3921199

Information

• Patent Grant
• 3921199

• References
• Source

• Patent Number

  3,921,199

• Date Filed

  Not available

• Date Issued

  Tuesday, November 18, 1975
  50 years ago

• CPC

  • H01L29/0619 - with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region
  • H01L21/26513 - of electrically active species
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L29/0615 - by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions
  • Y10S148/018 - Compensation doping
  • Y10S148/049 - Equivalence and options
  • Y10S148/085 - Isolated-integrated
  • Y10S148/145 - Shaped junctions

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment
  • 438 - Semiconductor device manufacturing: process