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3831154
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Information
Patent Grant
3831154
References
Source
Patent Number
3,831,154
Date Filed
Not available
Date Issued
Tuesday, August 20, 1974
50 years ago
CPC
G11C11/22 - using ferroelectric elements
G11C11/39 - using thyristors or the avalanche or negative resistance type
G11C16/0466 - comprising cells with charge storage in an insulating layer
H01C7/046 - Iron oxides or ferrites
H01F10/06 - characterised by the coupling or physical contact with connecting or interacting conductors
H01L27/2472 - the switching components having a common active material layer
H01L45/04 - Bistable or multistable switching devices
H01L45/147 - Complex metal oxides
H01L45/1641 - Modification of the switching material
G11C2211/5614 - Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements
US Classifications
365 - Static information storage and retrieval
252 - Compositions
257 - Active solid-state devices
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