3858232

Information

• Patent Grant
• 3858232

• References
• Source

• Patent Number

  3,858,232

• Date Filed

  Not available

• Date Issued

  Tuesday, December 31, 1974
  50 years ago

• CPC

  • H01L29/76883 - Three-Phase CCD
  • G11C19/28 - using semiconductor elements
  • G11C19/282 - with charge storage in a depletion layer
  • G11C19/287 - Organisation of a multiplicity of shift registers
  • G11C27/04 - Shift registers
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • H01L27/0617 - comprising components of the field-effect type
  • H01L27/14831 - Area CCD imagers
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L29/1062 - of charge coupled devices
  • H01L29/42396 - for charge coupled devices
  • H01L29/76825 - Structures for regeneration, refreshing, leakage compensation or the like

• US Classifications

  • 257 - Active solid-state devices
  • 327 - Miscellaneous active electrical nonlinear devices, circuits, and systems
  • 365 - Static information storage and retrieval