable or multistable switching devices
  • H01L45/147 - Complex metal oxides
  • H01L45/1641 - Modification of the switching material
  • G11C2211/5614 - Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements

• US Classifications

  • 365 - Static information storage and retrieval
  • 252 - Compositions
  • 257 - Active solid-state devices